Datasheet FQI6N80 Datasheet (Fairchild)

FQB6N80 / FQI6N80

800V N-Channel MOSFET

October 2008

QFET

®

General Description

FQB6N80 / FQI6N80

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features

• 5.8A, 800V, R

• Low gate charge ( typical 31 nC)

• Low Crss ( typical 14 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

RoHS Compliant

•

= 1.95Ω @VGS = 10 V

DS(on)

D

!

G

S

D2-PAK

FQB Series

G

Absolute Maximum Ratings

D

S

TC = 25°C unless otherwise noted

I2-PAK

FQI Series

G

Symbol Parameter FQB6N80 / FQI6N80 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

Drain-Source Voltage 800 V Drain Current

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

5.8 A

3.67 A

23.2 A Gate-Source Voltage ± 30 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) * Power Dissipation (T

= 25°C)

C

(Note 2) (Note 1) (Note 1) (Note 3)

680 mJ

5.8 A

15.8 mJ

4.0 V/ns

3.13 W

158 W

- Derate above 25°C 1.27 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

300 °C

D

!

"

5

3

"

" "

"

!

S

Thermal Charac teristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

Thermal Resistance, Junction-to-Case -- 0.79 °C/W Thermal Resistance, Junction-to-Ambient * -- 40 °C/W Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

FQB6N80 / FQI6N80

Electrical Characteristics

T

= 25°C unless otherwise noted

C

Symbol Parameter T e s t Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, ID = 250 µA

GS

= 250 µA, Referenced to 25°C

I

D

V

= 800 V, VGS = 0 V

DS

= 640 V, TC = 125°C

V

DS

V

= 30 V, VDS = 0 V

GS

V

= -30 V, VDS = 0 V

GS

800 -- -- V

-- 0.9 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage Static Drain-Source

On-Resistance Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V , ID = 2.9 A

V

GS

V

= 50 V, ID = 2.9 A

DS

(Note 4)

3.0 -- 5.0 V

-- 1.5 1.95 Ω

-- 5.9 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance Output Capacitance -- 125 160 pF Reverse Transfer Capacitance -- 14 18 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1150 1500 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

g gs gd

Turn-On Delay Time Turn-On Rise Time -- 70 150 ns Turn-Off Delay Time -- 65 14 0 n s Turn-Off Fall Time -- 45 1 0 0 n s Total Gate Charge Gate-Source Charge -- 7.1 -- nC Gate-Drain Charge -- 15 -- nC

V

= 400 V, ID = 5.8 A,

DD

R

= 25 Ω

G

V

= 640 V, ID = 5.8 A,

DS

V

GS

= 10 V

(Note 4, 5)

-- 30 7 0 ns

-- 31 nC

Drain-So urce Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 38mH, IAS = 5.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 5.8A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 5.8 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 23.2 A

V

Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- 5.7 -- µC

Starting TJ = 25°C

DSS,

= 0 V, IS = 5.8 A

GS

= 0 V, IS = 5.8 A,

V

GS

dI

/ dt = 100 A/µs

F

-- -- 1.4 V

-- 650 -- ns

(Note 4)

Rev. A1, Oct 2008

Typical Characteristics

V

GS

Top : 15 .0 V

1

10.0 V

10

8.0 V

7.0 V

6.5 V

6.0 V Botto m : 5.5 V

0

10

FQB6N80 / FQI6N80

, Drain Current [A]

D

I

-1

10

-1

10

0

10

VDS, Drain-Source Voltage [V]

※

Notes :

1. 250μs Pulse Tes t

℃

2. T

= 25

C

1

10

1

10

150oC

0

10

, Dra i n Current [A]

D

I

-1

10

246810

25oC

VGS, Gate-Source Voltage [V]

-55oC

※

Notes :

1. V

= 50V

DS

2. 250μs Pulse Tes t

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics

4

3

],

Ω

[

2

DS(ON)

R

1

VGS = 10V

VGS = 20V

Drain-Source On-Resistance

※

0

0 4 8 12 16

ID, Drain Current [A]

Note : T

1

10

℃

= 25

J

0

10

℃

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2

150

VSD, Sou r c e-Drain voltage [V]

℃

25

※

Notes :

= 0V

1. V

GS

2. 250μs Pulse Test

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

2000 1800 1600 1400 1200

1000

800 600

Capacitance [pF]

400 200

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

10

gd

1

※

Note s :

1. V

= 0 V

GS

2. f = 1 MHz

C

iss

C

oss

C

rss

0

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20 25 30 35

VDS, Drain-Source Voltage [V]

VDS = 160V

VDS = 400V

VDS = 640V

QG, Tota l Gate Charge [n C]

※

Note : I

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

= 5.8A

D

Typical Characteristics (Continued)

FQB6N80 / FQI6N80

1.2

1.1

1.0

, (Norm a liz e d )

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

※

1. V

2. I

Notes :

TJ, Junction Temperature [oC]

Figure 7. Breakdo w n Voltage Variation

vs Temperature

2

10

1

10

0

10

, Drain Current [A]

D

I

-1

10

-2

10

0

10

Opera t io n in T h is Area is Limited by R

DS(on)

1 ms

10 ms

DC

※

Notes :

1. T

= 25 oC

C

2. T

= 150 oC

J

3. Single Pulse

1

10

2

10

VDS, Drain-Source Voltage [V]

100μs

= 0 V

GS

= 250 μA

D

10μs

3.0

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

0.5

Drain-Source On-Resistance

0.0

-100 -50 0 50 100 150 200

※

Notes :

1. V

= 10 V

GS

2. I

= 2.9 A

D

TJ, Junction Temperature [oC]

Figure 8. On-Resistance Variation

vs Temperature

6

5

4

3

2

, Drain Current [A]

D

I

1

3

10

0

25 50 75 100 125 150

TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs Case Temperature

0

10

D=0.5

0.2

-1

10

0.1

※

N o te s :

1. Z

(t) = 0.7 9 ℃/W M a x .

θ

JC

2. D u ty F a c to r, D =t

3. TJM - TC = PDM * Z

1/t2

(t)

θ

JC

0.05

P

0.02

(t), Therm al Response

JC

0.01

θ

Z

-2

10

-5

10

single pulse

-4

10

-3

10

-2

10

DM

t

1

t

2

-1

10

0

10

1

10

t1, S q u a re W a v e P u lse D u ra tio n [s e c]

Figure 11. Transient Thermal Respons e Curve

Rev. A1, Oct 2008

Gate Charge Test Circuit & Waveform

V

GS

DS

GS

10V

Q

g

Q

gs

Q

gd

Charge

Same Type

50KΩ

200nF

12V

200nF

300nF

FQB6N80 / FQI6N80

V

GS

3mA

Same Type

as DUT

DUT

V

Resistive Switching Test Circuit & Waveforms

R

L

10V

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off)

t

f

t

off

10V

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

BV

DSS-VDD

DSS

Time

V

(t)

V

(t)

DS

L

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

AS

2

--------------------

AS

ID (t)

t

p

Peak Diode Recovery dv /d t Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontroll ed by pulse peri od

G

FQB6N80 / FQI6N80

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recoverydv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

Rev. A1, Oct 2008

Mechanical Dimensions

FQB6N80 / FQI6N80

D2 - PAK

Dimensions in Millimeters

Mechanical Dimensions

FQB6N80 / FQI6N80

I2 - PAK

Dimensions in Millimeters

Rev. A1, Oct 2008

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™ *

™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FlashWriter FPS™

®

tm

®

® ®

®

*

®

F-PFS™

* EZSWITCH™ and FlashWriter

®

are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

®

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PDP SPM™ Power-SPM™ PowerTrench PowerXS™

®

tm

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SM

Programmable Active Droop™

®

QFET QS™ Quiet Series™ RapidConfigure™

™

Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™

®

SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™

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The Power Franchise

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TinyBoost™

tm

TinyBuck™

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TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™

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UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FQB6N80 / FQI6N80

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support

.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FQB6N80 / FQI6N80 Rev. A1

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I37

www.fairchildsemi.com