Datasheet FQT2P25 Datasheet (Fairchild Semiconductor)

FQT2P25

250V P-Channel MOSFET

FQT2P25

May 2001

TM

QFET

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

Features

• -0.55A, -250V, R

• Low gate charge ( typical 6.5 nC)

• Low Crss ( typical 6.5 pF)

• Fast switching

• Improved dv/dt capability

= 4.0Ω @VGS = 10 V

DS(on)

performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.

S

!!!!

D

●●●●

▶▶▶▶

▲▲▲▲

●●●●

!!!!

D

G

Absolute Maximum Ratings T

S

SOT-223

FQT Series

= 25°C unless otherwise noted

C

!!!!

G

Symbol Parameter FQT2P25 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

Drain-Source Voltage -250 V Drain Current

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

-0.55 A

-0.35 A

-2.2 A Gate-Source Voltage ± 30 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2) (Note 1) (Note 1) (Note 3)

120 mJ

-0.55 A

0.25 mJ

-5.5 V/ns

2.5 W

- Derate above 25°C 0.02 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

Thermal Resistance, Junction-to-Ambient * -- 50 °C/W

FQT2P25

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parame ter Test Conditions Min Typ Max Units

Off Characteristics

BV ∆B ∆T I

DSS

I

GSSF

I

GSSR

DSS

VDSS

J

Drain-Source Breakdown Voltage

/

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = -250 µA

V

GS

I

= -250 µA, Referenced to 25°C

D

V

= -250 V, VGS = 0 V

DS

V

= -200 V, TC = 125°C

DS

V

= -30 V, VDS = 0 V

GS

= 30 V, VDS = 0 V

V

GS

-250 -- -- V

-- -0.2 -- V/°C

-- -- -1 µA

-- -- -10 µA

-- -- -100 nA

-- -- 100 nA

On Characteristics

V R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage Static Drain-Source

On-Resistance Forward Transconductance

V

= VGS, ID = -250 µA

DS

= -10 V, ID = -0.275 A

V

GS

= -40 V, ID = -0.275 A

V

DS

(Note 4)

-3.0 -- -5.0 V

-- 3.15 4.0 Ω

-- 0.6 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance Output Capacitance -- 40 55 pF Reverse Transfer Capacitance -- 6.5 8.5 pF

= -25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 190 250 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

g gs gd

Turn-On Delay Time Turn-On Rise Time -- 40 90 ns Turn-Off Delay Time -- 12 35 ns Turn-Off Fall Time -- 25 60 n s Total Gate Charge Gate-Source Charge -- 1.8 -- nC Gate-Drain Charge -- 3.0 -- nC

= -125 V, ID = -2.3 A,

V

DD

= 25 Ω

R

G

V

= -200 V, ID = -2.3 A,

DS

V

GS

= -10 V

(Note 4, 5)

-- 8.5 25 ns

-- 6.5 8.5 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

trr Reverse Recovery Time V Qrr Reverse Recovery Charge -- 0.4 -- µC

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 635mH, IAS = -0.55A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -2.3A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- -0.55 A Maximum Pulsed Drain-Source Diode Forward Current -- -- -2.2 A

= 0 V, IS = -0.55 A

Drain-Source Diode Forward Voltage

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = -2.3 A,

GS

dI

/ dt = 100 A/µs

F

(Note 4)

-- -- -5.0 V

-- 110 -- ns

Rev. A, May 2001

Typical Characteristics

FQT2P25

V

GS

Top : -1 5 .0 V

-10.0 V

-8.0 V

0

10

-7.0 V

-6.5 V

-6.0 V Botto m : -5.5 V

-1

10

, Dra in Curre n t [A ]

D

-I

-1

10

0

10

※

Note s :

1. 250μs Pulse Test = 25

2. T

C

1

10

-VDS, Drain-Source Voltage [V]

15

12

9

[Ω],

DS(on)

R

6

Drain-Source On-Resistance

3

0

0.0 1.5 3.0 4.5 6.0

VGS = - 20V

VGS = - 10V

※

Note : T

-ID , Drai n Curren t [A]

0

10

℃

, Dra in C u rr en t [A ]

D

-I

℃

-1

10

246810

150

℃

25

℃

-55

※

Notes :

1. V

= -40V

DS

2. 250μs Pulse Test

-VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

0

10

℃

, Reverse Drain Current [A]

150

DR

-I

℃

= 25

J

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

℃

25

※

Note s :

= 0V

1. V

GS

2. 250μs Pulse Test

-VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

400

300

200

Capacitance [pF]

100

0

-1

10

C

iss

C

oss

C

rss

0

10

= C

rss

gd

※

Note s :

= 0 V

1. V

GS

2. f = 1 MHz

1

10

-VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

012

QG, Tota l Gate Charge [n C]

VDS = -50V

VDS = -125V

VDS = -200V

※

Note : I

34567

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

= -2.3 A

D

Typical Characteristics (Continued)

FQT2P25

1.2

1.1

1.0

, (N o r ma liz e d )

DSS

-BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

※

1. V

2. I

Note s :

D

= 0 V

GS

= -250 μA

TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage Variation

vs. Temperature

1

10

0

10

-1

10

, Drain Current [A]

D

-I

-2

10

-3

10

-1

10

Operation in This Area is Limited by R

DS(on)

DC

※

Note s :

1. T

= 25 oC

C

= 150 oC

2. T

J

3. Single Pulse

0

10

1

10

-VDS, Drain-Source Voltage [V]

10 ms

100 ms

10

1 ms

2

100 µs

2.5

2.0

1.5

, (No rmalize d )

1.0

DS(ON)

R

0.5

Drain-Source On-Resistance

0.0

-100 -50 0 50 100 150 200

※

Note s :

= -10 V

1. V

GS

= -0.275 A

2. I

D

TJ, Junction Temperature [oC]

Figure 8. On-Resistance Variation

vs. Temperature

0.6

0.5

0.4

0.3

0.2

, Dra in Curre n t [A ]

D

-I

0.1

0.0 25 50 75 100 125 150

TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

D=0.5

※

Notes :

(t) = 50 ℃/W M a x.

1. Z

θ

JC

2. D u ty F a c to r , D = t

3. TJM - TC = PDM * Z

P

DM

0

10

1/t2

(t)

θ

JC

t

1

t

2

1

2

10

3

10

(t), Thermal Response Z

1

0.2

10

0.1

0.05

0.02

0

10

0.01

JC

θ

-1

10

-5

10

-4

sin g le p u ls e

-3

10

-2

10

-1

10

t1, Square Wave P ulse Duration [sec]

Figure 11. Transient Thermal Response Cur ve

12V

200nF

-3mA

50KΩ

Gate Charge Test Circuit & Waveform

V

GS

Same Type

as DUT

300nF

V

GS

DUT

-10V

V

DS

Resistive Switching Test Circuit & Waveforms

FQT2P25

Q

g

Q

gs

Q

gd

Charge

-10V

R

L

DUT

L

( 0.5 rated V

V

DD

DS

V

)

in

10%

V

DS

V

DS

R

G

90%

t

d(on)tr

t

on

t

d(off)

t

off

t

f

Unclamped Inductive Switching Test Circuit & Waveforms

BV

L

V

LL

V

DS

V

DD

I

IDI

D

V

BV

V

DD

I

AS

DSS

R

G

DUT

E

AS

1

----

=LL I

2

I

D

(t)

AS

t

BV

DSS

BV

DSS

2

--------------------

p

-- V

DD

Time

V

(t)

V

(t)

DS

Peak Diode Recovery dv /d t Test Circuit & Waveforms

DUT

I

ISI

S

Driver

R

G

V

GS

+

V

DS

_

L

LL

Compliment of DUT

(N-Channel)

• dv/dt control le d by R

•IScontrolled by pulse period

G

FQT2P25

V

DD

V

GS

( Driver )

I

S

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

Body Diode Reverse Current

I

RM

IFM, Body Diode Forward Current

V

f

Body Diode

Forward Voltage Drop

Body Diode Recoverydv/dt

di/dt

10V

V

DD

Package Dimensions

FQT2P25

SOT-223

3.00 ±0.10

2.30 TYP

(0.95) (0.95)

4.60 ±0.25

0.70 ±0.10

MAX1.80

±0.20

1.75

±0.20

3.50 (0.60) (0.60)

0.25

+0.10 –0.05

0.08MAX

0.65 ±0.20

+0.04

0.06

–0.02

0°~10°

7.00 ±0.30

1.60 ±0.20

(0.46)

(0.89)

6.50 ±0.20

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

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2

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1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Producti on This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H2