Datasheet FS10VS-12 Datasheet (POWEREX)

MITSUBISHI Nch POWER MOSFET

FS10VS-12

HIGH-SPEED SWITCHING USE

FS10VS-12

¡VDSS ................................................................................ 600V

¡r

DS (ON) (MAX) .............................................................. 0.94Ω

¡I

D ..........................................................................................10A

OUTLINE DRAWING Dimensions in mm

r

+0.3

–0.5

3.0

q

10.5MAX.

1

qwe

5

wr

e

0.8

1.5MAX.

9.8 ± 0.5

8.6 ± 0.3

1.5MAX.

4.5

2.6 ± 0.4

q GATE
w DRAIN
e SOURCE
r DRAIN

4.5

0.5

1.3

+0.3

0

–0

TO-220S

(1.5)

APPLICATION

SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per­sonal computer etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol
VDSS
VGSS
ID
IDM
PD
Tch
Tstg

—

Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight

Parameter Conditions Ratings Unit

VGS = 0V
VDS = 0V

Typical value

600
±30

10
30

150
–55 ~ +150
–55 ~ +150

1.2

V
V
A
A

W

°C
°C

g

Feb.1999

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Symbol UnitParameter Test conditions

V

(BR) DSS

V

(BR) GSS

IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)

Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance

ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 600V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V

VDS = 25V, VGS = 0V, f = 1MHz

VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω

IS = 5A, VGS = 0V
Channel to case

MITSUBISHI Nch POWER MOSFET

FS10VS-12

HIGH-SPEED SWITCHING USE

Limits

Min. Typ. Max.

600
±30

—
—

2
—
—

4.5
—
—
—
—
—
—
—
—
—

—
—
—
—

3

0.72

3.6

7.0

1500

170

25
25
35

130

45

1.5
—

—
—

±10

0.94

4.7
—
—
—
—
—
—
—
—

2.0

0.83

V
V

µA

mA

1

V

4

Ω

V

S
pF
pF
pF

ns
ns
ns
ns

V

°C/W

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE

200

(W)

160

D

120

80

40

POWER DISSIPATION P

0

CASE TEMPERATURE T

OUTPUT CHARACTERISTICS

(A)

D

20

16

12

8

PD=
150W

(TYPICAL)

V

GS

= 20V

10V

8V

C

(°C)

TC = 25°C
Pulse Test

6V

MAXIMUM SAFE OPERATING AREA

5
3

2

1

10

(A)

D

7
5

3
2

0

10

7
5

3

TC = 25°C

2

DRAIN CURRENT I

200150100500

–1

10

7
5

23 5710

Single Pulse

1

23 5710223 5710

DRAIN-SOURCE VOLTAGE V

tw=10µs

100µs

1ms

10ms

DC

3

DS

(V)

2

OUTPUT CHARACTERISTICS

(TYPICAL)

VGS=20V

10V

8V
6V

PD = 150W

(A)

D

10

8

6

5V

4

4

DRAIN CURRENT I

0

0 1020304050

DRAIN-SOURCE VOLTAGE VDS (V)

5V

2

DRAIN CURRENT I

0

0 4 8 12 16 20

DRAIN-SOURCE VOLTAGE VDS (V)

TC = 25°C
Pulse Test

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS10VS-12

HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.

GATE-SOURCE VOLTAGE

(TYPICAL)

40

32

(V)

24

DS (ON)

16

VOLTAGE V

8

DRAIN-SOURCE ON-STATE

0

0 4 8 12 16 20

GATE-SOURCE VOLTAGE V

TRANSFER CHARACTERISTICS

(TYPICAL)

40

32

(A)

D

24

16

8

DRAIN CURRENT I

TC = 25°C
Pulse Test

ID = 20A

15A

10A

GS

(V)

TC = 25°C
VDS=50V
Pulse Test

5A

ON-STATE RESISTANCE VS.

DRAIN CURRENT

(TYPICAL)

2.0
TC = 25°C
Pulse Test

1.6

(Ω)

1.2

DS (ON)

0.8

0.4

RESISTANCE r

DRAIN-SOURCE ON-STATE

0

–1

5710023 5710123 5710

2310

DRAIN CURRENT I

FORWARD TRANSFER ADMITTANCE

VS.DRAIN CURRENT

(TYPICAL)

1

10

V

DS

= 10V

7

Pulse Test

5

(S)

3



fs

2

0

10

7
5

3

ADMITTANCE y

FORWARD TRANSFER

2

V

GS

= 10V

D

(A)

TC = 25°C

20V

2

75°C

125°C

0

0 4 8 12 16 20

GATE-SOURCE VOLTAGE V

DRAIN-SOURCE VOLTAGE

5

3
2

3

10

7
5

3
2

2

10

CAPACITANCE

7
5

Ciss, Coss, Crss (pF)

3

Tch = 25°C

2

f = 1MHz

GS

= 0V

V

1

10

23 5710

DRAIN-SOURCE VOLTAGE V

CAPACITANCE VS.

(TYPICAL)

0

23 5710

1

23 5710

GS

Ciss

Coss

Crss

DS

(V)

2

(V)

23

–1

10

10–123 5710

DRAIN CURRENT I

SWITCHING CHARACTERISTICS

(TYPICAL)

3

10

7
5

3

t

10

2

2

7
5

3

SWITCHING TIME (ns)

t

2

1

10

–1

23 5710

10

DRAIN CURRENT ID (A)

d(off)

t

f

d(on)

t

r

0

23 5710

D

Tch = 25°C
VDD = 200V
VGS = 10V

GEN

= R

R

0

23 5710

(A)

GS

1

= 50Ω

1

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS10VS-12

HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE

VS.GATE CHARGE

(TYPICAL)

20

16

Tch = 25°C
ID = 10A

V

DS

= 100V

(V)

GS

200V

12

400V

8

4

GATE-SOURCE VOLTAGE V

0

0 20406080100

g

GATE CHARGE Q

(nC)

ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE

(t°C)

(25°C)

DS (ON)

DS (ON)

10

1

VGS = 10V

7

I

5

Pulse Test

D

= 1/2I

(TYPICAL)

D

3
2

0

10

7
5

3
2

–1

10

–50

DRAIN-SOURCE ON-STATE RESISTANCE r

DRAIN-SOURCE ON-STATE RESISTANCE r

CHANNEL TEMPERATURE Tch (°C)

0 50 100 150

SOURCE-DRAIN DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

40

TC=125°C

32

(A)

S

24

16

8

SOURCE CURRENT I

0

0 0.8 1.6 2.4 3.2 4.0

SOURCE-DRAIN VOLTAGE V

THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE

(TYPICAL)

5.0
VDS = 10V

ID = 1mA

4.0

(V)

3.0

GS (th)

2.0

VOLTAGE V

1.0

GATE-SOURCE THRESHOLD

0

–50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C)

25°C

75°C

VGS = 0V
Pulse Test

SD

(V)

BREAKDOWN VOLTAGE VS.

(t°C)

(25°C)

CHANNEL TEMPERATURE

(TYPICAL)

1.4

BR (DSS)

BR (DSS)

VGS = 0V
ID = 1mA

1.2

1.0

0.8

0.6

0.4
–50 0 50 100 150

DRAIN-SOURCE BREAKDOWN VOLTAGE V

CHANNEL TEMPERATURE Tch (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE V

TRANSIENT THERMAL IMPEDANCE

(°C/W)

1

10

7

(ch–c)

5

th

3
2

0

D=1

10

7

0.5

5
3

0.2

2

0.1

–1

10

7
5

3
2

–2

10

–4

23 57

10

10

TRANSIENT THERMAL IMPEDANCE Z

CHARACTERISTICS

0.05

0.02

0.01

Single Pulse

–3

–2

23 57 23 57 23 57

10

10

–1

PULSE WIDTH t

P

10023 57

w

(s)

DM

tw

D=

T

tw

T

10123 57

2

10

Feb.1999