Datasheet FQT4N20L Datasheet (Fairchild)

FQT4N20L

200V LOGIC N-Channel MOSFET

FQT4N20L

May 2001

TM

QFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for

Features

• 0.85A, 200V, R

• Low gate charge ( typical 4.0 nC)

• Low Crss ( typical 6.0 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Low level gate drive requirement allowing direct opration from logic drivers

= 1.35Ω @VGS = 10 V

DS(on)

uninterrupted power supply, motor control.

D

!

"

" "

"

!

S

D

G

Absolute Maximum Ratings T

S

SOT-223

FQT Series

= 25°C unless otherwise noted

C

!

G

Symbol Parameter FQT4N20L Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

Drain-Source Voltage 200 V Drain Current

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 70°C)

C

(Note 1)

0.85 A

0.68 A

3.4 A Gate-Source Voltage ± 20 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2) (Note 1) (Note 1) (Note 3)

52 mJ

0.85 A

0.22 mJ

5.5 V/ns

2.2 W

- Derate above 25°C 0.018 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

Thermal Resistance, Junction-to-Ambient * -- 57 °C/W

FQT4N20L

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV ∆B ∆T I

DSS

I

GSSF

I

GSSR

DSS

VDSS

J

Drain-Source Breakdown Voltage

/

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 200 V, VGS = 0 V

DS

V

= 160 V, TC = 125°C

DS

V

= 20 V, VDS = 0 V

GS

= -20 V, VDS = 0 V

V

GS

200 -- -- V

-- 0.16 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage Static Drain-Source

On-Resistance Forward Transconductance

V

= VGS, ID = 250 µA

DS

V

= 10 V, ID = 0.425 A

GS

= 5 V, ID = 0.425 A

V

GS

V

= 30 V, ID = 0.425 A

DS

(Note 4)

1.0 -- 2.0 V

1.10

--

1.13

1.35

1.40

-- 1.42 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance Output Capacitance -- 36 45 pF Reverse Transfer Capacitance -- 6 8 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 240 310 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

g gs gd

Turn-On Delay Time Turn-On Rise Time -- 70 150 ns Turn-Off Delay Time -- 15 40 ns Turn-Off Fall Time -- 40 90 ns Total Gate Charge Gate-Source Charge -- 1.0 -- nC Gate-Drain Charge -- 1.9 -- nC

= 100 V, ID = 3.8 A,

V

DD

= 25 Ω

R

G

= 160 V, ID = 3.8 A,

V

DS

V

GS

= 5 V

(Note 4, 5)

-- 7 25 ns

-- 4.0 5.2 nC

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 108mH, IAS = 0.85A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 3.8A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 0.85 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 3.4 A

= 0 V, IS = 0.85 A

Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- 0.25 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 3.8 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.5 V

-- 90 -- ns

(Note 4)

Rev. A, May 2001

Typical Characteristics

FQT4N20L

V

GS

Top : 10 V

8.0 V

6.0 V

5.0 V

4.5 V

4.0 V

0

10

3.5 V Bottom : 3.0 V

, Dra in C u rr e n t [A ]

D

I

-1

10

-1

10

0

10

※

Notes :

1. 250μs Pulse T est

℃

= 25

2. T

C

1

10

VDS , Dra in- S o ur ce Voltag e [V ]

8

6

]

Ω

, [

4

DS(on)

R

2

Drain-Source On-Resistance

0

02468

VGS = 5 V

VGS = 10V

ID , Drai n Curren t [A]

0

10

, Dra in C u rr en t [A ]

D

I

10

℃

150

℃

25

-1

0246810

℃

-55

※

Notes :

1. V

= 30V

DS

2. 250μs Pulse Test

VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

0

10

℃

150

℃

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

25

※

Note s :

= 0V

1. V

GS

2. 250μs Pulse Test

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 40V

※

Note : I

450

400

350

300

250

200

150

Capacitance [pF]

100

50

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

iss

C

oss

C

rss

0

10

1

10

※

Note s :

= 0 V

1. V

GS

2. f = 1 MHz

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

012345678

VDS = 100V

VDS = 160V

QG, Tota l Gate Charge [n C]

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

= 3.8 A

D

Typical Characteristics (Continued)

FQT4N20L

1.2

1.1

1.0

, (N orma liz e d )

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

※

1. V

2. I

Note s :

D

= 0 V

GS

= 250 μA

TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage Variation

vs. Temperature

1

10

0

10

-1

10

, Drain Current [A]

D

I

-2

10

-3

10

-1

10

Operation in This Area is Limited by R

DS(on)

100 ms

DC

※

Note s :

1. T

= 25 oC

C

2. T

= 150 oC

J

3. Single Pulse

0

10

1

10

VDS, Drain-Source Voltage [V]

10 ms

1 ms

10

100 µs

2

3.0

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

※

Notes :

= 10 V

1. V

GS

2. I

= 0.425 A

D

TJ, Junction Temperature [oC]

Figure 8. On-Resistance Variation

vs. Temperature

1.0

0.8

0.6

0.4

, Dra in Curre n t [A ]

D

I

0.2

0.0 25 50 75 100 125 150

TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

※

Notes :

(t) = 57 ℃/W M a x.

1. Z

θ

JC

2. D u ty F a c to r, D = t

3. TJM - TC = PDM * Z

1/t2

(t)

θ

JC

P

DM

t

1

t

2

-2

-1

10

0

10

1

10

2

10

3

10

(t), Thermal Response Z

2

10

D=0.5

0.2

1

10

0.1

0.05

0.02

0

10

0.01

JC

θ

-1

10

-5

10

-4

sin g le p u ls e

-3

10

t1, Square Wave P ulse Duration [sec]

Figure 11. Transient Thermal Response Cur ve

12V

200nF

3mA

50K

Gate Charge Test Circuit & Waveform

Same Type

Ω

300nF

V

GS

Same Type

as DUT

DUT

V

DS

Resistive Switching Test Circuit & Waveforms

V

5V

GS

FQT4N20L

Q

g

Q

gs

Q

gd

Charge

5V

10V

R

L

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off)

t

f

t

off

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

L

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

AS

2

AS

(t)

I

D

t

p

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

Peak Diode Recovery dv /d t Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontroll ed by pulse peri od

G

FQT4N20L

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recoverydv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

Package Dimensions

FQT4N20L

SOT-223

3.00 ±0.10

2.30 TYP

(0.95) (0.95)

4.60 ±0.25

0.70 ±0.10

MAX1.80

±0.20

1.75

±0.20

3.50 (0.60) (0.60)

0.25

+0.10 –0.05

0.08MAX

+0.04

0.06

–0.02

0°~10°

0.65 ±0.20

7.00 ±0.30

1.60 ±0.20

(0.46)

(0.89)

6.50 ±0.20

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™

2

E

CMOS™ EnSigna™ FACT™ FACT Quiet Series™

®

FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™

OPTOPLANAR™ PACMAN

™

POP™ PowerTrench

®

QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER SMART START™ Stealth™

SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET VCX™

®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H2