Page 1
MITSUBISHI Nch POWER MOSFET
FS4VS-12
HIGH-SPEED SWITCHING USE
FS4VS-12
¡VDSS ................................................................................600V
DS (ON) (MAX) ................................................................ 2.6Ω
¡r
¡I
D ............................................................................................ 4A
OUTLINE DRAWING Dimensions in mm
r
+0.3
–0.5
3.0
q
10.5MAX.
1
qwe
5
wr
e
0.8
1.5MAX.
9.8 ± 0.5
8.6 ± 0.3
1.5MAX.
4.5
2.6 ± 0.4
q GATE
w DRAIN
e SOURCE
r DRAIN
4.5
0.5
1.3
+0.3
0
–0
(1.5)
TO-220S
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
Typical value
600
±30
4
12
90
–55 ~ +150
–55 ~ +150
1.2
V
V
A
A
W
°C
°C
g
Feb.1999
Page 2
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 600V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 2A, VGS = 10V
ID = 2A, VGS = 10V
I
D = 2A, VDS = 10V
DS = 25V, VGS = 0V, f = 1MHz
V
VDD = 200V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω
I
S = 2A, VGS = 0V
Channel to case
MITSUBISHI Nch POWER MOSFET
FS4VS-12
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
600
±30
—
—
2
—
—
1.8
—
—
—
—
—
—
—
—
—
—
—
—
—
3
2.0
4.0
3.0
600
65
10
15
15
60
30
1.5
—
—
—
±10
2.6
5.2
—
—
—
—
—
—
—
—
2.0
1.39
V
V
µA
mA
1
V
4
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
(W)
80
D
60
40
20
POWER DISSIPATION P
0
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
10
8
(A)
D
6
(TYPICAL)
PD = 90W
C
(°C)
V
GS
200150100500
6V
= 20V
10V
8V
MAXIMUM SAFE OPERATING AREA
3
2
1
10
7
(A)
5
D
3
2
0
10
7
5
3
2
–1
10
7
5
3
23 5710
TC = 25°C
Single Pulse
1
23 5710223 5710
DRAIN CURRENT I
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
= 20V
10V
8V
(A)
D
5
TC = 25°C
4
Pulse Test
3
tw=10µs
100µs
1ms
10ms
DC
3
DS
(V)
6V
2
4
2
DRAIN CURRENT I
0
0 1020304050
TC = 25°C
Pulse Test
DRAIN-SOURCE VOLTAGE VDS (V)
5V
2
1
DRAIN CURRENT I
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
5V
Feb.1999
Page 3
MITSUBISHI Nch POWER MOSFET
FS4VS-12
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
32
(V)
24
DS (ON)
16
VOLTAGE V
8
DRAIN-SOURCE ON-STATE
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
10
8
(A)
D
6
4
2
DRAIN CURRENT I
ID = 8A
TC = 25°C
Pulse Test
GS
TC = 25°C
VDS = 50V
Pulse Test
6A
4A
2A
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
10
TC = 25°C
Pulse Test
8
(Ω)
DS (ON)
6
V
4
2
RESISTANCE r
DRAIN-SOURCE ON-STATE
0
–1
57 10023 5710123 5710
2310
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
1
10
7
5
(S)
3
fs
2
0
10
7
5
3
ADMITTANCE y
FORWARD TRANSFER
2
GS
= 10V
TC = 25°C
125°C
20V
D
(A)
V
DS
= 10V
Pulse Test
75°C
2
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE
3
10
7
5
3
2
2
10
7
5
3
2
CAPACITANCE
Ciss, Coss, Crss (pF)
1
10
Tch = 25°C
7
f = 1MHz
5
GS
= 0V
V
3
23 5710
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
0
23 5710
1
23 5710
GS
Ciss
Coss
Crss
DS
(V)
2
(V)
23
–1
10
10–123 5710
DRAIN CURRENT I
SWITCHING CHARACTERISTICS
(TYPICAL)
3
10
7
5
t
f
3
2
t
d(off)
2
10
7
5
3
SWITCHING TIME (ns)
2
t
d(on)
t
r
1
10
–1
23 5710
10
DRAIN CURRENT ID (A)
0
23 5710
D
Tch = 25°C
VDD = 200V
GS
= 10V
V
R
GEN
= R
GS
0
23 5710
1
(A)
= 50Ω
1
Feb.1999
Page 4
MITSUBISHI Nch POWER MOSFET
FS4VS-12
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
16
12
Tch = 25°C
ID = 4A
V
DS
= 100V
200V
(V)
GS
400V
8
4
GATE-SOURCE VOLTAGE V
0
0 8 16 24 32 40
GATE CHARGE Q
g
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
DS (ON)
DS (ON)
10
1
7
5
VGS = 10V
ID = 1/2I
Pulse Test
(TYPICAL)
D
3
2
0
10
7
5
3
2
–1
10
–50
DRAIN-SOURCE ON-STATE RESISTANCE r
DRAIN-SOURCE ON-STATE RESISTANCE r
CHANNEL TEMPERATURE Tch (°C)
0 50 100 150
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
(A)
S
TC=125°C
12
8
4
SOURCE CURRENT I
0
0 0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V
ID = 1mA
4.0
(V)
3.0
GS (th)
2.0
VOLTAGE V
1.0
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
25°C
75°C
VGS = 0V
Pulse Test
SD
(V)
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
CHANNEL TEMPERATURE
(TYPICAL)
1.4
BR (DSS)
BR (DSS)
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
1
10
7
(ch–c)
5
th
3
2
D=1
0
10
0.5
7
5
0.2
3
0.1
2
–1
10
7
5
3
2
–2
10
–4
23 57
10
10
TRANSIENT THERMAL IMPEDANCE Z
CHARACTERISTICS
0.05
0.02
0.01
Single Pulse
–3
–2
23 57 23 57 23 57
10
10
–1
PULSE WIDTH t
P
10023 57
w
(s)
DM
tw
D=
T
tw
T
10123 57
2
10
Feb.1999
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