Page 1
FSB749
FSB749
C
E
B
SuperSOT
TM
-3
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous. Sourced from Process PC.
Absolute Maximum Ratings* T
ParameterSymbol
V
CEO
V
CBO
V
EBO
I
C
T
J, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
Characteristic
P
R
Symbol
D
θJA
A = 25°C unless otherwise noted
A = 25°C unless otherwise noted
FSB749
Max
FSB749
Units
V25Collector-Emitter Voltage
V35Collector-Base Voltage
V5Emitter-Base Voltage
A3Collector Current - Continuous
°C-55 to +150Operating and Storage Junction Temperature Range
Units
mW500Total Device Dissipation
°C/W250Thermal Resistance, Junction to Ambient
1999 Fairchild Semiconductor Corporation
fsb749.lwpPrPC revA
Page 2
SMALL SIGNAL CHARACTERISTICS
ON
CHARACTERISTICS
OFF CHARACTERISTICS
PNP Low Saturation Transistor
FSB749
(continued)
Electrical Characteristics T
BV
BV
BV
I
CBO
I
EBO
h
FE
V
CE(sat)
CEO
CBO
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
*
DC Current Gain
Collector-Emitter Saturation Voltage
A = 25°C unless otherwise noted
= 10 mA
I
C
= 100 µA
I
C
= 100 µA
I
E
V
CB
V
CB
V
EB
= 50 mA, VCE = 2 V
I
C
I
= 1 A, VCE = 2 V
C
I
= 2 A, VCE = 2 V
C
I
= 6 A, VCE = 2 V
C
= 1 A, IB = 100 mA
I
C
I
= 3 A, IB = 300 mA
C
= 30 V
= 30 V, TA=100°C
= 4V
70
100
75
15
100
10
100
300
600
UnitsMaxMinTest ConditionsParameterSymbol
V25
V35
V5
nA
uA
nA
-
mV300
V
BE(sat)
V
BE(on)
C
obo
f
T
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Transition Frequency
I
= 1 A, IB = 100 mA
C
= 1 A, VCE = 2 V
I
C
= 10 V, IE = 0, f = 1MHz
V
CB
= 100 mA,VCE = 5 V, f=100MHz
I
C
V1.25
V1
pF100
- 100
1999 Fairchild Semiconductor Corporation
fsb749.lwpPrPC revA
Page 3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOL T™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna
TM
TM
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART ST ART™
ST AR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
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VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H3
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