Page 1
MITSUBISHI Nch POWER MOSFET
FS3UM-9
HIGH-SPEED SWITCHING USE
FS3UM-9
¡VDSS ................................................................................ 450V
¡r
DS (ON) (MAX) .................................................................3.5Ω
¡I
D ............................................................................................ 3A
OUTLINE DRAWING Dimensions in mm
4.5
1.3
0.5 2.6
4.5MAX.
16
3.8MAX.
12.5MIN.
q
10.5MAX.
3.2
2.54 2.54
qwe
wr
e
r
7.0
φ 3.6
1.0
0.8
q GATE
w DRAIN
e SOURCE
r DRAIN
TO-220
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
Typical value
450
±30
3
9
60
–55 ~ +150
–55 ~ +150
2.0
V
V
A
A
W
°C
°C
g
Feb.1999
Page 2
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 450V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 1A, VGS = 10V
ID = 1A, VGS = 10V
ID = 1A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω
IS = 1A, VGS = 0V
Channel to case
MITSUBISHI Nch POWER MOSFET
FS3UM-9
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
450
±30
—
—
2
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
3
2.7
2.7
1.5
300
35
6
13
10
30
30
1.5
—
—
—
±10
3.5
3.5
—
—
—
—
—
—
—
—
2.0
2.08
V
V
µA
mA
1
V
4
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
80
60
40
20
POWER DISSIPATION PD (W)
0
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
10
DRAIN CURRENT ID (A)
PD = 60W TC = 25°C
8
6
4
2
0
0 1020304050
(TYPICAL)
C (°C)
Pulse Test
VGS=20V
10V
8V
MAXIMUM SAFE OPERATING AREA
1
10
7
5
3
2
0
10
7
5
3
2
–1
10
7
5
DRAIN CURRENT ID (A)
200150100500
TC = 25°C
Single Pulse
3
2
–2
10
23 5710123 5710223 571032
DRAIN-SOURCE VOLTAGE V
tw=10µs
100µs
1ms
10ms
DC
DS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
5
Pulse Test
4
PD=60WTC = 25°C
VGS=20V
10V
8V
3
6V
2
6V
1
5V
DRAIN CURRENT ID (A)
0
0 4 8 12 16 20
5V
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
Page 3
MITSUBISHI Nch POWER MOSFET
FS3UM-9
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
32
(V)
24
DS (ON)
16
VOLTAGE V
8
DRAIN-SOURCE ON-STATE
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
10
8
(A)
D
6
4
2
DRAIN CURRENT I
TC=25°C
Pulse Test
ID=4A
GS
(V)
TC=25°C
DS
=50V
V
Pulse Test
3A
2A
1A
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
10
TC=25°C
Pulse Test
8
(Ω)
6
DS (ON)
4
2
RESISTANCE r
DRAIN-SOURCE ON-STATE
0
–2
5710–123 5710023 5710
2310
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
1
10
7
5
(S)
3
fs
2
0
10
7
5
3
ADMITTANCE y
FORWARD TRANSFER
2
125°C
VGS=10V
D
VDS=10V
Pulse Test
TC=25°C
75°C
20V
1
(A)
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE
7
5
3
2
2
10
7
5
3
2
CAPACITANCE
1
10
Ciss, Coss, Crss (pF)
7
Tch=25°C
5
f=1MHz
3
GS
=0V
V
2
23 5710
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
0
23 5710
1
23 571022
GS
DS
(V)
Ciss
Coss
Crss
(V)
–1
10
10–123 5710
DRAIN CURRENT I
SWITCHING CHARACTERISTICS
(TYPICAL)
5
3
2
t
f
2
10
7
t
5
d(off)
3
2
t
SWITCHING TIME (ns)
1
10
d(on)
t
r
7
5
–1
23 5710
10
DRAIN CURRENT ID (A)
0
23 5710
D
Tch = 25°C
VDD = 200V
VGS = 10V
GEN
= R
R
0
23 5710
(A)
GS
1
= 50Ω
1
Feb.1999
Page 4
MITSUBISHI Nch POWER MOSFET
FS3UM-9
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
Tch = 25°C
ID = 3A
16
12
VDS = 100V
200V
400V
8
4
GATE-SOURCE VOLTAGE VGS (V)
0
0 4 8 12 16 20
GATE CHARGE Q
g (nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
DS (ON)
DS (ON)
10
1
7
5
VGS = 10V
D = 1/2ID
I
Pulse Test
(TYPICAL)
3
2
0
10
7
5
3
2
–1
10
–50
DRAIN-SOURCE ON-STATE RESISTANCE r
DRAIN-SOURCE ON-STATE RESISTANCE r
CHANNEL TEMPERATURE Tch (°C)
0 50 100 150
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
TC=125°C
8
6
4
2
SOURCE CURRENT IS (A)
0
0 0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V
ID = 1mA
4.0
3.0
GS (th) (V)
2.0
VOLTAGE V
1.0
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
25°C
75°C
VGS = 0V
Pulse Test
SD (V)
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
CHANNEL TEMPERATURE
(TYPICAL)
1.4
BR (DSS)
BR (DSS)
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
10
10
10
10
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1
7
5
3
D=1
2
0.5
0
0.2
7
5
3
2
–1
7
5
3
2
–2
–4
23 57
10
0.1
0.05
0.02
0.01
Single Pulse
10
–3
–2
23 57 23 57 23 57
10
10
PULSE WIDTH t
PDM
tw
T
tw
D=
T
–1
10023 57
w (s)
10123 57
2
10
Feb.1999
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