Datasheet FSS244 Datasheet (SANYO)

Ordering number : ENN6938

FSS244

N-Channel Silicon MOSFET

FSS244

DC / DC Converter Applications

Features

•

Low ON-resistance.

• 4V drive.

• Ultrahigh speed switching.

Package Dimensions

unit : mm

2116

[FSS244]

58

4.4

0.3

6.0

1 : Source
2 : Source
3 : Source

14

5.0

1.27

0.595

0.43

1.8max

1.5

0.1

4 : Gate

0.2

5 : Drain
6 : Drain
7 : Drain
8 : Drain

SANYO : SOP8

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 52 A
Mounted on a ceramic board (1200mm2✕0.8mm) 1unit

30 V

±20 V

10 A

2.0 W

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance

(BR)DSSID

DSS
GSS

yfs





=1mA, VGS=0 30 V
VDS=30V , VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=10A 12 18 S

Marking : S244 Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

42501 TS IM TA-1941

No.6938-1/4

FSS244

Continued from preceding page.

Parameter Symbol Conditions

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=10V , f=1MHz 980 pF

Output Capacitance Coss VDS=10V , f=1MHz 410 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 170 pF
Turn-ON Delay Time td(on) See specified Test Circuit 11 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 80 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=10A 17 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=10A 3.3 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=10A 1.7 nC
Diode Forward Voltage V

RDS(on)1 ID=10A, VGS=10V 13 17 mΩ
RDS(on)2 ID=4A, VGS=4.5V 20 28 mΩ

See specified Test Circuit 210 ns

r

See specified Test Circuit 85 ns

f

SD

IS=10A, VGS=0 0.8 1.2 V

Switching Time Test Circuit

VDD=15V

V

10V

0V

PW=10µs
D.C.≤1%

in

V

in

G

D

ID=10A

RL=1.5Ω

V

OUT

Ratings

min typ max

Unit

P.G

10

9

8

7

-- A
D

6

5

4

3

Drain Current, I

2

1
0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

10.0V

8.0V

4.5V

6.0V

3.5V

Drain-to-Source V oltage, V

60
55
50

-- mΩ

45

(on)

40

DS

35
30
25

ID=4A

20
15
10

Static Drain-to-Source

On-State Resistance, R

5
0

02468101214161820

RDS(on) -- V

10A

Gate-to-Source V oltage, V

I

D

3.0V

50Ω

-- V

DS

DS

GS

GS

S

VGS=2.5V

-- V

-- V

FSS244

I

-- V

16

14

12

-- A

10

D

8

6

Drain Current, I

4

2

0

IT00535 IT00536

Ta=25°C

IT00537 IT00538

0 0.5 1.0 1.5 2.0 2.5 3.53.0 4.0

60

50

-- mΩ
(on)

40

DS

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 160140

Gate-to-Source V oltage, V

Ambient Temperature, Ta -- °C

D

RDS(on) -- Ta

=4.5V, I

V

GS

=10.0V, I

V

GS

25°C

D

GS

Ta=75°C

=4A

D

--25°C

=10A

GS

VDS=10V

-- V

No.6938-2/4

FSS244

100

7
5

-- S

3

fs

2

y

10

7
5

3
2

1.0
7
5

3
2

Forward Transfer Admittance, 

0.1

0.1

10000

7
5

3
2

1000

7
5

3
2

100

7

Ciss, Coss, Crss -- pF

5
3

2

10

0 5 10 15 20 25

yfs -- I

Ta= --25°C

75°C

75327532

Drain Current, I

1.0

D

Ciss, Coss, Crss -- V

Ciss

Coss

Crss

Drain-to-Source V oltage, V

1000

7
5

3
2

100

7
5

3
2

10

7
5

Switching Time, SW Time -- ns

3
2

1.0

0.1 1.0

3.0

SW Time -- I

t

(off)

d

t

f

t

r

td(on)

23 5723 57

Drain Current, I

P

-- Ta

D

D

I

D

VDS=10V

25°C

10

-- A

IT00539 IT00540

DS

f=1MHz

30

-- V

DS

IT00541 IT00542

D

VDD=15V
VGS=10V

2

10

-- A

IT00543

3
2

10

7
5

3
2

-- A

1.0

F

7
5

3
2

0.1
7

5
3

2

Forward Current, I

0.01
7
5

3
2

0.001

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

Ta=75°C

Diode Forward V oltage, V

10

VDS=10V

9

ID=10A

8

-- V

7

GS

6

5

4

3

2

Gate-to-Source V oltage, V

1
0

0123456789 11121310

Total Gate Charge, Qg -- nC

100

IDP=52A

7
5

3
2

ID=10A

10

7
5

-- A

3

D

2

1.0
7

Operation in this

5

area is limited by RDS(on).

3
2

Drain Current, I

0.1
7
5

Ta=25°C

3

Single pulse

2

Mounted on a ceramic board(1200mm

0.01
23 57 23 57 7

0.01

0.1

Drain-to-Source V oltage, V

-- V

F

SD

25°C

--25°C

Qg -- V

GS

A S O

<100µs

DC opration(Ta=25°C)

23 5 723 5

1.0 10

SD

100ms

2

DS

-- V

14 15 16 17

1ms

10ms

✕0.8mm)

-- V

VGS=0

1.0

100µs

100

IT00544

2.5

-- W
D

2.0

1.5

1.0

0.5

Mounted on a ceramic board(1200mm

2

✕0.8mm)

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

IT00545

No.6938-3/4

FSS244

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of April, 2001. Specifications and information herein are subject
to change without notice.

No.6938-4/4

PS