Datasheet FS0808DD, FS0808BD, FS0809MD, FS0809DD, FS0809BD Datasheet (FAGOR)

On-State Current

8 Amp

FS08...D

SURFACE MOUNT SCR

These series of Silicon Controlled
R ectifier use a high performance

PNPN technology.

These parts are intended for general
purpose applications where high gate
sensitivity is required using surface
mount technology.

Dec - 02

Absolute Maximum Ratings, according to IEC publication No. 134

On-state Current

Average On-state Current

Non-repetitive On-State Current

Non-repetitive On-State Current

Fusing Current

Peak Reverse Gate Voltage

Peak Gate Current

Peak Gate Dissipation

Gate Dissipation

Operating Temperature

Storage Temperature

Soldering Temperature

I

T(RMS)

PARAMETER CONDITIONS Min. Max. Unit

DPAK

(Plastic)

Gate Trigger Current

0.5 to 15 mA

Off-State Voltage

200 V ÷ 600 V

SYMBOL

I

T(AV)

I

TSM

I

TSM

I2t
V

GRM

I

GM

P

GM

P

G(AV)

T

j

T

stg

T

sld

180º Conduction Angle, Tc = 110 ºC

Half Cycle, Θ = 180 º, T

C

= 110 ºC

Half Cycle, 60 Hz

Half Cycle, 50 Hz

t

p

= 10ms, Half Cycle

I

GR

= 10 µA

20 µs max.

20 µs max.

20ms max.

10s max.

-40

-40

A

A

A

A

A

2

s

V

A

W

W

ºC

ºC

ºC

8

5

73

70

24.5

5

4

5

1

+125

+150

260

K

A

G

A

Repetitive Peak Off State

Voltage

PARAMETER CONDITIONS VOLTAGE UnitSYMBOL

V

DRM

V

RRM

R

GK

= 1 KΩ

B

200 V

D

400

M

600

FS08...D

SURFACE MOUNT SCR

Dec - 02

FAGOR

SCR

CURRENT

CASE

VOLTAGE

SENSITIVITY

F S 08 08 B D 00

FORMING

TR

PACKAGING

Electrical Characteristics

Gate Trigger Current

Off-State Leakage Current

On-state Voltage

Gate Trigger Voltage

Gate Non Trigger Voltage

Holding Current

PARAMETER CONDITIONS SENSITIVITY

Unit

SYMBOL

I

GT

I

DRM

VD = 12 V

DC

, R

L

= 33Ω. T

j

= 25 ºC

mA

09

2

15

2

5

1.6

1.3

0.2

mA

µA

V

V

V

MIN

MAX

MAX

MAX

MAX

MAX

MIN

50

70

MAX

/ I

RRM

V

TM

V

GT

V

GD

I

H

di / dt

R

th(j-a)

Critical Rate of Current Rise

Thermal Resistance
Junction-Amb for DC

ºC/W

V

D

= V

DRM

, Tj = 125 ºC

T

j

= 25 ºC

V

R

= V

RRM

,

at IT = 16 Amp, tp = 380 µs, Tj = 25 ºC

IT = 100 mA , Gate open

Tr ≤ 100 ns, F = 60 Hz,

T

j

= 125 ºC

VD = 12 V

DC

, R

L

= 33Ω, T

j

= 25 ºC

V

D

= V

DRM

, R

L

= 3.3KΩ,

T

j

= 125 ºC

mA

MIN

A/µs

R

d

T

j

= 125 ºC

R

d

Dynamic resistance MAX

46

mΩ

08

0.5

5

4025

MAX

I

L

mA5030

Latching Current

I

G

= 1.2 I

GT

V/µs

dv / dt

Critical Rate of Voltage Rise VD = 0.67 x V

DRM

, Gate open MIN

15050

20

R

th(j-c)

Thermal Resistance
Junction-Case for DC

ºC/W

V

t0

T

j

= 125 ºC

Threshold Voltage MAX

0.85

V

Tj = 25 ºC

I

G

= 2 x I

GT

S = Cooper surface under tab

S = 0.5 cm

2

Dec - 02

Fig. 1: Maximum average power dissipation
versus average on-state current.

FS08...D

SURFACE MOUNT SCR

0 2

10

8

6

4

2

0

4 6

P (W)

I

T(av)

(A)

1 3 5 7

1.0

K = [Zth(j-c) / Rth (j-c)]

Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.

1E-3 1E-2 1E-1 1E+0

tp (s)

0.5

0.2

0.1

α

360 º

Fig. 2: Average and D.C. on-state current
versus case temperature.

I

T(av)

(A)

T case (ºC)

10

8

6

4

2

0

0 25 50 75 100 125

α = 180 º

D.C.

IGT, IH (Tj) / IGT, IH (Tj = 25 ºC)

Fig. 4: Relative variation of gate trigger
current, holding and latching current versus
junction temperature.

Tj (ºC)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-40 -20 20 60 80 1000 40 120 140

IGT

IH & IL

1 10 100 1000

Fig. 5: Non repetitive surge peak on-state
current versus number of cycles.

80

70

60

50

40

30

20

10

0

I

TSM

(A)

Number of
cycles

Tj initial = 25 ºC
F = 50 Hz

300

1 10

I

TSM

(A). I2t (A2s)

Fig. 6: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp < 10 ms, and corresponding value of I

2

t.

tp(ms)

2 5

100

10

I

TSM

20

50

I2 t

Tj initial = 25 ºC

Dec - 02

FS08...D

SURFACE MOUNT SCR

PACKAGE MECHANICAL DATA

DPAK TO 252-AA

A

A1

b

c
c1
c2

D

D1

E

E1

e

H

L
L1
L2
L3
L4

REF.

DIMENSIONS

Milimeters

Min. Nominal Max.

2.18
0

0.64

0.46

0.46

5.97

5.21

6.35

5.20

9.40

1.40

2.55

0.46

0.89

0.64

2.3±0.18

0.12

0.75±0.1

0.8±0.013

6.1±0.1

6.58±0.14

5.36±0.1

2.28BSC

9.90±0.15

2.6±0.05

0.5±0.013

1.20±0.05

0.83±0.1

2.39

0.127

0.89

0.61

0.56

6.22

5.52

6.73

5.46

10.41

1.78

2.74

0.58

1.27

1.02

Marking: type number
Weight: 0.2 g

8º

±2º

E

L3

D

be

4.57 Typ.

ø1x0.15

H

1.6

L4

A

c2

8º

±2º

8º

±2º

8º

±2º

8º

±2º

L

L2

A1

1.067

±0.013

E1

D1

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Fig. 8: On-state characteristics (maximum
values).

ITM(A)

4.0

100.0

VTM(V)

4.5

10.0

1.0

0.1

5.0

Tj = Tj max.

Tj = 25 ºC

Tj max
Vto = 0.85 V
Rt = 46 mΩ

FOOT PRINT

6.7

6.7

3

1.6

2.32.3

1.6

3