Page 1
On-State Current
16 Amp
FS16...H
STANDARD SCR
These series of Silicon Controlled
R ectifier use a high performance
PNPN technology.
These parts are intended for general
purpose high current applications where
moderate gate insensitivity is required.
Dec - 02
Absolute Maximum Ratings, according to IEC publication No. 134
On-state Current
Average On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Reverse Gate Voltage
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
I
T(RMS)
PARAMETER CONDITIONS Min. Max. Unit
Gate Trigger Current
> 2 mA to < 40 mA
Off-State Voltage
200 V ÷ 600 V
SYMBOL
I
T(AV)
I
TSM
I
TSM
I2t
V
GRM
I
GM
P
GM
P
G(AV)
T
j
T
stg
T
sld
180º Conduction Angle, Tc = 110 ºC
Half Cycle, Θ = 180 º, T
C
= 110 ºC
Half Cycle, 60 Hz
Half Cycle, 50 Hz
t
p
= 10ms, Half Cycle
I
GR
= 10 µA
20 µs max.
20 µs max.
20ms max.
10s max.
-40
-40
A
A
A
A
A
2
s
V
A
W
W
ºC
ºC
ºC
16
10
200
190
180
5
4
10
1
+125
+150
260
TO220-AB
K
A
G
Repetitive Peak Off State
Voltage
PARAMETER CONDITIONS VOLTAGE UnitSYMBOL
V
DRM
V
RRM
R
GK
= 1 KΩ
B
200 V
D
400
M
600
Page 2
FS16...H
STANDARD SCR
Dec - 02
Electrical Characteristics
Gate Trigger Current
Off-State Leakage Current
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
PARAMETER CONDITIONS SENSITIVITY
Unit
SYMBOL
I
GT
I
DRM
VD = 12 V
DC
, R
L
= 33Ω. T
j
= 25 ºC
mA
10
2
25
2
5
1.6
1.3
0.2
mA
µA
V
V
V
MIN
MAX
MAX
MAX
MAX
MAX
MIN
50
60
MAX
/ I
RRM
V
TM
V
GT
V
GD
I
H
di / dt
R
th(j-a)
Critical Rate of Current Rise
Thermal Resistance
Junction-Amb
ºC/W
V
D
= V
DRM
, R
GK
= 220Ω T
j
= 125 ºC
T
j
= 25 ºC
V
R
= V
RRM
,
at IT = 32 Amp, tp = 380 µs, Tj = 25 ºC
IT = 500 mA , Gate open,
PART NUMBER INFORMATION
VD = 12 V
DC
, R
L
= 33Ω, T
j
= 25 ºC
V
D
= V
DRM
, R
L
= 3.3KΩ
T
j
= 125 ºC
mA
MIN
A/µs
FAGOR
SCR
CURRENT
CASE
VOLTAGE
SENSITIVITY
F S 16 10 B H 00
FORMING
TU
PACKAGING
R
d
T
j
= 125 ºC
R
d
Dynamic resistance MAX
23
mΩ
14
4
40
40
MAX
I
L
mA60
Latching Current
I
G
= 1.2 I
GT
V/µs
dv / dt
Critical Rate of Voltage Rise VD = 0.67 x V
DRM
, Gate open MIN
500
1.1
R
th(j-c)
Thermal Resistance
Junction-Case for DC
ºC/W
V
t0
T
j
= 125 ºC
Threshold Voltage MAX
0.77
V
Tr ≤ 100 ns, F = 60 Hz,
T
j
= 125 ºC
I
G
= 2 x I
GT
Tj = 25 ºC
T
j
= 125 ºC
50
90
1000
Page 3
Dec - 02
FS16...H
STANDARD SCR
1.0
K = [Zth(j-c) / Rth (j-c)]
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
1E-3 1E-2 1E-1 1E+0
tp (s)
0.5
0.2
0.1
I
T(av)
(A)
Fig. 1: Maximum average power dissipation
versus average on-state current.
0 25 50 75 100 125
Fig. 2: Average and D.C. on-state current
versus case temperature.
P (W)
Tc (ºC)
I
T(av)
(A)
0 2 4 6 8
0
2
4
6
8
10
12
14
16
0
4
8
12
16
1 3 5 7 9
2
6
10
14
18
10
IGT, I
H, IL
(Tj) / IGR, I
H, IL
(Tj = 25 ºC)
Fig. 4: Relative variation of gate trigger
current , holding current and latching
current versus junction temperature.
Tj (ºC)
2.5
2.0
1.5
1.0
0.5
0.0
-40 -20 20 60 80 1000 40 120 140
IGT
1 10 100 1000
Fig. 5: Surge peak on-state current versus
number of cycles.
200
150
100
50
0
I
TSM
(A)
Number of cycles
1000
I
TSM
(A). I2t (A2s)
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp < 10 ms, and corresponding value of I
2
t.
tp(ms)
100
10
I
TSM
I2 t
Tj initial = 25 ºC
1 10
IH & IL
Page 4
Dec - 02
FS16...H
STANDARD SCR
PACKAGE MECHANICAL DATA
TO-220AB
A
a1
a2
B
b1
b2
C
c1
c2
e
F
I
I4
L
I2
I3
M
REF.
DIMENSIONS
Milimeters
Min. Nominal Max.
15.20
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.75
15.80
2.65
1.14
1.14
3.75
16.40
2.60
15.90
14.00
10.40
0.88
1.32
4.60
0.70
2.72
2.70
6.60
3.85
16.80
2.95
1.70
1.70
14
a1
L
A
e
a2
b1
12
13
øI
B
c
F
b2
c2
c1
M
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Fig. 8: On-state characteristics (maximum
values).
ITM(A)
4.0
1000
VTM(V)
4.5
100
10
1
5.0
Tj = 25 ºC
Tj = Tj max.
Tj max
Vto = 0.77 V
Rt = 23 mΩ
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