Page 1
FW113
Ordering number :EN5847
S/W Load Applications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
P-Channel Silicon MOS FET
Features
· 4V drive.
· Low ON resistance.
Package Dimensions
unit:mm
2129
[FW113]
58
0.3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBS-DV
tnerruCniarDegatloVetaGoreZI
tnerruCegakaeLecruoS-ot-etaG
tnerruCffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiC
ecnaticapaCtuptuO
ecnaticapaCrefsnarTesreveR
emiTyaleDNO-nruT
emiTesiR
emiTyaleDFFO-nruT
emiTllaF
egrahCetaGlatoT
egrahCecruoS-ot-etaG
egrahC)"relliM"(niarD-ot-etaG
egatloVdrawroFedoiD
D
D
T
I
R
R
t
t
r
t
t
f
V
4.4
1:Source1
6.0
2:Gate1
3:Source2
14
5.0
1.8max
1.5
0.2
4:Gate2
5:Drain2
6:Drain2
7:Drain1
8:Drain1
1.27
0.595
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %123–A
PD
Mounted on ceramic board (1000mm2×0.8mm) 1unit
Mounted on ceramic board (1000mm
I
SSD)RB(
D
V
SSD
V
SSG
V
)ffo(SG
1IDV,A5–=
)no(SD
2IDV,A2–=
)no(SD
V
ssoCV
ssrCV
)no(d
)ffo(d
gQVSDV,V01–=
sgQVSDV,V01–=
dgQVSDV,V01–=
I
DS
S
V,Am1–=
0=03–V
SG
V,V03–=
SD
SG
SD
SD
SD
SD
V,A5–=
0=001–Aµ
SG
V,V61±=
0=01±Aµ
SD
I,V01–=
Am1–=0.1–5.2–V
D
A5–=58S
D
V01–=2435mΩ
SG
V4–=58021mΩ
SG
zHM1=f,V01–=028
zHM1=f,V01–=074Fp
zHM1=f,V01–=032Fp
tiucriCtseTdeificepseeS51sn
tiucriCtseTdeificepseeS051sn
tiucriCtseTdeificepseeS58sn
tiucriCtseTdeificepseeS09sn
I,V01–=
SG
SG
SG
0=0.1–5.1–V
SG
D
I,V01–=
D
I,V01–=
D
0.43
2
×0.8mm)
A5–=52Cn
A5–=5Cn
A5–=7Cn
0.1
SANYO:SOP8
sgnitaR
nimpytxam
03–V
02±V
5–A
7.1W
0.2W
˚C
˚C
tinU
Fp
52698TS (KOTO) TA-1215 No.5847-1/3
Page 2
Switching Time Test Circuit
=
V
–15V
DD
=
I
–5A
D
=
R
3Ω
L
D
–10V
V
0V
PW=10µs
D.C.≤1%
IN
V
IN
FW113
V
OUT
P.G
A
-
D
Drain Current, I
|-S
fs
y
10
1.0
-6
-5
-4
-3
-2
-1
0
0-0.1
5
VDS=–10V
3
2
7
5
3
2
7
G
50Ω
–8.0V
–10.0V
-0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 0 -0.5
Drain-to-Source Voltage, V
S
–6.0V
ID-
–4.0V
y
|
FW113
fs
V
–3.5V
|-I
DS
DS
D
Ta=–25˚C
75˚C
-10
-9
-8
A
-7
-
-6
D
-5
-4
–3.0V
=–
V
2.5V
GS
-3
Drain Current, I
-2
-1
0
- V Gate-to-Source Voltage, VDS-V
140
120
–mΩ
)
25˚C
100
on
DS (
80
60
40
VDS=–10V
=–2A
ID-
V
GS
75˚C
25˚C
Ta=–25˚C
-1.0 -1.5 -2.0 -2.5 -3.0 -4.0-3.5
R
(on)
-
DS
=–5A
D
D
I
I
V
GS
Tc=25˚C
Forwaard Transfer Addmittance,|
0.1
7
-0.01
2233557
-0.1
2357
Drain Current, ID-A
R
140
120
–mΩ
)
100
on
DS (
80
60
40
20
Static Drain-to-Source
ON-State Resistance, R
0
-60 -40
-20 0 20 40 60 80 100 120 140
DS
Case Temperature, Tc - ˚C
(on)
-1.0
2357
-
Tc
=–2A
I
D
=–5A,V
I
D
-10
,V
2357
=–4V
GS
=–10V
GS
-100
20
Static Drain-to-Source
ON-State Resistance, R
0
0-2
-4 -6 -8 -10 -12 -14 -16 -18 -20
Gate-to-Source Voltage,V
-10
VGS=0
7
5
3
2
-A
-1.0
F
7
5
3
2
-0.1
7
Forward Current, I
5
3
2
-0.01
0 -0.2 -0.4 -0.6 -0.8 -1.4-1.2-1.0
IF-
25˚C
Ta=75˚C
Diode Forward Voltage, VSD–V
25˚C
–
- V
GS
V
SD
No.5847-2/3
Page 3
FW113
10000
7
5
3
2
1000
7
5
3
2
100
Ciss,Coss,Crss - pF
7
5
3
2
10
0 -5 -10 -15 -20 -25 -30
Ciss,Coss,Crss
-
V
DS
Drain-to-Source Voltage,VDS– V Total Gate Charge, Qg – nC
Switching Time, SW Time – ns
1000
100
SW Time
7
5
3
2
7
5
3
2
10
-0.1
23 577
-
-1.0
I
D
t
t
d(off)
t
d(on)
22357
Drain Current, ID–A
P
(FET2) – W
D
Allowable Dissipation, P
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 0.2
(FET2)
D
Mounted on ceramic board (1000mm
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20
-
P
(FET1)
D
2
×
0.8mm)
Allowable Dissipation, PD(FET1) – W
f=1MHz
Ciss
Coss
Crss
VDD=–15V
V
=–10V
GS
r
t
f
-10
-10
VDS=–10V
I
=–5A
D
-9
-8
–V
GS
-7
-6
-5
-4
-3
-2
Gate-to-Source Voltage, V
-1
0
0
-100
7
5
IDP=–32A
3
2
-10
7
5
-A
3
D
2
,I
-1.0
7
5
3
2
Drain Current
-0.1
Ta=25˚C
1pulse
1unit
2
Mounted on ceramic board (1000mm
-0.01
-0.01 -0.1
510152025
Operation in this area is
limited by R
2335577
DS
2357 23 5 2357
Drain -to-Source Voltage, V
2.5
W
2.0
–
D
1.7
1.5
1.0
0.5
Allowable Dissipation, P
Mounted on ceramic board (1000mm
0
40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C
VGS-
A S O
ID=–5A
(on).
-1.0 -10
PD-
Total Dissipation
1 unit
Qg
100ms
DC operation
2
0.8mm)
×
-V
DS
Ta
2
0.8mm)
×
10ms
100
1ms
µs
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.5847-3/3
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