Page 1
On-State Current
4 Amp
FT04...I
LOGIC LEVEL TRIAC
This series of TRIACs uses a high
performance PNPN technology.
These parts are intended for general
purpose applications where logic
compatible gate sensitivity is required, like
touch dimmers, fan, electrovalve control.
IPAK
(Plastic)
Gate Trigger Current
< 5 mA to < 10 mA
Off-State Voltage
200 V ÷ 600 V
MT1
MT2
G
MT2
Jul - 02
Repetitive Peak Off State
Voltage
PARAMETER VOLTAGE UnitSYMBOL
V
DRM
V
RRM
B
200 V
M
600
D
400
Absolute Maximum Ratings, according to IEC publication No. 134
RMS On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Critical rate of rise of on-state current
Operating Temperature
Storage Temperature
Soldering Temperature
I
T(RMS)
PARAMETER CONDITIONS Min. Max. UnitSYMBOL
I
TSM
I
TSM
I2t
I
GM
P
GM
P
G(AV)
T
j
T
stg
T
sld
All Conduction Angle, Tc = 110 ºC
Half Cycle, 60 Hz
Half Cycle, 50 Hz
t
p
= 10 ms, Half Cycle
20 µs max.
20 µs max.
20 ms max.
4.5 mm from case, 10s max.
4
31
30
5.1
50
-40
-40
A
A
A
A
2
s
A
W
W
A/µs
ºC
ºC
ºC
4
3
1
+125
+150
260
di/dt
Tr ≤ 100 ns, F = 120 Hz
T
j
= 125 ºC
I
G
= 2 x I
GT
Page 2
FT04...I
LOGIC LEVEL TRIAC
Jul - 02
PART NUMBER INFORMATION
FAGOR
SCR
CURRENT
CASE
VOLTAGE
SENSITIVITY
F T 04 07 B I 00
FORMING
TU
PACKAGING
Gate Trigger Current
Off-State Leakage Current
Threshold Voltage
Dynamic Resistance
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
PARAMETER CONDITIONS SENSITIVITY
Unit
SYMBOL
I
GT
I
DRM
VD = 12 V
DC
, R
L
= 30Ω, T
j
= 25 ºC
mA
mA
µA
V
mΩ
V
V
V
mA
mA
V/µs
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MAX
MAX
MAX
MIN
/I
RRM
V
TM
*
V
GT
V
GD
IH*
I
L
dv / dt*
R
th(j-a)
Thermal Resistance
Junction-Ambient
VD = V
DRM
, Tj = 125 ºC
T
j
= 25 ºC
V
R
= V
RRM
,
IT = 5.5 Amp, tp = 380 µs, Tj = 25 ºC
VD = 12 V
DC
, R
L
= 30Ω, T
j
= 25 ºC
I
T
= 100 mA
,
Gate Open Tj = 25 ºC
I
G
= 1.2 IGT,
Tj
= 25 ºC
V
D
= 0.67 x V
DRM
, Gate open
T
j
= 125 ºC
Quadrant
Q1÷Q3
Q4
Q1÷Q3
Q1÷Q3
Q1,Q3,Q4
Q2
V
D
= V
DRM
, R
L
= 3.3KΩ, T
j
= 125 ºC
ºC/W
ºC/W
(*) For either polarity of electrode MT2 voltage with reference to electrode MT1.
R
th(j-c)
Thermal Resistance
Junction-Case for AC
V
to
R
d
Tj = 125 ºC
T
j
= 125 ºC
07
5
7
1
5
0.9
120
1.6
1.3
0.2
2.6
100
10
10
15
20
08
10
15
20
30
100
Electrical Characteristics
Page 3
Jul - 02
Fig. 1: Maximum RMS power dissipation
versus RMS on-state current.
0 20
7
6
5
4
3
2
1
0
40 60 80 100 120 140
P (W)
Fig. 2: Correlation between maximum
RMS power dissipation and maximum
allowable temperature (Tamb and T case).
T case (ºC)
-75
-85
-95
-105
-115
-125
Fig. 3: RMS on-state current versus case
temperature.
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Igt (Tj)
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature.
-40 -20 0 60 80 100 120 140
Igt (Tj = 25 ºC)
Ih (Tj)
Ih (Tj = 25 ºC)
4020
1 10 100 1000
Fig. 6: Non repetitive surge peak on-state
current versus number of cycles.
20
15
10
5
0
I
TSM
(A)
Tj initial = 25 ºC
1.00
0.10
0.01
Zth(j-a) / Rth(j-a)
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
FT04...I
LOGIC LEVEL TRIAC
1
0.8
0.6
0.4
0.2
0
I
T(RMS)
(A)
0 20 40 60 80 100 120
α = 180 º
10 30 50 70 90 110 130
Igt
Ih
0 1
7
6
5
4
3
2
1
0
2 3 4
P (W)
α
180 º
α
Tamb (ºC)
Tj (ºC)
Number of cycles
tp (s)
Tamb (ºC)
I
T(RMS)
(A)
α = 30 º
α = 60 º
α = 90 º
α = 120 º
α = 180 º
Rth (j-a)
Rth (j-c)
Page 4
Jul - 02
FT04...I
LOGIC LEVEL TRIAC
0 0.5
100
10
1
1 1.5 2 2.5 3 3.5
Fig. 8: On-state characteristics (maximum
values).
ITM(A)
4
1
100
10
1
0.1
10
I
TSM
(A). I2t (A2s)
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp ≤ 10 ms, and corresponding value of I
2
t.
Tj initial = 25 ºC
tp(ms)
I2 t
I
TSM
VTM(V)
4.5
Tj initial
25 ºC
Tj max
Tj max
Vto = 0.98 V
Rt = 0.180Ω
PACKAGE MECHANICAL DATA
IPAK TO 251-AA
Marking: type number
Weight: 0.2 g
ø1x0.15
E
D
L3
L1
L
be
b1
H
8º
±2º
A
8º
±2º
8º
±2º
8º
±2º
c2
c
A1
D1
E1
8º
±2º
A
A1
b
b1
c
c2
D
D1
E
E1
e
L
L1
L3
REF.
DIMENSIONS
Milimeters
Min. Nominal Max.
2.19
0.89
0.64
0.76
0.46
5.97
5.21
6.35
5.21
8.89
1.91
0.89
2.3±0.08
1.067±0.01
0.75±0.1
0.95
0.8±0.013
6.1±0.1
6.58±0.14
5.36±0.1
2.28BSC
9.2±0.2
2±0.1
2.38
1.14
0.89
1.14
0.58
6.22
5.52
6.73
5.46
9.65
2.28
1.27
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