Datasheet FQS4900 Datasheet (Fairchild Semiconductor)

August 2000

FQS4900

Dual N & P-Channel, Logic Level MOSFET

General Description

These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high interface in telephone sets.

D2

D1

S1

G1

S2

G2

QFET

QFETQFET

Features

• N-Channel 1.3A, 60V, R R P-Channel -0.3A, -300V, R R

• Low gate charge ( typical N-Channel 1.6 nC) ( typical P-Channel 3.6 nC)

• Fast switching

• Improved dv/dt capability

!

5

6

7

8

!

"

!

! !

!

$

!

! !

!

= 0.55 Ω @ VGS = 10 V

DS(on)

= 0.65 Ω @ VGS = 5 V

DS(on)

= 15.5 Ω @ VGS = -10 V

DS(on)

= 16 Ω @ VGS =- 5 V

DS(on)

#

4

3

2

1

TM

Absolute Maximum Ratings T

= 25°C unless otherwise noted

A

Symbol Parameter N-Channel P-Channel Units

V

DSS

I

D

I

DM

V

GSS

dv/dt Peak Diode Recovery dv/dt P

D

T

, T

J

STG

Drain-Source Voltage 60 -300 V Drain Current

- Continuous (T

Drain Curent - Pulsed

= 25°C)

A

= 70°C)

A

(Note 1)

1.3 -0.3 A

0.82 -0.19 A

5.2 -1.2 A

Gate-Source Voltage ± 20 V

Power Dissipation (TA = 25°C)

= 70°C)

(T

A

(Note 2)

7.0 4.5 V/ns

2.0 W

1.3 W

Operating and Storage Temperature Range -55 to +150 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJA

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. A, August 2000

FQS4900

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse

V

GS

V

= 0 V, ID = -250 µA

GS

= 60 V, VGS = 0 V

V

DS

V

= 48 V, TC = 55°C

DS

= -300 V, VGS = 0 V

V

DS

V

= -240 V, TC = 55°C

DS

= 20 V, VDS = 0 V

V

GS

V

= -20 V, VDS = 0 V

GS

N-Ch 60 -- -- V P-Ch -300 -- -- V

N-Ch

P-Ch

-- -- 1 µA

-- -- 10 µA

-- -- -1 µA

-- -- -10 µA All -- -- 100 nA All -- -- -100 nA

= 0 V, ID = 250 µA

On Characteristics

V

R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

= 4V, ID = 20 mA

DS

= 4V, ID = -20 mA

V

DS

= 10 V, ID = 0.65 A

V

GS

V

= 5 V, ID = 0.65 A

GS

V

= -10 V, ID = -0.15 A

GS

= -5 V, ID = -0.15 A

V

GS

V

= 10 V, ID = 0.65 A

DS

= -10 V, ID = -0.15 A

V

DS

N-Ch 1.0 -- 1.95 V P-Ch -1.0 -- -1.95 V

N-Ch

P-CH

-- 0.39 0.55 Ω

-- 0.46 0.65 Ω

-- 11.2 15.5 Ω

-- 11.4 16 Ω

N-CH -- 1.7 -- S P-CH -- 0.6 -- S

V

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

g

gs

Total Gate Charge

Gate-Source Charge

N-Channel V

= 30 V, ID = 1.3 A,

DD

= 25 Ω

R

G

P-Channel

= -150 V, ID = -0.3 A,

V

DD

R

= 25 Ω

G

N-Channel

= 48 V, ID = 1.3 A,

V

DS

V

= 5 V

GS

P-Channel V

= -240 V, ID = -0.3 A,

gd

Gate-Drain Charge

V

DS GS

= -5 V

N-Ch -- 5.7 21 ns P-Ch -- 10 30 ns N-Ch -- 21 50 ns P-Ch -- 25 60 ns N-Ch -- 11 32 ns P-Ch -- 35 80 ns N-Ch -- 17 45 ns P-Ch -- 47 105 ns N-Ch -- 1.6 2.1 nC P-Ch -- 3.6 4.7 nC N-Ch -- 0.28 -- nC P-Ch -- 0.42 -- nC N-Ch -- 0.82 -- nC P-Ch -- 2.1 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

3. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

4. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current

= 0 V, IS = 1.3 A

Drain-Source Diode Forward Voltage

V

GS

V

= 0 V, IS = -0.3 A

GS

N-Ch -- -- 1.3 A P-Ch -- -- -0.3 A N-Ch -- -- 1.5 V

P-Ch -- -- -4.0 V

Rev. A, August 2000

Typical Characteristics : N-Channel

FQS4900

, Drain Current [A]

D

I

10

0

10

-1

10

V Top : 10.0 V

8.0 V

6.0 V

5.0 V

4.5 V

4.0 V

3.5 V Bottom : 3.0 V

GS

VDS, Drain-Source Voltage [V]

!

Notes :

1. 250#s Pulse Test = 25

2. T

C

0

10

0

10

"

1

10

150

"

25

, Dra i n Current [A]

D

I

-1

10

0246810

-55

VGS, Gate-Source Voltage [V]

"

!

Notes :

1. V

= 25V

DS

2. 250#s Pulse Tes t

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

2.0

1.5

],

$

[

1.0

DS(ON)

R

0.5

VGS = 5V

VGS = 10V

Drain-Source On-Resistance

!

"

Note : T

= 25

0.0 02468

J

ID, Drain Current [A]

0

10

"

150

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

VSD, Sou r c e-Dra i n volta g e [V]

"

25

!

Notes :

= 0V

1. V

GS

2. 250#s Pulse Test

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

160

120

80

Capacitance [pF]

40

0

-1

10

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge C haracteristics

C C C

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd

!

Notes :

= 0 V

1. V

GS

2. f = 1 MH z

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VDS = 30V

VDS = 48V

QG, Tota l Gate Cha rg e [nC]

!

Note : I

= 1.3 A

D

Rev. A, August 2000

Typical Characteristics : N-Channel (Continued)

FQS4900

1.2

1.1

1.0

, (Norma liz e d )

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

!

1. V

2. I

Notes :

D

TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage Variation

vs. Temperature

Operation in This Area

1

10

0

10

, Drain C u rren t [A ]

-1

D

I

10

-2

10

-1

10

is Limited by R

DS(on)

1 s

10 s

DC

!

Notes :

1. T

= 25 oC

C

= 150 oC

2. T

J

3. Single Pulse

0

10

1

10

VDS, Drain-Source Voltage [V]

100 ms

GS

= 250

= 0 V

10 ms

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

0.5

#

A

Drain-Source On-Resistance

0.0

-100 -50 0 50 100 150 200

!

Notes :

1. V

= 10 V

GS

2. I

= 0.65 A

D

TJ, Junction Temperature [oC]

Figure 8. On-Resistance Va riation

vs. Temperature

1 ms

1.5

1.2

0.9

0.6

, Drain Current [A]

D

I

0.3

2

10

0.0 25 50 75 100 125 150

TC, Case Temperature ["]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

D=0.5

0.2

1

10

0.1

0.05

0.02

0

10

0.01

(t), Thermal Response

JC

%

Z

-1

10

-4

10

single pulse

-3

10

-2

10

-1

10

!

No te s :

1. Z

(t) = 62.5 "/W M a x .

%

JC

2. D u ty F a c to r , D = t1/t

3. TJM - TC = PDM * Z

P

DM

0

10

2

(t)

%

JC

t

1

t

2

1

10

2

t1, Square Wave Pulse Duration [sec]

Figure 11. Trans ient Ther m al Res pons e Cur ve

Rev. A, August 2000

Typical Characteristics : P-Channel (Continued)

FQS4900

10

, Drain Current [A]

D

-I

10

0

V Top : -10.0 V

-8.0 V

-6.0 V

-5.0 V

-4.5 V

-4.0 V

-3.5 V Bottom : -3.0 V

-1

-2

-1

10

GS

-VDS, Drain-Source Voltage [V]

0

10

"

150

"

25

, Drain Current [A]

!

Notes :

1. 250#s Pulse Test

"

2. T

= 25

C

0

10

1

10

D

-I

-1

10

0246810

"

-55

-VGS , Gate-Source Voltage [V]

!

Notes :

1. V

= -25V

DS

2. 250#s Pulse Test

Figure 2. Transfer CharacteristicsFi gur e 1. O n- Regi on Characteristics

VGS = - 5V

!

Note : T

30

25

[Ω],

20

DS(on)

R

15

Drain-Source On-Resistance

10

0.0 0.3 0.6 0.9 1.2 1.5

VGS = - 10V

-ID , Drai n Current [A]

0

10

"

, Reverse Drain Current [A]

"

= 25

J

DR

-I

-1

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0

150

-VSD , Sou r c e-Drain Voltage [V]

"

25

!

Notes :

= 0V

1. V

GS

2. 250#s Pulse Tes t

Figure 3. On-Resistance V ariation vs.

Drain Current and Gate Voltage

250

200

150

100

Capacitance [pF]

50

0

-1

10

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge C haracteristics

C C C

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd

!

Notes :

= 0 V

1. V

GS

2. f = 1 MHz

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

12

10

8

6

4

, Gate-S o u rce V o ltag e [V ]

GS

2

-V

0

0123456

VDS = -60V

V

= -150V

DS

VDS = -240V

QG, Tota l Gate Cha r g e [nC]

!

Note : I

= -0.3 A

D

Rev. A, August 2000

Typical Characteristics : P-Channel (Continued)

FQS4900

1.2

1.1

1.0

, (Norma liz e d )

DSS

!

-BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

1. V

2. I

Notes :

D

TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage Variation

vs. Temperature

1

10

0

10

-1

10

, Drain Current [A]

D

-2

-I

10

-3

10

0

10

-VDS, Drain-Source Voltage [V]

Operation in This Area is Limited by R

DS(on)

DC

!

Notes :

1. T

= 25 oC

C

2. T

= 150 oC

J

3. Single Pulse

1

10

10 s

10 ms

100 ms

1 s

2

10

= 0 V

GS

= -250 #A

1 ms

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

0.5

Drain-Source On-Resistance

0.0

-100 -50 0 50 100 150 200

!

Note s :

1. V

= -10 V

GS

2. I

= -0.15 A

D

TJ, Junction Temperature [oC]

Figure 8. On-Resistance Va riation

vs. Temperature

0.35

0.30

0.25

0.20

0.15

, Dra in Curre n t [A]

D

0.10

-I

0.05

0.00 25 50 75 100 125 150

TC, Case Temp erature ["]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

D=0.5

0.2

1

10

0.1

0.05

0.02

0

10

0.01

(t), T hermal Response

JC

%

Z

-1

10

-4

10

single pulse

-3

10

-2

10

-1

10

!

No te s :

1. Z

(t) = 62.5 "/W M a x .

%

JC

2. D u ty F a c to r , D = t1/t

3. TJM - TC = PDM * Z

P

DM

0

10

2

(t)

%

JC

t

1

t

2

1

10

2

t1, Square W ave Pulse Duration [sec]

Figure 11. Trans ient Ther m al Res pons e Cur ve

Rev. A, August 2000

Gate Charge Test Circuit & Waveform

FQS4900

V

GS

DS

5V

V

GS

DS

GS

10%

Q

gs

90%

t

d(on)tr

Q

g

Q

gd

Charge

t

d(off)

t

f

t

on

f

t

off

12V

5V

200nF

3mA

Same Type

50K

&

300nF

V

GS

Same Type

as DUT

DUT

V

Resistive Switching Test Circuit & Waveforms

R

L

DUT

L

V

DD

V

DS

V

GS

R

G

Rev. A, August 2000

Package Dimensions

8-SOP

1.55 ±0.20

0.061 ±0.008

MIN

0.004~0.001

0.1~0.25

0.56

0.022

()

FQS4900

0.006

0.15

+

-0.002

0.004

+

-0.05

0.10

0.50 ±0.20

0.020 ±0.008

#1

#4

6.00 ±0.30

0.236 ±0.012

3.95 ±0.20

0.156 ±0.008

5.72

0.225

#8

#5

5.13

1.80

0.071

0~8°

MAX

0.202

4.92 ±0.20

MAX

0.194 ±0.008

MAX0.10

MAX0.004

1.27

0.050

0.41 ±0.10

0.016 ±0.004

Rev. A, August 2000

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™

2

E

CMOS™ FACT™ FACT Quiet Series™

®

FAST FASTr™ GTO™

HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench

®

QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6

SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. A, January 2000