Datasheet FSS239 Datasheet (SANYO)

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

查询FSS239供应商

Ordering number : ENN6582

FSS239

N-Channel Silicon MOSFET

FSS239

Load Switching Applications

Features

•

Low ON resistance.

• 2.5V drive.

Specifications

Package Dimensions

unit : mm

2185

[FSS239]

58

4.4

14

5.0

1.8max

1.5

0.595

1.27

0.43

0.1

0.3

6.0

1 : No Contact
2 : Source
3 : Source

0.2

4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain

SANYO : SOP8

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature Tch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 52 A
Mounted on a ceramic board (1000mm2✕0.8mm) 1.8 W

20 V

±10 V

7A

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward Transfer Admittance |yfs| VDS=10V, ID=7A 10.9 15.5 S

Static Drain-to-Source On-State Resistance

Marking : S239 Continued on next page.

(BR)DSSID

DSS
GSS

RDS(on)1 ID=7A, VGS=4V 24 32 mΩ
RDS(on)2 ID=2A, VGS=2.5V 29 42 mΩ

=1mA, VGS=0 20 V
VDS=20V , VGS=0 1 µA
VGS=±8V, VDS=0 ±10 µA

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

52600 TS IM TA-2977

No.6582-1/4

FSS239

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V , f=1MHz 900 pF
Output Capacitance Coss VDS=10V , f=1MHz 260 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 200 pF
Turn-ON Delay Time td(on) See specified Test Circuit 15 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 75 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=7A 32 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=7A 1.7 nC
Gate-to-Drain ”Miller” Charge Qgd VDS=10V, VGS=10V, ID=7A 6.4 nC
Diode Forward Voltage V

SD

See specified Test Circuit 220 ns

r

See specified Test Circuit 180 ns

f

IS=7A, VGS=0 0.86 1.2 V

Switching Time Test Circuit

VDD=10V

V
4V
0V

PW=10µs
D.C.≤1%

IN

V

IN

G

D

ID=7A

RL=1.43Ω

V

OUT

Ratings

min typ max

Unit

P.G

10

9

4.0V

2.0V

8

7

-- A
D

6

5

4

3

Drain Current, I

2

1
0

0 0.5 1.0 1.5 2.0 2.5 3.0

2.5V

3.0V

3.5V

I

D

50Ω

-- V

S

DS

V

Drain-to-Source V oltage, VDS -- V

70

60

RDS(on) -- V

GS

FSS239

=1.0V

GS

Ta=25°C

1.5V

IT02366

I

-- V

D

10

VDS=10V

9

8

7

-- A
D

6

5

4

3

Drain Current, I

2

1
0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 2.01.8

GS

Ta=75°C

Gate-to-Source V oltage, VGS -- V

60

50

RDS(on) -- Ta

--25°C

25°C

IT02367

50

(on) -- mΩ

DS

40

ID=2A

30

20

10

Static Drain-to-Source

on State Resistance, R

0

0 2 4 6 8 10 12

7A

Gate-to-Source V oltage, VGS -- V

40

(on) -- mΩ

DS

30

20

10

Static Drain-to-Source

on State Resistance, R

0

--50 --25 0 25 50 75 100 125 150

IT02368 IT02369

Ambient Temperature, Ta -- °C

I

D

I

=2A, V

=7A, V

D

GS

=2.5V

=4V

GS

No.6582-2/4

100

|yfs| -- I

7
5

3
2

10

7
5

3
2

Ta= --25°C

D

25°C

75°C

Forward Transfer Admittance, |yfs| -- S

1.0

0.1 1.0 10

10000

7
5

3
2

1000

7
5

Ciss, Coss, Crss -- pF

3
2

100

1000

7
5

3
2

100

7
5

3

Switching Time, SW Time -- ns

2

10

0.1

2.0

1.8

-- W
D

1.5

23 57 23 57

Drain Current, I

Ciss, Coss, Crss -- V

D

-- A

DS

Ciss

Coss

Crss

024681012141618

Drain-to-Source V oltage, V

SW Time -- I

D

DS

-- V

VDD=10V
VGS=4V

t

f

t

r

td(on)

23 57 23 57

Drain Current, I

1.0 10

-- A

D

D

-- Ta

P

Mounted on a ceramic board(1000mm

VDS=10V

IT02370

f=1MHz

IT02372

td(off)

IT02374

FSS239

20

I

-- V

F

25°C

SD

--25°C

SD

100

7
5

3
2

10

-- A
F

7
5

3
2

1.0
7
5

3
2

0.1
7

Forward Drain Current, I

5
3

2

0.01

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

Ta=75°C

Forward Drain-to-Source Voltage, V

10

VDS=10V

9

ID=7A

8

-- V

7

GS

6

5

4

3

2

Gate-to-Source V oltage, V

1
0

0 5 10 15 20 25 30 35

VGS -- Qg

Total Gate Charge, Qg -- nC

100

IDP=52A

7
5

3
2

ID=7A

10

7

-- A

5
3

D

2

1.0
7
5

3

Operation in this area

2

is limited by RDS(on).

Drain Current, I

0.1
7
5

Ta=25°C

3

Single pulse

2

Mounted on a ceramic board (1000mm2✕0.8mm)

0.01
23 57 23 57 7

0.01

0.1

Drain-to-Source V oltage, V

A S O

100ms

DC operation

23 5 723 5

1.0 10

10ms

DS

1ms

-- V

VGS=0

-- V

IT02371

IT02373

<10µs

IT02375

100

1.0

2

0.5

✕0.8mm)

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Amibient Tamperature, Ta -- °C

IT02376

No.6582-3/4

FSS239

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of May, 2000. Specifications and information herein are subject to
change without notice.

No.6582-4/4

PS