Datasheet FQI30N06L Datasheet (Fairchild Semiconductor)

May 2001

QFET

TM

FQB30N06L / FQI30N06L

FQB30N06L / FQI3 0N06L

60V LOGIC N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

Features

• 32A, 60V, R

DS(on)

= 0.035Ω @VGS = 10 V

• Low gate charge ( typical 15 nC)

• Low Crss ( typical 50 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

!

"

!

"

!

"

!

"

Absolute Maximum Ratings T

C

= 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQB30N06L / FQI30N06L Units

V

DSS

Drain-Source Voltage 60 V

I

D

Drain Current

- Continuous (T

C

= 25°C)

32 A

- Continuous (T

C

= 100°C)

22.6 A

I

DM

Drain Current - Pulsed

(Note 1)

128 A

V

GSS

Gate-Source Voltage ± 20 V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

350 mJ

I

AR

Avalanche Current

(Note 1)

32 A

E

AR

Repetitive Avalanche Energy

(Note 1)

7.9 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

7.0 V/ns

P

D

Power Dissipation (TA = 25°C) *

3.75 W

Power Dissipation (T

C

= 25°C)

79 W

- Derate above 25°C 0.53 W/°C

T

J

, T

STG

Operating and Storage Temperature Range -55 to +175 °C

T

L

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

300 °C

Symbol Parameter Typ Max Units

R

θJC

Thermal Resistance, Junction-to-Case -- 1.90 °C/W

R

θJA

Thermal Resistance, Junction-to-Ambient * -- 40 °C/W

R

θJA

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

* When mounted on the minimum pad size recommended (PCB Mount)

S

D

G

D2-PAK

FQB Series

I2-PAK

FQI Series

G

S

D

G

S

D

FQB30N06L / FQI30N06L

Electrical Characteristics T

C

= 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 400µH, IAS = 32A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 32A, di/dt ≤ 300A/us, VDD ≤ BV

DSS,

Starting TJ = 25°C

4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Symbol Parameter Te st Conditions Min Typ Max Units

Off Characteristics

BV

DSS

Drain-Source Breakdown Voltage

V

GS

= 0 V, ID = 250 µA

60 -- -- V

∆BV

DSS

/ ∆T

J

Breakdown Voltage Temperature Coefficient

I

D

= 250 µA, Referenced to 25°C

-- 0.06 -- V/°C

I

DSS

Zero Gate Voltage Drain Current

V

DS

= 60 V, VGS = 0 V

-- -- 1 µA

V

DS

= 48 V, TC = 150°C

-- -- 10 µA

I

GSSF

Gate-Body Leakage Current, Forward

V

GS

= 20 V, VDS = 0 V

-- -- 100 nA

I

GSSR

Gate-Body Leakage Current, Reverse

V

GS

= -20 V, VDS = 0 V

-- -- -100 nA

On Characteristics

V

GS(th)

Gate Threshold Voltage

V

DS

= VGS, ID = 250 µA

1.0 -- 2.5 V

R

DS(on)

Static Drain-Source On-Resistance

V

GS

= 10 V, ID = 16 A

V

GS

= 5 V , ID =16 A

----0.027

0.035

0.045

Ω

g

FS

Forward Transconductance

V

DS

= 25 V, ID = 16 A

-- 24 -- S

Dynamic Characteristics

C

iss

Input Capacitance

V

DS

= 25 V, VGS = 0 V,

f = 1.0 MHz

-- 800 1040 pF

C

oss

Output Capacitance -- 270 350 pF

C

rss

Reverse Transfer Capacitance -- 50 65 pF

Switching Characteristics

t

d(on)

Turn-On Delay Time

V

DD

= 30 V, ID = 16 A,

R

G

= 25 Ω

-- 15 40 ns

t

r

Turn-On Rise Time -- 210 430 ns

t

d(off)

Turn-Off Delay Time -- 60 130 ns

t

f

Turn-Off Fall Time -- 110 23 0 n s

Q

g

Total Gate Charge

V

DS

= 48 V, ID = 32 A,

V

GS

= 5 V

-- 15 20 nC

Q

gs

Gate-Source Charge -- 3.5 -- nC

Q

gd

Gate-Drain Charge -- 8.5 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain-Source Diode Forward Current -- -- 32 A

I

SM

Maximum Pulsed Drain-Source Diode Forward Current -- -- 128 A

V

SD

Drain-Source Diode Forward Voltage

V

GS

= 0 V, IS = 32 A

-- -- 1.5 V

t

rr

Reverse Recovery Time

V

GS

= 0 V, IS = 32 A,

dI

F

/ dt = 100 A/µs

-- 60 -- ns

Q

rr

Reverse Recovery Charge -- 90 -- nC

(Note 4)

(Note 4, 5)

(Note 4)

FQB30N06L / FQI30N06L

10

-1

10

0

10

1

10

0

10

1

10

2

V

GS

Top : 10.0 V

8.0 V

6.0 V

5.0 V

4.5 V

4.0 V

3.5 V Bottom : 3 .0 V

!

Notes :

1. 250"s Pulse Te st

2. T

C

= 25

#

I

D

, Drain Current [A]

VDS, Drain-Source Vo ltage [V]

0 5 10 15 20 25 30

0

2

4

6

8

10

12

VDS = 30V

VDS = 48V

!

Note : I

D

= 32A

V

GS

, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

10

-1

10

0

10

1

0

500

1000

1500

2000

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

!

Notes :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0.4 0.6 0.8 1.0 1.2 1.4 1.6

10

0

10

1

10

2

175

#

!

Notes :

1. V

GS

= 0V

2. 250"s Pulse Test

25

#

I

DR

, Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

0 20406080100120

0

20

40

60

80

VGS = 10V

VGS = 5V

!

Not e : T

J

= 25

#

R

DS(ON)

[m

$

],

Drain-Source On-Resistance

ID, Drain Current [A]

0246810

10

0

10

1

10

2

175

#

25

#

-55

#

!

Notes :

1. V

DS

= 25V

2. 250"s Pulse Test

I

D

, Drain Current [A]

V

GS

, Gate-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variati on vs .

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Charact eristics

FQB30N06L / FQI30N06L

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

!

Notes :

1. Z

%

JC

(t) = 1.90 #/W M a x .

2. D u t y Fa c t o r , D = t

1/t2

3. TJM - TC = PDM * Z

%

JC

(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Z

%

JC

(t), Thermal R esponse

t1, S q u a re W a v e P uls e D u ra tio n [s e c ]

25 50 75 100 125 150 175

0

10

20

30

40

I

D

, Drain Current [A]

TC, Case Temperature [#]

10

-1

10

0

10

1

10

2

10

0

10

1

10

2

DC

10 ms

1 ms

100 µs

Op eration in This Area is Limited by R

DS(on)

!

Notes :

1. T

C

= 25 oC

2. T

J

= 175 oC

3. Singl e Pulse

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

!

Notes :

1. V

GS

= 10 V

2. ID = 16 A

R

DS(ON)

, (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

!

Note s :

1. VGS = 0 V

2. ID = 250 "A

BV

DSS

, (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs Case Temperature

Figure 7. Breakdo w n Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Transient Thermal Response Cur ve

t

1

P

DM

t

2

FQB30N06L / FQI30N06L

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveform

Charge

V

GS

5V

Q

g

Q

gs

Q

gd

3mA

V

GS

DUT

V

DS

300nF

50K

&

200nF

12V

Same Type

as DUT

Charge

V

GS

5V

Q

g

Q

gs

Q

gd

3mA

V

GS

DUT

V

DS

300nF

50K

&

200nF

12V

Same Type

as DUT

V

GS

V

DS

10%

90%

t

d(on)tr

t

on

t

off

t

d(off)

t

f

V

DD

5V

V

DS

R

L

DUT

R

G

V

GS

V

GS

V

DS

10%

90%

t

d(on)tr

t

on

t

off

t

d(off)

t

f

V

DD

5V

V

DS

R

L

DUT

R

G

V

GS

E

AS

=LI

AS

2

---2

1

-------------------BV

DSS-VDD

BV

DSS

V

DD

V

DS

BV

DSS

t

p

V

DD

I

AS

V

DS

(t)

I

D

(t)

Time

10V

DUT

R

G

L

I

D

t

p

E

AS

=LI

AS

2

---2

1

E

AS

=LI

AS

2

---2

1

---2

1

-------------------BV

DSS-VDD

BV

DSS

V

DD

V

DS

BV

DSS

t

p

V

DD

I

AS

V

DS

(t)

I

D

(t)

Time

10V

DUT

R

G

LL

IDI

D

t

p

FQB30N06L / FQI30N06L

Peak Diode Recovery dv/d t Test Circuit & Waveforms

DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

•ISDcontroll e d by pulse period

V

DD

L

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recoverydv/dt

di/dt

D =

Gate Pulse Width Gate Pulse Period

--------------------------

DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

•ISDcontroll e d by pulse period

V

DD

LL

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recoverydv/dt

di/dt

D =

Gate Pulse Width Gate Pulse Period

--------------------------

D =

Gate Pulse Width Gate Pulse Period

--------------------------

FQB30N06L / FQI30N06L

Package Dimensions

10.00 ±0.20

10.00 ±0.20 (8.00) (4.40)

1.27

±0.10

0.80 ±0.10

(2XR0.45)

9.90

±0.20

4.50 ±0.20

0.10 ±0.15

2.40 ±0.20

2.54 ±0.30

15.30 ±0.30

9.20 ±0.20

4.90 ±0.20

1.40 ±0.20

2.00 ±0.10

(0.75)

(1.75)

(7.20)

0°~3°

1.20 ±0.20

9.20 ±0.20

15.30 ±0.30

4.90 ±0.20

(0.40)

2.54 TYP 2.54 TYP

1.30

+0.10 –0.05

0.50

+0.10 –0.05

D2PAK

FQB30N06L / FQI30N06L

Package Dimensions

(Continued)

9.90 ±0.20

2.40 ±0.20

4.50 ±0.20

1.27 ±0.10 1.47 ±0.10

(45°)

0.80 ±0.10

10.00 ±0.20

2.54 TYP2.54 TYP

13.08 ±0.20

9.20 ±0.20

1.20 ±0.20

10.08 ±0.20 MAX13.40

MAX 3.00

(0.40)

(1.46)

(0.94)

1.30

+0.10 –0.05

0.50

+0.10 –0.05

I2PAK

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E

2

CMOS™ EnSigna™ FACT™ FACT Quiet Series™

FAST

®

FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™

OPTOPLANAR™ PACMAN

™

POP™ PowerTrench

®

QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER

®

SMART START™ Stealth™

SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET

®

VCX™