Datasheet FS2ASJ-3 Datasheet (POWEREX)

MITSUBISHI Nch POWER MOSFET

FS2ASJ-3

HIGH-SPEED SWITCHING USE

FS2ASJ-3

¡4V DRIVE ¡V

DSS ................................................................................150V

DS (ON) (MAX) ..............................................................0.75Ω

¡r

D ............................................................................................2A

¡I ¡Integrated Fast Recovery Diode (TYP.)

............. 65ns

OUTLINE DRAWING Dimensions in mm

0.9MAX.

2.3

q

6.5

5.0 ± 0.2

r

1.0

1.0MAX.

2.3

qwe

wr

e

10MAX.

5.5 ± 0.2

2.3MIN. 1.5 ± 0.2

q GATE w DRAIN e SOURCE r DRAIN

0.5 ± 0.1

A

0.5 ± 0.2

0.8

MP-3

APPLICATION

Motor control, Lamp control, Solenoid control DC-DC converter, etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg

—

Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight

Parameter Conditions Ratings Unit

GS = 0V

V

DS = 0V

V

L = 100µH

Typical value

150 ±20

2 8 2 2 8

20 –55 ~ +150 –55 ~ +150

0.26

V V A A A A A

W

°C °C

g

Feb.1999

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Symbol UnitParameter Test conditions

V

(BR) DSS

IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs

iss

C Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr

Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time

ID = 1mA, VGS = 0V

GS = ±20V, VDS = 0V

V

DS = 150V, VGS = 0V

V

D = 1mA, VDS = 10V

I

D = 1A, VGS = 10V

I

D = 1A, VGS = 4V

I

D = 1A, VGS = 10V

I

D = 1A, VDS = 5V

I

V

DS = 10V, VGS = 0V, f = 1MHz

DD = 80V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω

V

S = 1A, VGS = 0V

I Channel to case

S = 2A, dis/dt = –100A/µs

I

MITSUBISHI Nch POWER MOSFET

FS2ASJ-3

HIGH-SPEED SWITCHING USE

Limits Min. Typ. Max. 150

— —

1.0 — — — — — — — — — — — — — —

— — —

1.5

0.58

0.61

0.58

4.5

360

62 16 11

9 35 13

1.0 — 65

—

±0.1

0.1

2.0

0.75

0.81

0.75 — — — — — — — —

1.5

6.25 —

V

µA

mA

V

Ω Ω

V

S pF pF pF ns ns ns ns

V

°C/W

ns

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE

40

(W)

32

D

24

16

8

POWER DISSIPATION P

0

0 20050 100 150

CASE TEMPERATURE T

OUTPUT CHARACTERISTICS

5.0

Tc = 25°C Pulse Test

4.0

(A)

D

VGS = 10V

3.0

2.0

6V 4V

(TYPICAL)

C

(°C)

PD = 20W

3V

MAXIMUM SAFE OPERATING AREA

2

1

10

7 5

(A)

3

D

2

0

10

7 5

3 2

–1

TC = 25°C

10

DRAIN CURRENT I

7

Single Pulse

5 3

2

210

1

357 2 10

DC

357 2 10

DRAIN-SOURCE VOLTAGE V

OUTPUT CHARACTERISTICS

(TYPICAL)

2.0

Tc = 25°C Pulse Test

1.6

(A)

D

1.2

0.8

tw = 10ms

100ms

1ms 10ms

2

357

DS

VGS = 10V 6V 4V 3V

(V)

2.5V

3

2

1.0

DRAIN CURRENT I

0

0 1.0 2.0 3.0 4.0 5.0

DRAIN-SOURCE VOLTAGE VDS (V)

2.5V

0.4

DRAIN CURRENT I

0

0 0.4 0.8 1.2 1.6 2.0

DRAIN-SOURCE VOLTAGE VDS (V)

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS2ASJ-3

HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.

GATE-SOURCE VOLTAGE

(TYPICAL)

5.0

4.0

(V)

3.0

DS (ON)

2.0

VOLTAGE V

1.0

DRAIN-SOURCE ON-STATE

0

0246810

GATE-SOURCE VOLTAGE V

TRANSFER CHARACTERISTICS

(TYPICAL)

10

8

(A)

D

6

4

2

DRAIN CURRENT I

Tc = 25°C Pulse Test

ID = 3A

2A

1A

GS

(V)

Tc = 25°C

DS

= 10V

V Pulse Test

ON-STATE RESISTANCE VS.

DRAIN CURRENT

(TYPICAL)

1.0

Tc = 25°C Pulse Test

0.8

(Ω)

0.6

DS (ON)

0.4

0.2

RESISTANCE r

DRAIN-SOURCE ON-STATE

0

–2

210

10

–1

357 2 10

DRAIN CURRENT I

FORWARD TRANSFER ADMITTANCE

VS.DRAIN CURRENT

(TYPICAL)

1

10

VDS = 5V

7

Pulse Test

5 4

(S)

3



fs

2

0

10

7 5

4 3

ADMITTANCE y

FORWARD TRANSFER

TC = 25°C 75°C 125°C

2

VGS = 4V

10V

0

357 2 10

D

357

(A)

1

0

0246810

GATE-SOURCE VOLTAGE V

DRAIN-SOURCE VOLTAGE

2

Tch = 25°C

3

10

GS

= 0V

V

7

f = 1MH

5 3

2

10

7 5

3 2

CAPACITANCE

Ciss, Coss, Crss (pF)

1

10

7 5

3 2

10

DRAIN-SOURCE VOLTAGE V

CAPACITANCE VS.

(TYPICAL)

Z

0

210

1

357357 2 10

GS

(V)

Ciss

Coss

Crss

2

357 23

DS

(V)

–1

10

–1

10

23457 10

DRAIN CURRENT I

SWITCHING CHARACTERISTICS

(TYPICAL)

3

10

7 5

3 2

t

f

2

10

7 5

3 2

t

d(on)

1

10

7

t

r

5

SWITCHING TIME (ns)

3 2

0

10

–1

10

23457 10

DRAIN CURRENT ID (A)

0

10

Tch = 25°C V V R

0

10

DD GS GEN

t

23457

D

(A)

= 80V = 10V

= RGS = 50Ω

d(off)

23457

1

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS2ASJ-3

HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE

VS.GATE CHARGE

(TYPICAL)

10

Tch = 25°C I

D

= 2A

8

6

VDS = 50V

4

80V 100V

2

GATE-SOURCE VOLTAGE VGS (V)

0

0 4 8 12 16 20

GATE CHARGE Q

g (nC)

ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE

(t°C)

(25°C)

DS (ON)

10

1

VGS = 10V

7

I

5

Pulse Test

4

D

= 1/2I

(TYPICAL)

D

3 2

0

10

7 5

4 3

2

–1

10

–50 0 50 100 150

DRAIN-SOURCE ON-STATE RESISTANCE r

CHANNEL TEMPERATURE Tch (°C)

SOURCE-DRAIN DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

VGS = 0V Pulse Test

8

6

4

2

SOURCE CURRENT IS (A)

0

0 0.4 0.8 1.2 1.6 2.0

SOURCE-DRAIN VOLTAGE V

THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE

(TYPICAL)

4.0

VDS = 10V I

D

= 1mA

3.2

2.4

GS (th) (V)

1.6

VOLTAGE V

0.8

GATE-SOURCE THRESHOLD

0

–50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C)

TC = 125°C 75°C 25°C

SD (V)

BREAKDOWN VOLTAGE VS.

(t°C)

(25°C)

(BR) DSS

1.4

CHANNEL TEMPERATURE

(TYPICAL)

VGS = 0V I

D

= 1mA

1.2

1.0

0.8

0.6

0.4 –50 0 50 100 150

DRAIN-SOURCE BREAKDOWN VOLTAGE V

CHANNEL TEMPERATURE Tch (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE V

TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTICS

2

10

7 5

3 2

1

10

D = 1.0

7 5

0.5

3

0.2

2

0

10

7 5

3 2

–1

10

–4

23 57 23 57 23 57 23 57

10

0.1

0.05

0.02

0.01 Single Pulse

–3

10

–2

PULSE WIDTH t

10

P

DM

tw

T

tw

=

D

T

–1

10023 57

w (s)

10123 57

2

10

Feb.1999