
MITSUBISHI Nch POWER MOSFET
FS2ASJ-3
HIGH-SPEED SWITCHING USE
FS2ASJ-3
¡4V DRIVE 
¡V
DSS ................................................................................150V
DS (ON) (MAX) ..............................................................0.75Ω
¡r
D ............................................................................................2A
¡I 
¡Integrated Fast Recovery Diode (TYP.)
............. 65ns
OUTLINE DRAWING Dimensions in mm
0.9MAX.
2.3
q
6.5
5.0 ± 0.2
r
1.0
1.0MAX.
2.3
2.3
qwe
wr
e
10MAX.
5.5 ± 0.2
2.3MIN. 1.5 ± 0.2
q GATE 
w DRAIN 
e SOURCE 
r DRAIN
0.5 ± 0.1
A
0.5 ± 0.2
0.8
MP-3
APPLICATION
Motor control, Lamp control, Solenoid control 
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol 
VDSS 
VGSS 
ID 
IDM 
IDA 
IS 
ISM 
PD 
Tch 
Tstg
—
Drain-source voltage 
Gate-source voltage 
Drain current 
Drain current (Pulsed) 
Avalanche drain current (Pulsed) 
Source current 
Source current (Pulsed) 
Maximum power dissipation 
Channel temperature 
Storage temperature 
Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 100µH
Typical value
150 
±20
2 
8 
2 
2 
8
20 
–55 ~ +150 
–55 ~ +150
0.26
V 
V 
A 
A 
A 
A 
A
W
°C 
°C
g
Feb.1999

ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V 
(BR) DSS
IGSS 
IDSS 
VGS (th) 
rDS (ON) 
rDS (ON) 
VDS (ON) 
yfs
iss
C 
Coss 
Crss 
td (on) 
tr 
td (off) 
tf 
VSD 
Rth (ch-c) 
trr
Drain-source breakdown voltage 
Gate-source leakage current 
Drain-source leakage current 
Gate-source threshold voltage 
Drain-source on-state resistance 
Drain-source on-state resistance 
Drain-source on-state voltage 
Forward transfer admittance 
Input capacitance 
Output capacitance 
Reverse transfer capacitance 
Turn-on delay time 
Rise time 
Turn-off delay time 
Fall time 
Source-drain voltage 
Thermal resistance 
Reverse recovery time
ID = 1mA, VGS = 0V
GS = ±20V, VDS = 0V
V
DS = 150V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 1A, VGS = 10V
I
D = 1A, VGS = 4V
I
D = 1A, VGS = 10V
I
D = 1A, VDS = 5V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 80V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω
V
S = 1A, VGS = 0V
I 
Channel to case
S = 2A, dis/dt = –100A/µs
I
MITSUBISHI Nch POWER MOSFET
FS2ASJ-3
HIGH-SPEED SWITCHING USE
Limits 
Min. Typ. Max. 
150
— 
—
1.0 
— 
— 
— 
— 
— 
— 
— 
— 
— 
— 
— 
— 
— 
—
— 
— 
—
1.5
0.58
0.61
0.58
4.5
360
62 
16 
11
9 
35 
13
1.0 
— 
65
—
±0.1
0.1
2.0
0.75
0.81
0.75 
— 
— 
— 
— 
— 
— 
— 
—
1.5
6.25 
—
V
µA
mA
V
Ω 
Ω
V
S 
pF 
pF 
pF 
ns 
ns 
ns 
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
40
 (W)
32
D
24
16
8
POWER DISSIPATION  P
0
0 20050 100 150
CASE TEMPERATURE  T
OUTPUT CHARACTERISTICS
5.0
Tc = 25°C 
Pulse Test
4.0
 (A)
D
VGS = 10V
3.0
2.0
6V 
4V
(TYPICAL)
C
 (°C)
PD = 20W
3V
MAXIMUM SAFE OPERATING AREA
2
1
10
7 
5
 (A)
3
D
2
0
10
7 
5
3 
2
–1
TC = 25°C
10
DRAIN CURRENT  I
7
Single Pulse
5 
3
2
210
1
357 2 10
DC
357 2 10
DRAIN-SOURCE VOLTAGE  V
OUTPUT CHARACTERISTICS
(TYPICAL)
2.0
Tc = 25°C 
Pulse Test
1.6
 (A)
D
1.2
0.8
tw = 10ms
100ms
1ms 
10ms
2
357
DS
VGS = 10V 
6V 
4V 
3V
 (V)
2.5V
3
2
1.0
DRAIN CURRENT  I
0
0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE  VDS (V)
2.5V
0.4
DRAIN CURRENT  I
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE  VDS (V)
Feb.1999

MITSUBISHI Nch POWER MOSFET
FS2ASJ-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
5.0
4.0
 (V)
3.0
DS (ON)
2.0
VOLTAGE  V
1.0
DRAIN-SOURCE ON-STATE
0
0246810
GATE-SOURCE VOLTAGE  V
TRANSFER CHARACTERISTICS
(TYPICAL)
10
8
 (A)
D
6
4
2
DRAIN CURRENT  I
Tc = 25°C 
Pulse Test
ID = 3A
2A
1A
GS
 (V)
Tc = 25°C
DS
 = 10V
V 
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
1.0
Tc = 25°C 
Pulse Test
0.8
 (Ω)
0.6
DS (ON)
0.4
0.2
RESISTANCE  r
DRAIN-SOURCE ON-STATE
0
–2
210
10
–1
357 2 10
DRAIN CURRENT  I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
1
10
VDS = 5V
7
Pulse Test
5 
4
(S)
3
fs
2
0
10
7 
5
4 
3
ADMITTANCE  y
FORWARD TRANSFER
TC = 25°C 
75°C 
125°C
2
VGS = 4V
10V
0
357 2 10
D
357
 (A)
1
0
0246810
GATE-SOURCE VOLTAGE  V
DRAIN-SOURCE VOLTAGE
2
Tch = 25°C
3
10
GS
 = 0V
V
7
f = 1MH
5 
3
2
2
10
7 
5
3 
2
CAPACITANCE
Ciss, Coss, Crss (pF)
1
10
7 
5
3 
2
10
DRAIN-SOURCE VOLTAGE  V
CAPACITANCE VS.
(TYPICAL)
Z
0
210
1
357357 2 10
GS
 (V)
Ciss
Coss
Crss
2
357 23
DS
 (V)
–1
10
–1
10
23457 10
DRAIN CURRENT  I
SWITCHING CHARACTERISTICS
(TYPICAL)
3
10
7 
5
3 
2
t
f
2
10
7 
5
3 
2
t
d(on)
1
10
7
t
r
5
SWITCHING TIME  (ns)
3 
2
0
10
–1
10
23457 10
DRAIN CURRENT  ID (A)
0
10
Tch = 25°C 
V 
V 
R
0
10
DD 
GS 
GEN
t
23457
D
 (A)
 = 80V 
 = 10V
 = RGS = 50Ω
d(off)
23457
1
1
Feb.1999

MITSUBISHI Nch POWER MOSFET
FS2ASJ-3
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
10
Tch = 25°C 
I
D
 = 2A
8
6
VDS = 50V
4
80V 
100V
2
GATE-SOURCE VOLTAGE  VGS (V)
0
0 4 8 12 16 20
GATE CHARGE  Q
g (nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
 (t°C)
 (25°C)
DS (ON)
DS (ON)
10
1
VGS = 10V
7
I
5
Pulse Test
4
D
 = 1/2I
(TYPICAL)
D
3 
2
0
10
7 
5
4 
3
2
–1
10
–50 0 50 100 150
DRAIN-SOURCE ON-STATE RESISTANCE  r
DRAIN-SOURCE ON-STATE RESISTANCE  r
CHANNEL TEMPERATURE  Tch (°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
VGS = 0V 
Pulse Test
8
6
4
2
SOURCE CURRENT  IS (A)
0
0 0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE  V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
4.0
VDS = 10V 
I
D
 = 1mA
3.2
2.4
GS (th) (V)
1.6
VOLTAGE  V
0.8
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE  Tch (°C)
TC = 125°C 
75°C 
25°C
SD (V)
BREAKDOWN VOLTAGE VS.
 (t°C)
 (25°C)
(BR) DSS
(BR) DSS
1.4
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V 
I
D
 = 1mA
1.2
1.0
0.8
0.6
0.4 
–50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE  V 
CHANNEL TEMPERATURE  Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE  V 
TRANSIENT THERMAL IMPEDANCE  Zth (ch–c) (°C/W)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
2
10
7 
5
3 
2
1
10
D = 1.0
7 
5
0.5
3
0.2
2
0
10
7 
5
3 
2
–1
10
–4
23 57 23 57 23 57 23 57
10
0.1
0.05
0.02
0.01 
Single Pulse
–3
10
10
–2
PULSE WIDTH  t
10
P
DM
tw
T
tw
= 
D
T
–1
10023 57
w (s)
10123 57
2
10
Feb.1999