Page 1
MITSUBISHI Nch POWER MOSFET
FS50KMJ-2
HIGH-SPEED SWITCHING USE
FS50KMJ-2
¡4V DRIVE
DSS ................................................................................100V
¡V
¡r
DS (ON) (MAX) ..............................................................48mΩ
D ......................................................................................... 50A
¡I
¡Integrated Fast Recovery Diode (TYP.)
iso ................................................................................ 2000V
¡V
............. 90ns
OUTLINE DRAWING Dimensions in mm
10 ± 0.3 2.8 ± 0.2
3 ± 0.33.6 ± 0.3
15 ± 0.314 ± 0.5
123
w
q
e
6.5 ± 0.3
f 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
q GATE
w DRAIN
e SOURCE
E
0.75 ± 0.15
4.5 ± 0.2
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 50µH
AC for 1minute, Terminal to case
Typical value
100
±20
50
200
50
50
200
30
–55 ~ +150
–55 ~ +150
2000
2.0
V
V
A
A
A
A
A
W
°C
°C
V
g
Feb.1999
Page 2
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
GS = ±20V, VDS = 0V
V
DS = 100V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 25A, VGS = 10V
I
D = 25A, VGS = 4V
I
D = 25A, VGS = 10V
I
D = 25A, VDS = 10V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 50V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω
V
S = 25A, VGS = 0V
I
Channel to case
S = 50A, dis/dt = –100A/µs
I
MITSUBISHI Nch POWER MOSFET
FS50KMJ-2
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
100
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
37
40
0.93
40
3000
410
210
22
65
270
160
1.0
—
90
—
±0.1
0.1
2.0
48
52
1.20
—
—
—
—
—
—
—
—
1.5
4.17
—
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
(W)
40
D
30
20
10
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
100
VGS = 10V
80
(A)
D
60
(TYPICAL)
5V
C
(°C)
TC = 25°C
Pulse Test
4V
MAXIMUM SAFE OPERATING AREA
3
2
2
10
7
(A)
5
D
3
2
1
10
7
5
3
2
DRAIN CURRENT I
TC = 25°C
0
10
Single Pulse
7
5
3
0
357 2 10
357 2 10
10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 10V
(A)
D
50
40
5V
3.5V
30
1
DC
357
TC = 25°C
Pulse Test
tw = 10ms
100ms
1ms
10ms
100ms
2
23
DS
(V)
3V
40
20
DRAIN CURRENT I
0
0246810
PD = 30W
DRAIN-SOURCE VOLTAGE VDS (V)
3V
20
10
DRAIN CURRENT I
PD = 30W
0
012345
DRAIN-SOURCE VOLTAGE VDS (V)
2.5V
Feb.1999
Page 3
MITSUBISHI Nch POWER MOSFET
FS50KMJ-2
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
5
4
3
DS (ON) (V)
2
VOLTAGE V
1
DRAIN-SOURCE ON-STATE
0
0246810
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
100
80
60
40
20
DRAIN CURRENT ID (A)
TC = 25°C
Pulse Test
ID = 80A
50A
20A
GS (V)
TC = 25°C
DS
= 10V
V
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100
TC = 25°C
Pulse Test
80
60
40
20
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (mΩ)
0
0
10
357 2 10
357 2 10
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
2
10
VDS = 10V
7
Pulse Test
5
4
(S)
3
2
1
10
7
5
4
3
ADMITTANCE yfs
FORWARD TRANSFER
2
VGS = 4V
1
357
D (A)
TC = 25°C
75°C
125°C
10V
2
23
0
0246810
GATE-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE
2
Tch = 25°C
4
GS
= 0V
V
10
7
f = 1MH
5
3
2
3
10
7
5
3
2
CAPACITANCE
Ciss, Coss, Crss (pF)
2
10
7
5
3
2
10
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
Z
0
210
1
357357 2 10
GS (V)
Ciss
Coss
Crss
2
357 23
DS (V)
0
10
0
10
23457 10
DRAIN CURRENT I
SWITCHING CHARACTERISTICS
(TYPICAL)
3
10
7
5
4
3
t
d(off)
2
t
f
10
2
7
5
4
3
SWITCHING TIME (ns)
2
1
10
0
10
t
r
t
d(on)
23457 10
DRAIN CURRENT ID (A)
10
10
1
1
Tch = 25°C
V
V
R
23457
D (A)
DD
= 50V
GS
= 10V
GEN
= RGS = 50Ω
23457
2
2
Feb.1999
Page 4
MITSUBISHI Nch POWER MOSFET
FS50KMJ-2
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
10
Tch = 25°C
(V)
I
D
GS
= 50A
8
6
4
2
GATE-SOURCE VOLTAGE V
0
0 20406080100
GATE CHARGE Q
VDS = 20V
40V
80V
g
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
DS (ON)
DS (ON)
10
1
VGS = 10V
7
I
5
Pulse Test
4
D
= 1/2I
(TYPICAL)
D
3
2
0
10
7
5
4
3
2
–1
10
–50 0 50 100 150
DRAIN-SOURCE ON-STATE RESISTANCE r
DRAIN-SOURCE ON-STATE RESISTANCE r
CHANNEL TEMPERATURE Tch (°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
100
VGS = 0V
Pulse Test
80
(A)
S
60
40
20
SOURCE CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
4.0
VDS = 10V
I
D
= 1mA
3.2
(V)
2.4
GS (th)
1.6
VOLTAGE V
0.8
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
TC = 125°C
75°C
25°C
SD
(V)
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
(BR) DSS
(BR) DSS
1.4
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V
I
D
= 1mA
1.2
1.0
0.8
0.6
0.4
–50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
2
10
7
5
(ch–c)
3
th
2
1
10
7
D = 1.0
5
0.5
3
2
0.2
0
10
7
5
3
2
–1
10
7
5
3
2
–2
10
–4
23 57 23 57 23 57 23 57
10
10
TRANSIENT THERMAL IMPEDANCE Z
CHARACTERISTICS
0.1
0.05
0.02
0.01
Single Pulse
–3
10
–2
PULSE WIDTH t
10
–1
P
10023 57
w
(s)
DM
tw
D
T
tw
=
T
10123 57
2
10
Feb.1999
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