Datasheet fqd12p10tm_f085 Datasheet

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FQD12P10TM_F085 P-Channel MOSFET

February 2010

FQD12P10TM_F085

100V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Absolute Maximum Ratings

Symbol Parameter

DSS

GSS

dv/dt Peak Diode Recovery dv/dt P

, T

STG

Drain-Source Voltage -100 V Drain Current

Drain Current - Pulsed Gate-Source Voltage ± 30 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes, 1/8! from case for 5 seconds

D-PAK

TC = 25°C unless otherwise noted

- Continuous (TC = 25°C)

- Continuous (TC = 100°C)

- Derate above 25°C 0.4 W/°C

Features

• -9.4A, -100V, R

• Low gate charge ( typical 21 nC)

• Low Crss ( typical 65 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Qualified to AEC Q101

•

RoHS Compliant

(Note 1)

(Note 2) (Note 1) (Note 1) (Note 3)

= 0.29Ω @VGS = -10 V

DS(on)

Ratings Units

-9.4 A

-6.0 A

-37.6 A

370 mJ

-9.4 A

5.0 mJ

-6.0 V/ns

2.5 W 50 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

θJC

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

Thermal Resistance, Junction-to-Case -- 2.5 °C/W Thermal Resistance, Junction-to-Ambient * -- 50 °C/W Thermal Resistance, Junction-to-Ambient -- 110 °C/W

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FQD12P10TM_F085 P-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

DSS

∆BV

DSS

/ ∆T I

DSS

GSSF

GSSR

Drain-Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

VGS = 0 V, ID = -250 µA

= -250 µA, Referenced to 25°C

VDS = -100 V, VGS = 0 V VDS = -80 V, TC = 125°C V

= -30 V, VDS = 0 V

VGS = 30 V, VDS = 0 V

-100 -- -- V

-- -0.1 -- V/°C

-- -- -1 µA

-- -- -10 µA

-- -- -100 nA

-- -- 100 nA

On Characteristics

V R

GS(th)

DS(on)

Gate Threshold Voltage Static Drain-Source

On-Resistance Forward Transconductance

VDS = VGS, ID = -250 µA

= -10 V, ID = -4.7 A

VDS = -40 V, ID = -4.7 A

(Note 4)

-2.0 -- -4.0 V

-- 0.24 0.29 Ω

-- 6.3 -- S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance -- 220 290 pF Reverse Transfer Capacitance -- 65 85 pF

= -25 V, VGS = 0 V,

f = 1.0 MHz

-- 620 800 pF

Switching Characteristics

d(on)

d(off)

Q Q Q

g gs gd

Turn-On Delay Time Turn-On Rise Time -- 160 330 ns

VDD = -50 V, ID = -11.5 A, RG = 25 Ω

-- 15 40 ns

Turn-Off Delay Time -- 35 80 ns Turn-Off Fall Time -- 60 130 ns Total Gate Charge Gate-Source Charge -- 4.6 -- nC Gate-Drain Charge -- 11.5 -- nC

VDS = -80 V, ID = -11.5 A, V

= -10 V

(Note 4, 5)

-- 21 27 nC

(Note 4, 5)

Drain-Source Diode Characteristics and Maximum Ratings

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 6.3mH, IAS = -9.4A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD " -11.5A, di/dt " 300A/µs, VDD " BV

4. Pulse Test : Pulse width " 300µs, Duty cycle " 2%

5. Essentially independent of operating temperature

FQD12P10TM_F085 Rev. A

Maximum Continuous Drain-Source Diode Forward Current -- -- -9.4 A Maximum Pulsed Drain-Source Diode Forward Current -- -- -37.6 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- 0.47 -- µC

Starting TJ = 25°C

DSS,

VGS = 0 V, IS = -9.4 A VGS = 0 V, IS = -11.5 A,

dIF / dt = 100 A/µs

-- -- -4.0 V

-- 110 -- ns

(Note 4)

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Typical Characteristics

Top : -15.0 V

-10.0 V

-8.0 V

-7.0 V

-6.5 V

-5.5 V

-5.0 V Botto m : -4.5 V

-1

, Drain Current [A]

-I

-2

-1

-VDS, Drain-Source Voltage [V]

1. 250#s Pulse Test

2. T

Notes :

FQD12P10TM_F085 P-Channel MOSFET

150

, Drain Current [A]

-I

= 25

-1

246810

-55

Notes :

1. V

= -40V

2. 250#s Pulse Test

-VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

0.8

VGS = - 10V

0.6

Ω

[

0.4

DS(on)

0.2

Drain-Source On-Resistance

0.0 0 10203040

VGS = - 20V

Note : TJ = 25

-ID , Drain Curren t [A]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

1600

1400

1200

1000

800

600

Capacitance [pF]

400

200

-1

oss

iss

rss

-VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

= C

rss

Notes :

1. V

= 0 V

2. f = 1 MH z

, Reverse Drain Current [A]

-I

150

-1

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Notes :

1. VGS = 0V

2. 250#s Pulse Tes t

-VSD , Sou r c e-Drain Voltage [V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

, Gate-Source Voltage [V]

-V

0 4 8 12 16 20 24

QG, Tota l Gate Charge [n C]

VDS = -20V

VDS = -50V

VDS = -80V

Note : ID = -11.5 A

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FQD12P10TM_F085 Rev. A

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Typical Characteristics (Continued)

FQD12P10TM_F085 P-Channel MOSFET

1.2

1.1

1.0

, (Norm a liz e d )

DSS

-BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

Notes :

1. V

2. ID = -250 #A

TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage Variation

vs. Temperature

, Drain C u rren t [A ]

-I

-1

Operation in This Area is Limited by R

DS(on)

1 ms

10 ms

Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

-VDS, Drain-Source Voltage [V]

100 µs

3.0

2.5

2.0

= 0 V

1.5

, (No rmaliz e d )

1.0

DS(ON)

0.5

Drain-Source On-Resistance

0.0

-100 -50 0 50 100 150 200

Notes :

1. VGS = -10 V

2. ID = -4.7 A

TJ, Junction Temperature [oC]

Figure 8. On-Resistance Variation

vs. Temperature

, Drain Current [A]

-I

25 50 75 100 125 150

TC, Case Temperature [!]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

FQD12P10TM_F085 Rev. A

vs. Case Temperature

D=0.5

0.2

0.1

Notes :

1. Z

(t) = 2 .5 !/W M a x .

2. D u ty F a c t o r, D = t

3. TJM - TC = PDM * Z

1/t2

(t)

0.05

-1

0.02

(t), Th erm al R e s p o ns e

0.01

-5

single pulse

-4

-3

-2

-1

t1, S q u a re W av e P uls e D ur a tio n [s e c ]

Figure 11. Transient Thermal Response Curve

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12V

200nF

-3mA

50K

FQD12P10TM_F085 P-Channel MOSFET

Gate Charge Test Circuit & Waveform

-10V

Charge

Same Type

300nF

Same Type

as DUT

DUT

-10V

Resistive Switching Test Circuit & Waveforms

DUT

10%

d(on)tr

90%

d(off)

off

Unclamped Inductive Switching Test Circuit & Waveforms

DSS

IDI

----

=LI

ID (t)

DSS

--------------------

-------------------BV

DSS-VDD

Time

(t)

-10V

FQD12P10TM_F085 Rev. A

DUT

DSS

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

Driver

Compliment of DUT

(N-Channel)

FQD12P10TM_F085 P-Channel MOSFET

( Driver )

( DUT )

D =

IFM, Body Diode Forward Current

Forward Voltage Drop

• dv/dt controlled by R

•ISDcontroll ed by pulse peri od

Gate Pulse Width

--------------------------

-------------------------Gate Pulse Period

Gate Pulse Period

Body Diode Reverse Current

Body Diode

Body Diode Recoverydv/dt

10V

di/dt

FQD12P10TM_F085 Rev. A

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Package Dimensions

6.60

5.34 (4.34)(0.50) (0.50)

±0.20

0.60

±0.20

0.80

±0.20 ±0.30

D-PAK

±0.20

0.70

±0.20

6.10

2.70

±0.30

9.50

±0.10

0.91

2.30

0.50

FQD12P10TM_F085 P-Channel MOSFET

±0.10

MIN0.55

MAX0.96

2.30TYP

[2.30±0.20]

±0.10

0.76

2.30TYP

[2.30±0.20]

±0.30

9.50

±0.20

6.10

±0.20

2.70

±0.10

0.89

±0.20

6.60 (5.34)

(5.04) (1.50)

(2XR0.25)

(0.70)

0.76

0.50

1.02

2.30

(0.90)

(0.10) (3.05)

±0.10

±0.20 ±0.20

(1.00)

FQD12P10TM_F085 Rev. A

Dimensions in Millimeters

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® ®

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FQD12P10TM_F085 P-Channel MOSFET

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As used herein:

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expected to result in a significant injury of the user.

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parts. Customers who inadvertently purchase counterfeit parts e xperien ce man y prob lems such as loss of brand reput ation, substanda rd performa nce, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairch ild strongly encourage s custome rs to purchase Fairch ild parts either dire ctly from Fa irchild or from Autho rized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full ra nge of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for part s bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage o ur customers to do their part in stopping this practice by buyin g direct or from aut horized distributors.

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Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary dat a will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time withou t notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I47

FQD12P10TM_F085 Rev. A

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