Page 1
MITSUBISHI Nch POWER MOSFET
FS16SM-6
HIGH-SPEED SWITCHING USE
FS16SM-6
¡VDSS ................................................................................ 300V
¡r
DS (ON) (MAX) .............................................................. 0.33Ω
¡I
D ..........................................................................................16A
OUTLINE DRAWING Dimensions in mm
4.5
1.5
4.4
0.6 2.8
2
1.0
5.45
q
15.9MAX.
r
φ 3.2
qwe
5.45
4
wr
e
5.0
2
4
q GATE
w DRAIN
e SOURCE
r DRAIN
20.0
19.5MIN.
TO-3P
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
Typical value
300
±30
16
48
125
–55 ~ +150
–55 ~ +150
4.8
V
V
A
A
W
°C
°C
g
Feb.1999
Page 2
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 300V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 8A, VGS = 10V
ID = 8A, VGS = 10V
ID = 8A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 8A, VGS = 10V, RGEN = RGS = 50Ω
IS = 8A, VGS = 0V
Channel to case
MITSUBISHI Nch POWER MOSFET
FS16SM-6
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
300
±30
—
—
2
—
—
6.5
—
—
—
—
—
—
—
—
—
—
—
—
—
3
0.25
2.0
10.0
1050
220
45
20
40
110
50
1.5
—
—
—
±10
0.33
2.64
—
—
—
—
—
—
—
—
2.0
1.00
V
V
µA
mA
1
V
4
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
(W)
160
D
120
80
40
POWER DISSIPATION P
0
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
50
PD =
125W
40
(A)
D
30
(TYPICAL)
V
GS
= 20V
10V
8V
TC = 25°C
Pulse Test
7V
C
(°C)
MAXIMUM SAFE OPERATING AREA
2
10
7
5
3
2
(A)
D
1
10
7
5
3
2
0
10
7
5
DRAIN CURRENT I
200150100500
TC = 25°C
3
Single Pulse
2
–1
10
23 5710123 5710223 571032
DRAIN-SOURCE VOLTAGE V
tw=10µs
100µs
1ms
10ms
DC
DS
(V)
OUTPUT CHARACTERISTICS
7V
(TYPICAL)
PD = 125W
TC = 25°C
Pulse Test
5.5V
6V
(A)
D
VGS=20V
20
16
12
10V
20
10
DRAIN CURRENT I
0
0 1020304050
DRAIN-SOURCE VOLTAGE VDS (V)
6V
5V
8
4
DRAIN CURRENT I
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
5V
4.5V
4V
Feb.1999
Page 3
MITSUBISHI Nch POWER MOSFET
FS16SM-6
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
20
16
(V)
12
DS (ON)
8
VOLTAGE V
4
DRAIN-SOURCE ON-STATE
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
40
32
(A)
D
24
16
8
DRAIN CURRENT I
0
0 4 8 12 16 20
TC = 25°C
Pulse Test
ID = 30A
GS
TC = 25°C
VDS = 50V
Pulse Test
16A
8A
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.5
TC = 25°C
Pulse Test
0.4
(Ω)
0.3
DS (ON)
0.2
0.1
RESISTANCE r
DRAIN-SOURCE ON-STATE
0
–1
5710023 5710123 5710
2310
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
1
10
7
5
(S)
3
fs
2
0
10
7
5
3
ADMITTANCE y
FORWARD TRANSFER
2
–1
10
0
23 5710
10
V
GS
= 10V
D
(A)
TC = 25°C
75°C
125°C
V
DS
Pulse Test
1
23 5710
20V
2
= 10V
2
GATE-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE
5
3
2
3
10
7
5
3
2
2
10
CAPACITANCE
7
5
Ciss, Coss, Crss (pF)
3
Tch = 25°C
2
f = 1MHz
GS
= 0V
V
1
10
23 5710
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
0
23 5710
1
23 5710
GS
Ciss
Coss
Crss
DS
(V)
2
(V)
23
DRAIN CURRENT I
SWITCHING CHARACTERISTICS
(TYPICAL)
3
10
7
5
3
2
t
d(off)
10
2
7
t
5
3
SWITCHING TIME (ns)
2
1
10
0
10
f
t
r
t
d(on)
23 5710
DRAIN CURRENT ID (A)
D
Tch = 25°C
VDD = 150V
VGS = 10V
GEN
= R
R
GS
1
23 5710
(A)
= 50Ω
2
Feb.1999
Page 4
MITSUBISHI Nch POWER MOSFET
FS16SM-6
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
16
12
Tch = 25°C
ID = 16A
V
DS
100V
= 50V
(V)
GS
200V
8
4
GATE-SOURCE VOLTAGE V
0
0 20406080100
GATE CHARGE Q
g
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
DS (ON)
DS (ON)
10
1
7
5
VGS = 10V
ID = 1/2I
Pulse Test
(TYPICAL)
D
3
2
0
10
7
5
3
2
–1
10
–50
DRAIN-SOURCE ON-STATE RESISTANCE r
DRAIN-SOURCE ON-STATE RESISTANCE r
CHANNEL TEMPERATURE Tch (°C)
0 50 100 150
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
TC = 125°C
32
(A)
S
24
16
8
SOURCE CURRENT I
0
0 0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V
ID = 1mA
4.0
(V)
3.0
GS (th)
2.0
VOLTAGE V
1.0
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
VGS = 0V
Pulse Test
25°C
75°C
SD
(V)
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
CHANNEL TEMPERATURE
(TYPICAL)
1.4
(BR) DSS
(BR) DSS
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
1
10
7
(ch–c)
5
th
3
2
D=1
0
10
7
0.5
5
0.2
3
2
0.1
–1
10
7
5
3
2
–2
10
–4
23 57
10
10
TRANSIENT THERMAL IMPEDANCE Z
CHARACTERISTICS
0.05
0.02
0.01
Single Pulse
–3
–2
23 57 23 57 23 57
10
10
–1
PULSE WIDTH t
P
10023 57
w
(s)
DM
tw
D=
T
tw
T
10123 57
Feb.1999
10
2
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