Datasheet FS2ASJ-3 Datasheet (POWEREX)

Page 1
MITSUBISHI Nch POWER MOSFET
FS2ASJ-3
HIGH-SPEED SWITCHING USE
FS2ASJ-3
¡4V DRIVE ¡V
DSS ................................................................................150V
DS (ON) (MAX) ..............................................................0.75
¡r
D ............................................................................................2A
¡I ¡Integrated Fast Recovery Diode (TYP.)
............. 65ns
OUTLINE DRAWING Dimensions in mm
0.9MAX.
2.3
q
6.5
5.0 ± 0.2
r
1.0
1.0MAX.
2.3
2.3
qwe
wr
e
10MAX.
5.5 ± 0.2
2.3MIN. 1.5 ± 0.2
q GATE w DRAIN e SOURCE r DRAIN
0.5 ± 0.1
A
0.5 ± 0.2
0.8
MP-3
APPLICATION
MAXIMUM RATINGS (Tc = 25°C)
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg
Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 100µH
Typical value
150 ±20
2 8 2 2 8
20 –55 ~ +150 –55 ~ +150
0.26
V V A A A A A
W
°C °C
g
Feb.1999
Page 2
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs
iss
C Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr
Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
ID = 1mA, VGS = 0V
GS = ±20V, VDS = 0V
V
DS = 150V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 1A, VGS = 10V
I
D = 1A, VGS = 4V
I
D = 1A, VGS = 10V
I
D = 1A, VDS = 5V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 80V, ID = 1A, VGS = 10V, RGEN = RGS = 50
V
S = 1A, VGS = 0V
I Channel to case
S = 2A, dis/dt = –100A/µs
I
MITSUBISHI Nch POWER MOSFET
FS2ASJ-3
HIGH-SPEED SWITCHING USE
Limits Min. Typ. Max. 150
— —
1.0 — — — — — — — — — — — — — —
— — —
1.5
0.58
0.61
0.58
4.5
360
62 16 11
9 35 13
1.0 — 65
±0.1
0.1
2.0
0.75
0.81
0.75 — — — — — — — —
1.5
6.25 —
V
µA
mA
V
Ω Ω
V
S pF pF pF ns ns ns ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
40
(W)
32
D
24
16
8
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
5.0
Tc = 25°C Pulse Test
4.0
(A)
D
VGS = 10V
3.0
2.0
6V 4V
(TYPICAL)
C
(°C)
PD = 20W
3V
MAXIMUM SAFE OPERATING AREA
2
1
10
7 5
(A)
3
D
2
0
10
7 5
3 2
–1
TC = 25°C
10
DRAIN CURRENT I
7
Single Pulse
5 3
2
210
1
357 2 10
DC
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
2.0
Tc = 25°C Pulse Test
1.6
(A)
D
1.2
0.8
tw = 10ms
100ms
1ms 10ms
2
357
DS
VGS = 10V 6V 4V 3V
(V)
2.5V
3
2
1.0
DRAIN CURRENT I
0
0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
2.5V
0.4
DRAIN CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
Page 3
MITSUBISHI Nch POWER MOSFET
FS2ASJ-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
5.0
4.0
(V)
3.0
DS (ON)
2.0
VOLTAGE V
1.0
DRAIN-SOURCE ON-STATE
0
0246810
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
10
8
(A)
D
6
4
2
DRAIN CURRENT I
Tc = 25°C Pulse Test
ID = 3A
2A
1A
GS
(V)
Tc = 25°C
DS
= 10V
V Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
1.0
Tc = 25°C Pulse Test
0.8
()
0.6
DS (ON)
0.4
0.2
RESISTANCE r
DRAIN-SOURCE ON-STATE
0
–2
210
10
–1
357 2 10
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
1
10
VDS = 5V
7
Pulse Test
5 4
(S)
3
fs
2
0
10
7 5
4 3
ADMITTANCE y
FORWARD TRANSFER
TC = 25°C 75°C 125°C
2
VGS = 4V
10V
0
357 2 10
D
357
(A)
1
0
0246810
GATE-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE
2
Tch = 25°C
3
10
GS
= 0V
V
7
f = 1MH
5 3
2
2
10
7 5
3 2
CAPACITANCE
Ciss, Coss, Crss (pF)
1
10
7 5
3 2
10
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
Z
0
210
1
357357 2 10
GS
(V)
Ciss
Coss
Crss
2
357 23
DS
(V)
–1
10
–1
10
23457 10
DRAIN CURRENT I
SWITCHING CHARACTERISTICS
(TYPICAL)
3
10
7 5
3 2
t
f
2
10
7 5
3 2
t
d(on)
1
10
7
t
r
5
SWITCHING TIME (ns)
3 2
0
10
–1
10
23457 10
DRAIN CURRENT ID (A)
0
10
Tch = 25°C V V R
0
10
DD GS GEN
t
23457
D
(A)
= 80V = 10V
= RGS = 50
d(off)
23457
1
1
Feb.1999
Page 4
MITSUBISHI Nch POWER MOSFET
FS2ASJ-3
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
10
Tch = 25°C I
D
= 2A
8
6
VDS = 50V
4
80V 100V
2
GATE-SOURCE VOLTAGE VGS (V)
0
0 4 8 12 16 20
GATE CHARGE Q
g (nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
DS (ON)
DS (ON)
10
1
VGS = 10V
7
I
5
Pulse Test
4
D
= 1/2I
(TYPICAL)
D
3 2
0
10
7 5
4 3
2
–1
10
–50 0 50 100 150
DRAIN-SOURCE ON-STATE RESISTANCE r
DRAIN-SOURCE ON-STATE RESISTANCE r
CHANNEL TEMPERATURE Tch (°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
VGS = 0V Pulse Test
8
6
4
2
SOURCE CURRENT IS (A)
0
0 0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
4.0
VDS = 10V I
D
= 1mA
3.2
2.4
GS (th) (V)
1.6
VOLTAGE V
0.8
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
TC = 125°C 75°C 25°C
SD (V)
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
(BR) DSS
(BR) DSS
1.4
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V I
D
= 1mA
1.2
1.0
0.8
0.6
0.4 –50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
2
10
7 5
3 2
1
10
D = 1.0
7 5
0.5
3
0.2
2
0
10
7 5
3 2
–1
10
–4
23 57 23 57 23 57 23 57
10
0.1
0.05
0.02
0.01 Single Pulse
–3
10
10
–2
PULSE WIDTH t
10
P
DM
tw
T
tw
=
D
T
–1
10023 57
w (s)
10123 57
2
10
Feb.1999
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