Datasheet FS10VS-9 Datasheet (POWEREX)

MITSUBISHI Nch POWER MOSFET

FS10VS-9

HIGH-SPEED SWITCHING USE

FS10VS-9

¡VDSS ................................................................................ 450V

¡r

DS (ON) (MAX) .............................................................. 0.73Ω

¡I

D ..........................................................................................10A

OUTLINE DRAWING Dimensions in mm

r

+0.3

–0.5

3.0

q

10.5MAX.

1

qwe

5

wr

e

0.8

1.5MAX.

9.8 ± 0.5

8.6 ± 0.3

1.5MAX.

4.5

2.6 ± 0.4

q GATE w DRAIN e SOURCE r DRAIN

4.5

0.5

1.3

+0.3

0

–0

(1.5)

TO-220S

APPLICATION

SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol VDSS VGSS ID IDM PD Tch Tstg

—

Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight

Parameter Conditions Ratings Unit

VGS = 0V VDS = 0V

Typical value

450 ±30

10 30

125 –55 ~ +150 –55 ~ +150

1.2

V V A A

W

°C °C

g

Feb.1999

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Symbol UnitParameter Test conditions

V

(BR) DSS

V

(BR) GSS

IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c)

Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance

ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V , VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V

VDS = 25V, VGS = 0V, f = 1MHz

VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω

IS = 5A, VGS = 0V Channel to case

MITSUBISHI Nch POWER MOSFET

FS10VS-9

HIGH-SPEED SWITCHING USE

Limits

Min. Typ. Max.

450 ±30

— —

2 — —

3.3 — — — — — — — — —

— — — —

3

0.56

2.8

5.5

1100

135

20 20 30 95 35

1.5 —

— —

±10

0.73

3.7 — — — — — — — —

2.0

1.0

V V

µA

mA

1

V

4

Ω

V

S pF pF pF

ns ns ns ns

V

°C/W

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE

200

(W)

160

D

120

80

40

POWER DISSIPATION P

0

CASE TEMPERATURE T

OUTPUT CHARACTERISTICS

(A)

D

20

16

12

PD= 125W

(TYPICAL)

V

GS

= 20V

10V

8V

TC = 25°C Pulse Test

C

(°C)

6V

MAXIMUM SAFE OPERATING AREA

5 3

2

1

10

(A)

D

7 5

3 2

0

10

7 5

3

TC = 25°C

2

DRAIN CURRENT I

200150100500

–1

10

7 5

23 5710

Single Pulse

1

23 5710223 5710

DRAIN-SOURCE VOLTAGE V

tw=10µs

100µs

1ms

10ms

DC

3

DS

(V)

2

OUTPUT CHARACTERISTICS

(TYPICAL)

10

(A)

D

VGS=20V

8

6

10V

8V

6V

PD = 125W

8

4

DRAIN CURRENT I

0

0 1020304050

DRAIN-SOURCE VOLTAGE VDS (V)

5V

4

2

DRAIN CURRENT I

0

0 4 8 12 16 20

DRAIN-SOURCE VOLTAGE VDS (V)

TC = 25°C Pulse Test

5V

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS10VS-9

HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.

GATE-SOURCE VOLTAGE

(TYPICAL)

40

32

(V)

24

DS (ON)

16

VOLTAGE V

8

DRAIN-SOURCE ON-STATE

0

0 4 8 12 16 20

GATE-SOURCE VOLTAGE V

TRANSFER CHARACTERISTICS

(TYPICAL)

20

16

(A)

D

12

8

4

DRAIN CURRENT I

TC = 25°C Pulse Test

ID = 15A

10A

GS

(V)

TC = 25°C VDS = 50V Pulse Test

5A

ON-STATE RESISTANCE VS.

DRAIN CURRENT

(TYPICAL)

2.0 TC = 25°C Pulse Test

1.6

(Ω)

1.2

DS (ON)

0.8

0.4

RESISTANCE r

DRAIN-SOURCE ON-STATE

0

–1

5710023 5710123 5710

2310

DRAIN CURRENT I

FORWARD TRANSFER ADMITTANCE

VS.DRAIN CURRENT

(TYPICAL)

1

10

V

DS

= 10V

7

Pulse Test

5

(S)

3



fs

2

0

10

7 5

3

ADMITTANCE y

FORWARD TRANSFER

2

V

GS

= 10V

D

(A)

TC=25°C

125°C

20V

2

75°C

0

0 4 8 12 16 20

GATE-SOURCE VOLTAGE V

DRAIN-SOURCE VOLTAGE

2

3

10

7 5

3 2

2

10

7 5

CAPACITANCE

3 2

Ciss, Coss, Crss (pF)

Tch = 25°C

1

10

f = 1MHz

7

GS

= 0V

V

5

23 5710

DRAIN-SOURCE VOLTAGE V

CAPACITANCE VS.

(TYPICAL)

0

23 5710

1

23 5710

GS

Ciss

Coss

Crss

DS

(V)

2

(V)

23

–1

10

10–123 5710

DRAIN CURRENT I

SWITCHING CHARACTERISTICS

(TYPICAL)

3

10

7 5

3 2

2

10

7 5

3

SWITCHING TIME (ns)

2

1

10

–1

23 5710

10

DRAIN CURRENT ID (A)

0

23 5710

D

Tch = 25°C VDD = 200V VGS = 10V

GEN

= R

R

0

23 5710

(A)

GS

= 50Ω

t

d(off)

t

f

t

r

t

d(on)

1

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS10VS-9

HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE

VS.GATE CHARGE

(TYPICAL)

20

Tch = 25°C ID = 10A

16

VDS = 100V

200V

12

400V

8

4

GATE-SOURCE VOLTAGE VGS (V)

0

0 20406080100

GATE CHARGE Q

g (nC)

ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE

(t°C)

(25°C)

DS (ON)

10

1

7 5

VGS = 10V

D = 1/2ID

I Pulse Test

(TYPICAL)

3 2

0

10

7 5

3 2

–1

10

–50

DRAIN-SOURCE ON-STATE RESISTANCE r

CHANNEL TEMPERATURE Tch (°C)

0 50 100 150

SOURCE-DRAIN DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

40

TC=125°C

32

24

16

8

SOURCE CURRENT IS (A)

0

0 0.8 1.6 2.4 3.2 4.0

SOURCE-DRAIN VOLTAGE V

THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE

(TYPICAL)

5.0 VDS = 10V

ID = 1mA

4.0

3.0

GS (th) (V)

2.0

VOLTAGE V

1.0

GATE-SOURCE THRESHOLD

0

–50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C)

25°C

75°C

VGS = 0V Pulse Test

SD (V)

BREAKDOWN VOLTAGE VS.

(t°C)

(25°C)

CHANNEL TEMPERATURE

(TYPICAL)

1.4

BR (DSS)

VGS = 0V ID = 1mA

1.2

1.0

0.8

0.6

0.4 –50 0 50 100 150

DRAIN-SOURCE BREAKDOWN VOLTAGE V

CHANNEL TEMPERATURE Tch (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE V

TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)

10

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTICS

1

7 5

3 2

D=1

0

7

0.5

5

0.2

3 2

0.1

–1

7 5

3 2

–2

–4

23 57

10

0.05

0.02

0.01

Single Pulse

10

–3

–2

23 57 23 57 23 57

10

–1

PULSE WIDTH t

PDM

10023 57

w (s)

tw

D=

T

tw

T

10123 57

2

10

Feb.1999