Datasheet FS14KM-10 Datasheet (POWEREX)

MITSUBISHI Nch POWER MOSFET

FS14KM-10

HIGH-SPEED SWITCHING USE

FS14KM-10

¡VDSS ................................................................................ 500V

¡r

DS (ON) (MAX) .............................................................. 0.64Ω

¡I

D ..........................................................................................14A

¡V

iso ................................................................................ 2000V

OUTLINE DRAWING Dimensions in mm

10 ± 0.3 2.8 ± 0.2

3 ± 0.33.6 ± 0.3

15 ± 0.314 ± 0.5

123

w

q

e

6.5 ± 0.3

φ 3.2 ± 0.2

1.1 ± 0.2

0.75 ± 0.15

2.54 ± 0.252.54 ± 0.25

2.6 ± 0.2

q GATE w DRAIN e SOURCE

0.75 ± 0.15

4.5 ± 0.2

TO-220FN

APPLICATION

SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol VDSS VGSS ID IDM PD Tch Tstg Viso

—

Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight

Parameter Conditions Ratings Unit

VGS = 0V VDS = 0V

AC for 1minute, Terminal to case Typical value

500 ±30

14 42

40 –55 ~ +150 –55 ~ +150

2000

2.0

V V A A

W

°C °C

Vrms

g

Feb.1999

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Symbol UnitParameter Test conditions

V

(BR) DSS

V

(BR) GSS

IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c)

Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance

ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V , VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 10V ID = 7A, VGS = 10V ID = 7A, VDS = 10V

VDS = 25V, VGS = 0V, f = 1MHz

VDD = 200V, ID = 7A, VGS = 10V, RGEN = RGS = 50Ω

IS = 7A, VGS = 0V Channel to case

MITSUBISHI Nch POWER MOSFET

FS14KM-10

HIGH-SPEED SWITCHING USE

Limits

Min. Typ. Max.

500 ±30

— —

2 — —

4.5 — — — — — — — — —

— — — —

3

0.50

3.5

7.0

1500

180

30 30 50

130

50

1.5 —

— —

±10

0.64

4.5 — — — — — — — —

2.0

3.13

V V

µA

mA

1

V

4

Ω

V

S pF pF pF

ns ns ns ns

V

°C/W

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE

50

40

30

20

10

POWER DISSIPATION PD (W)

0

CASE TEMPERATURE T

OUTPUT CHARACTERISTICS

50

PD = 40W

40

30

(TYPICAL)

C (°C)

TC = 25°C Pulse Test

VGS = 20V

MAXIMUM SAFE OPERATING AREA

5 3

2

1

10

7 5

3 2

0

10

7 5

3

TC = 25°C

2

DRAIN CURRENT ID (A)

200150100500

–1

10

7 5

23 5710

Single Pulse

1

23 5710223 5710

DRAIN-SOURCE VOLTAGE V

tw=10µs

100µs

1ms

10ms

DC

3

2

DS (V)

OUTPUT CHARACTERISTICS

(TYPICAL)

VGS=20V

10V

8V

6V

10V

8V

20

16

12

PD = 40W

20

10

DRAIN CURRENT ID (A)

0

0 1020304050

DRAIN-SOURCE VOLTAGE VDS (V)

6V

5V

8

4

DRAIN CURRENT ID (A)

0

0 4 8 12 16 20

DRAIN-SOURCE VOLTAGE VDS (V)

5V

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS14KM-10

HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.

GATE-SOURCE VOLTAGE

(TYPICAL)

40

32

(V)

24

DS (ON)

16

VOLTAGE V

8

DRAIN-SOURCE ON-STATE

0

0 4 8 12 16 20

GATE-SOURCE VOLTAGE V

TRANSFER CHARACTERISTICS

(TYPICAL)

40

32

(A)

D

24

16

8

DRAIN CURRENT I

0

0 4 8 12 16 20

TC = 25°C Pulse Test

ID = 25A

20A

14A

GS

(V)

TC = 25°C

DS

= 50V

V Pulse Test

7A

ON-STATE RESISTANCE VS.

DRAIN CURRENT

(TYPICAL)

2.0 TC = 25°C Pulse Test

1.6

(Ω)

1.2

DS (ON)

0.8

0.4

RESISTANCE r

DRAIN-SOURCE ON-STATE

0

–1

5710023 5710123 5710

2310

DRAIN CURRENT I

FORWARD TRANSFER ADMITTANCE

VS.DRAIN CURRENT

(TYPICAL)

2

10

7 5

(S)

3



fs

2

1

10

125°C

7 5

3

ADMITTANCE y

FORWARD TRANSFER

2

0

10

10023 5710

V

GS

TC = 25°C

75°C

1

23 5710

= 10V

20V

D

(A)

V

DS

= 10V

Pulse Test

2

GATE-SOURCE VOLTAGE V

DRAIN-SOURCE VOLTAGE

5

3 2

3

10

7 5

3 2

2

10

CAPACITANCE

7 5

Ciss, Coss, Crss (pF)

3

Tch = 25°C

2

f = 1MHz

GS

= 0V

V

1

10

23 5710

DRAIN-SOURCE VOLTAGE V

CAPACITANCE VS.

(TYPICAL)

0

23 5710

1

23 5710

GS

Ciss

Coss

Crss

DS

(V)

2

(V)

23

DRAIN CURRENT I

SWITCHING CHARACTERISTICS

(TYPICAL)

3

10

7 5

3

10

2

t

d(off)

7

t

5

3

SWITCHING TIME (ns)

2

1

10

f

t

r

t

d(on)

0

23 5710

DRAIN CURRENT ID (A)

D

Tch = 25°C VDD = 200V

GS

= 10V

V R

GEN

= R

GS

1

23 5710

(A)

= 50Ω

2

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS14KM-10

HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE

VS.GATE CHARGE

(TYPICAL)

20

16

Tch = 25°C ID = 14A

V

DS

= 100V

(V)

GS

200V

12

400V

8

4

GATE-SOURCE VOLTAGE V

0

0 20406080100

GATE CHARGE Q

g

(nC)

ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE

(t°C)

(25°C)

DS (ON)

10

1

7 5

VGS = 10V ID = 1/2I Pulse Test

(TYPICAL)

D

3 2

0

10

7 5

3 2

–1

10

–50

DRAIN-SOURCE ON-STATE RESISTANCE r

CHANNEL TEMPERATURE Tch (°C)

0 50 100 150

SOURCE-DRAIN DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

40

TC=125°C

32

(A)

S

24

16

8

SOURCE CURRENT I

0

0 0.8 1.6 2.4 3.2 4.0

SOURCE-DRAIN VOLTAGE V

THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE

(TYPICAL)

5.0

VDS = 10V ID = 1mA

4.0

(V)

3.0

GS (th)

2.0

VOLTAGE V

1.0

GATE-SOURCE THRESHOLD

0

–50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C)

25°C

75°C

VGS = 0V Pulse Test

SD

(V)

BREAKDOWN VOLTAGE VS.

(t°C)

(25°C)

CHANNEL TEMPERATURE

(TYPICAL)

1.4

BR (DSS)

VGS = 0V ID = 1mA

1.2

1.0

0.8

0.6

0.4 –50 0 50 100 150

DRAIN-SOURCE BREAKDOWN VOLTAGE V

CHANNEL TEMPERATURE Tch (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE V

TRANSIENT THERMAL IMPEDANCE

(°C/W)

1

10

7

(ch–c)

5

D=1

th

3

0.5

2

0

10

0.2

7 5

0.1

3 2

–1

10

7 5

3 2

–2

10

–4

23 57

10

TRANSIENT THERMAL IMPEDANCE Z

CHARACTERISTICS

0.05

0.02

0.01

Single Pulse

–3

–2

23 57 23 57 23 57

10

–1

PULSE WIDTH t

P

10023 57

w

(s)

DM

tw

D=

T

tw

T

10123 57

Feb.1999

10

2