Datasheet FQU8P10, FQD8P10 Datasheet (Fairchild Semiconductor)

Page 1
FQD8P10 / FQU8P10
100V P-Channel MOSFET
FQD8P10 / FQU8P10
TM
QFET
General Description
Features
• -6.6A, -100V, R
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
= 0.53 @VGS = -10 V
DS(on)
suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
D
GS
D
D-PAK
FQD Series
GSD
I-PAK
FQU Series
G
S
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter FQD8P10 / FQU8P10 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt P
D
Drain-Source Voltage -100 V Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
-6.6 A
-4.2 A
-26.4 A Gate-Source Voltage ± 30 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) * Power Dissipation (T
= 25°C)
C
(Note 2) (Note 1) (Note 1) (Note 3)
150 mJ
-6.6 A
4.4 mJ
-6.0 V/ns
2.5 W 44 W
- Derate above 25°C 0.35 W/°C
, T
T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
300 °C
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2002 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case -- 2.84 °C/W Thermal Resistance, Junction-to-Ambient * -- 50 °C/W Thermal Resistance, Junction-to-Ambient -- 110 °C/W
Rev. B, August 2002
Page 2
FQD8P10 / FQU8P10
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Te st Conditions Min Typ Max Units
Off Characteristics
BV
DSS
BV
DSS
/ ∆T I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = -250 µA
V
GS
I
= -250 µA, Referenced to 25°C
D
V
= -100 V, VGS = 0 V
DS
V
= -80 V, TC = 125°C
DS
V
= -30 V, VDS = 0 V
GS
= 30 V, VDS = 0 V
V
GS
-100 -- -- V
-- -0.1 -- V/°C
-- -- -1 µA
-- -- -10 µA
-- -- -100 nA
-- -- 100 nA
On Characteristics
V R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage Static Drain-Source
On-Resistance Forward Transconductance
V
= VGS, ID = -250 µA
DS
= -10 V, ID = -3.3 A
V
GS
= -40 V, ID = -3.3 A
V
DS
(Note 4)
-2.0 -- -4.0 V
-- 0.41 0.53
-- 4.1 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance Output Capacitance -- 120 155 pF Reverse Transfer Capacitance -- 30 40 pF
= -25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 360 470 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q Q Q
g gs gd
Turn-On Delay Time Turn-On Rise Time -- 110 230 ns Turn-Off Delay Time -- 20 50 ns Turn-Off Fall Time -- 35 80 n s Total Gate Charge Gate-Source Charge -- 3.0 -- nC Gate-Drain Charge -- 6.4 -- nC
= -50 V, ID = -8.0 A,
V
DD
= 25
R
G
V
= -80 V, ID = -8.0 A,
DS
V
GS
= -10 V
(Note 4, 5)
(Note 4, 5)
-- 11 30 ns
-- 12 15 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.2mH, IAS = -6.6A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD -8.0A, di/dt 300A/µs, VDD BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2002 Fairchild Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward Current -- -- -6.6 A Maximum Pulsed Drain-Source Diode Forward Current -- -- -26.4 A
= 0 V, IS = -6.6 A
Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- 0.35 -- µC
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = -8.0 A,
V
GS
/ dt = 100 A/µs
dI
F
-- -- -4.0 V
-- 98 -- ns
(Note 4)
Rev. B, August 2002
Page 3
Typical Characteristics
V
GS
Top : -15.0 V
1
10
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-5.5 V
-5.0 V
0
10
Botto m : -4.5 V
-1
, Drain Current [A]
10
D
-I
-2
10
-1
10
0
10
-VDS, Drain-Source Voltage [V]
Notes :
1. 250μs Pulse Test
2. T
= 25
C
1
10
FQD8P10 / FQU8P10
1
10
0
10
, Drain Current [A]
D
-I
-1
10
2
150
25
-55
46810
Notes :
1. V
= -40V
DS
2. 250μs Pulse Test
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s
1.5
1.2
0.9
[],
DS(on)
R
0.6
Drain-Source On-Resistance
0.3
0.0 0 5 10 15 20 25
VGS = - 10V
VGS = - 20V
-ID , Drain Curren t [A]
Figure 3. On-Resistance Variati on vs.
Drain Current and Gate Voltage
900
800
700
600
500
400
300
Capacitance [pF]
200
100
0
-1
10
C
oss
C
iss
C
rss
-VDS, Drain-Source Voltage [V]
C
= C
iss
= Cds + C
C
oss
C
= C
rss
0
10
10
Note : T
= 25
J
+ Cgd (Cds = shorted)
gs
gd
gd
Notes :
= 0 V
1. V
GS
2. f = 1 MH z
1
1
10
0
10
25
, Reve rs e D ra in Current [A ]
150
DR
-I
-1
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Notes :
= 0V
1. V
GS
2. 250μs Pulse Test
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
-V
0
0 2 4 6 8 10 12 14
QG, Tota l Gate Charge [n C]
VDS = -20V
VDS = -50V
VDS = -80V
Note : ID = -8.0 A
Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
Page 4
Typical Characteristics (Continued)
FQD8P10 / FQU8P10
1.2
1.1
1.0
, (Norm a liz e d )
DSS
-BV
0.9
Drain-Source Breakdown Voltage
0.8
-100 -50 0 50 100 150 200
1. V
2. I
Notes :
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
2
10
1
10
0
10
, Dra i n Curre nt [A]
D
-I
-1
10
0
10
-VDS, Drain-Source Voltage [V]
Operation in This Area is Limited by R
DS(on)
DC
Notes :
1. T
= 25 oC
C
2. T
= 150 oC
J
3. Single Pulse
1
10
100 µs
1 ms
10 ms
= 0 V
GS
= -250 μA
D
3.0
2.5
2.0
1.5
, (Normalized)
1.0
DS(ON)
R
Drain-Source On-Resistance
0.5
0.0
-100 -50 0 50 100 150 200
Notes :
= -10 V
1. V
GS
2. I
= -3.3 A
D
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
7
6
5
4
2
10
3
, Drain Current [A]
D
2
-I
1
0
25 50 75 100 125 150
TC, Case Temperature [℃]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
©2002 Fairchild Semiconductor Corporation
10
(t), Therm al Response
JC
θ
Z
vs. Case Temperature
D=0.5
0
10
0.2
0.1
0.05
-1
0.02
0.01
-5
10
single pulse
-4
10
-3
10
10
-2
No te s :
(t) = 2.84 ℃/W M ax .
1. Z
θ
JC
2. D u ty F a c to r , D = t
3. TJM - TC = PDM * Z
P
DM
t
1
t
-1
10
10
1/t2
(t)
θ
JC
2
0
1
10
t1, Square W ave Pulse Duration [sec]
Figure 11. Transient Thermal Response Cur ve
Rev. B, August 2002
Page 5
12V
12V
200nF
200nF
-3mA
-3mA
50K
50K
FQD8P10 / FQU8P10
Gate Charge Test Circuit & Waveform
V
V
GS
DS
DS
GS
-10V
-10V
Q
Q
g
g
Q
Q
gs
gs
Q
Q
gd
gd
Charge
Charge
Same Type
Ω
Ω
300nF
300nF
V
V
GS
GS
Same Type
as DUT
as DUT
DUT
DUT
V
V
Resistive Switching Test Circuit & Waveforms
-10V
-10V
-10V
-10V
R
R
L
DUT
DUT
L
V
V
DD
DD
V
V
GS
GS
10%
10%
V
V
DS
DS
V
V
DS
DS
V
V
GS
GS
R
R
G
G
t
t
d(on)tr
d(on)tr
90%
90%
t
t
on
on
t
t
off
off
t
t
d(off)
d(off)
t
t
f
f
Unclamped Inductive Switching Test Circuit & Waveforms
BV
BV
DSS
L
LL
V
V
DS
DS
I
IDI
D
D
V
V
DD
BV
BV
DD
I
I
AS
AS
DSS
DSS
R
R
G
G
DUT
DUT
t
t
p
p
V
V
DD
DD
1
1
1
1
----
----
----
----
E
E
=LI
E
=LI
=LI
AS
AS
AS
2
2
2
2
2
2
2
AS
AS
AS
t
t
p
p
I
I
(t)
(t)
D
D
DSS
--------------------
-------------------­BV
BV
DSS-VDD
DSS-VDD
Time
Time
V
(t)
V
(t)
DS
DS
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
Page 6
Peak Diode Recovery dv /d t Test Circuit & Waveforms
+
+
V
V
DS
DS
DUT
DUT
I
I
SD
SD
Driver
Driver
R
R
G
G
V
V
GS
GS
_
_
L
LL
Compliment of DUT
Compliment of DUT
(N-Channel)
(N-Channel)
• dv/dt controlled by R
• dv/dt controlled by R
•ISDcontroll ed by pulse peri od
•ISDcontroll ed by pulse peri od
G
G
FQD8P10 / FQU8P10
V
V
DD
DD
V
V
GS
GS
( Driver )
( Driver )
I
I
SD
SD
( DUT )
( DUT )
V
V
DS
DS
( DUT )
( DUT )
Gate Pulse Width
Gate Pulse Width
Gate Pulse Width
--------------------------
--------------------------
--------------------------
D =
D =
D =
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
Body Diode Reverse Current
Body Diode Reverse Current
I
I
RM
RM
IFM, Body Diode Forward Current
IFM, Body Diode Forward Current
V
V
SD
SD
Body Diode
Body Diode
Forward Voltage Drop
Forward Voltage Drop
Body Diode Recoverydv/dt
Body Diode Recoverydv/dt
di/dt
di/dt
10V
10V
V
V
DD
DD
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
Page 7
Package Dimensions
6.60 ±0.20
FQD8P10 / FQU8P10
D-PAK
0.60 ±0.20
0.80 ±0.20
MAX0.96
2.30TYP
[2.30±0.20]
5.34 ±0.30 (4.34)(0.50) (0.50)
0.76 ±0.10
2.30TYP
[2.30±0.20]
2.70 ±0.20
0.70 ±0.20
6.10 ±0.20
9.50 ±0.30
±0.10
0.91
0.89 ±0.10
6.60 ±0.20 (5.34)
(5.04) (1.50)
2.30 ±0.10
0.50 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
(0.90)
(0.70)
MIN0.55
(1.00)
©2002 Fairchild Semiconductor Corporation
9.50 ±0.30
(2XR0.25)
6.10 ±0.20
2.70 ±0.20 (0.10) (3.05)
0.76 ±0.10
Dimensions in Millimeters
Rev. B, August 2002
Page 8
Package Dimensions
(Continued)
FQD8P10 / FQU8P10
I-PAK
(0.50) (0.50)(4.34)
0.60 ±0.20
0.80 ±0.10
MAX0.96
0.76 ±0.10
6.60 ±0.20
5.34 ±0.20
0.70 ±0.20
1.80 ±0.20
2.30 ±0.20
0.50 ±0.10
6.10 ±0.20
16.10 ±0.30
9.30 ±0.30
2.30TYP
[2.30±0.20]
©2002 Fairchild Semiconductor Corporation
2.30TYP
[2.30±0.20]
0.50 ±0.10
Dimensions in Millimeters
Rev. B, August 2002
Page 9
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Semiconductor reserves the right to make changes at any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I1
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