Page 1
On-State Current
1.25 Amp
FS02...N
SURFACE MOUNT SCR
These series of Silicon Controlled
R ectifier use a high performance
PNPN technology.
These parts are intended for general
purpose applications where high gate
sensitivity is required using surface mount
technology.
Absolute Maximum Ratings, according to IEC publication No. 134
On-state Current*
Average On-state Current*
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Reverse Gate Voltage
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
I
T(RMS)
PARAMETER CONDITIONS Min. Max. Unit
SOT223
(Plastic)
Gate Trigger Current
< 200 µA
Off-State Voltage
200 V ÷ 800 V
SYMBOL
I
T(AV)
I
TSM
I
TSM
I2t
V
GRM
I
GM
P
GM
P
G(AV)
T
j
T
stg
T
sld
Half Cycle, Θ = 180 º, T
tab
= 95 ºC
Half Cycle, Θ = 180 º, T
tab
= 95 ºC
Half Cycle, 60 Hz, T
j
= 25 ºC
Half Cycle, 50 Hz, T
j
= 25 ºC
t
p
= 10ms, Half Cycle
I
GR
= 10 µA, Tj = 25 ºC
20 µs max.
20 µs max.
20 ms max.
10s max.
1.25
0.8
25
22.5
2.5
8
-40
-40
A
A
A
A
A
2
s
V
A
W
W
ºC
ºC
ºC
1.2
3
0.2
+125
+150
260
* with 5 cm
2
copper (e= 35µm) surface under tab.
Jun - 02
Repetitive Peak Off State
Voltage
PARAMETER CONDITIONS VOLTAGE UnitSYMBOL
V
DRM
V
RRM
R
GK
= 1 KΩ
B
200
V
D
400
M
600N800
Page 2
FS02...N
SURFACE MOUNT SCR
PART NUMBER INFORMATION
Jun - 02
FAGOR
SCR
CURRENT
CASE
VOLTAGE
SENSITIVITY
F S 02 01 B N 00
FORMING
RB
PACKAGING
Electrical Characteristics
Gate Trigger Current
Off-State Leakage Current
On-state Voltage
On-state Threshold Voltage
Dinamic Resistance
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
PARAMETER CONDITIONS SENSITIVITY
Unit
SYMBOL
I
GT
I
DRM
VD = 12 V
DC
, R
L
= 140Ω, T
j
= 25 ºC
01
1
20
µA
04
15
50
500
5
1.45
0.9
150
0.8
0.1
15
µA
V
V
mΩ
V
V
mA
mA
V/µs
MIN
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MAX
MAX
MIN
MIN
50
25
60
A/µs
/ I
RRM
V
TM
V
T(O)
r
d
V
GT
I
H
I
L
dv / dt
di / dt
R
th(j-l)
R
th(j-a)
Critical Rate of Voltage
Rise
Critical Rate of Current Rise
Thermal Resistance
Junction-Leads for DC
Thermal Resistance
Junction-Ambient
ºC/W
ºC/W
V
D
= V
DRM
, R
GK
= 1KΩ, T
j
= 125 ºC
T
j
= 25 ºC
V
R
= V
RRM
,
at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC
Tj = 125 ºC
T
j
= 125 ºC
V
D
= 12 V
DC
, R
L
= 140Ω, T
j
= 25 ºC
I
T
= 50 mA , R
GK
= 1KΩ, T
j
= 25 ºC
I
G
= 1 mA , R
GK
= 1KΩ, T
j
= 25 ºC
V
D
= 0.67 x V
DRM
, R
GK
= 1KΩ,
T
j
= 125 ºC
5
6
02
200
03
20
200
15 2010
Tr ≤ 100 ns, F = 60 Hz,
T
j
= 125 ºC
I
G
= 2 x I
GT
V
GD
VD = V
DRM
, R
L
= 3.3KΩ,
T
j
= 125 ºC
R
GK
= 1KΩ,
Page 3
FS02...N
SURFACE MOUNT SCR
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.2 0.4 0.6 0.8
P (W)
α
360 º
Fig. 1: Maximum average power dissipation
versus average on-state current
0 20
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
40 60 80 100 120 140
P (W)
Fig. 2: Correlation between maximum
average power dissipation and maximum
allowable temperature (Tamb and T tab).
T tab (ºC)
-85
-95
-105
-115
-125
Fig. 3: Average on-state current versus tab
temperature
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
Igt (Tj)
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature.
-40 -20 0 60 80 100 120 140
Igt (Tj = 25 ºC)
Ih (Tj)
Ih (Tj = 25 ºC)
4020
Ih
Igt
1 10 100 1000
Fig. 6: Non repetitive surge peak on-state
current versus number of cycles.
25
20
15
10
5
0
I
TSM
(A)
Tj initial = 25 ºC
1.00
0.10
0.01
Zth(j-a) / Rth(j-a)
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Standard foot print,
e (Cu) = 35 µm
Jun - 02
Rth (j-l)
Rth (j-a)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
T(AV)
(A)
0 20 40 60 80 100 120
α = 180 º
10 30 50 70 90 110 130
DC
1.0 1.2 1.4
α = 30 º
α = 60 º
α = 90 º
α = 120 º
α = 180 º
DC
Tamb (ºC)
Tj (ºC)
Number of cycles
tp (s)
T lead (ºC)
I
T(AV)
(A)
Page 4
FS02...N
Jun - 02
SURFACE MOUNT SCR
PACKAGE MECHANICAL DATA
SOT223 (Plastic)
A
B
C
D
E
F
G
H
I
J
K
REF.
DIMENSIONS
Milimeters
Min. Typ. Max.
Weight: 0.11 g
FOOT PRINT
6.30
6.70
3.30
-
-
2.95
0.65
1.50
0.50
-
0.25
6.50
7.00
3.50
4.60
2.30
3.00
0.70
1.60
0.60
0.02
0.30
6.70
7.30
3.70
-
-
3.15
0.85
1.70
0.70
0.05
0.35
3.3
1.5
1.5
(3x) 1 2.3
4.6
6.4
G
F
A
16º max. (4x)
H
D
E
I
B
C
J
10º max.
K
Fig. 8: On-state characteristics (maximum
values).
100
10
1
0.1
I
TSM
(A). I2t (A2s)
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp ≤ 10 ms, and corresponding value of I
2
t.
100
10
1
ITM(A)
1 10
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Tj max
Tj initial
25 ºC
Tj max
Vto = 1.05 V
Rt = 0.150 Ω
VTM(V)
Tj initial = 25 ºC
tp(ms)
I2 t
I
TSM
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