Datasheet fqpf5n50cf Datasheet

FRFET

FQPF5N50CF 500V N-Channel MOSFET

TM

FQPF5N50CF

500V N-Channel MOSFET

Features

• 5A, 500V, R

• Low gate charge ( typical 18nC)

• Low Crss ( typical 15pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings

= 1.55 Ω @VGS = 10 V

DS(on)

GSD

TO-220F

FQPF Series

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

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G

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!!!!

S

Symbol Parameter FQPF5N50CF Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

T

, T

J

STG

T

L

Drain-Source Voltage

500

Drain Current - Continuous (TC = 25°C) 5 A

- Continuous (T

Drain Current - Pulsed

= 100°C) 2.9 A

C

(Note 1)

20 A Gate-Source Voltage ± 30 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

(Note 2) (Note 1) (Note 1) (Note 3)

300 mJ

5A

7.3 mJ

4.5 V/ns

Power Dissipation (TC = 25°C) 38 W

- Derate above 25°C 0.3 W/°C Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes,

300 °C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol Parameter FQPF5N50CF Units

R

θJC

R

θJS

R

θJA

Thermal Resistance, Junction-to-Case 3.31 °C/W Thermal Resistance, Case-to-Sink Typ. -- °C/W Thermal Resistance, Junction-to-Ambient 62.5 °C/W

V

FQPF5N50CF Rev. B

1

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FQPF5N50CF FQPF5N50CF TO-220F - -

FQPF5N50CF 500V N-Channel MOSFET

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

∆BV ∆T

J

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V

/

Breakdown Voltage Temperature Coef-

DSS

ficient

ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C

Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 µA

V

= 400 V, TC = 125°C -- -- 10 µA

DS

Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V Static Drain-Source

VGS = 10 V, ID = 2.5A -- 1.3 1.55 Ω

On-Resistance Forward Transconductance VDS = 40 V , ID = 2.5A

Input Capacitance VDS = 25 V, VGS = 0 V, Output Capacitance -- 80 105 pF Reverse Transfer Capacitance -- 15 20 pF

f = 1.0 MHz

(Note 4)

-- 5.2 -- S

-- 480 625 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

g gs gd

Turn-On Delay Time VDD = 250 V, ID = 5A,

= 25 Ω

R

Turn-On Rise Time -- 46 100 ns

G

Turn-Off Delay Time -- 50 110 ns Turn-Off Fall Time -- 48 105 ns Total Gate Charge VDS = 400 V, ID = 5A,

= 10 V

V

Gate-Source Charge -- 2.2 -- nC

GS

Gate-Drain Charge -- 9.7 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 21.5 mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C ≤ 5A, di/dt ≤ 200A/µs, VDD ≤ BV

3. I

SD

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 5 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 20 A Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5 A -- -- 1.4 V Reverse Recovery Time VGS = 0 V, IS = 5 A,

/ dt = 100 A/µs

dI

Reverse Recovery Charge -- 0.11 -- µC

Starting TJ = 25°C

DSS,

F

-- 12 35 ns

(Note 4, 5)

-- 18 24 nC

(Note 4, 5)

-- 65 -- ns

(Note 4)

FQPF5N50CF Rev. B

2

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Typ ical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FQPF5N50CF 500V N-Channel MOSFET

10

, Drain Current [A]

D

I

10

V Top : 15.0 V

10.0 V

1

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V Bottom : 5.0 V

0

-1

10

GS

0

10

VDS, Drain-Source Voltage [V]

1

10

150°C

25°C

0

10

-1

10

246810

Notes :

1. 250

2. T

1

10

= 25°C

C

µ

s Pulse Test

, Drain Current [A]

D

I

VGS, Gate-Source Voltage [V ]

-55°C

Notes :

= 40V

1. V

DS

2. 250

µ

s Pulse Test

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

4.5

4.0

3.5

3.0

],

Ω

[

2.5

DS(ON)

R

2.0

1.5

Drain-Source On-Resistance

1.0

0.5 051015

VGS = 10V

VGS = 20V

Note : TJ = 25°C

ID, Drain Current [A]

1

10

0

10

150?

, Reverse Drain Current [A]

DR

I

-1

10

0.20.40.60.81.01.21.4

VSD, Source-Drain voltage [V]

25?

Notes :

1. V

= 0V

GS

2. 250

µ

s Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

1200

1000

800

600

400

Capacitanc e [pF]

200

0

-1

10

FQPF5N50CF Rev. B

C

iss

C

oss

C

rss

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

= Cds + C

gd

= C

gd

Notes ;

= 0 V

1. V

GS

2. f = 1 MHz

1

10

12

10

8

VDS = 100V

VDS = 250V

VDS = 400V

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20

Note : ID = 5A

QG, Total Gate Charg e [nC]

3

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FQPF5N50CF 500V N-Channel MOSFET

Typ ical Performance Characteristics

(Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2

1.1

1.0

, (Normalized)

BV

DSS

0.9

Notes :

1. V

2. I

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 20 0

TJ, Junction Temperature [°C]

= 0 V

GS

= 250µA

D

3.0

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

0.5

Drain-Source On-Resistance

0.0

-100 -50 0 50 100 150 200

TJ, Junction Temperature [°C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs

Case Temperature

2

10

1

10

0

10

, Drain Current [A]

D

I

-1

10

-2

10

0

10

Operation in This Area is Limited by R

DC

1

10

DS(on)

10 ms

100 ms

Notes :

= 25°C

1. T

C

2. T

= 150°C

J

3. Single P u lse

10 µs

100 µs

1 ms

2

10

3

10

VDS, Drain-Source Voltage [V]

6

5

4

3

2

, Drain Current [A]

D

I

1

0

25 50 75 100 125 150

TC, Case Temperature [°C]

Notes :

1. V

2. I

GS

= 2.5 A

D

= 10 V

FQPF5N50CF Rev. B

Figure 10. Transient Thermal Response Curve

D=0.5

0

10

0.2

0.1

0.05

-1

10

0.02

(t), Thermal Response Z

0.01

JC

θ

-2

10

-5

10

single pulse

-4

10

-3

10

-2

10

N o te s :

(t) = 3.31 °C/W M ax.

1. Z

θ

JC

2. D u ty F a c to r , D = t

3. TJM - TC = PDM * Z

P

DM

t

1

t

2

-1

10

1/t2

(t)

θ

JC

0

10

t1, Square W ave Pulse Duration [sec]

4

1

10

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12V

200nF

3mA

50KΩ

V

Gate Charge Test Circuit & Waveform

V

GS

300nF

Same Type

as DUT

DUT

V

DS

GS

10V

Resistive Switching Test Circuit & Waveforms

FQPF5N50CF 500V N-Channel MOSFET

Q

g

Q

gs

Q

gd

Charge

10V

R

L

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off)

t

f

t

off

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

L

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

E

AS

2

AS

(t)

I

D

t

p

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

FQPF5N50CF Rev. B

5

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontroll ed by pulse pe riod

G

FQPF5N50CF 500V N-Channel MOSFET

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

FQPF5N50CF Rev. B

6

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Mechanical Dimensions

10.16 ±0.20

TO-220F

ø3.18 ±0.10

2.54

FQPF5N50CF 500V N-Channel MOSFET

±0.20

3.30 ±0.10

15.80 ±0.20

9.75 ±0.30

MAX1.47

0.80 ±0.10

(7.00)

(30°)

6.68 ±0.20

(1.00x45°)

(0.70)

15.87 ±0.20

FQPF5N50CF Rev. B

0.35 ±0.10

2.54TYP

[2.54

±0.20]

#1

9.40 ±0.20

2.54TYP

[2.54

±0.20]

4.70 ±0.20

+0.10

0.50

–0.05

7

2.76 ±0.20

Dimensions in Millimeters

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TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

A

CEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUM E ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FQPF5N50CF 500V N-Channel MOSFET

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Forma tive or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

8

FQPF5N50CF Rev. B

Rev. I15

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