Datasheet FS50KM-3 Datasheet (POWEREX)

MITSUBISHI Nch POWER MOSFET

FS50KM-3

HIGH-SPEED SWITCHING USE

FS50KM-3

¡10V DRIVE

DSS ............................................................................... 150V

¡V ¡r

DS (ON) (MAX) ..............................................................31mΩ

D ......................................................................................... 50A

¡I ¡Integrated Fast Recovery Diode (TYP.)

iso ................................................................................ 2000V

¡V

.......... 130ns

OUTLINE DRAWING Dimensions in mm

10 ± 0.3 2.8 ± 0.2

3 ± 0.33.6 ± 0.3

15 ± 0.314 ± 0.5

123

w

q

e

6.5 ± 0.3

f 3.2 ± 0.2

1.1 ± 0.2

0.75 ± 0.15

2.54 ± 0.252.54 ± 0.25

2.6 ± 0.2

q GATE w DRAIN e SOURCE

E

0.75 ± 0.15

4.5 ± 0.2

TO-220FN

APPLICATION

Motor control, Lamp control, Solenoid control DC-DC converter, etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso

—

Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight

Parameter Conditions Ratings Unit

GS = 0V

V

DS = 0V

V

L = 100µH

AC for 1minute, Terminal to case Typical value

150 ±20

50

200

50 50

200

35 –55 ~ +150 –55 ~ +150

2000

2.0

V V A A A A A

W

°C °C

V g

Feb.1999

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Symbol UnitParameter Test conditions

D = 1mA, VGS = 0V

V

(BR) DSS

IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs

iss

C Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr

Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time

I

GS = ±20V, VDS = 0V

V

DS = 150V, VGS = 0V

V

D = 1mA, VDS = 10V

I

D = 25A, VGS = 10V

I

D = 25A, VGS = 10V

I

D = 25A, VDS = 10V

I

V

DS = 10V, VGS = 0V, f = 1MHz

DD = 80V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω

V

I

S = 25A, VGS = 0V

Channel to case

S = 50A, dis/dt = –100A/µs

I

MITSUBISHI Nch POWER MOSFET

FS50KM-3

HIGH-SPEED SWITCHING USE

Limits

Min. Typ. Max.

150

— —

2.0 — — — — — — — — — — — — —

— — —

3.0 24

0.600 55

6540

860 360

95

155 380 180

1.0 —

130

—

±0.1

0.1

4.0 31

0.775 — — — — — — — —

1.5

3.57 —

V

µA

mA

V

mΩ

V

S pF pF pF ns ns ns ns

V

°C/W

ns

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE

50

(W)

40

D

30

20

10

POWER DISSIPATION P

0

0 20050 100 150

CASE TEMPERATURE T

OUTPUT CHARACTERISTICS

VGS = 20V

80

60

(A)

D

100

(TYPICAL)

8V

10V

7V

TC = 25°C Pulse Test

C

(°C)

6V

MAXIMUM SAFE OPERATING AREA

3 2

2

10

7

(A)

5

D

3 2

1

10

7 5

3 2

DRAIN CURRENT I

0

10

7

TC = 25°C

5

Single Pulse

3

0

210

10

1

357 2 10

DRAIN-SOURCE VOLTAGE V

OUTPUT CHARACTERISTICS

(TYPICAL)

7V

10V

6V

(A)

D

50

40

VGS = 20V

30

DC

tw = 10ms

100ms

1ms

10ms 100ms

2

357

TC = 25°C Pulse Test

DS

3

(V)

5V

40

20

DRAIN CURRENT I

0

0 1.0 2.0 3.0 4.0 5.0

DRAIN-SOURCE VOLTAGE VDS (V)

PD = 35W

5V

20

10

DRAIN CURRENT I

0

0 0.4 0.8 1.2 1.6 2.0

DRAIN-SOURCE VOLTAGE VDS (V)

PD = 35W

4V

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS50KM-3

HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.

GATE-SOURCE VOLTAGE

(TYPICAL)

2.0

1.6

(V)

1.2

DS (ON)

0.8

VOLTAGE V

0.4

DRAIN-SOURCE ON-STATE

TC = 25°C Pulse Test

0

0 4 8 12 16 20

GATE-SOURCE VOLTAGE V

TRANSFER CHARACTERISTICS

(TYPICAL)

100

80

(A)

D

60

40

20

DRAIN CURRENT I

ID = 100A

80A

50A

20A

GS

(V)

TC = 25°C

DS

= 10V

V Pulse Test

ON-STATE RESISTANCE VS.

DRAIN CURRENT

(TYPICAL)

40

TC = 25°C Pulse Test

32

(mΩ)

24

DS (ON)

16

8

DRAIN-SOURCE ON-STATE

RESISTANCE r

0

10

357 2 10

DRAIN CURRENT I

FORWARD TRANSFER ADMITTANCE

VS.DRAIN CURRENT

(TYPICAL)

2

10

VDS = 10V

7

Pulse Test

5 4

(S)

3



fs

2

1

10

7 5

4 3

ADMITTANCE y

FORWARD TRANSFER

2

VGS = 10V

1

357 23

D

(A)

TC = 25°C 75°C 125°C

20V

2

0

0 4 8 12 16 20

GATE-SOURCE VOLTAGE V

DRAIN-SOURCE VOLTAGE

2

4

10

7 5

3 2

3

10

7 5

3 2

CAPACITANCE

Ciss, Coss, Crss (pF)

2

10

7

Tch = 25°C

5

f = 1MH

3

VGS = 0V

2

10

DRAIN-SOURCE VOLTAGE V

CAPACITANCE VS.

(TYPICAL)

Z

0

210

1

357357 2 10

GS

(V)

Ciss

Coss Crss

2

357 23

DS

(V)

0

10

0

10

23457 10

DRAIN CURRENT I

SWITCHING CHARACTERISTICS

(TYPICAL)

3

10

7

t

5 4

d(off)

3 2

2

10

7 5

4 3

SWITCHING TIME (ns)

t

f

t

r

t

d(on)

2

1

10

0

10

23457 10

DRAIN CURRENT ID (A)

1

10

Tch = 25°C V V R

1

10

DD GS

GEN

23457

D

(A)

= 80V = 10V

= RGS = 50Ω

23457

2

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS50KM-3

HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE

VS.GATE CHARGE

(TYPICAL)

20

Tch = 25°C I

D

(V)

GS

= 50A

16

VDS = 50V

12

8

80V 100V

4

GATE-SOURCE VOLTAGE V

0

0 40 80 120 160 200

g

GATE CHARGE Q

(nC)

ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE

(t°C)

(25°C)

DS (ON)

10

1

VGS = 10V

7

I

5

Pulse Test

4

D

= 1/2I

(TYPICAL)

D

3 2

0

10

7 5

4 3

2

–1

10

–50 0 50 100 150

DRAIN-SOURCE ON-STATE RESISTANCE r

CHANNEL TEMPERATURE Tch (°C)

SOURCE-DRAIN DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

100

TC = 125°C

80

(A)

S

60

40

20

SOURCE CURRENT I

0

0 0.4 0.8 1.2 1.6 2.0

SOURCE-DRAIN VOLTAGE V

THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE

(TYPICAL)

5.0

VDS = 10V

D

= 1mA

I

4.0

(V)

3.0

GS (th)

2.0

VOLTAGE V

1.0

GATE-SOURCE THRESHOLD

0

–50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C)

75°C 25°C

VGS = 0V Pulse Test

SD

(V)

BREAKDOWN VOLTAGE VS.

(t°C)

(25°C)

(BR) DSS

1.4

CHANNEL TEMPERATURE

(TYPICAL)

VGS = 0V I

D

= 1mA

1.2

1.0

0.8

0.6

0.4 –50 0 50 100 150

DRAIN-SOURCE BREAKDOWN VOLTAGE V

CHANNEL TEMPERATURE Tch (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE V

TRANSIENT THERMAL IMPEDANCE

(°C/W)

1

10

7

(ch–c)

5

D = 1.0

th

3

0.5

2

0

0.2

10

7

0.1

5 3

0.05

2

0.02

–1

10

7

10

5 3

2

–2

10

0.01 Single Pulse

–4

23 57 23 57 23 57 23 57

10

TRANSIENT THERMAL IMPEDANCE Z

CHARACTERISTICS

–3

10

–2

PULSE WIDTH t

10

–1

10023 57

w

(s)

P

tw

D

DM

T

=

tw

T

10123 57

2

10

Feb.1999