Page 1
MITSUBISHI Nch POWER MOSFET
FS12KMA-4A
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
HIGH-SPEED SWITCHING USE
FS12KMA-4A
● 10V DRIVE
DSS ............................................................................... 200V
● V
● r
DS (ON) (MAX) ............................................................. 0.40Ω
D.........................................................................................12A
● I
OUTLINE DRAWING Dimensions in mm
10 ± 0.3 2.8 ± 0.2
3 ± 0.33.6 ± 0.3
15 ± 0.314 ± 0.5
➀➁➂
➁
➀
➂
6.5 ± 0.3
φ 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
GATE
➀
➁
DRAIN
➂
SOURCE
0.75 ± 0.15
4.5 ± 0.2
TO-220FN
APPLICATION
CS Switch for CRT Display monitor, Switch mode
power supply, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
PD
Tch
Tstg
Viso
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
L = 200µH
AC for 1minute, Terminal to case
Typical value
200
±20
12
36
12
32
–55 ~ +150
–55 ~ +150
2000
2.0
V
V
A
A
A
W
°C
°C
V
g
Sep.1998
Page 2
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
I
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
D = 1mA, VGS = 0V
IGS = ±10µA, VDS = 0V
VGS = ±20V, VDS = 0V
VDS = 200V , VGS = 0V
ID = 1mA, VDS = 10V
ID = 6A, VGS = 10V
ID = 6A, VGS = 10V
ID = 6A, VDS = 10V
VDS = 25V , VGS = 0V, f = 1MHz
VDD = 100V, ID = 6A, VGS = 10V, RGEN = RGS = 50Ω
IS = 6A, VGS = 0V
Channel to case
MITSUBISHI Nch POWER MOSFET
FS12KMA-4A
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
200
±20
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
0.30
1.80
8.0
700
95
30
15
20
110
35
0.95
—
—
±10
4.0
0.40
2.40
—
—
—
—
—
—
—
—
—
3.91
V
V
µA
mA
1
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
40
32
24
16
8
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
20
16
12
(TYPICAL)
10V
8V
6V
VGS = 20V
C (°C)
5V
MAXIMUM SAFE OPERATING AREA
5
3
2
1
10
7
5
3
2
0
10
7
5
3
2
DRAIN CURRENT ID (A)
TC = 25°C
–1
10
Single Pulse
7
5
2
1
10
357 2 10
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
10
8
VGS = 20V
10V
8V
6
tw = 10µs
100µs
1ms
10ms
DC
2
357
PD = 32W
DS (V)
4.5V
3
2
8
4
DRAIN CURRENT ID (A)
0
0 4 8 12 16 20
PD = 32W
DRAIN-SOURCE VOLTAGE VDS (V)
TC = 25°C
Pulse Test
4V
4
4.0V
2
DRAIN CURRENT ID (A)
TC = 25°C
0
0246810
Pulse Test
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998
Page 3
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI Nch POWER MOSFET
FS12KMA-4A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
20
16
(V)
12
DS (ON)
8
VOLTAGE V
4
DRAIN-SOURCE ON-STATE
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
20
16
(A)
D
12
8
4
DRAIN CURRENT I
0
0 4 8 12 16 20
TC = 25°C
Pulse Test
ID = 18A
12A
6A
GS
(V)
TC = 25°C
V
DS
= 10V
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.5
TC = 25°C
Pulse Test
0.4
(Ω)
0.3
DS (ON)
0.2
0.1
RESISTANCE r
DRAIN-SOURCE ON-STATE
0
–1
10
VGS = 10V
2
10
357 2
20V
0
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
5
4
3
TC = 25°C
2
(S)
fs
1
10
7
5
4
3
2
ADMITTANCE y
FORWARD TRANSFER
0
10
7
5
10
75°C
125°C
0
23457 23457
1
10
357 2
D
(A)
1
10
357
VDS = 10V
Pulse Test
10
10
2
2
GATE-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE
4
10
7
5
3
2
3
10
7
5
3
2
2
10
CAPACITANCE
7
Ciss, Coss, Crss (pF)
5
TCh = 25°C
3
f = 1MH
2
V
GS
= 0V
1
10
0
10
23457
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
Z
1
10
GS
(V)
Ciss
Coss
Crss
23457
DS
(V)
10
DRAIN CURRENT I
D
(A)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
t
d(off)
2
10
7
5
t
f
4
3
2
t
r
1
t
d(on)
10
7
SWITCHING TIME (ns)
2
TCh = 25°C
5
V
DD
= 100V
4
V
GS
= 10V
3
R
GEN
2
= RGS = 50Ω
0
10
23457 23457
10
1
10
2
DRAIN CURRENT ID (A)
Sep.1998
Page 4
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI Nch POWER MOSFET
FS12KMA-4A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
20
TCh = 25°C
I
D
(V)
GS
= 12A
16
12
VDS = 50V
8
100V
150V
4
GATE-SOURCE VOLTAGE V
0
0 20406080100
GATE CHARGE Q
g
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
1
10
VGS = 10V
7
DS (ON)
DRAIN-SOURCE ON-STATE RESISTANCE r
I
D
DS (ON)
DRAIN-SOURCE ON-STATE RESISTANCE r
= 6A
5
Pulse Test
3
2
0
10
7
5
3
2
–1
10
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
(A)
S
12
8
4
SOURCE CURRENT I
0
0 0.8 1.6 2.4 3.2 4.0
TC = 125°C
75°C
25°C
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V
I
D
= 1mA
4.0
(V)
3.0
GS (th)
2.0
VOLTAGE V
1.0
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
VGS = 0V
Pulse Test
SD
(V)
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
(BR) DSS
(BR) DSS
1.4
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V
I
D
= 1mA
1.2
1.0
0.8
0.6
0.4
–50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
1
10
7
D = 1.0
(ch–c)
5
th
3
0.5
2
0.2
0
10
7
0.1
5
3
10
10
2
–1
7
5
3
2
–2
10
0.05
0.02
0.01
Single Pulse
–4
23 57 23 57 23 57 23 57
10
TRANSIENT THERMAL IMPEDANCE Z
CHARACTERISTICS
–3
10
–2
PULSE WIDTH t
10
–1
P
DM
tw
T
tw
D
=
T
0
10
w
(s)
23 57
10
1
23 57
10
2
Sep.1998
Loading...