Datasheet FS6128-01 Datasheet (AMIS)

AMERICAN MICROSYSTEMS, INC.

April 2000

FS6128-01

FS6128-01FS6128-01

PLL Clock Generator IC with VCXO

PLL Clock Generator IC with VCXOPLL Clock Generator IC with VCXO

1.0 Features

• Phase-locked loop (PLL) device synthesizes output

clock frequency from crystal oscillator or external reference clock

• On-chip tunable voltage-controlled crystal oscillator

(VCXO) allows precise system frequency tuning

• Typically used for generation of MPEG-2 decoder

clock

• 3.3V supply voltage

• Small circuit board footprint (8-pin 0.150″ SOIC)

• Custom frequency selections available - contact your

local AMI Sales Representative for more information

Figure 1: Pin Configuration

XIN

VDD

XTUNE

VSS

1 8

2

3

4

FS6128

7

6

5

XOUT

VSS

n/c

CLK

2.0 Description

The FS6128 is a monolithic CMOS clock generator IC designed to minim ize cost a nd com ponen t coun t i n d igital video/audio systems.

At the core of the FS6128 is circu itry that implements a voltage-controlled crystal oscillator when an external resonator (nominally 13.5MHz) is attached. The VCXO allows device frequencies to be precisely adjusted for use in systems that have frequency matching requirements, such as digital satellite receivers.

A high-resolution ph ase-locked loop gener ates an output clock (CLK) through a pos t-divider. T he CLK f requenc y is ratiometrically derived from the VCXO frequency. The locking of the CLK frequency to other system reference frequencies can el iminate unpredicta ble artifacts in video systems and reduce electromagnetic interference (EMI) due to frequency harmonic stacking.

Table 1: Crystal / Output Frequencies

DEVICE f

FS6128-01 13.5 27 0-2 V

NOTE: Contact AMI for custom PLL frequencies

(MHz) CLK (MHz) XTUNE Range

XIN

8-pin (0.150″) SOIC

Figure 2: Block Diagram

XIN

XOUT

XTUNE

VCXO

PLL

DIVIDER

FS6128

CLK

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FS6128-01

FS6128-01FS6128-01

PLL Clock Generator IC with VCXO

PLL Clock Generator IC with VCXOPLL Clock Generator IC with VCXO

AMERICAN MICROSYSTEMS, INC.

April 2000

Table 2: Pin Descriptions

Key: AI = Analog Input; AO = Analog Output; DI = Digital Input; DIU = Input with Internal Pull-Up; DID = Input with Internal Pull-Down; DIO = Digital Input/Output; DI-3 = Three-Level Digital Input, DO = Digital Output; P = Power/Ground; # = Active Low pin

PIN TYPE NAME DESCRIPTION

1 AI XIN VCXO Feedback 2 P VDD Power Supply (+3.3V) 3 AI XTUNE VCXO Tune 4 P VSS Ground 5 DO CLK Clock Output 6 - n/c No Connection 7 DO VSS Ground 8 AO XOUT VCXO Drive

3.0 Functional Block Description

3.1 Phase-Locked Loop (PLL)

The on-chip PLL is a standard frequency- and phaselocked loop architecture. The PLL multiplies the r ef er ence oscillator to the des ired frequency by a ratio of integers. The frequency m ultiplication is exact with a zero synthesis error.

3.2 Voltage-Controlled Crystal Oscillator (VCXO)

The VCXO provides a tunab le, low-jitter frequenc y reference for the rest of the FS6128 system components. Loading capacitance for the crystal is internal to the FS6128. No external components (other than the resonator itself) are required for operation of the VCXO.

Continuous fine-tuning of the VCXO f requency is accom plished by varying the voltage on the XTUNE pin. The value of this voltage controls the effective capacitance presented by the VCXO to the crystal.

When using a crystal with a VCXO, it is im portant th at the crystal load capacitance (as specified in Table 4: Operating Conditions be m atched to the load capacita nce as presented by the VCXO. The crystal must be specified with the correct load c apacitance to obtai n the maximum tuning range.

The oscillator operates t he crystal resonat or in the parallel-resonant m ode. Crystal warpin g, or the “p ulling” of the crystal oscillation f requency, is accomplished by al tering the effective load c apacitance presented t o the crystal b y the oscillator circuit. T he actual amount that changin g the load capacitance alters the oscillator frequency will be dependent on the charac teristics of the c rystal as well as the oscillator circuit itself.

Specifically, the m otional capac itance of the c rystal (usually referred to by cr ystal manuf acturers as C capacitance of the c rystal (C (C

) of the oscillator det ermine the warping capabilit y of

L

the crystal in the oscillator circuit. A simple formula to obtain the warping capability of a

crystal oscillator is:

)(

=∆

ppmf

2

where CL1 and CL2 are the two extremes of the applied load capacitance.

EXAMPLE: A crystal with the following parameters is used. With C =35pF, the coarse tuning range is

= 0.02pF, C0 = 5pF, CL1 = 13pF, and C

1

()

.

f 305

=∆

()()

), and the load capac itance

0

()

CCC

LL

121

()()

1335020

6

×−×

10

≈

1353552

+×+×

×−×

10

+×+×

ppm

1

CCCC

), the static

6

LL

1020

.

L2

ISO9001

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FS6128-01

FS6128-01FS6128-01

AMERICAN MICROSYSTEMS, INC.

PLL Clock Generator IC with VCXO

PLL Clock Generator IC with VCXOPLL Clock Generator IC with VCXO

April 2000

4.0 Electrical Specifications

Table 3: Absolute Maximum Ratings

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These conditions represent a stress rating only, and functional operation of the device at these or any other conditions above the operational limits noted in this specification is not implied. Exposure to maximum rating conditions for extended conditions may affect device performance, functionality, and reliability.

PARAMETER SYMBOL MIN. MAX. UNITS

Supply Voltage (VSS = ground) V Input Voltage, dc V Output Voltage, dc V Input Clamp Current, dc (VI < 0 or VI > VDD)I Output Clamp Current, dc (VI < 0 or VI > VDD)I Storage Temperature Range (non-condensing) T Ambient Temperature Range, Under Bias T Junction Temperature T Lead Temperature (soldering, 10s) 260 °C Input Static Discharge Voltage Protection (MIL-STD 883E, Method 3015.7) 2 kV

DD

I

O

IK

OK

S

A

J

VSS-0.5 7 V VSS-0.5 VDD+0.5 V VSS-0.5 VDD+0.5 V

-50 50 mA

-65 150 °C

-55 125 °C 125 °C

CAUTION: ELECTROSTATIC SENSITIVE DEVICE

Permanent damage resulting in a loss of functionality or performance may occur if this device is subject ed to a high-energy electrostatic discharge.

Table 4: Operating Conditions

PARAMETER SYMBOL CONDITIONS/DESCRIPTION MIN. TYP. MAX. UNITS

Supply Voltage V Ambient Operating Temperature Range T Crystal Resonator Frequency f Crystal Resonator Motional Capacitance C Crystal Loading Capacitance C

DD

XTAL

1(xtal)

L(xtal)

3.3V ± 10% 3.0 3.3 3.6 V

A

Fundamental Mode 5 13.5 18 MHz AT cut 25 fF AT cut 20 pF

070°C

ISO9001

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FS6128-01

FS6128-01FS6128-01

PLL Clock Generator IC with VCXO

PLL Clock Generator IC with VCXOPLL Clock Generator IC with VCXO

AMERICAN MICROSYSTEMS, INC.

April 2000

Table 5: DC Electrical Specifications

Unless otherwise stated, VDD = 3.3V ± 10%, no load on any output, and ambient temperature range TA = 0°C to 70°C. Parameters denoted with an asterisk ( * ) represent nominal characterization data and are not production tested to any specific limits. Where given, MIN and MAX characterization data are ± 3σ from typical. Negative currents indicate current flows out of the device.

PARAMETER SYMBOL CONDITIONS/DESCRIPTION MIN. TYP. MAX. UNITS

Overall

Supply Current, Dynamic, with Loaded Outputs

Supply Current, Static I

Voltage Controlled Crystal Oscillator

Crystal Loading Capacitance C Crystal Resonator Motional Capacitance C

VCXO Tuning Range VCXO Tuning Characteristic Crystal Drive Level

Clock Output (CLK)

High-Level Output Source Current * I Low-Level Output Sink Current * I

Output Impedance *

Short Circuit Source Current * I Short Circuit Sink Current * I

I

DD

L(xtal)

1(xtal)

OH

OL

z

OH

z

OL

OSH

OSL

f

= 13.5MHz; CL = 10pF, VDD = 3.6V 30 mA

XTAL

XIN = 0V, VDD = 3.6V 3 mA

As seen by a crystal connected to XIN and XOUT (@ V

AT cut 25 fF

f

= 13.5MHz; C

XTAL

Note: positive change of XTUNE = positive change of VCXO frequency

R

=20Ω; CL = 20pF

XTAL

VO = 2.0V -40 mA VO = 0.4V 17 mA VO = 0.1VDD; output driving high 25 VO = 0.1VDD; output driving low 25 VO = 0V; shorted for 30s, max. -55 mA VO = 3.3V; shorted for 30s, max. 55 mA

XTUNE

= 1V)

L(xtal)

= 20pF; C

1(xtal)

= 25fF

20 pF

300 ppm 150 ppm/V 200 uW

Ω

ISO9001

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FS6128-01

FS6128-01FS6128-01

AMERICAN MICROSYSTEMS, INC.

PLL Clock Generator IC with VCXO

PLL Clock Generator IC with VCXOPLL Clock Generator IC with VCXO

April 2000

Table 6: AC Timing Specifications

Unless otherwise stated, VDD = 3.3V ± 10%, no load on any output, and ambient temperature range TA = 0°C to 70°C. Parameters denoted with an asterisk ( * ) represent nominal characterization data and are not production tested to any specific limits. Where given, MIN and MAX characterization data are ± 3σ from typical.

PARAMETER SYMBOL CONDITIONS/DESCRIPTION MIN. TYP. MAX. UNITS

Overall

VCXO Stabilization Time * t PLL Stabilization Time * t Synthesis Error (unless otherwise noted in Frequency Table) 0 ppm

Clock Output (CLK)

Duty Cycle *

Jitter, Period (peak-peak) *

Jitter, Long Term (σy(τ)) * Rise Time * t

Fall Time * t

VCXOSTB

PLLSTB

t

j(∆P)

t

j(LT)

r

f

From power valid 10 ms From VCXO stable 500 us

Ratio of high pulse width (as measured from rising edge to next falling edge at V

From rising edge to next rising edge at VDD/2,

= 10pF

C

L

From 0-500µs at VDD/2, CL = 10pF compared to ideal clock source

VDD = 3.3V; VO = 0.3V to 3.0V; CL = 10pF 1.7 ns VDD = 3.3V; VO = 3.0V to 0.3V; CL = 10pF 1.7 ns

/2) to one clock period

DD

45 55 %

390 ps

155 ps

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FS6128-01

FS6128-01FS6128-01

PLL Clock Generator IC with VCXO

PLL Clock Generator IC with VCXOPLL Clock Generator IC with VCXO

5.0 Package Information

Table 7: 8-pin SOIC (0.150") Package Dimensions

AMERICAN MICROSYSTEMS, INC.

April 2000

DIMENSIONS

INCHES MILLIMETERS

MIN. MAX. MIN. MAX.

A 0.061 0.068 1.55 1.73 A1 0.004 0.0098 0.102 0.249 A2 0.055 0.061 1.40 1.55

B 0.013 0.019 0.33 0.49

C 0.0075 0.0098 0.191 0.249

D 0.189 0.196 4.80 4.98

E 0.150 0.157 3.81 3.99

e 0.050 BSC 1.27 BSC

H 0.230 0.244 5.84 6.20

h 0.010 0.016 0.25 0.41

L 0.016 0.035 0.41 0.89

Θ 0° 8° 0° 8°

8

AMERICAN MICROSYSTEMS, INC.

1

B

BASE PLANE

R

e

D

SEATING

Table 8: 8-pin SOIC (0.150") Package Characteristics

PARAMETER SYMBOL CONDITIONS/DESCRIPTION TYP. UNITS

Thermal Impedance, Junction to Free-Air 8-pin 0.150” SOIC

Lead Inductance, Self L

Lead Inductance, Mutual L Lead Capacitance, Bulk C

Θ

JA

11

12

11

Air flow = 0 m/s 110 °C/W Corner lead 2.0

Center lead 1.6 Any lead to any adjacent lead 0.4 nH Any lead to V

SS

A

PLANE

HE

ALL RADII:

0.005" TO 0.01"

A

2

1

7° typ.h x 45°

C

L

θ

nH

0.27 pF

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AMERICAN MICROSYSTEMS, INC.

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6.0 Ordering Information

Table 9: Device Ordering Codes

FS6128-01

FS6128-01FS6128-01

PLL Clock Generator IC with VCXO

PLL Clock Generator IC with VCXOPLL Clock Generator IC with VCXO

ORDERING CODE DEVICE NUMBER PACKAGE TYPE

11640-101

11640-111

FS6128-01

8-pin (0.150”) SOIC

(Small Outline Package)

8-pin (0.150”) SOIC

(Small Outline Package)

7.0 Revision Information

DATE PAGE DESCRIPTION

4/24/00 5, 7 Fixed formatt i ng errors

OPERATING

TEMPERATURE RANGE

0°C to 70°C (Commer cial)

SHIPPING

CONFIGURATION

Tape and Reel

Tubes

Devices sold by AMI are covered by the warranty and patent indemnification provisions appearing in its Terms of Sale only. AMI makes no warranty, express, statutory implied or by description, regarding the information set forth herein or regarding the freedom of the described devices from patent infringement. AMI makes no warranty of merchantability or fitness for any purposes. AMI reserves the right to discontinue production and change specifications and prices at any time and without notice. AMI’s products are intended for use in commercial applications. Applications requiring extended temperature range, unusual environmental requirements, or high reliability applications, such as military, medical life-support or life-sustaining equipment, are specifically not recom mended without additional processing by AMI for such applications.

American Microsystems, Inc., 2300 Buckskin Rd., Pocatello, ID 83201, (208) 233-4690, FAX (208) 234-6796, WWW Address: http://www.amis.com E-mail: [email protected]

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