SOT223 NPN SILICON PLANAR
MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 4 - FEBRUARY 1998
FZT1051A
FEATURES
*V
CEO
= 40V
C
* 5 Amp Continuous Current
* 20 Amp Pulse Current
* Low Saturation Voltage
* High Gain
* Extremely Low Equivalent On-resistance; R
= 50mΩ at 5A
CE(sat)
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature
Range
=25°C † P
amb
CBO
CEO
EBO
CM
C
B
tot
T
j:Tstg
150 V
40 V
5V
10 A
5 A
500 mA
2.5 W
-55 to +150 °C
E
C
† The power which can be dissipated assuming the device is mounted in typical manner on a PCB
with copper equal to 2 inches x 2 inches.
FZT1051A
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
150 190 V
150 190 V
I
=100µA
C
=100µA *
I
C
40 60 V IC=10mA
150 190 V
59 V
I
=100µA, VEB=1V
C
I
=100µA
E
0.3 10 nA VCB=120V
0.3 10 nA VEB=4V
0.3 10 nA V
17
85
140
250
25
120
180
340
mV
mV
mV
mV
=120V
CES
IC=0.2A, IB=10mA*
I
=1A, IB=10mA*
C
I
=2A, IB= 20mA*
C
I
=5A, IB=100mA*
C
980 1100 mV IC=5A, IB=100mA*
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
Turn-on Time t
Turn-off Time t
V
h
T
on
off
BE(on)
FE
obo
290
270
130
40
915 1000 mV IC=5A, VCE=2V*
440
450
1200
220
55
155 MHz IC=50mA, VCE=10V
27 40 pF VCB=10V, f=1MHz
220 ns IC=3A, IB=30mA, VCC=10V
540 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
IC=10mA, VCE=2V*
I
=1A, VCE=2V*
C
I
=5A, VCE=2V*
C
I
=10A, VCE=2V*
C
f=100MHz
TYPICAL CHARACTERISTICS
FZT1051A
1.0
+25°C
0.8
0.6
0.4
IC/IB=50
IC/IB=100
IC/IB=200
VCE(sat) - (V)
0.2
0
1m 100
10m 100m 1 10
IC- Collector Current (A)
VCE(sat) v IC
750
VCE=2V
500
250
hFE - Typical Gain
0
10m 100m 1 10
1m 100
IC- Collector Current (A)
hFEv I
C
+100°C
+25°C
-55°C
1.0
IC/IB=100
0.8
0.6
0.4
-55°C
+25°C
+100°C
+150°C
VCE(sat) - (V)
0.2
0
10m 100m 1 10
1m 100
IC - Collector Current (A)
VCE(sat) v IC
1.2
IC/IB=100
0.9
0.6
VBE(sat) - (V)
0.3
0
10m 100m 1 10
IC - Collector Current (A)
BE(sat)
V
v I
C
-55°C
+25°C
+100°C
+150°C
1001m
1.6
VCE=2V
1.2
0.8
VBE(on) - (V)
0.4
0
10m 100m 1 10
1m 100
IC - Collector Current (A)
BE(on)
V
v I
C
-55°C
+25°C
+100°C
+150°C
100
10
DC
1s
100ms
1
10ms
1ms
IC - Collector Current (A)
100m
100us
100m 100
110
VCE - Collector Emitter Voltage (V)
Safe Operating Area
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