Datasheet FRM234R, FRM234D Datasheet (Intersil Corporation)

June 1998

FRM234D, FRM234R,

FRM234H

7A, 250V, 0.70 Ohm, Rad Hard,

N-Channel Power MOSFETs

Features

• 7A, 250V, RDS(on) = 0.70Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

- Performance Permits Limited Use to 3000KRAD(Si)

• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

- Survives 2E12 Typically If Current Limited to IDM

• Photo Current - 4.0nA Per-RAD(Si)/sec Typically

• Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

2

2

Description

The Intersil Corporation has designed a series of SECOND GENERATION hard­ened power MOSFETs of both N and P channel enhancement types with ratings
from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose
hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness
ranging from 1E13n/cm
rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and
2E12 with current limiting.

This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

2

for 500V product to 1E14n/cm2 for 100V product. Dose

Package

Symbol

o

)

TO-204AA

D

G

S

This part may be supplied as a die or in various packages other than shown above .
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.

Absolute Maximum Ratings (TC = +25

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 250 V

Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 250 V

Continuous Drain Current

TC = +25

TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 21 A

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V

Maximum Power Dissipation

TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM 21 A

Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS 7 A

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 21 A

Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG -55 to +150

Lead Temperature (During Soldering)

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

o

C) Unless Otherwise Specified

FRM234D, R, H UNITS

7
4

75
30

0.60

A
A

W
W

W/oC

o

C

o

C

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

4-1

File Number 3250.2

FRM234D, FRM234R, FRM234H

Pre-Radiation Electrical Specifications TC = +25

o

C, Unless Otherwise Specified

LIMITS

PARAMETER SYMBOL TEST CONDITIONS

Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA 250 - V
Gate-Threshold Volts VGS(th) VDS = VGS, ID = 1mA 2.0 4.0 V
Gate-Body Leakage Forward IGSSF VGS = +20V - 100 nA
Gate-Body Leakage Reverse IGSSR VGS = -20V - 100 nA
Zero-Gate Voltage

Drain Current

IDSS1
IDSS2
IDSS3

VDS = 250V, VGS = 0
VDS = 200V, VGS = 0
VDS = 200V, VGS = 0, TC = +125oC

-

-

-

1

0.025

0.25
Rated Avalanche Current IAR Time = 20µs - 21 A
Drain-Source On-state Volts VDS(on) Vgs = 10V, ID = 7A - 5.15 V
Drain-Source On Resistance RDS(on) VGS = 10V, ID = 4A - .70 Ω
Turn-On Delay Time td(on) VDD = 125V, ID = 7A - 32
Rise Time tr Pulse Width = 3µs - 104
Turn-Off Delay Time td(off) Period = 300µs, Rg = 25Ω - 176
Fall Time tf 0 ≤ VGS ≤ 10 (See Test Circuit) - 80
Gate-Charge Threshold QG(th)

Gate-Charge Total QGM 31 126

VDD = 125V, ID = 7A

14

IGS1 = IGS2

Plateau Voltage VGP 3 13 V

0 ≤ VGS ≤ 20

Gate-Charge Source QGS 3 12
Gate-Charge Drain QGD 8 33
Diode Forward Voltage VSD ID = 7A, VGD = 0 0.6 1.8 V
Reverse Recovery Time TT I = 7A; di/dt = 100A/µs - 1200 ns
Junction-To-Case Rθjc - 1.67
Junction-To-Ambient Rθja Free Air Operation - 60

UNITSMIN MAX

o

mA

ns

ncGate-Charge On State QG(on) 16 66

nc

C/W

0V

VGS = 12V

ELECTRONIC SWITCH OPENS

50Ω

L

WHEN I

V

DS

V

DD

R

L

V

DS

VARY t

TO OBTAIN

DUT

R

GS

0V

P

REQUIRED PEAK I

VGS≤ 20V

t

P

CURRENT

TRANSFORMER

AS

50Ω

+

I

AS

-

DUT

IS REACHED

AS

FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT

4-2

+

V

DD

-

50V-150V

FRM234D, FRM234R, FRM234H

Post-Radiation Electrical Specifications TC = +25

PARAMETER SYMBOL TYPE TEST CONDITIONS

Drain-Source
Breakdown Volts

Gate-Source
Threshold Volts

Gate-Body
Leakage Forward

Gate-Body
Leakage Reverse

Zero-Gate Voltage
Drain Current

Drain-Source
On-state Volts

(Note 4, 6) BVDSS FRM234D, R VGS = 0, ID = 1mA 250 - V

(Note 5, 6) BVDSS FRM234H VGS = 0, ID = 1mA 238 - V

(Note 4, 6) VGS(th) FRM234D, R VGS = VDS, ID = 1mA 2.0 4.0 V

(Note 3, 5, 6) VGS(th) FRM234H VGS = VDS, ID = 1mA 1.5 4.5 V

(Note 4, 6) IGSSF FRM234D, R VGS = 20V, VDS = 0 - 100 nA

(Note 5, 6) IGSSF FRM234H VGS = 20V, VDS = 0 - 200 nA

(Note 2, 4, 6) IGSSR FRM234D, R VGS = -20V, VDS = 0 - 100 nA

(Note 2, 5, 6) IGSSR FRM234H VGS = -20V, VDS = 0 - 200 nA

(Note 4, 6) IDSS FRM234D, R VGS = 0, VDS = 200V - 25 µA

(Note 5, 6) IDSS FRM234H VGS = 0, VDS = 200V - 100 µA

(Note 1, 4, 6) VDS(on) FRM234D, R VGS = 10V, ID = 7A - 5.15 V

(Note 1, 5, 6) VDS(on) FRM234H VGS = 16V, ID = 7A - 7.72 V

o

C, Unless Otherwise Specified

LIMITS

UNITSMIN MAX

Drain-Source
On Resistance

NOTES:

1. Pulse test, 300µs max

2. Absolute value

3. Gamma = 300KRAD(Si)

4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 1E13

5. Gamma = 1000KRAD(Si). Neutron = 1E13

6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS

7. Gamma data taken 1/19/90 on TA17633 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA
19401

8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989

9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988

(Note 1, 4, 6) RDS(on) FRM234D, R VGS = 10V, ID = 4A - 0.700 Ω

(Note 1, 5, 6) RDS(on) FRM234H VGS = 14V, ID = 4A - 1.05 Ω

4-3

FRM234D, FRM234R, FRM234H

Typical Performance Characteristics

4-4

FRM234D, FRM234R, FRM234H

Rad Hard Data Packages - Intersil Power Transistors

TXV Equivalent

1. Rad Hard TXV Equivalent - Standard Data Package

A. Certificate of Compliance
B. Assembly Flow Chart

C. Preconditioning - Attributes Data Sheet
D. Group A - Attributes Data Sheet
E. Group B - Attributes Data Sheet

F. Group C - Attributes Data Sheet

G. Group D - Attributes Data Sheet

2. Rad Hard TXV Equivalent - Optional Data Package

A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet

- Precondition Lot Traveler

- Pre and Post Burn-In Read and Record
Data

D. Group A - Attributes Data Sheet

- Group A Lot Traveler

E. Group B - Attributes Data Sheet

- Group B Lot Traveler

- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)

- Bond Strength Data (Subgroup B3)

- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)

F. Group C - Attributes Data Sheet

- Group C Lot Traveler

- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)

- Bond Strength Data (Subgroup C6)

G. Group D - Attributes Data Sheet

- Group D Lot Traveler

- Pre and Post RAD Read and Record Data

Class S - Equivalents

1. Rad Hard “S” Equivalent - Standard Data Package

A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report

E. Preconditioning Attributes Data Sheet

Hi-Rel Lot Traveler
HTRB - Hi Temp Gate Stress Post Reverse
Bias Data and Delta Data
HTRB - Hi T emp Drain Stress Post Reverse
Bias Delta Data

F. Group A - Attributes Data Sheet
G. Group B - Attributes Data Sheet
H. Group C - Attributes Data Sheet

I. Group D - Attributes Data Sheet

2. Rad Hard Max. “S” Equivalent - Optional Data Package

A. Certificate of Compliance

B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report

E. Preconditioning - Attributes Data Sheet

- Hi-Rel Lot Traveler

- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data

- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data

- X-Ray and X-Ray Report

F. Group A - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Subgroups A2, A3, A4, A5 and A7 Data

G. Group B - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Subgroups B1, B3, B4, B5 and B6 Data

H. Group C - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Subgroups C1, C2, C3 and C6 Data

I. Group D - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Pre and Post Radiation Data

4-5

FRM234D, FRM234R, FRM234H

TO-204AA

JEDEC TO-204AA HERMETIC STEEL PACKAGE

ØD

A

SEATING
PLANE

R

1

ØP

TERM. 3

SYMBOL

INCHES MILLIMETERS

NOTESMIN MAX MIN MAX

A 0.310 0.330 7.88 8.38 -

Øb

s

q

12

R

Øb

A

1

0.060 0.065 1.53 1.65 -

Øb 0.038 0.042 0.97 1.06 2, 3

1

Øb

0.138 0.145 3.51 3.68 -

1

ØD - 0.800 - 20.32 -

1

A

L

e

e

1

e 0.215 TYP 5.46 TYP 4

e

1

0.430 BSC 10.92 BSC 4

L 0.430 - 10.93 - -

ØP 0.155 0.160 3.94 4.06 -

q 1.187 BSC 30.15 BSC ­R 0.495 0.525 12.58 13.33 -

R

1

0.131 0.185 3.33 4.69 -

s 0.655 0.675 16.64 17.14 -

NOTES:

1. These dimensions are within allowable dimensions of Re v. C of
JEDEC TO-204AA outline dated 11-82.

2. Lead dimension (without solder).

3. Add typically 0.002 inches (0.05mm) for solder coating.

4. Position of lead to be measured 0.250 inches (6.35mm) from bot­tom of seating plane.

5. Controlling dimension: Inch.

6. Revision 2 dated 6-93.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under an y patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

Sales Office Headquarters

NORTH AMERICA

Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: [phone]
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Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: [phone]
FAX: [phone]

4-6

ASIA

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Taiwan Limited
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Republic of China
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FAX: [phone]