Page 1
MITSUBISHI Nch POWER MOSFET
FS10VSJ-2
HIGH-SPEED SWITCHING USE
FS10VSJ-2
¡4V DRIVE
¡V
DSS ............................................................................... 100V
DS (ON) (MAX) ............................................................. 0.19Ω
¡r
D ........................................................................................ 10A
¡I
¡Integrated Fast Recovery Diode (TYP.)
............ 95ns
OUTLINE DRAWING Dimensions in mm
+0.3
3.0
–0.5
q
10.5MAX.
1
qwe
5
wr
e
0.8
1.5MAX.
8.6 ± 0.3
1.5MAX.
2.6 ± 0.4
q GATE
w DRAIN
e SOURCE
r DRAIN
r
4.5
9.8 ± 0.5
B
4.5
0.5
1.3
+0.3
0
–0
TO-220S
(1.5)
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 100µH
Typical value
100
±20
10
40
10
10
40
30
–55 ~ +150
–55 ~ +150
1.2
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999
Page 2
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
GS = ±20V, VDS = 0V
V
DS = 100V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 5A, VGS = 10V
I
D = 5A, VGS = 4V
I
D = 5A, VGS = 10V
I
D = 5A, VDS = 5V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 50V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
V
S = 5A, VGS = 0V
I
Channel to case
S = 10A, dis/dt = –100A/µs
I
MITSUBISHI Nch POWER MOSFET
FS10VSJ-2
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
100
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
0.14
0.16
0.70
13
800
125
45
14
15
65
40
1.0
—
95
—
±0.1
0.1
2.0
0.19
0.21
0.95
—
—
—
—
—
—
—
—
1.5
4.17
—
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
(W)
40
D
30
20
10
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
20
TC = 25°C
Pulse Test
16
(A)
D
12
8
(TYPICAL)
VGS = 10V
C
5V6V
(°C)
4V
3V
MAXIMUM SAFE OPERATING AREA
3
2
1
10
(A)
D
7
5
3
2
0
10
7
5
3
TC = 25°C
2
DRAIN CURRENT I
Single Pulse
–1
10
7
5
210
357 2 10
0
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 10V
(A)
D
10
8
TC = 25°C
Pulse Test
6
4
1
35752
tw = 10ms
100ms
1ms
10ms
DC
2
DS
(V)
5V4V6V
3V
2.5V
4
DRAIN CURRENT I
0
0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
PD = 30W
2
DRAIN CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
2V
Feb.1999
Page 3
MITSUBISHI Nch POWER MOSFET
FS10VSJ-2
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
5.0
4.0
(V)
3.0
DS (ON)
2.0
VOLTAGE V
1.0
DRAIN-SOURCE ON-STATE
0
0246810
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
20
16
(A)
D
12
8
4
DRAIN CURRENT I
TC = 25°C
Pulse Test
ID = 15A
10A
GS
(V)
Tc = 25°C
DS
= 10V
V
Pulse Test
5A
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.5
0.4
(Ω)
0.3
DS (ON)
0.2
0.1
RESISTANCE r
DRAIN-SOURCE ON-STATE
0
–1
10
210
0
357 2 10
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
2
10
7
5
4
3
(S)
fs
2
1
10
7
5
4
3
ADMITTANCE y
FORWARD TRANSFER
2
TC = 25°C
Pulse Test
VGS = 4V
10V
1
357 23 10257
D
(A)
VDS = 5V
Pulse Test
TC = 25°C
75°C
125°C
0
0246810
GATE-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE
4
10
7
5
3
2
3
10
7
5
3
2
2
10
CAPACITANCE
7
Ciss, Coss, Crss (pF)
5
Tch = 25°C
3
f = 1MH
2
VGS = 0V
1
10
10
357 2 10
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
Z
0
1
357 2 10
GS
(V)
Ciss
Coss
Crss
2
3 357 2
DS
(V)
0
10
0
10
23 57 10
DRAIN CURRENT I
SWITCHING CHARACTERISTICS
(TYPICAL)
2
10
7
5
4
3
2
1
10
7
5
4
3
SWITCHING TIME (ns)
2
0
10
0
10
23457 10
DRAIN CURRENT ID (A)
1
10
234457
D
(A)
t
d(off)
t
f
t
r
t
d(on)
Tch = 25°C
DD
= 50V
V
V
GS
= 10V
GEN
= RGS = 50Ω
R
1
10
23457
2
2
Feb.1999
Page 4
MITSUBISHI Nch POWER MOSFET
FS10VSJ-2
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
10
Tch = 25°C
I
D
(V)
GS
= 10A
8
VDS = 20V
6
50V
80V
4
2
GATE-SOURCE VOLTAGE V
0
0 4 8 12 16 20
g
GATE CHARGE Q
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
DS (ON)
DS (ON)
10
1
VGS = 10V
7
I
5
Pulse Test
4
D
= 1/2I
(TYPICAL)
D
3
2
0
10
7
5
4
3
2
–1
10
–50 0 50 100 150
DRAIN-SOURCE ON-STATE RESISTANCE r
DRAIN-SOURCE ON-STATE RESISTANCE r
CHANNEL TEMPERATURE Tch (°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
32
(A)
(A)
S
S
24
16
TC = 125°C
8
SOURCE CURRENT I
SOURCE CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
4.0
VDS = 10V
I
D
= 1mA
3.2
(V)
2.4
GS (th)
1.6
VOLTAGE V
0.8
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
75°C
25°C
VGS = 0V
Pulse Test
SD
(V)
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
(BR) DSS
(BR) DSS
1.4
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V
I
D
= 1mA
1.2
1.0
0.8
0.6
0.4
–50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
2
10
7
(ch–c)
5
th
3
2
1
10
7
D = 1.0
5
0.5
3
2
0.2
0
10
7
5
3
2
–1
10
–4
23 57 23 57 23 57 23 57
10
10
TRANSIENT THERMAL IMPEDANCE Z
CHARACTERISTICS
0.1
0.05
0.02
0.01
Single Pulse
–3
10
–2
PULSE WIDTH t
10
–1
P
10023 57
w
(s)
DM
tw
D
T
tw
=
T
10123 57
2
10
Feb.1999
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