Page 1
MITSUBISHI Nch POWER MOSFET
FS10AS-3
HIGH-SPEED SWITCHING USE
FS10AS-3
¡10V DRIVE
¡V
DSS ................................................................................150V
DS (ON) (MAX) ........................................................... 170mΩ
¡r
D ......................................................................................... 10A
¡I
¡Integrated Fast Recovery Diode (TYP.)
...........100ns
OUTLINE DRAWING Dimensions in mm
0.9MAX.
2.3
q
6.5
5.0 ± 0.2
r
1.0
1.0MAX.
2.3
2.3
qwe
wr
e
10MAX.
5.5 ± 0.2
2.3MIN. 1.5 ± 0.2
q GATE
w DRAIN
e SOURCE
r DRAIN
0.5 ± 0.1
A
0.5 ± 0.2
0.8
MP-3
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 100µH
Typical value
150
±20
10
40
10
10
40
35
–55 ~ +150
–55 ~ +150
0.26
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999
Page 2
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
D = 1mA, VGS = 0V
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
I
GS = ±20V, VDS = 0V
V
DS = 150V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 5A, VGS = 10V
I
D = 5A, VGS = 10V
I
D = 5A, VDS = 10V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 80V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
V
I
S = 5A, VGS = 0V
Channel to case
S = 10A, dis/dt = –100A/µs
I
MITSUBISHI Nch POWER MOSFET
FS10AS-3
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
150
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
122
0.61
12
1250
175
75
25
30
60
34
1.0
—
100
—
±0.1
0.1
4.0
170
0.85
—
—
—
—
—
—
—
—
1.5
3.57
—
V
µA
mA
V
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
10
TC = 25°C
Pulse Test
8
6
(TYPICAL)
VGS = 20V 10V 6V7V
C (°C)
MAXIMUM SAFE OPERATING AREA
3
2
2
10
7
5
3
2
1
10
7
5
3
2
DRAIN CURRENT ID (A)
0
10
7
TC = 25°C
5
Single Pulse
3
357 2 10
210
DC
1
357 2210
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
5
TC = 25°C
Pulse Test
VGS = 20V
10V 6V5V7V
4
3
tw = 10ms
100ms
1ms
10ms
2
357
3
DS (V)
4
2
DRAIN CURRENT ID (A)
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
5V
2
1
DRAIN CURRENT ID (A)
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
Page 3
MITSUBISHI Nch POWER MOSFET
FS10AS-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
2.0
1.6
(V)
1.2
DS (ON)
0.8
VOLTAGE V
0.4
DRAIN-SOURCE ON-STATE
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
20
16
(A)
D
12
8
4
DRAIN CURRENT I
TC = 25°C
Pulse Test
ID = 15A
10A
GS
(V)
TC = 25°C
DS
= 10V
V
Pulse Test
5A
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
200
TC = 25°C
Pulse Test
160
(mΩ)
120
DS (ON)
80
40
DRAIN-SOURCE ON-STATE
RESISTANCE r
0
0
357 2 10
357 2 10
10
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
3
10
7
5
4
10
3
2
2
TC = 25°C
75°C
125°C
(S)
fs
7
5
4
3
ADMITTANCE y
FORWARD TRANSFER
2
VGS = 10V
20V
1
357 23
D
(A)
VDS = 10V
Pulse Test
2
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE
4
10
7
5
3
2
3
10
7
5
3
2
2
10
CAPACITANCE
7
Ciss, Coss, Crss (pF)
5
Tch = 25°C
3
f = 1MH
2
VGS = 0V
1
10
10
357 2 10
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
Z
0
1
357 2 10
GS
(V)
Ciss
Coss
Crss
2
357 32
DS
(V)
1
10
0
10
23457 10
DRAIN CURRENT I
SWITCHING CHARACTERISTICS
(TYPICAL)
3
10
7
5
4
3
2
2
10
7
5
t
f
4
3
SWITCHING TIME (ns)
2
t
r
1
10
0
10
23457 10
DRAIN CURRENT ID (A)
t
d(off)
t
d(on)
10
10
1
1
Tch = 25°C
V
V
R
23457
D
(A)
DD
= 80V
GS
= 10V
GEN
= RGS = 50Ω
23457
2
2
Feb.1999
Page 4
MITSUBISHI Nch POWER MOSFET
FS10AS-3
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
Tch = 25°C
(V)
I
D
16
12
= 10A
VDS = 50V
80V
100V
GS
8
4
GATE-SOURCE VOLTAGE V
0
0 1020304050
g
GATE CHARGE Q
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
DS (ON)
DS (ON)
10
1
VGS = 10V
7
I
5
Pulse Test
4
D
= 1/2I
(TYPICAL)
D
3
2
0
10
7
5
4
3
2
–1
10
–50 0 50 100 150
DRAIN-SOURCE ON-STATE RESISTANCE r
DRAIN-SOURCE ON-STATE RESISTANCE r
CHANNEL TEMPERATURE Tch (°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
VGS = 0V
Pulse Test
16
(A)
S
12
TC = 125°C
75°C
25°C
8
4
SOURCE CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V
I
D
= 1mA
4.0
(V)
3.0
GS (th)
2.0
VOLTAGE V
1.0
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
SD
(V)
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
(BR) DSS
(BR) DSS
1.4
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V
D
= 1mA
I
1.2
1.0
0.8
0.6
0.4
–50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
1
10
7
(ch–c)
5
D = 1.0
th
3
0.5
2
0.2
0
10
0.1
7
5
10
10
3
2
–1
7
5
3
2
–2
–4
10
0.05
0.02
0.01
Single Pulse
23 57 23 57 23 57 23 57
10
TRANSIENT THERMAL IMPEDANCE Z
CHARACTERISTICS
–3
10
–2
PULSE WIDTH t
10
–1
P
10023 57
w
(s)
DM
tw
=
D
T
tw
T
10123 57
2
10
Feb.1999
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