Datasheet FQP3N80C, FQPF3N80C Datasheet (Fairchild)

FQP3N80C/FQPF3N80C

800V N-Channel MOSFET

FQP3N80C/FQPF3N80C

TM

QFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well

Features

• 3.0A, 800V, R

• Low gate charge ( typical 13 nC)

• Low Crss ( typical 5.5 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 4.8Ω @VGS = 10 V

DS(on)

suited for high efficiency switch mode power supplies.

D

!!!!

####

""""

!!!!

!!!! !!!!

!!!!

S

G

SD

TO-220

FQP Series

Absolute Maximum Ratings T

D

G

S

= 25°C unless otherwise noted

C

TO-220F

FQPF Series

!!!!

G

Symbol Parameter FQP3N80C FQPF3N80C Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

Drain-Source Voltage 800 V Drain Current

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

33 *A

1.9 1.9 * A 12 12 * A

Gate-Source Voltage ± 30 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2) (Note 1) (Note 1) (Note 3)

320 mJ

3A

10.7 mJ

4.5 V/ns

107 39 W

- Derate above 25°C 0.85 0.31 W/°C

T

, T

J

STG

T

L

* Drain current limited by maximum junction temperature.

Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter FQP3N80C FQPF3N80C Units

R

θJC

R

θCS

R

θJA

Thermal Resistance, Junction-to-Case 1.17 3.2 °C/W Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

FQP3N80C/FQPF3N80C

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 800 V, VGS = 0 V

DS

V

= 640 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

800 -- -- V

-- 1 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage Static Drain-Source

On-Resistance Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 1.5 A

V

GS

= 50 V, ID = 1.5 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 4.0 4.8 Ω

-- 3 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance Output Capacitance -- 54 70 pF Reverse Transfer Capacitance -- 5.5 7. 5 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 543 705 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

g gs gd

Turn-On Delay Time Turn-On Rise Time -- 43.5 95 ns Turn-Off Delay Time -- 22.5 55 ns Turn-Off Fall Time -- 32 75 ns Total Gate Charge Gate-Source Charge -- 3.4 -- nC Gate-Drain Charge -- 5.8 -- nC

= 400 V, ID = 3 A,

V

DD

= 25 Ω

R

G

(Note 4, 5)

V

= 640 V, ID = 3 A,

DS

V

GS

(Note 4, 5)

= 10 V

-- 15 40 ns

-- 13 16.5 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 67mH, IAS = 3.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 3.0 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 12 A

= 0 V, IS = 3.0 A

Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- 4.0 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 3.0 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 642 -- ns

(Note 4)

Rev. A, April 2003

Typical Characteristics

FQP3N80C/FQPF3N80C

10

, Dra in C u rre n t [A ]

D

I

10

1

V Top : 1 5 .0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V Botto m : 5.5 V

0

-1

-2

-1

10

GS

$

Note s :

1. 250&s Pulse Test

%

2. T

= 25

C

0

10

1

10

VDS, Drain-Source Voltage [V]

VGS = 20V

VGS = 10V

$

Note : T

%

= 25

J

10

8

],

'

[

6

DS(ON)

R

4

Drain-Source On-Resistance

2

02468

ID, Drain Current [A]

1

10

150oC

0

10

25oC

, Drain Current [A]

D

I

-1

10

46810

-55oC

$

Note s :

1. V

= 50V

DS

2. 25 0&s Pulse Te st

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

%

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

150

VSD, So ur ce -Drain v olta g e [V ]

%

25

$

Note s :

= 0V

1. V

GS

2. 250&s Pulse Test

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

800

600

400

Capacitance [pF]

200

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

C

iss

C

oss

C

rss

0

10

gd

1

10

$

Notes :

1. V

= 0 V

GS

2. f = 1 M Hz

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

V

0

03691215

VDS, Drain-Source Voltage [V]

VDS = 160V

VDS = 400V

VDS = 640V

QG, Tota l G a te C h arg e [n C ]

$

Note : I

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

= 3A

D

Typical Characteristics

(Continued)

FQP3N80C/FQPF3N80C

1.2

1.1

1.0

, (N ormalize d )

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

$

1. V

2. I

Note s :

D

= 0 V

GS

= 250 &A

TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage Variation

vs Temperature

Operation in This Area is Limited by R

1

10

0

10

, Dra in Curren t [A ]

-1

D

I

10

-2

10

0

10

DS(on)

100 ms

DC

$

Note s :

1. T

= 25 oC

C

2. T

= 150 oC

J

3. Single Pulse

1

10

2

10

VDS, Drain-Source Voltage [V]

10 ms

100 µs

1 ms

3.0

2.5

2.0

1.5

, (Normalize d )

1.0

DS(ON)

R

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

$

Note s :

= 10 V

1. V

GS

= 1.5 A

2. I

D

TJ, Junction Temperature [oC]

Figure 8. On-Resistance Va riation

vs Temperature

Operation in This Area is Limited by R

$

Note s :

1. T

2. T

3. Single Pulse

1

10

= 25 oC

C

= 150 oC

J

DS(on)

100 µs

1 ms

10 ms

100 ms

DC

2

10

3

10

1

10

0

10

, Drain Current [A]

-1

D

I

10

-2

10

3

10

0

10

VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe O per at in g Are a

4

3

2

, Drain Current [A]

D

I

1

0

25 50 75 100 125 150

Figure 10. Maximum Drain Current

vs Case Temperature

for FQP3N80C

TC, Case Temperature [%]

Figure 9-2. Maximum Safe Operating Area

for FQPF3N80C

Rev. A, April 2003

Typical Characteristics

0

10

D=0.5

(Continued)

FQP3N80C/FQPF3N80C

0.2

0.1

-1

10

0.05

0.02

(t), Th e rm al Re s p o n se

JC

0.01

(

Z

-2

10

-5

10

single pulse

-4

10

-3

10

-2

10

$

No tes :

1. Z

(t) = 1.17 %/W M a x.

(

JC

2. D u ty Fa ct o r, D = t

3. TJM - TC = PDM * Z

P

DM

t

1

t

2

-1

10

1/t2

(t)

(

JC

0

t1, Square W ave Pulse Duration [sec]

Figure 11-1. Transient Thermal Response Curve for FQP3N80C

D=0.5

0

10

0.2

0.1

0.05

-1

10

0.02

(t), The rm al Res p o n s e

JC

0.01

(

Z

sin g le p u ls e

-2

10

-5

10

-4

10

-3

10

t

, Square Wave Pulse Duration [sec]

1

-2

10

$

Notes :

1. Z

(t) = 3.2 %/W M ax .

(

JC

2. D u ty F ac t o r, D = t

3. TJM - TC = PDM * Z

P

DM

t

1

-1

10

1/t2

(

JC

t

2

0

10

1

10

(t)

1

10

Figure 11-2. Transient Thermal Res ponse Curve for FQPF3N80 C

Rev. A, April 2003

12V

200nF

3mA

50K)

V

Gate Charge Test Circuit & Waveform

V

GS

300nF

Same Type

as DUT

DUT

V

DS

GS

10V

Resistive Switching Test Circuit & Waveforms

FQP3N80C/FQPF3N80C

Q

g

Q

gs

Q

gd

Charge

10V

R

L

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off)

t

f

t

off

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

L

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

AS

2

AS

ID (t)

t

2

t

p

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

Rev. A, April 2003

Peak Diode Recovery dv /d t Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontroll ed by pulse period

G

FQP3N80C/FQPF3N80C

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

Rev. A, April 2003

Package Dimensions

FQP3N80C/FQPF3N80C

TO-220

(1.70)

9.20 ±0.2013.08 ±0.20

1.30 ±0.10

(1.46)

(1.00)

1.27 ±0.10

9.90 ±0.20 (8.70)

ø3.60 ±0.10

(3.70)(3.00)

(45°)

1.52 ±0.10

2.80 ±0.1015.90 ±0.20

18.95MAX.

4.50 ±0.20

+0.10

1.30

–0.05

2.54TYP

±0.20]

[2.54

10.00 ±0.20

0.80 ±0.10

2.54TYP

±0.20]

[2.54

10.08 ±0.30

0.50

+0.10 –0.05

2.40 ±0.20

Dimensions in Millimeters

Rev. A, April 2003

Package Dimensions

10.16 ±0.20

(Continued)

TO-220F

ø3.18 ±0.10

2.54

FQP3N80C/FQPF3N80C

±0.20

3.30 ±0.10

15.80 ±0.20

9.75 ±0.30

MAX1.47

0.80 ±0.10

(7.00)

(30°)

6.68 ±0.20

(1.00x45°)

(0.70)

0.20

15.87 ±

0.35 ±0.10

2.54TYP

[2.54

±0.20]

#1

9.40 ±0.20

2.54TYP

[2.54

±0.20]

4.70 ±0.20

0.50

+0.10 –0.05

2.76 ±0.20

Dimensions in Millimeters

Rev. A, April 2003

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2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I2