Datasheet FRM450R, FRM450H, FRM450D Datasheet (Intersil Corporation)

June 1998

FRM450D, FRM450R,

FRM450H

10A, 500V, 0.600 Ohm, Rad Hard,

N-Channel Power MOSFETs

Features

• 10A, 500V, RDS(on) = 0.600Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

- Performance Permits Limited Use to 3000KRAD(Si)

• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

- Survives 2E12 Typically If Current Limited to IDM

• Photo Current - 30nA Per-RAD(Si)/sec Typically

• Neutron - Pre-RAD Specifications for 3E12 Neutrons/cm

- Usable to 3E13 Neutrons/cm

2

2

Description

The Intersil has designed a series of SECOND GENERATION hardened power
MOSFETs of both N and P channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is
offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from
1E13n/cm
(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with cur­rent limiting.

This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

2

for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness

Package

Symbol

o

)

TO-204AA

This part may be supplied as a die or in various packages other than shown above .
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.

Absolute Maximum Ratings (TC = +25

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 500 V

Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 500 V

Continuous Drain Current

TC = +25

TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 30 A

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V

Maximum Power Dissipation

TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM 30 A

Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS 10 A

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 30 A

Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG -55 to +150

Lead Temperature (During Soldering)

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

o

C) Unless Otherwise Specified

FRM450D, R, H UNITS

10

6

150

60

1.20

A
A

W
W

W/oC

o

C

o

C

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

4-1

File Number 3236.1

FRM450D, FRM450R, FRM450H

Pre-Radiation Electrical Specifications TC = +25

o

C, Unless Otherwise Specified

LIMITS

PARAMETER SYMBOL TEST CONDITIONS

Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA 500 - V
Gate-Threshold Volts VGS(th) VDS = VGS, ID = 1mA 2.0 4.0 V
Gate-Body Leakage Forward IGSSF VGS = +20V - 100 nA
Gate-Body Leakage Reverse IGSSR VGS = -20V - 100 nA
Zero-Gate Voltage

Drain Current

IDSS1
IDSS2
IDSS3

VDS = 500V, VGS = 0
VDS = 400V, VGS = 0
VDS = 400V, VGS = 0, TC = +125oC

-

-

-

1

0.025

0.25
Rated Avalanche Current IAR Time = 20µs - 30 A
Drain-Source On-State Volts VDS(on) VGS = 10V, ID = 10A - 6.30 V
Drain-Source On Resistance RDS(on) VGS = 10V, ID = 6A - 0.600 Ω
Turn-On Delay Time td(on) VDD = 250V, ID = 10A - 160
Rise Time tr Pulse Width = 3µs - 260
Turn-Off Delay Time td(off) Period = 300µs, Rg = 25Ω - 750
Fall Time tf 0 ≤ VGS ≤ 10 (See Test Circuit) - 180
Gate-Charge Threshold QG(th)

Gate-Charge Total QGM 125 502

VDD =250V, ID = 10A

418

IGS1 = IGS2

Plateau Voltage VGP 3 14 V

0 ≤ VGS ≤ 20

Gate-Charge Source QGS 8 34
Gate-Charge Drain QGD 30 123
Diode Forward Voltage VSD ID = 10A, VGD = 0 0.6 1.8 V
Reverse Recovery Time TT I = 10A; di/dt = 100A/µs - 3000 ns
Junction-To-Case Rθjc - 0.83
Junction-To-Ambient Rθja Free Air Operation - 30

UNITSMIN MAX

o

mA

ns

ncGate-Charge On State QG(on) 64 258

nc

C/W

0V

VGS = 12V

ELECTRONIC SWITCH OPENS

50Ω

L

WHEN I

V

DS

V

DD

R

L

V

DS

VARY t

TO OBTAIN

DUT

R

GS

0V

P

REQUIRED PEAK I

VGS≤ 20V

t

P

CURRENT

TRANSFORMER

AS

50Ω

+

I

AS

-

DUT

IS REACHED

AS

FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT

4-2

+

V

DD

-

50V-150V

FRM450D, FRM450R, FRM450H

Post-Radiation Electrical Specifications TC = +25

PARAMETER SYMBOL TYPE TEST CONDITIONS

Drain-Source
Breakdown Volts

Gate-Source
Threshold Volts

Gate-Body
Leakage Forward

Gate-Body
Leakage Reverse

Zero-Gate Voltage
Drain Current

Drain-Source
On-State Volts

(Note 4, 6) BVDSS FRM450D, R VGS = 0, ID = 1mA 500 - V

(Note 5, 6) BVDSS FRM450H VGS = 0, ID = 1mA 475 - V

(Note 4, 6) VGS(th) FRM450D, R VGS = VDS, ID = 1mA 2.0 4.0 V

(Note 3, 5, 6) VGS(th) FRM450H VGS = VDS, ID = 1mA 1.5 4.5 V

(Note 4, 6) IGSSF FRM450D, R VGS = 20V, VDS = 0 - 100 nA

(Note 5, 6) IGSSF FRM450H VGS = 20V, VDS = 0 - 200 nA

(Note 2, 4, 6) IGSSR FRM450D, R VGS = -20V, VDS = 0 - 100 nA

(Note 2, 5, 6) IGSSR FRM450H VGS = -20V, VDS = 0 - 200 nA

(Note 4, 6) IDSS FRM450D, R VGS = 0, VDS = 400V - 25 µA

(Note 5, 6) IDSS FRM450H VGS = 0, VDS = 400V - 100 µA

(Note 1, 4, 6) VDS(on) FRM450D, R VGS = 10V, ID = 10A - 6.3 V

(Note 1, 5, 6) VDS(on) FRM450H VGS = 16V, ID = 10A - 9.0 V

o

C, Unless Otherwise Specified

LIMITS

UNITSMIN MAX

Drain-Source
On Resistance

NOTES:

1. Pulse test, 300µs max

2. Absolute value

3. Gamma = 300KRAD(Si)

4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E12

5. Gamma = 1000KRAD(Si). Neutron = 3E12

6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS

7. Gamma data taken 12/18/89 on TA 17655 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401

8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989

9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988

(Note 1, 4, 6) RDS(on) FRM450D, R VGS = 10V, ID = 6A - 0.600 Ω

(Note 1, 5, 6) RDS(on) FRM450H VGS = 14V, ID = 6A - 0.860 Ω

4-3

FRM450D, FRM450R, FRM450H

Typical Performance Characteristics

4-4

FRM450D, FRM450R, FRM450H

Rad Hard Data Packages - Intersil Power Transistors

TXV Equivalent

1. Rad Hard TXV Equivalent - Standard Data Package

A. Certificate of Compliance

B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
D. Group A - Attributes Data Sheet
E. Group B - Attributes Data Sheet

F. Group C - Attributes Data Sheet
G. Group D - Attributes Data Sheet

2. Rad Hard TXV Equivalent - Optional Data Package

A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet

- Precondition Lot Traveler

- Pre and Post Burn-In Read and Record
Data

D. Group A - Attributes Data Sheet

- Group A Lot Traveler

E. Group B - Attributes Data Sheet

- Group B Lot Traveler

- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)

- Bond Strength Data (Subgroup B3)

- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)

F. Group C - Attributes Data Sheet

- Group C Lot Traveler

- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)

- Bond Strength Data (Subgroup C6)

G. Group D - Attributes Data Sheet

- Group D Lot Traveler

- Pre and Post RAD Read and Record Data

Class S - Equivalents

1. Rad Hard “S” Equivalent - Standard Data Package

A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report

E. Preconditioning Attributes Data Sheet

Hi-Rel Lot Traveler
HTRB - Hi Temp Gate Stress Post Reverse
Bias Data and Delta Data
HTRB - Hi T emp Drain Stress Post Reverse
Bias Delta Data

F. Group A - Attributes Data Sheet
G. Group B - Attributes Data Sheet
H. Group C - Attributes Data Sheet

I. Group D - Attributes Data Sheet

2. Rad Hard Max. “S” Equivalent - Optional Data Package

A. Certificate of Compliance

B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report

E. Preconditioning - Attributes Data Sheet

- Hi-Rel Lot Traveler

- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data

- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data

- X-Ray and X-Ray Report

F. Group A - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Subgroups A2, A3, A4, A5 and A7 Data

G. Group B - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Subgroups B1, B3, B4, B5 and B6 Data

H. Group C - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Subgroups C1, C2, C3 and C6 Data

I. Group D - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Pre and Post Radiation Data

4-5

FRM450D, FRM450R, FRM450H

TO-204AA

JEDEC TO-204AA HERMETIC STEEL PACKAGE

ØD

A

SEATING
PLANE

R

1

ØP

TERM. 3

SYMBOL

INCHES MILLIMETERS

NOTESMIN MAX MIN MAX

A 0.310 0.330 7.88 8.38 -

Øb

s

q

12

R

Øb

A

1

0.060 0.065 1.53 1.65 -

Øb 0.038 0.042 0.97 1.06 2, 3

1

Øb

0.138 0.145 3.51 3.68 -

1

ØD - 0.800 - 20.32 -

1

A

L

e

e

1

e 0.215 TYP 5.46 TYP 4

e

1

0.430 BSC 10.92 BSC 4

L 0.430 - 10.93 - -

ØP 0.155 0.160 3.94 4.06 -

q 1.187 BSC 30.15 BSC ­R 0.495 0.525 12.58 13.33 -

R

1

0.131 0.185 3.33 4.69 -

s 0.655 0.675 16.64 17.14 -

NOTES:

1. These dimensions are within allowable dimensions of Rev. C of
JEDEC TO-204AA outline dated 11-82.

2. Lead dimension (without solder).

3. Add typically 0.002 inches (0.05mm) for solder coating.

4. Position of lead to be measured 0.250 inches (6.35mm) from bot­tom of seating plane.

5. Controlling dimension: Inch.

6. Revision 2 dated 6-93.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under an y patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

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P. O. Box 883, Mail Stop 53-204
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TEL: [phone]
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TEL: [phone]
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4-6

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