Datasheet FW231 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Load Switching Applications

Ordering number:ENN6071A

FW231

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

58

Features

· Low ON resistance.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

noitapissiDlatoTP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D
T

Package Dimensions

unit:mm

2129

[FW231]

0.3

4.4

14

5.0

1.8max

1.5

1.27

0.595

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %125A

PD

Mounted on a ceramic board (1000mm2×0.8mm) 1unit
Mounted on a ceramic board (1000mm2×0.8mm)

0.43

0.1

6.0

1 : Source1
2 : Gate1

0.2

3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8

02V
01±V
9A

7.1W

0.2W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SSD
SSG

)ffo(SG

1IDV,A9=

)no(SD

2IDV,A2=

)no(SD

I

V,Am1=

SSD)RB(

D

V

SD

V

SG

V

SD

0=02V

SG

V,V02=

0=1Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Am1=4.03.1V

D

A9=6142S

D

V4=5102mΩ

SG

V5.2=0272mΩ

SG

nimpytxam

Marking : W231 Continued on next page.

52200TS (KOTO) TA-2076 No.6071-1/4

sgnitaR

tinU

FW231

A12026

D1 D1 D2 D2

5678

S1

1234

G1 S2 G2

Continued from preceding page.

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ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

I

V,A9=

S

Switching Time Test Circuit Electrical Connection

zHM1=f,V01=0591Fp
zHM1=f,V01=055Fp
zHM1=f,V01=073Fp

tiucriCtseTdeificepseeS42sn
tiucriCtseTdeificepseeS044sn
tiucriCtseTdeificepseeS002sn
tiucriCtseTdeificepseeS003sn

I,V01=

SG
SG
SG

0=28.02.1V

SG

A9=06Cn

D

I,V01=

A9=8.2Cn

D

I,V01=

A9=01Cn

D

sgnitaR

nimpytxam

tinU

|

D

S

V

-

VDD=10V

ID=9A

RL=1.1Ω

V

FW231

DS

I

D

25°C

-

Ta=

OUT

A11946

75°C

1.5V

VGS=1.0V

25°C

ID-

V

18

16

14

–A

12

D

10

8

6

Drain Current, I

4

2

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

GS

25

Gate-to-Source Voltage, VGS–V

60

50

–mΩ

40

DS(on)

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

I

=9A

D

I

=2A

D

20 4 6 8 10 12

R

DS(on)

-

V

GS

°C

75°C

Ta=

25°C

-

Ta=25°C

V

IN

4V
0V

PW=10µs
D.C.≤1%

P.G

18

3.5V

16

14

4.0V

–A

12

D

10

8

6

Drain Current, I

4

2

0

0 0.5 1.0 1.5 2.0 2.5 3.0

3.0V

2.5V

2.0V

V

IN

G

50Ω

ID-

Drain-to-Source Voltage, VDS–V

y

|

5

VDS=10V

3

fs|–S

2

y

10

7
5

3

2

fs

Forward Transfer Admittance, |

1.0
23 57 23 2357

0.1 10

1.0

Drain Current, ID– A Gate-to-Source Voltage, VGS–V

No.6071-2/4

R

40

35

30

–mΩ

25

DS(on)

20

15

10

5

Static Drain-to-Source

On-State Resistance, R

0

-50 -25 0 25 50 75 100 125 150

DS(on)

I

D

I

=2A,V

=9A,V

D

-

Ta

=2.5V

GS

=4V

GS

Ambient Temperature, Ta – ˚C

10000

7
5

3
2

1000

7
5

Ciss, Coss, Crss – pF

3
2

100

0246 810 1412 16 18 20

Ciss, Coss, Crss-V

DS

Drain-to-Source Voltage, VDS– V Total Gate Charge, Qg – nC

1000

100

Switching Time, SW Time – ns

VDD=10V

7

VGS=4V

5

3
2

7
5

3
2

10

7

0.1

SW Time

t

d(off)

t

f

t

r

t

d(on)

23 2 2357

-

I

D

1.0

Drain Current, ID–A

-

P

2.4

D

Ta

f=1MHz

57

FW231

Ciss

Coss

Crss

10

I

-

V

10

–A

F

1.0

0.1

Forward Current, I

0.01

3

VGS=0

2

7
5

3
2

7
5

3
2

7
5

3
2

0.30.2 0.4 0.5 0.6 0.7 0.8 0.9 1.0

F

Ta=75°C

SD

25°C

Diode Forward Voltage, VSD–V

-

V

10

9

V

8

GS –

7

6

5

4

3

2

Gate-to-Source Voltage, V

1

0

100

7
5

3
2

10

7
5

–A

3

D

2

,I

1.0
7
5

3
2

Drain Current

0.1
7
5

3
2

0.01

100 2030405060

IDP=52A

Operation in this area
is limited by RDS(on).

Ta=25°C
Single pulse
1 unit

Mounted on a ceramic board (1000mm2×0.8mm)

23 57 23 57 23 2357

GS

Qg

A S O

ID=9A

DC operation

Drain-to-Source Voltage, VDS–V

°C

25

-

10µs

1ms

10ms

100ms

100.1 1.00.01

2.0

–W

D

1.7

1.6

Total Dissipation

1.2

1 unit

0.8

0.4

Allowable Power Dissipation, P

Mounted on a ceramic board (1000mm

0

0 20 40 60 80 100 120 140 160

2

×0.8mm)

Ambient Temperature, Ta – ˚C

No.6071-3/4

FW231

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of May, 2000. Specifications and information herein are subject to
change without notice.

PS No.6071-4/4