Datasheet FTS2011 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Load Switching Applications

Ordering number:ENN6355

FTS2011

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

0.425

Features

· Low ON resistance.

· 2.5V drive.

· Mounting height 1.1mm.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : S2011 Continued on next page.

SSD
SSG

D

R
R

WP ≤ elcycytud,sµ01 ≤ %123A

PD

Mounted on a ceramic board (1000mm2×0.8mm)

D

I

SSD)RB(

D

V

SSD
SSG

)ffo(SG

1IDV,A8=

)no(SD

2IDV,A2=

)no(SD

SD

V

SG

V

SD

SD
SD
SD

Package Dimensions

unit:mm

2147A

4.5 0.95

(0.95)

6.4

[FTS2011]

0.5

1 : Drain
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Source
7 : Source

0.125

8 : Drain
SANYO : TSSOP8

sgnitaR

nimpytxam

02V
01±V
8A

3.1W

˚C
˚C

0.65

V,Am1=

0=02V

SG

V,V02=

0=1Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Am1=4.03.1V

D

A8=5112S

D

V4=3171mΩ

SG

V5.2=8162mΩ

SG

zHM1=f,V01=0591Fp
zHM1=f,V01=055Fp
zHM1=f,V01=073Fp

3.0

85

14

0.25

tinU

60100TS (KOTO) TA-2115 No.6355-1/4

FTS2011

Continued from preceding page.

retemaraPlobmySsnoitidnoC

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

SG
SG

I

DS

S

SG

V,A8=

0=8.02.1V

SG

Switching Time Test Circuit

VDD=10V

V

IN
4V
0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=8A
RL=1.25Ω

V

OUT

tiucriCtseTdeificepseeS42sn
tiucriCtseTdeificepseeS004sn
tiucriCtseTdeificepseeS012sn
tiucriCtseTdeificepseeS092sn

I,V01=

D

I,V01=

D

I,V01=

D

sgnitaR

nimpytxam

A8=06Cn
A8=6.2Cn
A8=01Cn

tinU

P.G

20

18

16
14

–A

12

D

10

8

6

Drain Current, I

4
2
0

0 0.5 1.0 1.5 2.0 2.5 3.0

30

4.0V

2.5V

50Ω

I

-- V

D

DS

2.0V

3.0V

3.5V

Drain-to-Source Voltage, VDS–V

RDS(on) -- V

FTS2011

S

VDS=10V

VGS=1.0V

GS

Ta=25°C

1.5V

IT00436

Ta=25°C

15

VDS=10V

12

D

GS

I

-- V

–A

D

9

6

Drain Current, I

3

Ta=75°C

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.81.6

30

Gate-to-Source Voltage, VGS–V

RDS(on) -- Ta

--25

25°C

°C

IT00437

25

–mΩ

20

DS(on)

15

10

5

Static Drain-to-Source

On-State Resistance, R

0

02 10846

8A

ID=2A

Gate-to-Source Voltage, V

GS

–V

IT00438

25

–mΩ

20

DS(on)

15

10

5

Static Drain-to-Source

On-State Resistance, R

0

--50 --25 0 25 50 75 100 125 150

=2A, V

I

D

=8A, V

I

D

Ambient Temperature, Ta – ˚C

GS

GS

=2.5V

=4.0V

IT00439

No.6355-2/4

100

7
5

fs|–S

y

3
2

yfs -- I

D

VDS=10V

°C

10

7
5

3
2

Ta= --25

75°C

25°C

Forward Transfer Admittance, |

1.0
2

0.1 101.0

10000

7
5

3
2

1000

7
5

3
2

100

Ciss, Coss, Crss – pF

7
5

3
2

10

357 2357

Drain Current, ID–A

Ciss, Coss, Crss -- V

Ciss

Coss

Crss

02468101214161820

23 57

DS

f=1MHz

Drain-to-Source Voltage, VDS–V

1000

7
5

3
2

100

7
5

3
2

10

7
5

Switching Time, SW Time – ns

3
2

0.1

0.1 1.0 10

2.0

23 57 23 57

SW Time -- I

t

f

Drain Current, ID–A

P

D

td(off)

t

r

-- Ta

D

VDD=10V
VGS=4V

td(on)

FTS2011

100

IT00440

IT00442

IT00444

I

-- V

F

100

7
5

3
2

10

7

–A

5

F

3
2

1.0
7

5
3

2

Forward Current, I

0.1
7

5
3

2

0.01

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

°C

Ta=75

25°C

SD

°C

--25

Diode Forward Voltage, VSD–V

10

VDS=10V

9

ID=8V

V

8

–

GS

7

6

5

4

3

2

Gate-to-Source Voltage, V

1
0

0 5 10 15 20 25 30 35 40 45 50 55 60

VGS -- Qg

Total Gate Charge, Qg – nC

100

7
5

IDP=32A

3
2

ID=8A

10

7
5

–A

3

D

2

,I

1.0

7
5

Operation in this

3

area is limited by RDS(on)

2

Drain Current

0.1

7
5

Ta=25°C

3

Single pulse

2

Mounted on a ceramic board (1000mm2×0.8mm)

0.01
23 57

0.01 0.1

Drain-to-Source Voltage, VDS–V

A S O

DC operation

23 57

<10µs

1ms

10ms

100ms

23 57 23 57

1.0

10 100

VGS=0

IT00441

IT00443

100µs

IT00445

–W

D

1.5

1.3

1.0

0.5

Mounted on a ceramic board (1000mm

2

×0.8mm)

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta – ˚C

IT00446

No.6355-3/4

FTS2011

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of June, 2000. Specifications and information herein are subject to
change without notice.

PS No.6355-4/4