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FS30ASH-06
Datasheet (POWEREX)
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Datasheet FS30ASH-06 Datasheet (POWEREX)

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Page 1
MITSUBISHI Nch POWER MOSFET
FS30ASH-06
HIGH-SPEED SWITCHING USE
FS30ASH-06
¡2.5V DRIVE
DSS .................................................................................. 60V
¡V
DS (ON) (MAX) ..............................................................30mΩ
¡r
D ......................................................................................... 30A
¡I ¡Integrated Fast Recovery Diode (TYP.)
............. 65ns
OUTLINE DRAWING Dimensions in mm
0.9MAX.
2.3
q
6.5
5.0 ± 0.2
r
1.0
1.0MAX.
2.3
2.3
qwe
wr
e
10MAX.
5.5 ± 0.2
2.3MIN. 1.5 ± 0.2
q GATE w DRAIN e SOURCE r DRAIN
0.5 ± 0.1
A
0.5 ± 0.2
0.8
MP-3
APPLICATION
MAXIMUM RATINGS (Tc = 25°C)
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg
—
Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 100µH
Typical value
60
±10
30
120
30 30
120
35 –55 ~ +150 –55 ~ +150
0.26
V V A A A A A
W
°C °C
g
Feb.1999
Page 2
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs
iss
C Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr
Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
ID = 1mA, VGS = 0V
GS = ±10V , VDS = 0V
V
DS = 60V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 15A, VGS = 4V
I
D = 15A, VGS = 2.5V
I
D = 15A, VGS = 4V
I
D = 15A, VDS = 10V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 30V, ID = 15A, VGS = 4V, R GEN = RGS = 50Ω
V
I
S = 15A, VGS = 0V
Channel to case
S = 30A, dis/dt = –100A/µs
I
MITSUBISHI Nch POWER MOSFET
FS30ASH-06
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
60 — —
0.6 — — — — — — — — — — — — — —
— — —
0.9 25 30
0.38 34
2000
320 170
33
135 145 150
1.0 — 65
—
±0.1
0.1
1.2 30 39
0.45 — — — — — — — —
1.5
3.57 —
V
µA
mA
V mΩ mΩ
V
S
pF pF pF ns ns ns ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
VGS = 5V 4V
50
40
30
(TYPICAL)
3.5V
C (°C)
TC = 25°C Pulse Test
3V
2.5V
MAXIMUM SAFE OPERATING AREA
3 2
2
10
7 5
3 2
1
10
7 5
3 2
DRAIN CURRENT ID (A)
0
10
7
TC = 25°C
5
Single Pulse
3
0
357 2 10
357 2 10
10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 5V 4V 3V 2.5V
20
16
12
tw = 10ms
1
357 23
TC = 25°C Pulse Test
100ms
1ms
10ms DC
2
DS (V)
PD = 35W
2V
20
10
DRAIN CURRENT ID (A)
0
0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
PD = 35W
2V
8
4
DRAIN CURRENT ID (A)
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
1.5V
Feb.1999
Page 3
MITSUBISHI Nch POWER MOSFET
FS30ASH-06
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
2.0
1.6
(V)
1.2
DS (ON)
0.8
VOLTAGE V
0.4
DRAIN-SOURCE ON-STATE
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
50
40
(A)
D
30
20
10
DRAIN CURRENT I
TC = 25°C Pulse Test
ID = 50A
30A
10A
GS
(V)
TC = 25°C
DS
= 10V
V Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
50
40
(mΩ)
30
DS (ON)
20
10
DRAIN-SOURCE ON-STATE
RESISTANCE r
0
0
10
357 2 10
357 2 10
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
2
10
7 5
4
(S)
3
fs
2
1
10
7 5
4 3
ADMITTANCE y
FORWARD TRANSFER
2
VGS = 2.5V
TC = 25°C Pulse Test
1
357 23
D
TC = 25°C
75°C
125°C
4V
2
(A)
VDS = 10V Pulse Test
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE
4
10
7 5
3 2
3
10
7 5
3 2
2
10
CAPACITANCE
7
Ciss, Coss, Crss (pF)
5
Tch = 25°C
3
f = 1MH
2
VGS = 0V
1
10
10
357 2 10
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
Ciss
Coss
Crss
Z
0
1
357 2 10
GS
(V)
2
357 32
DS
(V)
0
10
0
10
23457 10
DRAIN CURRENT I
SWITCHING CHARACTERISTICS
(TYPICAL)
3
10
7 5
4 3
t
2
2
10
7 5
4 3
SWITCHING TIME (ns)
d(off)
t
f
t
r
t
d(on)
2
1
10
0
10
23457 10
DRAIN CURRENT ID (A)
1
10
TCh = 25°C V V R
1
10
23457
D
(A)
DD
= 30V
GS
= 4V
GEN
= RGS = 50Ω
23457
2
2
Feb.1999
Page 4
MITSUBISHI Nch POWER MOSFET
FS30ASH-06
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
5.0
Tch = 25°C
(V)
I
D
4.0
3.0
= 30A
VDS = 10V
20V 40V
GS
2.0
1.0
GATE-SOURCE VOLTAGE V
0
0 1020304050
g
GATE CHARGE Q
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
DS (ON)
DS (ON)
10
1
VGS = 4V
7
I
5
Pulse Test
4
D
= 1/2I
(TYPICAL)
D
3 2
0
10
7 5
4 3
2
–1
10
–50 0 50 100 150
DRAIN-SOURCE ON-STATE RESISTANCE r
DRAIN-SOURCE ON-STATE RESISTANCE r
CHANNEL TEMPERATURE Tch (°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
50
VGS = 0V Pulse Test
40
(A)
S
TC = 125°C
30
20
10
SOURCE CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
2.0
VDS = 10V I
D
= 1mA
1.6
(V)
1.2
GS (th)
0.8
VOLTAGE V
0.4
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
75°C 25°C
SD
(V)
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
(BR) DSS
(BR) DSS
1.4
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V
D
= 1mA
I
1.2
1.0
0.8
0.6
0.4 –50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
1
10
7
(ch–c)
5
D = 1.0
th
3
0.5
2
0.2
0
10
0.1
7 5
10
10
3 2
–1
7 5
3 2
–2
–4
10
0.05
0.02
0.01 Single Pulse
23 57 23 57 23 57 23 57
10
TRANSIENT THERMAL IMPEDANCE Z
CHARACTERISTICS
–3
10
–2
PULSE WIDTH t
10
–1
10023 57
w
(s)
P
DM
tw
D
T
tw
=
T
10123 57
2
10
Feb.1999
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