Datasheet FS2KM-12 Datasheet (POWEREX)

MITSUBISHI Nch POWER MOSFET

FS2KM-12

HIGH-SPEED SWITCHING USE

FS2KM-12

¡VDSS ................................................................................600V

¡r

DS (ON) (MAX) ................................................................ 6.4Ω

D ............................................................................................ 2A

¡I ¡V

iso ................................................................................ 2000V

OUTLINE DRAWING Dimensions in mm

10 ± 0.3 2.8 ± 0.2

3 ± 0.33.6 ± 0.3

15 ± 0.314 ± 0.5

123

w

q

e

6.5 ± 0.3

φ 3.2 ± 0.2

1.1 ± 0.2

0.75 ± 0.15

2.54 ± 0.252.54 ± 0.25

2.6 ± 0.2

q GATE w DRAIN e SOURCE

0.75 ± 0.15

4.5 ± 0.2

TO-220FN

APPLICATION

SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol Parameter Conditions Ratings Unit VDSS VGSS ID IDM PD Tch Tstg Viso

Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight

—

VGS = 0V VDS = 0V

AC for 1minute, Terminal to case Typical value

600 ±30

2 6

30 –55 ~ +150 –55 ~ +150

2000

2.0

V V A A

W

°C °C

Vrms

g

Feb.1999

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Symbol UnitParameter Test conditions

V

(BR) DSS

V

(BR) GSS

IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs

iss

C Coss Crss td (on) tr td (off) tf VSD Rth (ch-c)

Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance

ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V , VDS = 0V V

DS = 600V, VGS = 0V

D = 1mA, VDS = 10V

I ID = 1A, VGS = 10V ID = 1A, VGS = 10V I

D = 1A, VDS = 10V

VDS = 25V, VGS = 0V, f = 1MHz

DD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω

V

IS = 1A, VGS = 0V Channel to case

MITSUBISHI Nch POWER MOSFET

FS2KM-12

HIGH-SPEED SWITCHING USE

Limits

Min. Typ. Max.

600 ±30

— —

2 — —

0.8 — — — — — — — — —

— — — —

3

5.0

1.3

300

30

5 13 10 30 30

1.5 —

— —

±10

6.4

6.4 — — — — — — — —

2.0

4.17

V V

µA

mA

1

V

4

Ω

V

S pF pF pF

ns ns ns ns

V

°C/W

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE

50

(W)

40

D

30

20

10

POWER DISSIPATION P

0

CASE TEMPERATURE T

OUTPUT CHARACTERISTICS

5

PD = 30W

4

(A)

D

3

2

1

DRAIN CURRENT I

0

0 1020304050

(TYPICAL)

C

(°C)

TC = 25°C Pulse Test

VGS = 20V 10V 8V

6V

5V

MAXIMUM SAFE OPERATING AREA

1

10

7 5

3 2

(A)

D

0

10

7 5

3 2

–1

10

7 5

DRAIN CURRENT I

200150100500

TC = 25°C

3

Single Pulse

2

–2

10

23 5710123 5710223 571032

DRAIN-SOURCE VOLTAGE V

tw=10µs

100µs

1ms

10ms

DC

DS

(V)

OUTPUT CHARACTERISTICS

(TYPICAL)

VGS=20V

10V

8V

6V

PD = 30W

(A)

D

2.0

1.6

TC = 25°C Pulse Test

1.2

0.8 5V

0.4

DRAIN CURRENT I

0

0 4 8 12 16 20

DRAIN-SOURCE VOLTAGE VDS (V)

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS2KM-12

HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.

GATE-SOURCE VOLTAGE

(TYPICAL)

40

32

24

DS (ON) (V)

16

VOLTAGE V

8

DRAIN-SOURCE ON-STATE

0

0 4 8 12 16 20

GATE-SOURCE VOLTAGE V

TRANSFER CHARACTERISTICS

(TYPICAL)

10

8

6

4

2

DRAIN CURRENT ID (A)

TC=25°C Pulse Test

ID=3A

GS (V)

TC = 25°C VDS = 50V Pulse Test

2A

1A

ON-STATE RESISTANCE VS.

DRAIN CURRENT

(TYPICAL)

10

TC=25°C Pulse Test

8

6

DS (ON) (Ω)

4

2

RESISTANCE r

DRAIN-SOURCE ON-STATE

0

–2

2310

5710–123 5710023 5710

DRAIN CURRENT I

FORWARD TRANSFER ADMITTANCE

VS.DRAIN CURRENT

(TYPICAL)

1

10

7 5

3

fs (S)

10

2

0

TC = 25°C

7 5

3

ADMITTANCE y

FORWARD TRANSFER

125°C

2

VGS=10V

75°C

20V

D (A)

VDS = 10V Pulse Test

1

0

0 4 8 12 16 20

GATE-SOURCE VOLTAGE V

DRAIN-SOURCE VOLTAGE

7 5

3 2

2

10

7 5

3 2

CAPACITANCE

1

10

Ciss, Coss, Crss (pF)

7

Tch=25°C

5

f=1MHz

3

VGS=0V

2

23 5710

DRAIN-SOURCE VOLTAGE V

CAPACITANCE VS.

(TYPICAL)

0

23 5710

1

23 571022

GS (V)

Ciss

Coss

Crss

DS (V)

–1

10

10–123 5710

DRAIN CURRENT I

SWITCHING CHARACTERISTICS

(TYPICAL)

5

3 2

tf

2

10

7

td(off)

5

3 2

SWITCHING TIME (ns)

10

td(on)

1

tr

7 5

–1

23 5710

10

DRAIN CURRENT ID (A)

0

23 5710

D (A)

Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω

0

23 5710

1

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS2KM-12

HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE

VS.GATE CHARGE

(TYPICAL)

20

16

12

Tch = 25°C ID = 2A

V

DS

= 100V

200V

(V)

GS

400V

8

4

GATE-SOURCE VOLTAGE V

0

0 4 8 12 16 20

GATE CHARGE Q

g

(nC)

ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE

(t°C)

(25°C)

DS (ON)

10

1

7 5

VGS = 10V ID = 1/2I Pulse Test

(TYPICAL)

D

3 2

0

10

7 5

3 2

–1

10

–50

DRAIN-SOURCE ON-STATE RESISTANCE r

CHANNEL TEMPERATURE Tch (°C)

0 50 100 150

SOURCE-DRAIN DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

8

(A)

S

TC=125°C

6

4

2

SOURCE CURRENT I

0

0 0.8 1.6 2.4 3.2 4.0

SOURCE-DRAIN VOLTAGE V

THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE

(TYPICAL)

5.0 VDS = 10V

ID = 1mA

4.0

(V)

3.0

GS (th)

2.0

VOLTAGE V

1.0

GATE-SOURCE THRESHOLD

0

–50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C)

25°C

75°C

VGS = 0V Pulse Test

SD

(V)

BREAKDOWN VOLTAGE VS.

(t°C)

(25°C)

CHANNEL TEMPERATURE

(TYPICAL)

1.4

BR (DSS)

VGS = 0V ID = 1mA

1.2

1.0

0.8

0.6

0.4 –50 0 50 100 150

DRAIN-SOURCE BREAKDOWN VOLTAGE V

CHANNEL TEMPERATURE Tch (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE V

TRANSIENT THERMAL IMPEDANCE

(°C/W)

1

10

7

D=1

(ch–c)

5

th

3

0.5

2

0.2

0

10

0.1

7 5

3 2

–1

10

7 5

3 2

–2

10

–4

23 57

10

TRANSIENT THERMAL IMPEDANCE Z

CHARACTERISTICS

0.05

0.02

0.01

Single Pulse

–3

–2

23 57 23 57 23 57

10

–1

PULSE WIDTH t

P

10023 57

w

(s)

DM

tw

D=

T

tw

T

10123 57

2

10

Feb.1999