Datasheet FSFM260N, FSFM261N, FSFM300N Datasheet (Fairchild)

Page 1
FSFM260N / FSFM261N / FSFM300N Green-Mode Fairchild Power Switch (FPS™)
FSFM260N / FSFM261N / FSFM300N — Green-Mode Farichild Power Switch (FPS™)
August 2009
Features
! Internal Avalanche-Rugged SenseFET ! Advanced Burst-Mode Operation Consumes Under
1W at 240VAC and 0.5W Load
! Precision Fixed Operating Frequency: 67kHz ! Internal Startup Circuit ! Over-Voltage Protection (OVP) ! Overload Protection (OLP) ! Internal Thermal Shutdown Function (TSD) ! Abnormal Over-Current Protection (AOCP) ! Auto-Restart Mode ! Under-Voltage Lockout (UVLO) with Hysteresis ! Low Operating Current: 2.5mA ! Built-in Soft-Start: 15ms
Applications
! Power Supply for LCD TV and Monitor, VCR, SVR,
STB, DVD, and DVD Recorder
! Adapter
Related Resources
Visit: http://www.fairchildsemi.com/apnotes/ for:
! AN-4134: Design Guidelines for Offline Forward
Converters Using Fairchild Power Switch (FPS
! AN-4137: Design Guidelines for Offline Flyback
Converters Using Fairchild Power Switch (FPS
! AN-4140: Transformer Design Consideration for
Offline Flyback Converters Using Fairchild Power Switch (FPS
! AN-4141: Troubleshooting and Design Tips for
Fairchild Power Switch (FPS
! AN-4145: Electromagnetic Compatibility for Power
™
)
™
) Flyback Applications
Converters
! AN-4147: Design Guidelines for RCD Snubber of
Flyback Converters
! AN-4148: Audible Noise Reduction Techniques for
Fairchild Power Switch (FPS
™)
Applications
™
)
™
)
Description
The FSFM260/261/300 is an integrated Pulse Width Modulator (PWM) and SenseFET specifically designed for high-performance offline Switch Mode Power Supplies (SMPS) with minimal external components.
This device is an integrated high-voltage power­switching regulator that combines an avalanche-rugged SenseFET with a current-mode PWM control block. The PWM controller includes an integrated fixed-frequency oscillator, under-voltage lockout, leading-edge blanking (LEB), optimized gate driver, internal soft-start, temperature-compensated precise-current sources for a loop compensation, and self-protection circuitry. Compared with discrete MOSFET and PWM controller solutions, it can reduce total cost, component count, size, and weight while simultaneously increasing efficiency, productivity, and system reliability. This device is a basic platform for cost-effective designs of flyback converters.
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSFM260N / FSFM261N / FSFM300N • Rev. 1.0.1
Page 2
Ordering Information
Maximum Output Power
Product
Number
FSFM260N 8-DIP -25 to +85°C 1.5A 2.6Ω 23W 35W 17W 26W
FSFM261N 8-DIP -25 to +85°C 1.5A 2.7Ω 23W 35W 17W 26W
FSFM300N 8-DIP -25 to +85°C 1.6A 2.2Ω 26W 40W 20W 30W
PKG.
(5)
Operating
Temp.
Current
Limit
R
DS(ON)
Max.
230VAC±15%
Adapter
(3)
(2)
Open
Frame
(4)
Adapter
Notes:
1. The junction temperature can limit the maximum output power.
2. 230V
or 100/115VAC with doubler.
AC
3. Typical continuous power in a non-ventilated enclosed adapter measured at 50°C ambient temperature.
4. Maximum practical continuous power in an open-frame design at 50°C ambient.
5. Eco status for all the FSFM260N, FSFM261N and FSFM300NS is RoHS.
For Fairchild’s definition of Eco Status, please visit:
http://www.fairchildsemi.com/company/green/rohs_green.html. Eco Status: RoHS.
(1)
85-265V
(3)
AC
Open
Frame
Replaces
Devices
(4)
FSDM0465RS FSQ0465RS
FSFM260N / FSFM261N / FSFM300N — Green-Mode Farichild Power Switch (FPS™)
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSFM260N / FSFM261N / FSFM300N • Rev. 1.0.1 2
Page 3
Application Diagram
AC
IN
V
STR
Drain
I
LIM
PWM
GND
FB
V
CC
Figure 1. Typical Flyback Application
V
FSFM260 Rev. 00
FSFM260N / FSFM261N / FSFM300N — Green-Mode Farichild Power Switch (FPS™)
O
Internal Block Diagram
V
BURL/VBURH
V
V
CC
CC
I
FB
I
3
LIM
4
delayIFB
V
SD
V
CC
V
OVP
2.5R
TSD
R
Normal
Burst
LPF
Soft­Start
PWM
VCC good
OSC
LEB
250ns
SQQ
R
V
V
str
V
ref
good
V
CC
S
Q
QR
Gate
driver
CC
2 85
V
CC
8V/12V
Drain
76
1
V
OCP
GND
FSFM260 Rev.00
Figure 2. Internal Block Diagram
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSFM260N / FSFM261N / FSFM300N • Rev. 1.0.1 3
Page 4
Pin Configuration
FSFM260N / FSFM261N / FSFM300N — Green-Mode Farichild Power Switch (FPS™)
GND
V
FB
I
LIM
CC
FSFM260 Rev.1.0.0
8-DIP
Drain
Drain
Drain
V
STR
Figure 3. Pin Configuration (Top View)
Pin Definitions
Pin # Name Description
1GNDGround. This pin is the control ground and the SenseFET source.
2V
3FB
4I
5V
LIM
STR
6,7,8 Drain SenseFET Drain. High-voltage power SenseFET drain connection.
Power Supply. This pin is the positive supply input, providing internal operating current for
CC
both startup and steady-state operation.
Feedback. This pin is internally connected to the inverting input of the PWM comparator. The collector of an opto-coupler is typically tied to this pin. For stable operation, a capacitor should be placed between this pin and GND. If the voltage of this pin reaches 6V, the overload pro­tection triggers, which shuts down the FPS.
Peak Current Limit. Adjusts the peak current limit of the Sense FET. The feedback 0.9mA current source is diverted to the parallel combination of an internal 2.8kΩ resistor and any ex­ternal resistor to GND on this pin to determine the peak current limit.
Startup. This pin is connected directly, or through a resistor, to the high-voltage DC link. At startup, the internal high-voltage current source supplies internal bias and charges the exter­nal capacitor connected to the VCC pin. Once VCC reaches 12V, the internal current source is disabled. It is not recommended to connect V
and drain together.
STR
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSFM260N / FSFM261N / FSFM300N • Rev. 1.0.1 4
Page 5
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera­ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi­tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. T
Symbol Parameter Min. Max. Unit
V
STR
V
DS
V
DS
V
CC
V
FB
I
DM
I
D
E
AS
P
T
T
T
STG
ESD
D
J
A
V
Pin Voltage 650 V
STR
1 Drain Pin Voltage of FSFM260N and FSFM300N 650 V
2 Drain Pin Voltage of FSFM261N 700 V
Supply Voltage 21 V
Feedback Voltage Range
(6)
Drain Current Pulsed 9.6 A
Continuous Drain Current of FSFM260 and FSFM261
Continuous Drain Current of FSFM300
(7)
(7)
Single Pulsed Avalanche Energy
Total Power Dissipation (TC=25°C) 1.5 W
Operating Junction Temperature Internally Limited °C
Operating Ambient Temperature -25 +85 °C
Storage Temperature -55 +150 °C
Electrostatic Discharge Capability Human Body Model, JESD22-A114
Electrostatic Discharge Capability, Charged Device Model, JESD22-C110
= 25°C, unless otherwise specified.
A
-0.3 8.0 V
TC = 25°C 2.2
= 100°C 1.4
T
C
TC = 25°C 2.8
= 100°C 1.7
T
C
FSFM260 and FSFM261 120
(8)
FSFM300 190
2.0
2.0
A
mJ
kV
FSFM260N / FSFM261N / FSFM300N — Green-Mode Farichild Power Switch (FPS™)
Notes:
6. VFB is internally clamped and its maximum clamping current capability is 100μA.
7. Repetitive rating: pulse-width limited by maximum junction temperature.
8. L=14mH, starting T
=25°C.
J
Thermal Impedance
TA = 25°C unless otherwise specified.
Symbol Parameter Package Value Unit
(11)
(10)
(9)
8-DIP
80
20
35
θ
JA
θ
JC
Ψ
JT
Junction-to-Ambient Thermal Resistance
Junction-to-Case Thermal Resistance
Junction-to-Top Thermal Resistance
Notes:
9. Free standing with no heat-sink under natural convection.
10. Infinite cooling condition - refer to the SEMI G30-88.
11. Measured on the package top surface.
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSFM260N / FSFM261N / FSFM300N • Rev. 1.0.1 5
°
C/W
°
C/W
°
C/W
Page 6
FSFM260N / FSFM261N / FSFM300N — Green-Mode Farichild Power Switch (FPS™)
Electrical Characteristics
TA = 25°C unless otherwise specified.
Symbol Parameter Condition Min. Typ. Max. Unit
SenseFET Section
BV
DSS
BV
DSS
I
DSS1
I
DSS2
R
DS(ON)
C
OSS
t
d(on)
t
t
d(off)
t
C
OSS
t
d(on)
t
t
d(off)
t
Control Section
f
OSC
Δf
STABLE
Δf
OSC
I
FB
D
MAX
D
MIN
V
START
V
STOP
t
S/S
Burst Mode Section
V
BURH
V
BURL
Drain Source Breakdown Voltage of
1
FSFM260 and FSFM300
Drain Source Breakdown Voltage of
2
FSFM261
Zero Gate Voltage Drain Current1
Zero Gate Voltage Drain Current2
Static Drain Source on Resistance of FSFM260
Static Drain Source on Resistance of FSFM261
Static Drain Source on Resistance of FSFM300
(12)
(12)
(12)
VCC = 0V, ID = 250µA 650 V
VCC = 0V, ID = 250µA 700 V
= 650V, VGS = 0V,
V
DS
= 25°C
T
C
V
= 520V, VGS = 0V,
DS
TC = 125°C
2.20 2.60 Ω
VGS = 10V, ID = 2.5A
2.30 2.70 Ω
1.76 2.20 Ω
Output Capacitance of FSFM260/261 VGS = 0V, VDS = 25V, f = 1MHz 60 pF
Turn-On Delay Time of FSFM260/261
Rise Time of FSFM260/261 20
r
Turn-Off Delay Time of FSFM260/261 30
Fall Time of FSFM260/261 16
f
VDD = 325V, ID = 5A
12
Output Capacitance of FSFM300 VGS = 0V, VDS = 25V, f = 1MHz 75 pF
Turn-On Delay Time of FSFM300
Rise Time of FSFM300 26
r
Turn-Off Delay Time of FSFM300 32
Fall Time of FSFM300 25
f
VDD = 325V, ID = 5A
14
Switching Frequency VFB = 3V 61 67 73 kHz
Switching Frequency Stability 13V ≤ VCC ≤ 18V 0 1 3 %
Switching Frequency Variation
(13)
-25°C ≤ TA ≤ 85°C 0 ±5 ±10 %
Feedback Source Current VFB = GND 0.7 0.9 1.1 mA
Maximum Duty Cycle 71 77 83 %
Minimum Duty Cycle 0 %
UVLO Threshold Voltage VFB = GND
11 12 13 V
789V
Internal Soft-Start Time VFB = 3V 10 15 20 ms
Burst Mode Voltages VCC = 14V
0.50 V
0.35 V
250 µA
250 µA
ns
ns
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSFM260N / FSFM261N / FSFM300N • Rev. 1.0.1 6
Page 7
FSFM260N / FSFM261N / FSFM300N — Green-Mode Farichild Power Switch (FPS™)
Electrical Characteristics (Continued)
T
= 25°C unless otherwise specified.
A
Symbol Parameter Condition Min. Typ. Max. Unit
Protection Section
V
SD
I
DELAY
t
LEB
I
LIMIT
V
OVP
T
SD
Total Device Section
I
OP
I
START
I
CH
V
STR
Shutdown Feedback Voltage VFB ≥ 5.5V 5.5 6.0 6.5 V
Shutdown Delay Current VFB = 5V 3.5 5.0 6.5 µA
Leading Edge Blanking Time
Peak Current Limit
(13)
FSFM260/ FSFM261
TJ = 25°C, di/dt = 200mA/µs
200 ns
1.32 1.50 1.68 A
FSFM300 1.41 1.60 1.79
Over-Voltage Protection 18.0 19.0 20.5 V
Thermal Shutdown Temperature
Operating Supply Current
Start Current
Startup Charging Current
Minimum V
Supply Voltage
STR
(13)
= GND, VCC = 14V
V
FB
V
= 10V (before VCC
CC
reaches V
V
CC
at I
= 0V, V
IN
STR
START
=I
START
STR
)
=min. 50V
125 140 °C
135mA
150 200 250 µA
0.70 0.85 1.00 mA
24 V
Notes:
12. Pulse test: pulse width ≤ 300µs, duty ≤ 2%.
13. Guaranteed by design; not tested in production.
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSFM260N / FSFM261N / FSFM300N • Rev. 1.0.1 7
Page 8
Typical Performance Characteristics
Graphs are normalized at TA= 25°C.
FSFM260N / FSFM261N / FSFM300N — Green-Mode Farichild Power Switch (FPS™)
1.2
1.0
0.8
Normalized
0.6
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
Figure 4. Operating Supply Current (I
OP
1.2
1.0
0.8
Normalized
0.6
0.4
) vs. T
1.2
1.0
0.8
Normalized
0.6
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
A
Figure 5. UVLO Start Threshold Voltage
(V
START
) vs. TA
1.2
1.0
0.8
Normalized
0.6
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
Figure 6. UVLO Stop Threshold Voltage
) vs. T
(V
STOP
A
1.2
1.0
0.8
Normalized
0.6
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
Figure 8. Switching Frequency (f
OSC
) vs. T
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
Figure 7. Startup Charging Current (ICH) vs. T
A
1.2
1.0
0.8
Normalized
0.6
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
A
Figure 9. Maximum Duty Cycle (D
MAX
) vs. T
A
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSFM260N / FSFM261N / FSFM300N • Rev. 1.0.1 8
Page 9
Typical Performance Characteristics (Continued)
Graphs are normalized at T
= 25°C.
A
FSFM260N / FSFM261N / FSFM300N — Green-Mode Farichild Power Switch (FPS™)
1.2
1.0
0.8
Normalized
0.6
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
Figure 10. Over-Voltage Protection (V
OVP
1.2
1.0
0.8
Normalized
0.6
0.4
) vs. T
1.2
1.0
0.8
Normalized
0.6
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
A
Figure 11. Feedback Source Current (IFB) vs. TA
1.2
1.0
0.8
Normalized
0.6
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
Figure 12. Shutdown Delay Current (I
) vs. TA Figure 13. Burst-Mode HIGH Threshold Voltage
DELAY
1.2
1.0
0.8
Normalized
0.6
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
Figure 14. Burst-Mode LOW Threshold Voltage
(V
BURL
) vs. TA
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
(V
) vs. T
BURH
A
1.2
1.0
0.8
Normalized
0.6
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
Figure 15. Peak Current Limit (I
LIMIT
) vs. T
A
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSFM260N / FSFM261N / FSFM300N • Rev. 1.0.1 9
Page 10
FSFM260N / FSFM261N / FSFM300N — Green-Mode Farichild Power Switch (FPS™)
C
⋅
Ω
p
Functional Description
1. Startup: In previous generations of Fairchild Power
Switches (FPS™), the V resistor to the DC input voltage line. In this generation,
the startup resistor is replaced by an internal high­voltage current source. At startup, an internal high­voltage current source supplies the internal bias and charges the external capacitor (C
pin, as illustrated in Figure 16. When VCC reaches
V
CC
12V, the FSFM260/261/300 begins switching and the internal high-voltage current source is disabled. Then, the FSFM260/261/300 continues its normal switching operation and the power is supplied from the auxiliary transformer winding unless V
voltage of 8V.
V
CC
2
8V/12V
Figure 16. Internal Startup Circuit
2. Feedback Control: FSFM260/261/300 employs
current-mode control, as shown in Figure 17. An opto­coupler (such as the FOD817A) and shunt regulator (such as the KA431) are typically used to implement the feedback network. Comparing the feedback voltage with the voltage across the R
to control the switching duty cycle. When the reference pin voltage of the shunt regulator exceeds the internal reference voltage of 2.5V, the opto coupler LED current increases, pulling down the feedback voltage and reducing the duty cycle. This typically occurs when the input voltage is increased or the output load is decreased.
2.1 Pulse-by-Pulse Current Limit: Because current­mode control is employed, the peak current through the SenseFET is determined by the inverting input of the PWM comparator (V
the current through the opto-transistor is zero and the current limit pin (#4) is left floating, the feedback current source (I
) of 0.9mA flows only through the internal
FB
resistor (R+2.5R=2.8k). In this case, the cathode voltage of diode D2 and the peak drain current have maximum
pin had an external startup
CC
) connected to the
vcc
goes below the stop
CC
V
DC
C
Vcc
Vstr
5
I
start
Vref
VCC good
Internal
Bias
FSFM260 Rev: 00
resistor makes it possible
SENSE
*), as shown in Figure 17. When
FB
values of 2.5V and 1.5A, respectively. The pulse-by­pulse current limit can be adjusted using a resistor to GND on the using an external resistor (R
I
=
LIM
R
where, I
V
O
FSFM260 Rev: 00
current limit pin (#4). The current limit level
) is given by:
LIM
IR
⋅
SPE
LIMLIM
_
Rk
+Ω
8.2
LIM
k8.2I
LIM
==>
LIM
LIM
FOD817A
KA431
II
−
LIMSPEC_LIM
is the desired drain current limit.
V
V
CC
CC
I
Vfb
delay
3
C
B
V
SD
I
D1 D2
V
FB
OSC
2.5R
+
*
fb
R
-
OLP
Gate
driver
SenseFET
R
sense
(1)
(2)
Figure 17. Pulse Width Modulation (PWM) Circuit
2.2 Leading-Edge Blanking (LEB): At the instant the
internal SenseFET is turned on, a high-current spike occurs through the SenseFET, caused by primary-side capacitance and secondary-side rectifier reverse recovery. Excessive voltage across the R
SENSE
resistor
would lead to incorrect feedback operation in the current­mode PWM control. To counter this effect, the FSFM260/ 261/300 employs a leading edge blanking (LEB) circuit. This circuit inhibits the PWM comparator for a short time
) after the SenseFET is turned on.
(t
LEB
2.3 Constant Power Limit Circuit: Due to the circuit delay of FPS, the pulse-by-pulse limit current increases a little bit when the input voltage increases. This means unwanted excessive power is delivered to the secondary side. To compensate, the auxiliary power compensation network in Figure 18 can be used. R
can adjust pulse-
LIM
by-pulse current by absorbing internal current source
: typical value is 0.9mA) depending on the ratio
(I
FB
between resistors. With the suggested compensation circuit, additional current from I
proportionally to the input voltage (V constant power in wide input range. Choose R
is absorbed more
FB
) and achieves
DC
LIM
for
proper current to the application, then check the pulse­by-pulse current difference between minimum and maximum input voltage. To eliminate the difference (to gain constant power), R
××
IV
lim_spec dc
≅
R
y
×
I ΔI
fb lim_comp
can be calculated by:
y
N
a
N
(3)
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSFM260N / FSFM261N / FSFM300N • Rev. 1.0.1 10
Page 11
FSFM260N / FSFM261N / FSFM300N — Green-Mode Farichild Power Switch (FPS™)
where, I specification; N
is the limit current stated on the
lim_spec
and Np are the number of turns for V
a
CC
and primary side, respectively; Ifb is the internal current source at feedback pin with a typical value of 0.9mA; and
ΔI
lim_comp
is the current difference that must be
eliminated. In case of capacitor in the circuit 1µF, 100V is good choice for all applications.
R
LIM
FSFM260 Rev. 00
Vfb Drain
Vcc
I_lim
GND
V
Np
DC
L
Na
compensation network
R
Y
-
C
Y
+
N
a
VV ×=
DCy
N
p
Figure 18. Constant Power Limit Circuit
Fault
Vds
Power
on
occurs
Fault
removed
components, the reliability is improved without increasing cost. Once the fault condition occurs, switching is terminated and the SenseFET remains off. This causes V
to fall. When VCC reaches the UVLO
CC
stop voltage, 8V, the protection is reset and the internal high-voltage current source charges the V
via the Vstr pin. When V
reaches the UVLO start
CC
capacitor
CC
voltage, 12V, the FSFM260/261/300 resumes normal operation. In this manner, the auto-restart can alternately enable and disable the switching of the power SenseFET until the fault condition is eliminated (see Figure 19).
3.1 Overload Protection (OLP): Overload is defined as the load current exceeding a pre-set level due to an unexpected event. In this situation, the protection circuit should be activated to protect the SMPS. However, even when the SMPS is in the normal operation, the overload protection circuit can be activated during the load transition. To avoid this undesired operation, the overload protection circuit is designed to be activated after a specified time to determine whether it is a transient situation or an overload situation. Because of the pulse-by-pulse current limit capability, the maximum peak current through the SenseFET is limited and, therefore the maximum input power is restricted with a given input voltage. If the output consumes beyond this maximum power, the output voltage (V
) decreases
O
below the set voltage. This reduces the current through the opto-coupler LED, which also reduces the opto­coupler transistor current, increasing the feedback voltage (V
the 5µA current source starts to charge C
. In this condition, VFB continues increasing until it
V
CC
). If VFB exceeds 2.5V, D1 is blocked and
FB
slowly up to
B
reaches 6V, when the switching operation is terminated, as shown in Figure 20. The delay time for shutdown is the time required to charge C
from 2.5V to 6.0V with
B
5µA. In general, a 10 ~ 50ms delay time is typical for most applications.
Vcc
V
FB
FSFM260 Rev: 00
Overload protection
12V
8V
FSFM260 Rev: 00
Normal
operation
Fault
situation
Normal
operation
t
6.0V
2.5V
T12= Cfb*(6.0-2.5)/I
delay
Figure 19. Auto Restart Operation
3. Protection Circuit: The FSFM260/261/300 has
several self protective functions, such as overload
T
1
Figure 20. Overload Protection
T
t
2
protection (OLP), over-voltage protection (OVP), and thermal shutdown (TSD). Because these protection circuits are fully integrated into the IC without external
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSFM260N / FSFM261N / FSFM300N • Rev. 1.0.1 11
Page 12
FSFM260N / FSFM261N / FSFM300N — Green-Mode Farichild Power Switch (FPS™)
3.2 Over-Voltage Protection (OVP): If the secondary
side feedback circuit malfunctions or a solder defect causes an open in the feedback path, the current through the opto-coupler transistor becomes almost zero. Then, V
climbs up in a similar manner to the
FB
overload situation, forcing the preset maximum current to be supplied to the SMPS until the overload protection is activated. Because more energy than required is provided to the output, the output voltage may exceed the rated voltage before the overload protection is activated, resulting in the breakdown of the devices in the secondary side. To prevent this situation, an over­voltage protection (OVP) circuit is employed. In general,
is proportional to the output voltage and the
V
CC
FSFM260/261/300 uses V monitoring the output voltage. If V
instead of directly
CC
exceeds 19V, an
CC
OVP circuit is activated, terminating the switching operation. To avoid undesired activation of OVP during normal operation, V
should be designed below 19V.
CC
3.3 Thermal Shutdown (TSD): The SenseFET and the control IC are built in one package. This allows for the control IC to detect the heat generation from the SenseFET. When the temperature exceeds approximately 140°C, the thermal shutdown is activated.
3.4 Abnormal Over-Current Protection (AOCP): When the secondary rectifier diodes or the transformer pins are shorted, a steep current with extremely high di/dt can flow through the SenseFET during the LEB time. Even though the FPS has overload protection, it is not enough to protect the FPS in those abnormal cases, since severe current stress is imposed on the SenseFET until OLP triggers. This IC has an internal AOCP circuit shown in Figure 21. When the gate turn-on signal is applied to the power SenseFET, the AOCP block is enabled and monitors the current through the sensing resistor. The voltage across the resistor is compared with a preset AOCP level. If the sensing resistor voltage is greater than the AOCP level, the set signal is applied to the latch, resulting in the shutdown of the SMPS.
4. Soft-Start: The FSFM260/261/300 has an internal soft- start circuit that increases PWM comparator inverting input voltage, together with the SenseFET current, slowly after it starts up. The typical soft-start time is 15ms. The pulse width to the power switching device is progressively increased to establish the correct working conditions for transformers, inductors, and capacitors. The voltage on the output capacitors is progressively increased to smoothly establish the required output voltage. It also helps prevent transformer saturation and reduce the stress on the secondary diode during startup.
5. Burst Operation: To minimize power dissipation in standby mode, the FSFM260/261/300 enters burst mode operation. As the load decreases, the feedback voltage decreases. As shown in Figure 22, the device automatically enters burst mode when the feedback voltage drops below V
(350mV). At this point,
BURL
switching stops and the output voltages start to drop at a rate dependent on standby current load. This causes the feedback voltage to rise. Once it passes V
BURH
(500mV)
switching resumes. The feedback voltage then falls and the process repeats. Burst mode operation alternately enables and disables switching of the power SenseFET, thereby reducing switching loss in standby mode.
Vo
set
Vo
V
FB
0.5V
0.35V
Ids
Vds
FSFM260 Rev: 00
Switching
disabled
T1
T2 T3
Switching
disabled
Figure 22. Waveforms of Burst Operation
time
T4
2.5R
OSC
R
AOCP protection
LEB
SQQ
R
Gate
driver
V
FSFM260 Rev: 00
GND
1
OCP
Figure 21. Abnormal Over-Current Protection
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSFM260N / FSFM261N / FSFM300N • Rev. 1.0.1 12
Page 13
FSFM260N / FSFM261N / FSFM300N — Green-Mode Farichild Power Switch (FPS™)
PCB Layout Guide
Due to the combined scheme, FPS shows better noise immunity than conventional PWM controller and MOSFET discrete solutions. Furthermore, internal drain current sense eliminates noise generation caused by a
sensing resistor. There are some recommendations for PCB layout to enhance noise immunity and suppress the noise inevitable in power-handling components.
There are typically two grounds in the conventional SMPS: power ground and signal ground. The power ground is the ground for primary input voltage and power, while the signal ground is ground for PWM controller. In FPS, those two grounds share the same pin, GND. Normally the separate grounds do not share the same trace and meet only at one point, the GND pin. More, wider patterns for both grounds are good for large currents by decreasing resistance.
Capacitors at the V possible to the corresponding pins to avoid noise from
the switching device. Sometimes Mylar® or ceramic capacitors with electrolytic for V
operation. The ground of these capacitors needs to connect to the signal ground not the power ground.
The cathode of the snubber diode should be close to the drain pin to minimize stray inductance. The Y-capacitor between primary and secondary should be directly connected to the power ground of DC link to maximize surge immunity.
Because the voltage range of feedback line is small, it is affected by the noise of the drain pin. Those traces should not draw across or close to the drain line.
In FSFM260/261/300, drain pins are the heat radiation pins, so wider PCB pattern is recommended to decrease the package temperature. Drain pins are also high voltage switching pins; however, too wide PCB pattern may deteriorate EMI immunity.
and FB pins should be as close as
CC
is better for smooth
CC
Figure 23. Recommended PCB Layout
Mylar® is a registered trademark of DuPont Teijin Films.
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSFM260N / FSFM261N / FSFM300N • Rev. 1.0.1 13
Page 14
Typical Application Circuit
FSFM260N / FSFM261N / FSFM300N — Green-Mode Farichild Power Switch (FPS™)
Application FPS™ Device
LCD Monitor
Power Supply
FSFM300N 85-265V
Input Voltage
Range
AC
Rated Output Power
30W
Output Voltage
(Maximum Current)
5.0V (2.0A) 14V (1.4A)
Features
! Average efficiency of 25%, 50%, 75%, and 100% load conditions is higher than 80% at universal input ! Low standby mode power consumption (<1W at 230V
input and 0.5W load)
AC
! Enhanced system reliability through various protection functions ! Internal soft-start (15ms)
Key Design Notes
! The delay time for overload protection is designed to be about 23ms with C105 of 33nF. If faster/slower triggering of
OLP is required, C105 can be changed to a smaller/larger value (e.g. 100nF for 70ms).
! The SMD-type 100nF capacitor must be placed as close as possible to V
sating noises and to improve surge immunity.
pin to avoid malfunction by abrupt pul-
CC
1. Schematic
R202
1.2k
C201
1000 F
25V
L201
5H
L202
5H
R203 18k
C204
1000 F
10V
C205 47nF
C202
1000 F
25V
R204
8k
R205
8k
14V, 1.4A
5V, 2A
BD101
2KBP06M
RT1 NTC 5D-9
T1
EER3016
C301
4.7nF Y2
IC301
FOD817C
10
6
MBRF1060
7
6
D202
C203
2200 F
10V
R201
1k
IC201
KA431
1
FSFM300N
V
STR
I
LIM
FB
GND
Drain
1
V
CC
C104
3.3nF 630V
6,7,8
R105 100
0.5W
2
ZD101
1N4745A
C106
100nF
D101
1N4007
C107 47 F
50V
D102
UF 4004
2
3
4
5
C105
33nF 100V
R103 51k
1W
5
4
3
R102 75k
C103 100 F
2
1
C102
150nF
275V
LF101
30mH
R101
1M
1W
C101
150nF
275V
400V
3
4
AC
R108
N.C
AC
F1
FUSE
250V
2A
Figure 24. Demonstration Circuit of FSFM300N
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSFM260N / FSFM261N / FSFM300N • Rev. 1.0.1 14
Page 15
2. Transformer
FSFM260N / FSFM261N / FSFM300N — Green-Mode Farichild Power Switch (FPS™)
Top
Np/2
Np/2
EER3016
1
2
3
4
N
a
5
10
N
14V
9
GND
8
N
5V
7
N
5V
6
Np/2
2
4 5
N
a
N
7
5V
N
8
5V
8
N
10
14V
2
Np/2
3
Bottom
Figure 25. Transformer Schematic Diagram
3. Winding Specification
Position No Pin (s→f) Wire Turns Winding Method
Bottom
To p
Np/2 3 → 20.25φ × 1 30 Two-Layer Solenoid Winding
Insulation: Polyester Tape t = 0.025mm, Three Layers
N
14V
10 → 8 0.4φ × 2(TIW) 5 Solenoid Winding
Insulation: Polyester Tape t = 0.025mm, Three Layers
N
5V
8 → 60.4φ × 3(TIW) 3 Solenoid Winding
Insulation: Polyester Tape t = 0.025mm, Three Layers
N
5V
7 → 60.4φ × 3(TIW) 3 Solenoid Winding
Insulation: Polyester Tape t = 0.025mm, Three Layers
N
a
7 → 6 0.15φ × 1 7 Center Solenoid Winding
Insulation: Polyester Tape t = 0.025mm, Three Layers
/2 2 → 1 0.25φ × 1 19 Center Solenoid Winding
N
p
Insulation: Polyester Tape t = 0.025mm, Two Layers
1
6
6
4. Electrical Characteristics
Pin Specification Remarks
Inductance 1 - 3 1.2mH ± 10% 67kHz, 1V
Leakage 1 - 3 15µH Maximum Short all other pins
5. Core & Bobbin
! Core: EER3016 (Ae=109.7mm ! Bobbin: EER3016
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSFM260N / FSFM261N / FSFM300N • Rev. 1.0.1 15
2
)
Page 16
6. Evaluation Board Part List
Part Value Note Part Value Note
Resistor Inductor
R101 1MΩ 1W L201 5µH 5A Rating
R102 75kΩ 1/2W L202 5µH 5A Rating
R103 51kΩ 1W Diode
R105 100Ω 1/4W D101 IN4007
R108 10kΩ 1/4W D102 UF4004 1A, 400V Ultrafast Rectifier
R201 1kΩ 1/4W ZD101 1N4745A
R202 1.2kΩ 1/4W D201 MBRF10H100 10A,100V Schottky Rectifier
R203 18kΩ 1/4W D202 MBRF1060 10A,60V Schottky Rectifier
R204 8kΩ 1/4W IC
R205 8kΩ 1/4W IC101 FSFM300N FPS™
Capacitor IC201 KA431 (TL431) Voltage Reference
C101 150nF/275V
C102 150nF/275V
AC
AC
Box Capacitor IC202 FOD817A Opto-Coupler
Box Capacitor Fuse
C103 100µF/400V Electrolytic Capacitor Fuse 2A/250V
C104 3.3nF/630V Film Capacitor NTC
C105 33nF/50V Ceramic Capacitor RT101 5D-9
C106 100nF/50V SMD (1206) Bridge Diode
C107 47µF/50V Electrolytic Capacitor BD101 2KBP06M2N257 Bridge Diode
C201 1000µF/25V
C202 1000µF/25V
C203 2200µF/10V
C204 1000µF/10V
Low-ESR Electrolytic
Capacitor
Low-ESR Electrolytic
Capacitor
Low-ESR Electrolytic
Capacitor
Low-ESR Electrolytic
Capacitor
LF101 34mH
Transf ormer
T1 EER3016 Ae=109.7mm
C205 47nF/50V Ceramic Capacitor
C301 4.7nF/1kV Ceramic Capacitor
1A, 1000V General-Purpose
Rectifier
1W 16V Zener Diode
(optional)
Line Filter
FSFM260N / FSFM261N / FSFM300N — Green-Mode Farichild Power Switch (FPS™)
2
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSFM260N / FSFM261N / FSFM300N • Rev. 1.0.1 16
Page 17
Package Dimensions
FSFM260N / FSFM261N / FSFM300N — Green-Mode Farichild Power Switch (FPS™)
9.83
9.00
6.67
6.096
8.255
7.61
3.60
3.00
3.683
3.20
0.356
0.20
5.08 MAX
0.33 MIN
(0.56)
2.54
0.56
0.355
1.65
1.27
7.62
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO
JEDEC MS-001 VARIATION BA
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
D) DIMENSIONS AND TOLERANC
ES PER
ASME Y14.5M-1994
E) DRAWING FILENAME AND REVSION: MKT-N08FREV2.
7.62
9.957
7.87
Figure 26. 8-Lead Dual Inline Package (DIP)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSFM260N / FSFM261N / FSFM300N • Rev. 1.0.1 17
.
Page 18
FSFM260N / FSFM261N / FSFM300N — Green-Mode Farichild Power Switch (FPS™)
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSFM260N / FSFM261N / FSFM300N • Rev. 1.0.1 18
Loading...