Datasheet fqd6n60c Datasheet

FQD6N60C

600V N-Channel MOSFET

FQD6N60C 600V N-Channel MOSFET

®

QFET

Features

• 4 A, 600 V, R

• Low gate charge ( typical 16 nC )

• Low Crss ( typical 7 pF)

• Fast switching

• 100 % avalanche tested

• Improved dv/dt capability

DS(on)

= 2.0 Ω @ V

GS

= 10 V

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

D

!!!!

D

!!!!

G

S

D-PAK

FQD Series

G

!!!!

●●●●

◀◀◀◀

▲▲▲▲

●●●●

!!!!

S

Absolute Maximum Ratings

Symbol Parameter FQD6N60C Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

P

D

T

, T

J

STG

T

L

Drain-Source Voltage 600 V

Drain Current - Continuous (TC = 25°C) 4 A

- Continuous (T

= 100°C) 2.4 A

C

Drain Current - Pulsed (Note 1) 16 A Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy (Note 2) 300 mJ

Avalanche Current (Note 1) 4.0 A

Repetitive Avalanche Energy (Note 1) 8.0 mJ

Power Dissipation (TC = 25°C) 80 W

- Derate above 25°C 0.78 W/°C

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

300 °C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

FQD6N60C Rev. A

Thermal Resistance, Junction-to-Case -- 1.56 °C/W Thermal Resistance, Junction-to-Ambient * -- 50 °C/W Thermal Resistance, Junction-to-Ambient -- 110 °C/W

1

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FQD6N60C FQD6N60CTM DPAK 380mm 16mm 2500

FQD6N60C FQD6N60CTF DPAK 380mm 16mm 2000

FQD6N60C 600V N-Channel MOSFET

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆BV ∆T

I

DSS

I

GSSF

I

GSSR

DSS

J

Drain-Source Breakdown Voltage VGS = 0 V, I

/

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current VDS = 600 V, V

I

= 250 µA, Referenced to 25°C -- 0.6 -- V/°C

D

= 480 V, T

V

DS

= 250 µA 600 -- -- V

D

= 0 V -- -- 1 µA

GS

= 125°C -- -- 10 µA

C

Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VDS = VGS, I

Static Drain-Source

VGS = 10 V, I

On-Resistance

Forward Transconductance VDS = 40 V, ID = 2.0 A

= 250 µA2.0--4.0V

D

= 2.0 A -- 1.7 2.0 Ω

D

(Note 4)

-- 4.8 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance VDS = 25 V, VGS = 0 V,

Output Capacitance -- 65 85 pF

Reverse Transfer Capacitance -- 7 10 pF

f = 1.0 MHz

-- 620 810 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

Turn-On Delay Time VDD = 300 V, ID = 5.5 A,

Turn-On Rise Time -- 45 100 ns

Turn-Off Delay Time -- 45 100 ns

Turn-Off Fall Time -- 45 100 ns

Total Gate Charge VDS = 480 V, ID = 5.5 A,

Gate-Source Charge -- 3.5 -- nC

Gate-Drain Charge -- 6.5 -- nC

Drain-Source Diode Characteristics and M axi mu m Rat ing s

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 34.3 mH, IAS = 4.0 A, VDD = 50V, R

≤ 4.0 A, di/dt ≤ 200A/µs, VDD ≤ BV

3. I

SD

4. Pulse Test : Pul se width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 4.0 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 16 A

Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.0 A -- -- 1.4 V

Reverse Recovery Time VGS = 0 V, IS = 5.5 A,

Reverse Recovery Charge

= 25 Ω, Starting T

G

Starting TJ = 25°C

DSS,

= 25°C

J

R

= 25 Ω

G

V

= 10 V

GS

dI

/ dt = 100 A/µs

F

(Note 4, 5)

(Note 4)

-- 15 40 ns

-- 16 20 nC

-- 310 -- ns

-- 2.1 -- µC

FQD6N60C Rev. A

2

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Typical Perfor mance Chara cteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FQD6N60C 600V N-Channel MOSFET

-55oC

Notes :

※

1. VDS = 40V

2. 250µ s Pulse Test

1

10

0

10

-1

, Drain Current [A]

10

D

I

-2

10

V Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

5.0 V Bottom : 4.5 V

-1

GS

0

10

VDS, Drain-Source Voltage [V]

1

10

150oC

0

Notes :

※

1. 250µ s Pulse Test = 25

℃

2. T

C

1

10

, Drain Current [A]

D

I

-1

10

25oC

246810

VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

6

5

4

[Ω ],

3

DS(ON)

R

2

Drain-Source On-Resistance

1

0

02468101214

VGS = 10V

VGS = 20V

※

Note : T

= 25

J

ID, Dr ain Cur ren t [A]

1

10

℃

0

10

, Reverse Drain Current [A]

DR

I

10

150

℃

25

℃

-1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VSD, Source-Drain voltage [V]

Notes :

※

1. VGS = 0V

2. 250µ s Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

1000

800

600

400

Capacitances [pF]

200

FQD6N60C Rev. A

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

C

iss

C

oss

Note ;

※

1. VGS = 0 V

10

2. f = 1 MHz

1

C

rss

0

-1

10

0

10

VDS, Drain- Source Volt age [V]

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

V

0

0481216

QG, Total Gate Charge [nC]

3

VDS = 120V

VDS = 300V

VDS = 480V

※

Note : I

= 5.5A

D

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FQD6N60C 600V N-Channel MOSFET

Typical Perfor mance Chara cteristics

(Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2

1.1

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 - 50 0 50 100 150 200

Notes :

※

1. VGS = 0 V

2. I

= 250 µ A

D

TJ, Juncti on Temperature [oC]

3.0

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

Drain-Source On-Resistance

0.5

0.0

-100 - 50 0 50 100 150 200

TJ, Junction Temperature [oC]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

2

10

1

10

Operation i n This Area is Limit ed by R

DS(on)

100 µs

10 µs

4.5

3.0

1 ms

10 ms

Notes :

※

1. TC = 25 oC

2. T

= 150 oC

J

3. Single Pul se

DC

2

10

0

10

, Drain Current [A]

D

I

-1

10

0

10

1

10

VDS, Drain-Source Voltage [V]

1.5

, Drain Current [A]

D

I

3

10

0.0 25 50 75 100 125 150

TC, Case Temperature [ ]

℃

Notes :

※

1. VGS = 10 V

2. I

= 2.0 A

D

Figure 11. Transient Thermal Response Curve

0

10

D=0.5

Notes :

※

1. Z

(t) = 1.56 /W M ax.

θ JC

2. Du ty F acto r, D =t1/t

3. TJM - TC = PDM * Z

-1

10

FQD6N60C Rev. A

0.2

0.1

-1

0.05

10

0.02

(t), Thermal Response

0.01

θ JC

Z

-2

10

-5

10

single pulse

-4

10

-3

10

-2

10

t1, Square W ave Pulse Duration [sec]

4

℃

2

(t)

θ JC

0

10

1

10

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12V

200nF

3mA

50KΩ

V

Gate Charge Test Circuit & Waveform

V

GS

300nF

Same Type

as DUT

DUT

V

DS

GS

10V

Resistive Switching Test Circuit & Waveforms

FQD6N60C 600V N-Channel MOSFET

Q

g

Q

gs

Q

gd

Charge

10V

R

L

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off)

t

f

t

off

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

L

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

AS

2

AS

I

(t)

D

t

p

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

FQD6N60C Rev. A

5

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Peak Diode Recovery dv /dt Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontrolled by pulse period

G

FQD6N60C 600V N-Channel MOSFET

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

FQD6N60C Rev. A

6

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Mechanical Dimensions

FQD6N60C 600V N-Channel MOSFET

D-PAK

FQD6N60C Rev. A

Dimensions in Millimeters

7

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TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

A

CEx™ ActiveArray™ Bottomless™ CoolFET™

CROSSVOLT™

DOME™ EcoSPARK™

2

E

CMOS™ EnSigna™ FACT™ FACT Quiet Series™

Across the board. Around the world.™ The Power Franchise

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ImpliedDisconnect™

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OPTOPLANAR™ PACMAN™

POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET

®

QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™

µSerDes™

SILENT SWITCHER SMART START™

SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FQD6N60C 600V N-Channel MOSFET

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

8

FQD6N60C Rev. A

Rev. I15

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