Offline Flyback Converters Using Fairchild Power
Switch (FPS
! AN-4141: Troubleshooting and Design Tips for
Fairchild Power Switch (FPS
! AN-4145: Electromagnetic Compatibility for Power
™
)
™
) Flyback Applications
Converters
! AN-4147: Design Guidelines for RCD Snubber of
Flyback Converters
! AN-4148: Audible Noise Reduction Techniques for
Fairchild Power Switch (FPS
™)
Applications
™
)
™
)
Description
The FSFM260/261/300 is an integrated Pulse Width
Modulator (PWM) and SenseFET specifically designed
for high-performance offline Switch Mode Power
Supplies (SMPS) with minimal external components.
This device is an integrated high-voltage powerswitching regulator that combines an avalanche-rugged
SenseFET with a current-mode PWM control block. The
PWM controller includes an integrated fixed-frequency
oscillator, under-voltage lockout, leading-edge blanking
(LEB), optimized gate driver, internal soft-start,
temperature-compensated precise-current sources for a
loop compensation, and self-protection circuitry.
Compared with discrete MOSFET and PWM controller
solutions, it can reduce total cost, component count, size,
and weight while simultaneously increasing efficiency,
productivity, and system reliability. This device is a basic
platform for cost-effective designs of flyback converters.
1GNDGround. This pin is the control ground and the SenseFET source.
2V
3FB
4I
5V
LIM
STR
6,7,8DrainSenseFET Drain. High-voltage power SenseFET drain connection.
Power Supply. This pin is the positive supply input, providing internal operating current for
CC
both startup and steady-state operation.
Feedback. This pin is internally connected to the inverting input of the PWM comparator. The
collector of an opto-coupler is typically tied to this pin. For stable operation, a capacitor should
be placed between this pin and GND. If the voltage of this pin reaches 6V, the overload protection triggers, which shuts down the FPS.
Peak Current Limit. Adjusts the peak current limit of the Sense FET. The feedback 0.9mA
current source is diverted to the parallel combination of an internal 2.8kΩ resistor and any external resistor to GND on this pin to determine the peak current limit.
Startup. This pin is connected directly, or through a resistor, to the high-voltage DC link. At
startup, the internal high-voltage current source supplies internal bias and charges the external capacitor connected to the VCC pin. Once VCC reaches 12V, the internal current source is
disabled. It is not recommended to connect V
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. T
1. Startup: In previous generations of Fairchild Power
Switches (FPS™), the V
resistor to the DC input voltage line. In this generation,
the startup resistor is replaced by an internal highvoltage current source. At startup, an internal highvoltage current source supplies the internal bias and
charges the external capacitor (C
pin, as illustrated in Figure 16. When VCC reaches
V
CC
12V, the FSFM260/261/300 begins switching and the
internal high-voltage current source is disabled. Then,
the FSFM260/261/300 continues its normal switching
operation and the power is supplied from the auxiliary
transformer winding unless V
voltage of 8V.
V
CC
2
8V/12V
Figure 16. Internal Startup Circuit
2. Feedback Control: FSFM260/261/300 employs
current-mode control, as shown in Figure 17. An optocoupler (such as the FOD817A) and shunt regulator
(such as the KA431) are typically used to implement the
feedback network. Comparing the feedback voltage with
the voltage across the R
to control the switching duty cycle. When the reference
pin voltage of the shunt regulator exceeds the internal
reference voltage of 2.5V, the opto coupler LED current
increases, pulling down the feedback voltage and
reducing the duty cycle. This typically occurs when the
input voltage is increased or the output load is
decreased.
2.1 Pulse-by-Pulse Current Limit: Because currentmode control is employed, the peak current through the
SenseFET is determined by the inverting input of the
PWM comparator (V
the current through the opto-transistor is zero and the
current limit pin (#4) is left floating, the feedback current
source (I
) of 0.9mA flows only through the internal
FB
resistor (R+2.5R=2.8k). In this case, the cathode voltage
of diode D2 and the peak drain current have maximum
pin had an external startup
CC
) connected to the
vcc
goes below the stop
CC
V
DC
C
Vcc
Vstr
5
I
start
Vref
VCC good
Internal
Bias
FSFM260 Rev: 00
resistor makes it possible
SENSE
*), as shown in Figure 17. When
FB
values of 2.5V and 1.5A, respectively. The pulse-bypulse current limit can be adjusted using a resistor to
GND on the
using an external resistor (R
I
=
LIM
R
where, I
V
O
FSFM260 Rev: 00
current limit pin (#4). The current limit level
) is given by:
LIM
IR
⋅
SPE
LIMLIM
_
Rk
+Ω
8.2
LIM
k8.2I
LIM
==>
LIM
LIM
FOD817A
KA431
II
−
LIMSPEC_LIM
is the desired drain current limit.
V
V
CC
CC
I
Vfb
delay
3
C
B
V
SD
I
D1D2
V
FB
OSC
2.5R
+
*
fb
R
-
OLP
Gate
driver
SenseFET
R
sense
(1)
(2)
Figure 17. Pulse Width Modulation (PWM) Circuit
2.2 Leading-Edge Blanking (LEB): At the instant the
internal SenseFET is turned on, a high-current spike
occurs through the SenseFET, caused by primary-side
capacitance and secondary-side rectifier reverse
recovery. Excessive voltage across the R
SENSE
resistor
would lead to incorrect feedback operation in the currentmode PWM control. To counter this effect, the FSFM260/
261/300 employs a leading edge blanking (LEB) circuit.
This circuit inhibits the PWM comparator for a short time
) after the SenseFET is turned on.
(t
LEB
2.3 Constant Power Limit Circuit: Due to the circuit
delay of FPS, the pulse-by-pulse limit current increases
a little bit when the input voltage increases. This means
unwanted excessive power is delivered to the secondary
side. To compensate, the auxiliary power compensation
network in Figure 18 can be used. R
can adjust pulse-
LIM
by-pulse current by absorbing internal current source
: typical value is 0.9mA) depending on the ratio
(I
FB
between resistors. With the suggested compensation
circuit, additional current from I
proportionally to the input voltage (V
constant power in wide input range. Choose R
is absorbed more
FB
) and achieves
DC
LIM
for
proper current to the application, then check the pulseby-pulse current difference between minimum and
maximum input voltage. To eliminate the difference (to
gain constant power), R
and primary side, respectively; Ifb is the internal current
source at feedback pin with a typical value of 0.9mA; and
ΔI
lim_comp
is the current difference that must be
eliminated. In case of capacitor in the circuit 1µF, 100V is
good choice for all applications.
R
LIM
FSFM260 Rev. 00
Vfb Drain
Vcc
I_lim
GND
V
Np
DC
L
Na
compensation
network
R
Y
-
C
Y
+
N
a
VV×=
DCy
N
p
Figure 18. Constant Power Limit Circuit
Fault
Vds
Power
on
occurs
Fault
removed
components, the reliability is improved without
increasing cost. Once the fault condition occurs,
switching is terminated and the SenseFET remains off.
This causes V
to fall. When VCC reaches the UVLO
CC
stop voltage, 8V, the protection is reset and the internal
high-voltage current source charges the V
via the Vstr pin. When V
reaches the UVLO start
CC
capacitor
CC
voltage, 12V, the FSFM260/261/300 resumes normal
operation. In this manner, the auto-restart can alternately
enable and disable the switching of the power SenseFET
until the fault condition is eliminated (see Figure 19).
3.1 Overload Protection (OLP): Overload is defined as
the load current exceeding a pre-set level due to an
unexpected event. In this situation, the protection circuit
should be activated to protect the SMPS. However, even
when the SMPS is in the normal operation, the overload
protection circuit can be activated during the load
transition. To avoid this undesired operation, the
overload protection circuit is designed to be activated
after a specified time to determine whether it is a
transient situation or an overload situation. Because of
the pulse-by-pulse current limit capability, the maximum
peak current through the SenseFET is limited and,
therefore the maximum input power is restricted with a
given input voltage. If the output consumes beyond this
maximum power, the output voltage (V
) decreases
O
below the set voltage. This reduces the current through
the opto-coupler LED, which also reduces the optocoupler transistor current, increasing the feedback
voltage (V
the 5µA current source starts to charge C
. In this condition, VFB continues increasing until it
V
CC
). If VFB exceeds 2.5V, D1 is blocked and
FB
slowly up to
B
reaches 6V, when the switching operation is terminated,
as shown in Figure 20. The delay time for shutdown is
the time required to charge C
from 2.5V to 6.0V with
B
5µA. In general, a 10 ~ 50ms delay time is typical for
most applications.
Vcc
V
FB
FSFM260 Rev: 00
Overload protection
12V
8V
FSFM260 Rev: 00
Normal
operation
Fault
situation
Normal
operation
t
6.0V
2.5V
T12= Cfb*(6.0-2.5)/I
delay
Figure 19. Auto Restart Operation
3. Protection Circuit: The FSFM260/261/300 has
several self protective functions, such as overload
T
1
Figure 20. Overload Protection
T
t
2
protection (OLP), over-voltage protection (OVP), and
thermal shutdown (TSD). Because these protection
circuits are fully integrated into the IC without external
3.2 Over-Voltage Protection (OVP): If the secondary
side feedback circuit malfunctions or a solder defect
causes an open in the feedback path, the current
through the opto-coupler transistor becomes almost
zero. Then, V
climbs up in a similar manner to the
FB
overload situation, forcing the preset maximum current
to be supplied to the SMPS until the overload protection
is activated. Because more energy than required is
provided to the output, the output voltage may exceed
the rated voltage before the overload protection is
activated, resulting in the breakdown of the devices in
the secondary side. To prevent this situation, an overvoltage protection (OVP) circuit is employed. In general,
is proportional to the output voltage and the
V
CC
FSFM260/261/300 uses V
monitoring the output voltage. If V
instead of directly
CC
exceeds 19V, an
CC
OVP circuit is activated, terminating the switching
operation. To avoid undesired activation of OVP during
normal operation, V
should be designed below 19V.
CC
3.3 Thermal Shutdown (TSD): The SenseFET and the
control IC are built in one package. This allows for the
control IC to detect the heat generation from the
SenseFET. When the temperature exceeds
approximately 140°C, the thermal shutdown is activated.
3.4 Abnormal Over-Current Protection (AOCP): When
the secondary rectifier diodes or the transformer pins are
shorted, a steep current with extremely high di/dt can
flow through the SenseFET during the LEB time. Even
though the FPS has overload protection, it is not enough
to protect the FPS in those abnormal cases, since
severe current stress is imposed on the SenseFET until
OLP triggers. This IC has an internal AOCP circuit
shown in Figure 21. When the gate turn-on signal is
applied to the power SenseFET, the AOCP block is
enabled and monitors the current through the sensing
resistor. The voltage across the resistor is compared with
a preset AOCP level. If the sensing resistor voltage is
greater than the AOCP level, the set signal is applied to
the latch, resulting in the shutdown of the SMPS.
4. Soft-Start: The FSFM260/261/300 has an internal
soft- start circuit that increases PWM comparator
inverting input voltage, together with the SenseFET
current, slowly after it starts up. The typical soft-start time
is 15ms. The pulse width to the power switching device
is progressively increased to establish the correct
working conditions for transformers, inductors, and
capacitors. The voltage on the output capacitors is
progressively increased to smoothly establish the
required output voltage. It also helps prevent transformer
saturation and reduce the stress on the secondary diode
during startup.
5. Burst Operation: To minimize power dissipation in
standby mode, the FSFM260/261/300 enters burst mode
operation. As the load decreases, the feedback voltage
decreases. As shown in Figure 22, the device
automatically enters burst mode when the feedback
voltage drops below V
(350mV). At this point,
BURL
switching stops and the output voltages start to drop at a
rate dependent on standby current load. This causes the
feedback voltage to rise. Once it passes V
BURH
(500mV)
switching resumes. The feedback voltage then falls and
the process repeats. Burst mode operation alternately
enables and disables switching of the power SenseFET,
thereby reducing switching loss in standby mode.
Due to the combined scheme, FPS shows better noise
immunity than conventional PWM controller and
MOSFET discrete solutions. Furthermore, internal drain
current sense eliminates noise generation caused by a
sensing resistor. There are some recommendations for
PCB layout to enhance noise immunity and suppress the
noise inevitable in power-handling components.
There are typically two grounds in the conventional
SMPS: power ground and signal ground. The power
ground is the ground for primary input voltage and
power, while the signal ground is ground for PWM
controller. In FPS, those two grounds share the same
pin, GND. Normally the separate grounds do not share
the same trace and meet only at one point, the GND pin.
More, wider patterns for both grounds are good for large
currents by decreasing resistance.
Capacitors at the V
possible to the corresponding pins to avoid noise from
the switching device. Sometimes Mylar® or ceramic
capacitors with electrolytic for V
operation. The ground of these capacitors needs to
connect to the signal ground not the power ground.
The cathode of the snubber diode should be close to the
drain pin to minimize stray inductance. The Y-capacitor
between primary and secondary should be directly
connected to the power ground of DC link to maximize
surge immunity.
Because the voltage range of feedback line is small, it is
affected by the noise of the drain pin. Those traces
should not draw across or close to the drain line.
In FSFM260/261/300, drain pins are the heat radiation
pins, so wider PCB pattern is recommended to decrease
the package temperature. Drain pins are also high
voltage switching pins; however, too wide PCB pattern
may deteriorate EMI immunity.
and FB pins should be as close as
CC
is better for smooth
CC
Figure 23. Recommended PCB Layout
Mylar® is a registered trademark of DuPont Teijin Films.
! Average efficiency of 25%, 50%, 75%, and 100% load conditions is higher than 80% at universal input
! Low standby mode power consumption (<1W at 230V
input and 0.5W load)
AC
! Enhanced system reliability through various protection functions
! Internal soft-start (15ms)
Key Design Notes
! The delay time for overload protection is designed to be about 23ms with C105 of 33nF. If faster/slower triggering of
OLP is required, C105 can be changed to a smaller/larger value (e.g. 100nF for 70ms).
! The SMD-type 100nF capacitor must be placed as close as possible to V
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