Datasheet FS30VSJ-3 Datasheet (POWEREX)

MITSUBISHI Nch POWER MOSFET

FS30VSJ-3

HIGH-SPEED SWITCHING USE

FS30VSJ-3

¡4V DRIVE ¡V

DSS ................................................................................150V

DS (ON) (MAX) ..............................................................86mΩ

¡r

D ......................................................................................... 30A

¡I ¡Integrated Fast Recovery Diode (TYP.)

...........100ns

OUTLINE DRAWING Dimensions in mm

+0.3

–0.5

3.0

q

10.5MAX.

1

qwe

5

wr

e

0.8

1.5MAX.

8.6 ± 0.3

1.5MAX.

2.6 ± 0.4

q GATE w DRAIN e SOURCE r DRAIN

r

4.5

9.8 ± 0.5

B

4.5

0.5

1.3

+0.3

0

–0

TO-220S

(1.5)

APPLICATION

Motor control, Lamp control, Solenoid control DC-DC converter, etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg

—

Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight

Parameter Conditions Ratings Unit

GS = 0V

V

DS = 0V

V

L = 100µH

Typical value

150 ±20

30

120

30 30

120

70 –55 ~ +150 –55 ~ +150

1.2

V V A A A A A

W

°C °C

g

Feb.1999

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Symbol UnitParameter Test conditions

V

(BR) DSS

IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs

iss

C Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr

Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time

ID = 1mA, VGS = 0V

GS = ±20V, VDS = 0V

V

DS = 150V, VGS = 0V

V

D = 1mA, VDS = 10V

I

D = 15A, VGS = 10V

I

D = 15A, VGS = 4V

I

D = 15A, VGS = 10V

I

D = 15A, VDS = 10V

I

V

DS = 10V, VGS = 0V, f = 1MHz

DD = 80V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω

V

S = 15A, VGS = 0V

I Channel to case

S = 30A, dis/dt = –100A/µs

I

MITSUBISHI Nch POWER MOSFET

FS30VSJ-3

HIGH-SPEED SWITCHING USE

Limits

Min. Typ. Max.

150

— —

1.0 — — — — — — — — — — — — — —

— — —

1.5 66 69

0.99 38

3000

320 160

22 42

280 130

1.0 —

100

—

±0.1

0.1

2.0 86 90

1.29 — — — — — — — —

1.5

1.78 —

V

µA

mA

V mΩ mΩ

V

S

pF pF pF ns ns ns ns

V

°C/W

ns

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE

100

(W)

80

D

60

40

20

POWER DISSIPATION P

0

0 20050 100 150

CASE TEMPERATURE T

OUTPUT CHARACTERISTICS

50

40

(A)

D

30

(TYPICAL)

VGS = 10V

4V

5V

C

(°C)

3V

MAXIMUM SAFE OPERATING AREA

3 2

2

10

7

(A)

5

D

3 2

1

10

7 5

3 2

DRAIN CURRENT I

0

10

7 5

3

101210

tw = 10ms

DC

357357 2 10

DRAIN-SOURCE VOLTAGE V

OUTPUT CHARACTERISTICS

(TYPICAL)

5V

(A)

D

20

16

VGS = 10V

12

TC = 25°C Single Pulse

100ms

1ms 10ms

100ms

2

357 23

4V

TC = 25°C

3V

Pulse Test

DS

2

(V)

2.5V

20

PD = 70W

10

DRAIN CURRENT I

TC = 25°C

0

012345

Pulse Test

DRAIN-SOURCE VOLTAGE VDS (V)

8

4

DRAIN CURRENT I

0

0 0.4 0.8 1.2 1.6 2.0

DRAIN-SOURCE VOLTAGE VDS (V)

2V

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS30VSJ-3

HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.

GATE-SOURCE VOLTAGE

(TYPICAL)

5

4

(V)

3

DS (ON)

2

VOLTAGE V

1

DRAIN-SOURCE ON-STATE

0

0246810

GATE-SOURCE VOLTAGE V

TRANSFER CHARACTERISTICS

(TYPICAL)

50

40

(A)

D

30

20

10

DRAIN CURRENT I

0

0246810

TC = 25°C Pulse Test

ID = 50A

30A

10A

GS

(V)

TC = 25°C

DS

= 10V

V Pulse Test

ON-STATE RESISTANCE VS.

DRAIN CURRENT

(TYPICAL)

100

TC = 25°C Pulse Test

80

(mΩ)

60

DS (ON)

40

20

DRAIN-SOURCE ON-STATE

RESISTANCE r

0

10

357 2 10

DRAIN CURRENT I

FORWARD TRANSFER ADMITTANCE

VS.DRAIN CURRENT

(TYPICAL)

2

10

7

(S)



fs

10

5 4

3 2

1

TC = 25°C

7 5

4 3

ADMITTANCE y

FORWARD TRANSFER

2

0

10

0

10

23457 10

10

1

VGS = 4V

10V

2

357 23

D

(A)

75°C 125°C

VDS = 10V Pulse Test

23457

2

GATE-SOURCE VOLTAGE V

DRAIN-SOURCE VOLTAGE

2

4

10

7 5

3 2

3

10

7 5

3 2

CAPACITANCE

Ciss, Coss, Crss (pF)

2

10

7 5

3 2

10

DRAIN-SOURCE VOLTAGE V

CAPACITANCE VS.

(TYPICAL)

Ciss

Coss

Crss

0

210

1

357357 2 10

GS

(V)

Tch = 25°C

GS

= 0V

V f = 1MH

Z

2

357 23

DS

(V)

DRAIN CURRENT I

SWITCHING CHARACTERISTICS

(TYPICAL)

3

10

7 5

4 3

t

d(off)

2

t

10

2

f

7 5

4 3

SWITCHING TIME (ns)

2

1

10

0

10

t

r

t

d(on)

23457 10

DRAIN CURRENT ID (A)

Tch = 25°C V V R

1

10

DD GS

D

(A)

= 80V = 10V

GEN

= RGS = 50Ω

23457

2

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS30VSJ-3

HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE

VS.GATE CHARGE

(TYPICAL)

10

Tch = 25°C

D

= 30A

I

(V)

GS

8

VDS = 50V

6

80V 100V

4

2

GATE-SOURCE VOLTAGE V

0

0 20406080100

g

GATE CHARGE Q

(nC)

ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE

(t°C)

(25°C)

DS (ON)

10

1

VGS = 10V

7

I

5

Pulse Test

4

D

= 1/2I

(TYPICAL)

D

3 2

0

10

7 5

4 3

2

–1

10

–50 0 50 100 150

DRAIN-SOURCE ON-STATE RESISTANCE r

CHANNEL TEMPERATURE Tch (°C)

SOURCE-DRAIN DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

50

40

(A)

S

30

TC = 125°C

20

10

SOURCE CURRENT I

0

0 0.4 0.8 1.2 1.6 2.0

SOURCE-DRAIN VOLTAGE V

THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE

(TYPICAL)

4.0

VDS = 10V

D

= 1mA

I

3.2

(V)

2.4

GS (th)

1.6

VOLTAGE V

0.8

GATE-SOURCE THRESHOLD

0

–50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C)

75°C 25°C

VGS = 0V Pulse Test

SD

(V)

BREAKDOWN VOLTAGE VS.

(t°C)

(25°C)

(BR) DSS

1.4

CHANNEL TEMPERATURE

(TYPICAL)

VGS = 0V

D

= 1mA

I

1.2

1.0

0.8

0.6

0.4 –50 0 50 100 150

DRAIN-SOURCE BREAKDOWN VOLTAGE V

CHANNEL TEMPERATURE Tch (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE V

TRANSIENT THERMAL IMPEDANCE

(°C/W)

2

10

7 5

(ch–c)

3

th

2

1

10

7 5

3

D = 1.0

2

0.5

0

10

7

0.2

5 3

2

–1

10

7 5

3 2

–2

10

–4

23 57 23 57 23 57 23 57

10

TRANSIENT THERMAL IMPEDANCE Z

CHARACTERISTICS

0.1

0.05

0.02

0.01 Single Pulse

–3

10

–2

PULSE WIDTH t

10

–1

10023 57

w

(s)

P

tw

D

DM

T

=

tw

T

10123 57

2

10

Feb.1999