Page 1
MITSUBISHI Nch POWER MOSFET
FS10KMJ-2
HIGH-SPEED SWITCHING USE
FS10KMJ-2
¡4V DRIVE
DSS ............................................................................... 100V
¡V
¡r
DS (ON) (MAX) ............................................................. 0.19Ω
D ........................................................................................ 10A
¡I
¡Integrated Fast Recovery Diode (TYP.)
iso ............................................................................... 2000V
¡V
............ 95ns
OUTLINE DRAWING Dimensions in mm
10 ± 0.3 2.8 ± 0.2
3 ± 0.33.6 ± 0.3
15 ± 0.314 ± 0.5
123
w
q
e
6.5 ± 0.3
f 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
q GATE
w DRAIN
e SOURCE
E
0.75 ± 0.15
4.5 ± 0.2
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 100µH
AC for 1minute, Terminal to case
Typical value
100
±20
10
40
10
10
40
20
–55 ~ +150
–55 ~ +150
2000
2.0
V
V
A
A
A
A
A
W
°C
°C
V
g
Feb.1999
Page 2
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
GS = ±20V, VDS = 0V
V
DS = 100V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 5A, VGS = 10V
I
D = 5A, VGS = 4V
I
D = 5A, VGS = 10V
I
D = 5A, VDS = 5V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 50V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
V
S = 5A, VGS = 0V
I
Channel to case
S = 10A, dis/dt = –100A/µs
I
MITSUBISHI Nch POWER MOSFET
FS10KMJ-2
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
100
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
0.14
0.16
0.70
13
800
125
45
14
15
65
40
1.0
—
95
—
±0.1
0.1
2.0
0.19
0.21
0.95
—
—
—
—
—
—
—
—
1.5
6.25
—
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
40
(W)
32
D
24
16
8
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
20
16
(A)
D
12
8
(TYPICAL)
VGS = 10V
C
(°C)
5V6V
4V
TC = 25°C
Pulse Test
3V
MAXIMUM SAFE OPERATING AREA
3
2
1
10
(A)
D
7
5
3
2
0
10
7
5
3
TC = 25°C
2
DRAIN CURRENT I
Single Pulse
–1
10
7
5
210
357 2 10
0
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 10V
(A)
D
10
8
TC = 25°C
Pulse Test
6
4
1
35752
tw = 10ms
100ms
1ms
10ms
DC
2
DS
(V)
5V4V6V
3V
2.5V
4
DRAIN CURRENT I
0
0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
PD = 20W
2
DRAIN CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
2V
Feb.1999
Page 3
MITSUBISHI Nch POWER MOSFET
FS10KMJ-2
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
5.0
4.0
(V)
3.0
DS (ON)
2.0
VOLTAGE V
1.0
DRAIN-SOURCE ON-STATE
0
0246810
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
20
16
(A)
D
12
8
4
DRAIN CURRENT I
TC = 25°C
Pulse Test
ID = 15A
10A
GS
(V)
Tc = 25°C
DS
= 10V
V
Pulse Test
5A
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.5
0.4
(Ω)
0.3
DS (ON)
0.2
0.1
RESISTANCE r
DRAIN-SOURCE ON-STATE
0
–1
10
210
0
357 2 10
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
2
10
7
5
4
3
(S)
fs
2
1
10
7
5
4
3
ADMITTANCE y
FORWARD TRANSFER
2
TC = 25°C
Pulse Test
VGS = 4V
10V
1
357 23 10257
D
(A)
VDS = 5V
Pulse Test
TC = 25°C
75°C
125°C
0
0246810
GATE-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE
4
10
7
5
3
2
3
10
7
5
3
2
2
10
CAPACITANCE
7
Ciss, Coss, Crss (pF)
5
Tch = 25°C
3
f = 1MH
2
VGS = 0V
1
10
10
357 2 10
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
Z
0
1
357 2 10
GS
(V)
Ciss
Coss
Crss
2
3 357 2
DS
(V)
0
10
0
10
23 57 10
DRAIN CURRENT I
SWITCHING CHARACTERISTICS
(TYPICAL)
2
10
7
5
4
3
2
1
10
7
5
4
3
SWITCHING TIME (ns)
2
0
10
0
10
23457 10
DRAIN CURRENT ID (A)
1
10
234457
D
(A)
t
d(off)
t
f
t
r
t
d(on)
Tch = 25°C
DD
= 50V
V
V
GS
= 10V
GEN
= RGS = 50Ω
R
1
10
23457
2
2
Feb.1999
Page 4
MITSUBISHI Nch POWER MOSFET
FS10KMJ-2
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
10
Tch = 25°C
I
D
(V)
GS
= 10A
8
VDS = 20V
6
50V
80V
4
2
GATE-SOURCE VOLTAGE V
0
0 4 8 12 16 20
g
GATE CHARGE Q
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
DS (ON)
DS (ON)
10
1
VGS = 10V
7
I
5
Pulse Test
4
D
= 1/2I
(TYPICAL)
D
3
2
0
10
7
5
4
3
2
–1
10
–50 0 50 100 150
DRAIN-SOURCE ON-STATE RESISTANCE r
DRAIN-SOURCE ON-STATE RESISTANCE r
CHANNEL TEMPERATURE Tch (°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
32
(A)
(A)
S
S
24
16
TC = 125°C
8
SOURCE CURRENT I
SOURCE CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
4.0
VDS = 10V
I
D
= 1mA
3.2
(V)
2.4
GS (th)
1.6
VOLTAGE V
0.8
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
75°C
25°C
VGS = 0V
Pulse Test
SD
(V)
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
(BR) DSS
(BR) DSS
1.4
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V
I
D
= 1mA
1.2
1.0
0.8
0.6
0.4
–50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
2
10
7
(ch–c)
5
th
3
2
1
10
D = 1.0
7
5
0.5
3
0.2
2
0
10
7
5
3
2
–1
10
–4
23 57 23 57 23 57 23 57
10
10
TRANSIENT THERMAL IMPEDANCE Z
CHARACTERISTICS
0.1
0.05
0.02
0.01
Single Pulse
–3
10
–2
PULSE WIDTH t
10
–1
P
10023 57
w
(s)
DM
tw
D
T
tw
=
T
10123 57
2
10
Feb.1999
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