Datasheet FQB5N90TM Specification

Is Now Part of

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FQB5N90

N-Channel QFET® MOSFET

900 V, 5.4 A, 2.3 Ω

FQB5N90 — N-Channel QFET

November 2013

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

D

G

S

Absolute Maximum Ratings T

Symbol Parameter

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

, T

T

J

STG

T

L

Drain-Source Voltage 900 V

Drain Current 5.4 A

Drain Current - Pulsed Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *

Power Dissipation (T

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering, 1/8" from case for 5 seconds

- Continuous (T

- Derate above 25°C 1.27 W/°C

= 25°C)

C

D2-PAK

= 25°C unless otherwise noted.

C

= 25°C)

C

= 100°C)

C

Features

•

5.4 A, 900 V, R ID = 2.7 A

Low Gate Charge (Typ. 31 nC)

•

Low Crss (Typ. 13 pF)

•

• 100% Avalanche Tested

•

RoHS Compliant

G

(Note 1)

(Note 2)

(Note 1)

(Note 3)

= 2.3 Ω (Max.) @ VGS = 10 V,

DS(on)

FQB5N90TM Unit

3.42 A

21.6 A

15.8 mJ

3.13 W

D

S

660 mJ

5.4 A

4.0 V/ns

158 W

300 °C

®

MOSFET

Thermal Characteristics

Symbol Parameter

R

FQB5N90 Rev. C1

Thermal Resistance, Junction to Case, Max.

JC

Thermal Resistance, J

JA

Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.

unction to Ambi

ent (Minimum Pad

1

of 2-oz Copper), Max.

FQB5N90TM

0.79

62.5

40

www.fairchildsemi.com

Unit

o

C/W

Package Marking and Ordering Information

Part Number Top Mark

FQB5N90TM

FQB5N90

Package Reel Size Tape Width Quantity

D2-PAK

Packing Method

Tape and Reel

330 mm

24 mm

FQB5N90 — N-Channel QFET

800 units

Electrical Characteristics T

= 25°C unless otherwise noted.

C

Symbol Parameter Test Conditions

Off Characteristics

BV

DSS

∆BV / ∆T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, ID = 250 µA

GS

= 250 µA, Referenced to 25°C

I

D

V

= 900 V, VGS = 0 V

DS

= 720 V, TC = 125°C

V

DS

V

= 30 V, VDS = 0 V

GS

V

= -30 V, VDS = 0 V

GS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 2.7 A

V

GS

V

= 50 V, ID = 2.7 A

DS

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance -- 110 145 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

Reverse Transfer Capacitance -- 13 17 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time -- 65 140 ns

Turn-Off Delay Time -- 65 140 ns

V

= 450 V, ID = 5.4 A,

DD

R

= 25 Ω

G

Turn-Off Fall Time -- 50 110 ns

Total Gate Charge

Gate-Source Charge -- 7.2 -- nC

V

= 720 V, ID = 5.4 A,

DS

V

= 10 V

GS

Gate-Drain Charge -- 15 -- nC

( Note 4)

ote 4)

( N

Min. Typ. Max. Unit

900 -- -- V

-- 1.0 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

3.0 -- 5.0 V

-- 1.8 2.3 Ω

-- 5.6 -- S

-- 1200 1550 pF

-- 28 65 ns

-- 31 40 nC

®

MOSFET

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1.

Repetitive rating : pulse-width limited by maximum junction temperature.

2.

L = 43 mH, IAS = 5.4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.

3.

ISD ≤ 5.4 A, di/dt ≤ 200 A/µs , VDD ≤ BV

Essentially independent of operating temperature.

4.

FQB5N90

Maximum Continuous Drain-Source Diode Forward Current -- -- 5.4 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 21.6 A

V

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge -- 5.26 -- µC

starting TJ = 25°C.

DSS,

Rev

onductor Corporation

1

. C

= 0 V, IS = 5.4 A

GS

= 0 V, IS = 5.4 A,

V

GS

dI

/ dt = 100 A/µs

F

2

-- -- 1.4 V

-- 610 -- ns

www.fairchildsemi.com

Typical Characteristics

V

GS

Top : 15.0 V

1

10

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

0

10

-1

10

, Drai n Current [A]

D

I

-2

10

-1 0

10

5

4

],

Ω

[

3

DS(ON)

R

2

Drain-Sour ce On-Resistance

1

030 9121518

10

VDS, Drain- Source Voltage [ V]

VGS = 10V

VGS = 20V

6

ID, Drain Cur rent [A]

※

Notes :

1. 250μs Pulse Test

℃

2. T

= 25

C

1

10

※

Note : T

= 25

J

FQB5N90 — N-Channel QFET

1

10

150oC

0

10

, Drai n Current [A]

D

I

-1

10

2 64 10

1

10

0

10

, Reverse Drain Current [ A]

DR

℃

I

-1

10

0.2 0.4 0. 6 0. 8 1. 0 1. 2

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics

25oC

4

-55oC

VGS, Gate-Source Voltage [V]

℃

25

℃

150

VSD, Source-Drain voltage [V]

※

Notes :

1. V

= 50V

DS

2. 250μs Pulse Test

8

※

Notes :

= 0V

1. V

GS

2. 250μs Pulse Test

®

MOSFET

Figure 3. On-Resistance Variation vs .

Drain Current and Gate Voltage

2200

2000

1800

1600

1400

1200

1000

800

Capacitance [ pF]

600

400

200

0

-1 0

10

C

iss

C

oss

C

rss

10

VDS, Drain- Source Vol tage [V]

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

FQB5N90 Rev. C1

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

※

Notes :

1. V

GS

2. f = 1 MHz

1

10

= 0 V

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Temperature

12

10

8

6

4

, Gate- Source Vol tage [ V]

2

GS

V

0

0 5 10 15 20 25 30 35

3

VDS = 180V

VDS = 450V

VDS = 720V

QG, Total Gate Charge [nC]

※

Note : I

= 5.4 A

D

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Typical Characteristics

FQB5N90 — N-Channel QFET

(Continued)

1.2

1.1

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 - 50 0 50 10 0 150 200

※

1. V

2. I

Notes :

TJ, Junction Temperature [oC]

Figure 7. Breakdo w n Voltage Variation

vs. Temperature

2

10

1

10

0

10

, Drai n Current [A]

D

I

-1

10

-2

10

0

10

Operation in This Area is Limited by R

DS(on)

10 ms

DC

※

Notes :

1. T

= 25 oC

C

2. T

= 150 oC

J

3. Single Pulse

1

10

2

10

VDS, Drain- Source Vol tage [V]

1 ms

= 0 V

GS

= 250 μA

D

100 µs

10 µs

3.0

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

0.5

Drain- Source On-Resi stance

0.0

-100 -50 0 50 100 150 200

※

Notes :

1. V

2. I

GS

= 2.7 A

D

= 10 V

®

MOSFET

TJ, Junct ion Temperat ure [oC]

Figure 8. On-Resistance Variation

vs. Temperature

6

5

4

3

2

, Drai n Current [A]

D

I

1

3

10

0

25 50 75 100 125 150

TC, Case Temperat ure [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

0

10

C/W]

o

(t), Thermal Response [

JC

Z

FQB5N90 Rev. C1

D=0.5

0.2

-1

10

0.1

0.05

0.02

0.01

-2

10

-5

10

vs. Case Temperature

※

N ote s :

1. Z

(t) = 0.7 9 ℃/W Max .

θ

JC

2. D uty F actor , D =t 3 =. TJM - TC PDM* Z

P

DM

t

1

singlee p lse

-4

10

-3

10

-2

10

-1

10

t

2

10

t1, S q u a re W ave P uls e D u ra tion [s e c ]

Figure 11. Transient Thermal Respons e Cur ve

4

1/t2

(t)

θ

JC

0

1

10

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12V

200nF

IG = const.

3mA

V

GS

DS

GS

10V

Q

gs

50KΩ

V

GS

300nF

Same Type

as DUT

DUT

V

Figure 12. Gate Charge Test Circuit & Waveform

Q

g

Q

gd

Charge

FQB5N90 — N-Channel QFET

®

MOSFET

V

10V

V

10V

GS

R

L

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off )

t

f

t

off

Figure 13. Resistive Switching Test Circuit & Waveforms

BV

DSS

L

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

AS

2

AS

I

(t)

D

t

p

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

5

www.fairchildsemi.com

FQB5N90 — N-Channel QFET

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontrolled by pulse period

®

MOSFET

V

DD

G

Gate Pulse Width

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

IFM, Body Diode Forward Current

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

I

RM

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

10V

V

DD

FQB5N90

Rev. C1

onductor Corporation

6

www.fairchildsemi.com

Mechanical Dimensions

FQB5N90 — N-Channel QFET

®

MOSFET

Figure 16. TO263 (D2PAK), Molded, 2-Lead, Surface Mount

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