Datasheet fsbf5ch60b Datasheet

FSBF5CH60B

Smart Power Module

FSBF5CH60B Smart Power Module

June 2007

TM

Motion-SPM

Features

• UL Certified No.E209204(SPM27-JA package)

• 600V-5A 3-phase IGBT inverter bridge including control ICs
for gate driving and protection

• Easy PCB layout due to built in bootstrap diode

• Divided negative dc-link terminals for inverter current sensing
applications

• Single-grounded power supply due to built-in HVIC

• Isolation rating of 2500Vrms/min.

Applications

• AC 100V ~ 253V three-phase inverter drive for small power
ac motor drives

• Home appliances applications like air conditioner and wash­ing machine

Top View Bottom View

44mm

General Description

It is an advanced motion-smart power module (Motion-SPMTM)
that Fairchild has newly developed and designed to provide
very compact and high performance ac motor drives mainly tar­geting low-power inverter-driven application like air conditioner
and washing machine. It combines optimized circuit protection
and drive matched to low-loss IGBTs. System reliability is fur­ther enhanced by the integrated under-voltage lock-out and
short-circuit protection. The high speed built-in HVIC provides
opto-coupler-less single-supply IGBT gate driving capability that
further reduce the overall size of the inverter system design.
Each phase current of inverter can be monitored separately due
to the divided negative dc terminals.

26.8mm

Figure 1.

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FSBF5CH60B Rev. C

Integrated Power Functions

• 600V-5A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3)

Integrated Drive, Protection and System Control Functions

• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting

Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figures 10 and 11.

• For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC)

Control supply circuit under-voltage (UV) protection

• Fault signaling: Corresponding to UV (Low-side supply) and SC faults

• Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger input

Pin Configuration

Top View

FSBF5CH60B Smart Power Module

FSBF5CH60B Rev. C

Figure 2.

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Pin Descriptions

Pin Number Pin Name Pin Description

1V

CC(L)

2 COM Common Supply Ground
3IN
4IN
5IN
6V
7C
8C

9IN
10 V
11 V
12 V
13 IN
14 V
15 V
16 V
17 IN
18 V
19 V
20 V
21 N
22 N
23 N

(UL)
(VL)

(WL)

FO

FOD

SC

(UH)

CC(H)

B(U)
S(U)

(VH)

CC(H)

B(V)
S(V)
(WH)

CC(H)

B(W)
S(W)

U
V

W

24 U Output for U Phase
25 V Output for V Phase
26 W Output for W Phase
27 P Positive DC–Link Input

Low-side Common Bias Voltage for IC and IGBTs Driving

Signal Input for Low-side U Phase
Signal Input for Low-side V Phase
Signal Input for Low-side W Phase
Fault Output
Capacitor for Fault Output Duration Time Selection
Capacitor (Low-pass Filter) for Short-Current Detection Input
Signal Input for High-side U Phase
High-side Common Bias Voltage for IC and IGBTs Driving
High-side Bias Voltage for U Phase IGBT Driving
High-side Bias Voltage Ground for U Phase IGBT Driving
Signal Input for High-side V Phase
High-side Common Bias Voltage for IC and IGBTs Driving
High-side Bias Voltage for V Phase IGBT Driving
High-side Bias Voltage Ground for V Phase IGBT Driving
Signal Input for High-side W Phase
High-side Common Bias Voltage for IC and IGBTs Driving
High-side Bias Voltage for W Phase IGBT Driving
High-side Bias Voltage Ground for W Phase IGBT Driving
Negative DC–Link Input for U Phase
Negative DC–Link Input for V Phase
Negative DC–Link Input for W Phase

FSBF5CH60B Smart Power Module

FSBF5CH60B Rev. C

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Internal Equivalent Circuit and Input/Output Pins

FSBF5CH60B Smart Power Module

(19) V
(18) V

(17) IN
(20) V

(15) V

(14) V

(13) IN
(16) V

(11) V

(10) V

(9) IN
(12) V

(8) C
(7) C
(6) V

(5) IN
(4) IN
(3) IN

(2) COM
(1) V

(UH)

B(W)

CC(H)

S(W)

B(V)

CC(H)

(VH)

S(V)

B(U)

CC(H)

S(U)

SC

FOD

FO

CC(L)

(WH)

(WL)

(VL)

(UL)

VB
VCC

COM
IN

VB
VCC

COM

IN

VB
VCC

COM
IN

C(SC)
C(FOD)
VFO

IN(WL)
IN(VL)
IN(UL)

COM
VCC

OUT

VS

OUT

VS

OUT

VS

OUT(WL)

OUT(VL)

OUT(UL)

V

P (27)

W (26)

V (25)

U (24)

N

(23)

W

(22)

N

V

SL

NU (21)

Note:

1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT and one control IC. It has gate drive and protection functions.

2. Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals.

3. Inverter high-side is composed of three IGBTs, freewheeling diodes and three drive ICs for each IGBT.

Figure 3.

FSBF5CH60B Rev. C

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FSBF5CH60B Smart Power Module

Absolute Maximum Ratings (T

= 25°C, Unless Otherwise Specified)

J

Inverter Part

Symbol Parameter Conditions Rating Units

V

PN

V

PN(Surge)

V

CES

± I

± I

CP

P

C

T

Note:

1. The maximum junction temperature rating of the power chips integrated within the SPM is 150°C(@T

Supply Voltage Applied between P- NU, NV, N
Supply Voltage (Surge) Applied between P- NU, NV, N

W
W

Collector-emitter Voltage 600 V
Each IGBT Collector Current TC = 25°C 5 A

C

Each IGBT Collector Current (Peak) TC = 25°C, Under 1ms Pulse Width 10 A
Collector Dissipation TC = 25°C per One Chip 19 W
Operating Junction Temperature (Note 1) -40 ~ 150 °C

J

≤ 125°C).

C

450 V
500 V

Control Part

Symbol Parameter Conditions Rating Units

V

CC

V

BS

V

IN

V

FO

I

FO

V

SC

T

J(Driver IC)

Control Supply Voltage Applied between V
High-side Control Bias

Voltage

Applied between V
V

- V

B(W)

S(W)

Input Signal Voltage Applied between IN

IN

, IN

(VL)

, IN

(UL)

(WL)

CC(H)
B(U)

(UH)

- COM

- V

, V

- COM 20 V

CC(L)

, V

- V

S(U)

, IN

(VH)

B(V)

, IN

S(V)

(WH)

,

,

-0.3~17 V

20 V

Fault Output Supply Voltage Applied between VFO - COM -0.3~VCC+0.3 V
Fault Output Current Sink Current at VFO Pin 5 mA
Current Sensing Input Voltage Applied between CSC - COM -0 .3~VCC+0.3 V
Operating Junction Temperature -40 ~ 150 °C

Bootstrap Diode Part

Symbol Parameter Conditions Rating Units

V

RRM

I

F

I

FP

T

Maixmum Repetitive Reverse Voltage 600 V
Forward Current TC = 25°C 0.5 A
Forward Current (Peak) TC = 25°C, Under 1ms Pulse Width 2 A
Operating Junction Temperature -40 ~ 150 °C

J

Total System

Symbol Parameter Conditions Rating Units

V

PN(PROT)

T

C

T

STG

V

ISO

Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)

VCC = VBS = 13.5 ~ 16.5V
T

= 150°C, Non-repetitive, less than 2μs

J

400 V

Module Case Operation Temperature -40°C≤ TJ ≤ 150°C, See Figure 2 -40 ~ 125 °C
Storage Temperature -40 ~ 150 °C
Isolation Voltage 60Hz, Sinusoidal, AC 1 minute, Connection

2500 V

Pins to heat sink plate

Thermal Resistance

Symbol Parameter Conditions Min. Typ. Max. Units

R

th(j-c)Q

R

th(j-c)F

Note:

2. For the measurement point of case temperature(TC), please refer to Figure 2.

Junction to Case Thermal
Resistance

Inverter IGBT part (per 1/6 module) - - 6.3 °C/W
Inverter FWD part (per 1/6 module) - - 6.5 °C/W

rms

FSBF5CH60B Rev. C

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FSBF5CH60B Smart Power Module

Electrical Characteristics (T

= 25°C, Unless Otherwise Specified)

J

Inverter Part

Symbol Parameter Conditions Min. Typ. Max. Units

V

CE(SAT)

V

F

HS t

t

C(ON)

t

t

C(OFF)

LS t

t

C(ON)

t

t

C(OFF)

I

CES

Note:

3. tON and t

OFF

For the detailed information, please see Figure 4.

Collector-Emitter Saturation
Voltage

VCC = VBS = 15V
V

= 5V

IN

= 5A, TJ = 25°C - - 2.0 V

I

C

FWD Forward Voltage VIN = 0V IF = 5A, TJ = 25°C - - 2.1 V
Switching Times VPN = 300V, VCC = VBS = 15V

ON

OFF

I

= 5A

C

V

= 0V ↔ 5V, Inductive Load

IN

(Note 3)

-0.75- μs

-0.15- μs

-0.60- μs

-0.20- μs

t

rr

ON

OFF

VPN = 300V, VCC = VBS = 15V
I

= 5A

C

V

= 0V ↔ 5V, Inductive Load

IN

(Note 3)

-0.10- μs

-0.45- μs

-0.20- μs

-0.60- μs

-0.20- μs

t

rr

Collector-Emitter

VCE = V

Leakage Current

include the propagation delay time of the internal drive IC. t

CES

C(ON)

and t

are the switching time of IGBT itself under the given gate driving condition internally.

C(OFF)

-0.10- μs

--1mA

Control Part

Symbol Parameter Conditions Min. Typ. Max. Units

I

QCCL

I

QCCH

I

QBS

V

FOH

V

V

SC(ref)

TSD Over-temperature protec-

ΔTSD Over-temperature protec-

UV
UV

UV
UV

t

FOD

V

IN(ON)

V

IN(OFF)

Note:

4. Short-circuit current protection is functioning only at the low-sides.

5. The fault-out pulse width t

Quiescent VCC Supply
Current

Quiescent VBS Supply
Current

VCC = 15V
IN

(UL, VL, WL)

VCC = 15V
IN

(UH, VH, WH)

VBS = 15V
IN

(UH, VH, WH)

= 0V

= 0V

= 0V

- COM - - 23 mA

V

CC(L)

- COM - - 600 μA

V

CC(H)

- V

, V

-V

,

V
V

B(U)
B(W)

- V

S(U)

S(W)

B(V)

S(V)

- - 500 μA

Fault Output Voltage VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up 4.5 - - V

FOL

VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up - - 0.8 V

Short Circuit Trip Level VCC = 15V (Note 4) 0.45 0.5 0.55 V

Temperature at LVIC - 160 - °C

tion

Temperature at LVIC - 5 - °C

tion hysterisis
Supply Circuit Under-

CCD

Voltage Protection

CCR
BSD
BSR

Fault-out Pulse Width C
ON Threshold Voltage Applied between IN
OFF Threshold Voltage - - 0.8 V

depends on the capacitance value of C

FOD

Detection Level 10.7 11.9 13.0 V
Reset Level 11.2 12.4 13.4 V
Detection Level 10 11 12 V
Reset Level 10.5 11.5 12.5 V

= 33nF (Note 5) 1.0 1.8 - ms

FOD

, IN

, IN

, IN

,

(UH)

(VH)

(WH)

IN

, IN

(VL)

- COM

(WL)

according to the following approximate equation : C

FOD

(UL)

2.8 - - V

= 18.3 x 10-6 x t

FOD

FOD

[F]

FSBF5CH60B Rev. C

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100% I

t

rr

C

100% I

FSBF5CH60B Smart Power Module

C

V

IN

t

ON

V

IN(ON)

Switching Loss (Typical)

V

CE

10% I

C

t

90% I

C(ON)

10% V

C

I

C

CE

V

(a) turn -o n

Figure 4. Switching Time Definition

IN(OFF)

t

C(OFF)

V

0

10% I

CE

C

I

C

V

IN

t

OFF

10% V

CE

(b) turn -o ff

SWITCHING LOSS(ON) VS. COLLECTOR CURRENT

300

VCE=300V

270

=15V

V

CC

240

V

=5V

[uJ]

IN

TJ=25℃
TJ=150℃

90

60

30

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

SWITCHING LOSS, E

210

SW(ON)

180

150

120

COLLECTOR CURRENT, Ic [AMP ERES ]

Figure 5. Switching Loss Characteristics

SWITCHING LOSS(OFF) VS. COLLECTOR CURRENT

200

VCE=300V

180

=15V

V

CC

160

[uJ]

V

=5V

IN

140

SW(OFF)

120

100

SWITCHING LOSS, E

TJ=25℃
TJ=150℃

80

60

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

COLLECTOR CURRENT, Ic [AMP ERES ]

FSBF5CH60B Rev. C

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Bootstrap Diode Part

Symbol Parameter Conditions Min. Typ. Max. Units

V

F

t

rr

Forward Voltage IF = 0.1A, TC = 25°C - 2.5 - V
Reverse Recovery Time IF = 0.1A, TC = 25°C - 80 - ns

FSBF5CH60B Smart Power Module

1.0

0.9

0.8

0.7

0.6

0.5

[A]

F

I

0.4

0.3

0.2

0.1

0.0

Note:

6. Built in bootstrap diode includes around 15Ω resistance characteristic.

Built in Bootstra p Diode VF-IF Characteristic

0123456789101112131415

Figure 6. Built in Bootstrap Diode Characteristics

Recommended Operating Conditions

TC=25℃

VF [V]

Symbol Parameter Conditions

V
V
V

dV

dV

t

dead

f

PWM

V

FSBF5CH60B Rev. C

Supply Voltage Applied between P - NU, NV, N

PN

Control Supply Voltage Applied between V

CC

High-side Bias Voltage Applied between V

BS

/dt,

Control supply variation -1 - 1 V/

CC

/dt

BS

Blanking Time for Preventing

- V

V

B(W)

S(W)

For Each Input Signal 1.5 - - μs

Arm-short
PWM Input Signal -40°C ≤ TC ≤ 125°C, -40°C ≤ TJ ≤ 150°C - - 20 kHz
Voltage for Current Sensing Applied between NU, NV, N

SEN

(Including surge voltage)

Value

Units

Min. Typ. Max.

W

, V

CC(H)
B(U)

- V

- COM 13.5 15 16.5 V

CC(L)

, V

- V

S(U)

W

B(V)

- COM

S(V)

,

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- 300 400 V

13.0 15 18.5 V

μs

-4 4 V

Mechanical Characteristics and Ratings

FSBF5CH60B Smart Power Module

Parameter Conditions

Mounting Torque Mounting Screw: - M3 Recommended 0.62N•m 0.51 0.62 1.00 N•m
Device Flatness Note Figure 7 0 - +120
Weight - 15.4 - g

( + )

( + )

Min. Typ. Max.

( + )

( + )

Limits

Units

Figure 7. Flatness Measurement Position

Package Marking and Ordering Information

μm

Device Marking Device Pack age Reel Size Tape Width Quantity

FSBF5CH60B FSBF5CH60B SPM27-JA - - 10

FSBF5CH60B Rev. C

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Time Charts of SPMs Protective Function

Input Signal

FSBF5CH60B Smart Power Module

Protection

Circuit State

Control

UV

RESET

CCR

a1

Supply Voltage

Output Current

Fault Output Signal

a1 : Control supply voltage rises: After the voltage rises UV
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under voltage detection (UV
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts.
a6 : Under voltage reset (UV
a7 : Normal operation: IGBT ON and carrying current.

CCR

CCD

).

).

Figure 8. Under-Voltage Protection (Low-side)

SET RESET

UV

CCD

a3

a2

, the circuits start to operate when next input is applied.

CCR

a4

a5

a6

a7

Input Signal

Protection

Circuit State

Control

Supply Voltage

UV

BSR

RESET

b1

b2

SET RESET

UV

BSD

b3

b4

Output Current

High-level (no fault output)

Fault Output Signal

b1 : Control supply voltage rises: After the voltage reaches UV
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under voltage detection (UV
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under voltage reset (UV
b6 : Normal operation: IGBT ON and carrying current

BSR

BSD

)

).

, the circuits start to operate when next input is applied.

BSR

Figure 9. Under-Voltage Protection (High-side)

b5

b6

FSBF5CH60B Rev. C

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FSBF5CH60B Smart Power Module

Lower arms

control input

Protection

circuit state

Internal IGBT

Gate-Emitter Voltage

Output Current

Sensing Voltage

of the shunt

resistance

Fault Output Signal

c1

SET

c2

SC

c6

c4

c3

SC Reference Voltage

CR circuit time
constant delay

c5

c7

RESET

c8

(with the external shunt resistance and CR connection)
c1 : Normal operation: IGBT ON and carrying current.
c2 : Short circuit current detection (SC trigger).
c3 : Hard IGBT gate interrupt.
c4 : IGBT turns OFF.
c5 : Fault output timer operation starts: The pulse width of the fault output signal is set by the external capacitor C
c6 : Input “L” : IGBT OFF state.
c7 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON.
c8 : IGBT OFF state

Figure 10. Short-Circuit Current Protection (Low-side Operation only)

FO

.

FSBF5CH60B Rev. C

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5V-Line

FSBF5CH60B Smart Power Module

R

=4.7㏀

PF

SPM

100Ω

,,

IN

(UH)IN(VH)

IN

(WH)

100Ω

CPU

1nF

100Ω

CPF= 1nF

1nF 1nF

IN

(UL)IN(VL)

V

FO

IN

(WL)

,,

COM

Note:

1) RC coupling at each input might change depending on the PW M contro l scheme use d in the ap plication an d the wiri ng impedan ce of the applica tion’ s printed cir cuit board. The
SPM input signal section integrates 5k
minal.

2) The logic input is compatible with standard CMOS or LSTTL outputs.

Ω (typ.) pull-down resistor . Ther efore, w hen using a n exter nal filtering resistor, please pay attention to the signal volt age drop at inpu t ter-

Figure 11. Recommended CPU I/O Interface Circuit

These Values depend on PWM Control Algorithm

One-Leg Diagram of SPM

Vcc

VB

IN

15V-Line

22uF

0.1uF

1000uF 1uF

Note:

1) The ceramic capacitor placed between VCC-COM should be over 1uF and mounted as close to the pins of the SPM as possible.

COM

Vcc

IN

COM

HO

VS

OUT

V

SL

P

Figure 12. Recommended Bootstrap Operation Circuit and Parameters

Inverter

Output

N

FSBF5CH60B Rev. C

12 www.fairchildsemi.com

C
P
U

R

Gating WH

Gating VH

Gating UH

Fault

Gating WL

Gating VL
Gating UL

S

R

S

R

S

R

S

R

S

R

S

R

S

C

C

BPF

PS

Input Signal for

Short-Circuit Protection

CPSC

FSBF5CH60B Smart Power Module

15V line

5V line

C

C

PS

C

PS

C

PS

R

PF

C

PF

PS

BS

CBSC

C

BS

R

F

C

SC

C

C

SPC15

SP15

(19) V

B(W)

(18) V

CC(H)

C

(17) IN

BSC

BSC

C

BSC

(WH)

(20) V

S(W)

(15) V

B(V)

(14) V

CC(H)

(13) IN

(VH)

(16) V

S(V)

(11) V

B(U)

(10) V

CC(H)

(9) IN

(UH)

(12) V

S(U)

(8) C

SC

(7) C

FOD

C

(6) V

FOD

FO

(5) IN

(WL)

(4) IN

(VL)

(3) IN

(UL)

(2) COM
(1) V

CC(L)

VB

VCC
COM
IN

VB

VCC

COM

IN

VB

VCC
COM

IN

C(SC)
C(FOD)
VFO

IN(W L)
IN(VL)
IN(UL)

COM

VCC

OUT

VS

OUT

VS

OUT

VS

OUT(WL)

OUT(VL)

OUT(UL)

V

SL

W-Phase Current

V-Phase Current
U-Phase Current

P (27)

W (26)

V (25)

U (24)

N

W

N

V

NU (21)

R

FW

R

FV

R

M

C

Vdc

DCS

R

(23)

(22)

FU

SW

R

SV

R

SU

C

FW

C

C

FU

FV

Note:

1) To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm)

2) By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible.
output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately 4.7kΩ resistance. Please refer to Figure 1 1.

3) V

FO

4) C

of around 7 times larger than bootstrap capacitor CBS is recommended.

SP15

5) V

output pulse width should be determined by connecting an external capacitor(C

FO

(typ.)) Please refer to the note 5 for calculation method.

6) Input signal is High-Active type. There is a 5k

input signal oscillation. R

time constant should be selected in the range 50~150ns. C

SCPS

7) To prevent errors of the protection function, the wiring around R

8) In the short-circuit protection circuit, please select the R

Ω resistor inside the IC to pull down each input signal line to GND. RC coupling circuits should be adopted for the prevention of

and CSC should be as short as possible.

F

time constant in the range 1.5~2μs.

FCSC

) between C

FOD

should not be less than 1nF.(Recommended R

PS

(pin7) and COM(pin2). (Example : if C

FOD

= 33 nF, then tFO = 1.8ms

FOD

=100Ω , CPS=1nF)

S

9) Each capacitor should be mounted as close to the pins of th e SPM as possible.

10) To prevent surge destruction, the wiring betw een the sm oothin g capacitor and the P &GND pins should be as shor t as possi ble. The use of a high frequency non-inductive

capacitor of around 0.1~0.22

μF between the P&GND pins is recommended.

11) Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.

should be over 1μF and mounted as close to the pins of the SPM as possible.

12) C

SPC15

Figure 13. Typical Application Circuit

FSBF5CH60B Rev. C

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Detailed Package Outline Drawings

FSBF5CH60B Smart Power Module

FSBF5CH60B Rev. C

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Detailed Package Outline Drawings (Continued)

FSBF5CH60B Smart Power Module

FSBF5CH60B Rev. C

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Detailed Package Outline Drawings (Continued)

FSBF5CH60B Smart Power Module

FSBF5CH60B Rev. C

16 www.fairchildsemi.com

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®

ACEx
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
FACT Quiet Series™
FACT
FAST

®

®
®

FastvCore™
FPS™

®

FRFET
Global Power ResourceSM
Green FPS™

Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
PDP-SPM™
Power220
Power247

®

®

®
®

POWEREDGE
Power-SPM™
PowerTrench
Programmable Active Droop™

®

QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™

®

SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6

®

®

SuperSOT™-8
SyncFET™
The Power Franchise

™

TinyBoost™
TinyBuck™
TinyLogic

®

®

TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
μSerDes™

®

UHC
UniFET™
VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use

2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

provided in the labeling, can be reasonably expected to
result in a significant injury of the user.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data; supplementary data will be

published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor

reserves the right to make changes at any time without notice to improve
design.

Obsolete Not In Production This datasheet contains specifications on a product that has been

discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.

Rev. I29

© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com