Page 1
G
G
K
On-State Current
1.25 Amp
FS02...A/B
SENSITIVE GATE SCR
These series of Silicon Controlled
R ectifier use a high performance
PNPN technology.
These parts are intended for general
purpose applications where high gate
sensitivity is required.
Jun - 02
Absolute Maximum Ratings, according to IEC publication No. 134
On-state Current
Average On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Reverse Gate Voltage
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
I
T(RMS)
PARAMETER CONDITIONS Min. Max. Unit
TO92
(Plastic)
RD26
(Plastic)
FS02...A
FS02...B
Gate Trigger Current
< 200 µA
Off-State Voltage
200 V ÷ 800 V
SYMBOL
I
T(AV)
I
TSM
I
TSM
I2t
V
GRM
I
GM
P
GM
P
G(AV)
T
j
T
stg
T
sld
All Conduction Angle, TL = 60 ºC
Half Cycle, Θ = 180 º, T
L
= 60 ºC
Half Cycle, 60 Hz, T
j
= 25 ºC
Half Cycle, 50 Hz, T
j
= 25º C
t
p
= 10ms, Half Cycle
I
GR
= 10 µA, Tj = 25 ºC
20 µs max.
20 µs max.
20ms max.
1.6 mm from case, 10s max.
1.25
0.8
25
22.5
2.5
8
-40
-40
A
A
A
A
A
2
s
V
A
W
W
ºC
ºC
ºC
1.2
3
0.2
+125
+150
260
A
K
A
Repetitive Peak Off State
Voltage
PARAMETER CONDITIONS VOLTAGE UnitSYMBOL
V
DRM
V
RRM
R
GK
= 1 KΩ
B
200
V
D
400
M
600N800
Page 2
FS02...A/B
SENSITIVE GATE SCR
Jun - 02
PART NUMBER INFORMATION
FAGOR
SCR
CURRENT
CASE
VOLTAGE
SENSITIVITY
F S 02 01 B A 00
FORMING
BU
PACKAGING
Electrical Characteristics
Gate Trigger Current
Off-State Leakage Current
On-state Voltage
On-state Threshold Voltage
Dinamic Resistance
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
PARAMETER CONDITIONS SENSITIVITY
Unit
SYMBOL
I
GT
I
DRM
VD = 12 V
DC
, R
L
= 140Ω, T
j
= 25 ºC
01
1
20
µA
04
15
50
500
5
1.45
0.9
200
0.8
0.1
15
µA
V
V
mΩ
V
V
mA
mA
V/µs
MIN
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MAX
MAX
MIN
MIN
50
60
150
A/µs
/ I
RRM
V
TM
V
T(O)
r
d
V
GT
I
H
I
L
dv / dt
di / dt
R
th(j-l)
R
th(j-a)
Critical Rate of Voltage
Rise
Critical Rate of Current Rise
Thermal Resistance
Junction-Leads for DC
Thermal Resistance
Junction-Ambient
ºC/W
ºC/W
V
D
= V
DRM
, R
GK
= 1KΩ, T
j
= 125 ºC
T
j
= 25 ºC
V
R
= V
RRM
,
at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC
Tj = 125 ºC
T
j
= 125 ºC
V
D
= 12 V
DC
, R
L
= 140Ω, T
j
= 25 ºC
I
T
= 50 mA , R
GK
= 1KΩ, T
j
= 25 ºC
I
G
= 1 mA , R
GK
= 1KΩ, T
j
= 25 ºC
V
D
= 0.67 x V
DRM
, R
GK
= 1KΩ,
T
j
= 125 ºC
5
6
02
200
03
20
200
15 2010
Tr ≤ 100 ns, F = 60 Hz,
T
j
= 125 ºC
I
G
= 2 x I
GT
V
GD
VD = V
DRM
, R
L
= 3.3KΩ,
T
j
= 125 ºC
R
GK
= 1KΩ,
Page 3
Jun - 02
Fig. 1: Maximum average power dissipation
versus average on-state current
0 20
1.2
1.0
0.8
0.6
0.4
0.2
0.0
40 60 80 100 120 140
P (W)
Fig. 2: Correlation between maximum
average power dissipation and maximum
allowable temperature (Tamb and Tlead).
Tlead (ºC)
-50
-70
-90
-110
Rth (j-a)
Fig. 3: Average on-state current versus lead
temperature
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
Igt (Tj)
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature.
-40 -20 0 60 80 100 120 140
Igt (Tj = 25 ºC)
Ih (Tj)
Ih (Tj = 25 ºC)
4020
Ih
Igt
1 10 100 1000
Fig. 6: Non repetitive surge peak on-state
current versus number of cycles.
25
20
15
10
5
0
I
TSM
(A)
Tj initial = 25 ºC
1.00
0.10
0.01
Zth(j-a) / Rth(j-a)
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
FS02...A/B
SENSITIVE GATE SCR
Rth (j-l)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
T(AV)
(A)
0 20 40 60 80 100 120
α = 180 º
10 30 50 70 90 110 130
DC
0 0.1
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.2 0.3 0.4 0.5 0.6 0.7 0.8
P (W)
α
360 º
0.9 1 1.1 1.2
DC
α = 30 º
α = 60 º
α = 90 º
α = 120 º
α = 180 º
Tamb (ºC)
Tj (ºC)
Number of cycles
tp (s)
T lead (ºC)
I
T(AV)
(A)
Page 4
Jun - 02
FS02...A/B
SENSITIVE GATE SCR
PACKAGE MECHANICAL DATA
TO92 (Plastic)
A
B
C
D
E
F
G
H
a
b
REF.
DIMENSIONS
Milimeters
Min. Typ. Max.
Marking: type number
Weight: 0.2 g
PACKAGE MECHANICAL DATA
RD26 (Plastic)
-
4.55
2.42
1.15
4.55
12.7
3.55
-
0.38
0.33
1.5
4.6
2.54
1.27
4.6
14.1
3.6
1.5
0.43
0.38
-
4.65
2.66
1.39
4.65
15.5
3.65
-
0.48
0.43
A
B
C
D
E
F
G
a
b
REF.
DIMENSIONS
Millimeters
Min. Typ. Max.
-
4.55
2.42
1.15
4.55
12.7
3.55
0.38
0.33
1.5
4.6
2.54
1.27
4.6
14.1
3.6
0.43
0.38
-
4.65
2.66
1.39
4.65
15.5
3.65
0.48
0.43
Marking: type number
Weight: 0.2 g
A
B
C
D
G
b
E F
H
a
C
D
G
A
a
B
E F
45º
b
Fig. 8: On-state characteristics (maximum
values).
100
10
1
0.1
I
TSM
(A). I2t (A2s)
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp ≤ 10 ms, and corresponding value of I
2
t.
100
10
1
ITM(A)
1 10
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Tj max
Tj initial
25 ºC
Tj max
Vto = 1.05 V
Rt = 0.150Ω
VTM(V)
Tj initial = 25 ºC
tp(ms)
I2 t
I
TSM
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