Datasheet FSB560 Datasheet (Fairchild)

Page 1

FSB560/FSB560A

NPN Low Saturation Transistor

Features

• These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous.

FSB560/FSB560A — NPN Low Saturation Transistor

May 2009

Absolute Maximum Ratings* T

=25°C unless otherwise noted

Symbol Parameter Ratings Units

CEO

CBO

EBO

TJ, T

STG

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150°C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics T

Collector-Emitter Voltage 60 V

Collector-Base Voltage 80 V

Emitter-Base Voltage 5 V

Collector Current - Continuous 2 A

Operating and Storage Junction Temperature Range - 55 to +150 °C

=25°C unless otherwise noted

Max.

Symbol Parameter

Units

FSB560 FSB560A

θJA

FSB560/FSB560A Rev. B2 1

Total Device Dissipation 500 mW

Thermal Resistance, Junction to Ambient 250 °C/W

Page 2

FSB560/FSB560A — NPN Low Saturation Transistor

Electrical Characteristics T

=25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Max. Units

Off Characteristics

CEO

CBO

EBO

CBO

EBO

On Characteristics*

VCE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 100mA

VBE(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 100mA 1.25 V

VBE(on) Base-Emitter On Voltage IC = 1A, VCE = 2V 1 V

Collector-Emitter Breakdown Voltage IC = 10mA 60 V

Collector-Base Breakdown Voltage IC = 100µA 80 V

Emitter-Base Breakdown Voltage IE = 100µA 5 V

Collector Cutoff Current VCB = 30V

VCB = 30V, TA = 100°C

10010nA

µA

Emitter Cutoff Current VEB = 4V 100 nA

DC Current Gain IC = 100mA, VCE = 2V

IC = 500mA, VCE = 2V FSB560 FSB560A IC = 1A, VCE = 2V IC = 2A, VCE = 2V

IC = 2A, IB = 200mA FSB560 FSB560A

70 100 250

300 550

300 350 300

mV mV mV

Small Signal Characteristics

obo

Output Capacitance VCB = 10V, IE = 0, f = 1MHz 30 pF

Transition Frequency IC = 100mA, VCE = 5V, f = 100MHz 75 MHz

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

FSB560/FSB560A Rev. B2 2

Page 3

Typical Performance Characteristics

Base-Emitter Saturation

Voltage vs Collector Current

0.001 0.01 0.1 1 10

0.2

0.4

0.6

0.8

1.2

1.4

I - COLLECTOR CURRENT (A)

V -BASE-EMITTER SATURATION VOLTAGE(V)

ESAT

25 °C

- 40 °C

125 °C

β = 10

Base-Emitter On Voltage vs.

Collector Current

0.0001 0.001 0.01 0.1 1 10

0.2

0.4

0.6

0.8

1.2

1.4

I - COLLECTOR CURRENT (A)

V - BASE-EMITTER ON VOLTAGE (V)

BEON

25 °C

- 40 °C

125 °C

V = 2.0V

Collector-Emitter Saturation Voltage vs Collector Current

0.001 0.01 0.1 1 10

0.2

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

V - COLLECTOR-EMITTER VOLTAGE (V)

CESAT

- 40°C

25°C

125°C

β = 10

(mA)

Input/Output Capacitance vs.

Reverse Bias Voltage

0.1 0.2 0.5 1 2 5 10 20 50 100

100

150

200

250

300

350

400

450

V - COLLECTOR VOLTAGE (V)

CAPACITANCE (pf)

f = 1.0 MHz

ibo

obo

0.001 0.010 0.100 1.000 10.000

100

200

300

400

FSB560

-40oC

VCE = 2 V

TA=150oC

25oC

- DC CURRENT GAIN

IC- COLLECTOR CURRENT [A]

0.001 0.010 0.100 1.000 10.000

100

200

300

400

500

600

700

FSB560A

-40oC

VCE = 2 V

TA=125oC

25oC

- DC CURRENT GAIN

IC- COLLECTOR CURRENT [A]

FSB560/FSB560A — NPN Low Saturation Transistor

Figure 1. Base-Emitter Saturation Voltage

vs Collector Current

Figure 3. Collector-Emitter Saturation Voltage

vs Collector Current

Figure 2. Base-Emitter On Voltage

vs Collector Current

Figure 4. Input/Output Capacitance

vs Reverse Bias Voltage

FSB560/FSB560A Rev. B2 3

Figure 5. Current Gain vs Collector Current Figure 6. Current Gain vs Collector Current

Page 4

Physical Dimensions

SuperSOT-23

FSB560/FSB560A — NPN Low Saturation Transistor

FSB560/FSB560A Rev. B2 4

Page 5

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

Auto-SPM¥

Build it Now¥

CorePLUS¥

CorePOWER¥

CROSSVOLT¥

CTL™ Current Transfer Logic™ EcoSPARK

EfficentMax™ EZSWITCH™*

™*

Fairchild

Fairchild Semiconductor

FACT Quiet Series™ FACT

FAST

FastvCore¥

FETBench¥

FlashWriter

FPS¥

F-PFS¥

FRFET

Global Power Resource

Green FPS¥

Green FPS¥ e-Series¥

Gmax™

GTO¥

IntelliMAX¥

ISOPLANAR¥

MegaBuck™

MICROCOUPLER¥

MicroFET¥

MicroPak¥

MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC

OPTOPLANAR

PDP SPM™

Power-SPM¥

PowerTrench

PowerXS™

Programmable Active Droop¥

QFET

QS¥

Quiet Series¥

RapidConfigure¥

™ Saving our world, 1mW/W/kW at a time™ SmartMax™

SMART START¥

SPM

STEALTH™

SuperFET¥

SuperSOT¥-3

SuperSOT¥-6

SuperSOT¥-8

SupreMOS™ SyncFET™ Sync-Lock™

The Power Franchise

TinyBoost¥

TinyBuck¥

TinyLogic

TINYOPTO¥

TinyPower¥

TinyPWM¥

TinyWire¥

TriFault Detect¥

TRUECURRENT¥*

PSerDes¥

UHC

Ultra FRFET¥

UniFET¥

VCX¥

VisualMax¥

XS™

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First Production

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Obsolete Not In Production

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I40