Datasheet FQL40N50 Datasheet (Fairchild Semiconductor)

FQL40N50

500V N-Channel MOSFET

FQL40N50

May 2001

TM

QFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well

Features

• 40A, 500V, R

• Low gate charge ( typical 155 nC)

• Low Crss ( typical 95 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 0.11Ω @VGS = 10 V

DS(on)

suited for high efficiency switch mode power supply, power factor correction, motor drive and welding machine.

D

!

"

!

"

" "

"

!

S

G

SD

Absolute Maximum Ratings T

TO-264

FQL Series

= 25°C unless otherwise noted

C

!

G

Symbol Parameter FQL40N50 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

Drain-Source Voltage 500 V Drain Current

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

40 A 25 A

160 A Gate-Source Voltage ± 30 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2) (Note 1) (Note 1) (Note 3)

1780 mJ

40 A 46 mJ

4.5 V/ns

460 W

- Derate above 25°C 3.7 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θCS

R

θJA

Thermal Resistance, Junction-to-Case -- 0.27 °C/W Thermal Resistance, Case-to-Sink 0.1 -- °C/W Thermal Resistance, Junction-to-Ambient -- 30 °C/W

FQL40N50

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV ∆BV / ∆T I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 500 V, VGS = 0 V

DS

V

= 400 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

500 -- -- V

-- 0.48 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage Static Drain-Source

On-Resistance Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 20 A

V

GS

= 50 V, ID = 20 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 0.085 0.11 Ω

-- 29 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance Output Capacitance -- 880 1150 pF Reverse Transfer Capacitance -- 95 120 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 5800 7500 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

g gs gd

Turn-On Delay Time Turn-On Rise Time -- 440 890 ns Turn-Off Delay Time -- 350 700 n s Turn-Off Fall Time -- 250 50 0 n s Total Gate Charge Gate-Source Charge -- 37 -- nC Gate-Drain Charge -- 78 -- nC

= 250 V, ID = 40 A,

V

DD

= 25 Ω

R

G

V

= 400 V, ID = 40 A,

DS

V

GS

= 10 V

(Note 4, 5)

-- 140 290 ns

-- 155 200 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 2.0mH, IAS = 40A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 40A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 40 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 160 A

= 0 V, IS = 40 A

Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- 8.0 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 40 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 520 -- ns

(Note 4)

Typical Characteristics

FQL40N50

V Top : 15 V 10 V

8.0 V

7.0 V

6.5 V

6.0 V Botto m : 5.5 V

-1

GS

※

Notes :

1. 250μs Pulse Test

2. T

0

10

2

10

1

10

, Drain Current [A]

D

I

0

10

VDS , Drain-Source Voltage [V]

0.4

0.3

],

Ω

[

0.2

DS(on)

R

0.1

Drain-Source On-Resistance

0 30 60 90 120 150 180

VGS = 10V

VGS = 20V

※

ID , Drain Curren t [A]

= 25

C

1

Note : T

2

10

℃

1

10

0

, Dra in Current [A ]

10

D

I

℃

-1

10

246810

150

℃

25

℃

-55

※

Note s :

= 50V

1. V

DS

2. 250μs Pulse Test

VGS , Gate -S o u rc e Vo lta g e [V ]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

2

10

1

10

0

10

, Reverse Drain Current [A]

DR

I

℃

= 25

J

10

℃

150

℃

25

-1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

※

Note s :

= 0 V

1. V

GS

2. 250μs Pulse Test

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

12000

10000

Capacitance [pF]

8000

6000

4000

2000

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

C

iss

C

oss

※

10

1

Note s :

1. V

= 0 V

GS

2. f = 1 MHz

C

rss

0

-1

10

0

10

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 30 60 90 120 150 180

QG, Tota l Gate Charge [n C]

VDS = 100V

VDS = 250V

VDS = 400V

※

Note : I

= 40 A

D

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

Typical Characteristics (Continued)

FQL40N50

1.2

1.1

1.0

, (N o r malize d )

DSS

BV

0.9

Drain-Source Breakdown V oltage

0.8

-100 -50 0 50 100 150 200

※

1. V

2. I

No tes :

GS

= 250 μA

D

TJ, Junction Tem perature [oC]

Figure 7. Breakdown Voltage Variation

vs. Temperature

※

Notes :

1. T

= 25 oC

C

= 150 oC

2. T

J

3. Single Pulse

1

10

DS(on)

100 µs

1 ms

10 ms

DC

2

10

3

10

2

10

1

10

, Drain Current [A]

D

0

I

10

-1

10

0

10

Operation in T his Area is Limited by R

VDS, Drain-Source Voltage [V]

= 0 V

10 µs

3.0

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

※

Notes :

= 10 V

1. V

GS

= 20 A

2. I

D

TJ, Junction Temperature [oC]

Figure 8. On-Resistance Variation

vs. Temperature

40

30

3

10

20

, Drain Current [A]

D

I

10

0

25 50 75 100 125 150

TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

D=0.5

-1

10

0.2

0.1

※

No te s :

(t) = 0.27 ℃/W M a x .

1. Z

θ

JC

2. D u ty F a c to r, D = t

3. TJM - TC = PDM * Z

1/t2

(t)

θ

JC

0.05

P

10

(t), Therm al Response

JC

θ

Z

-2

0.02

0.01

-5

10

single pulse

-4

10

-3

10

-2

10

DM

t

1

t

2

-1

10

0

10

1

10

t1, Square W ave Pulse Duration [sec]

Figure 11. Transient Thermal Response Cur ve

12V

200nF

3mA

50KΩ

V

Gate Charge Test Circuit & Waveform

V

GS

300nF

Same Type

as DUT

DUT

V

DS

GS

10V

Resistive Switching Test Circuit & Waveforms

FQL40N50

Q

g

Q

gs

Q

gd

Charge

10V

R

L

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off)

t

f

t

off

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

L

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

AS

2

AS

ID (t)

t

2

p

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

Peak Diode Recovery dv /d t Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontroll ed by pulse peri od

G

FQL40N50

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recoverydv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

Package Dimensions

(8.30) (8.30)

(9.00)

20.00

±0.20

TO-264

(1.00)

(4.00)

±0.20

6.00

FQL40N50

(2.00)

(R2.00)

ø3.30

(9.00)

(11.00)

±0.20

(R1.00)

±0.20

1.50

4.90

(7.00)

±0.20

(7.00)

(1.50) (1.50)

±0.20

2.50

3.00

1.00

5.45TYP

±0.30

[5.45

]

5.45TYP

[5.45

±0.20

+0.25 –0.10

±0.30

(0.50)

(2.00)

]

±0.10

2.50

±0.20

20.00

±0.50

20.00

0.60

+0.25 –0.10

(1.50)

2.80

±0.30

±0.20

(0.15)

5.00

3.50

(1.50)

(2.80)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™

2

E

CMOS™ EnSigna™ FACT™ FACT Quiet Series™

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FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™

OPTOPLANAR™ PACMAN

™

POP™ PowerTrench

®

QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER SMART START™ Stealth™

SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET VCX™

®

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Producti on This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.