Datasheet fqb5n50cf Datasheet

FQB5N50CF

500V N-Channel MOSFET

FQB5N50CF 500V N-Channel MOSFET

May 2006

TM

FRFET

Features

• 5A, 500V, R

• Low gate charge ( typical 18nC)

• Low Crss ( typical 15pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 1.55 Ω @VGS = 10 V

DS(on)

GS

D

D2-PAK

FQB Series

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.

D

G

S

Absolute Maximum Ratings

Symbol Parameter FQB5N50CF Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

, T

T

J

STG

T

L

Drain-Source Voltage 500 V Drain Current - Continuous (TC = 25°C) 5 A

- Continuous (T Drain Current - Pulsed Gate-Source Voltage ± 30 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TC = 25°C) 96 W

- Derate above 25°C 0.76 W/°C Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

= 100°C) 3.2 A

C

(Note 1)

(Note 2) (Note 1) (Note 1) (Note 3)

20 A

300 mJ

5A

9.6 mJ

4.5 V/ns

300 °C

Thermal Characteristics

Symbol Parameter FQB5N50CF Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

FQB5N50CF Rev. A

Thermal Resistance, Junction-to-Case 1.3 °C/W Thermal Resistance, Junction-to-Ambient* 40 °C/W Thermal Resistance, Junction-to-Ambient 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FQB5N50CF FQB5N50CFTM D2-PAK 330mm 24mm 800 FQB5N50CF FQB5N50CFTF D2-PAK 330mm 24mm 800

FQB5N50CF 500V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV ∆T

J

I

DSS

I

GSSF

I

GSSR

On Characteristics V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics C

iss

C

oss

C

rss

Switching Characteristics t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 21.5mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 5A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temp er at ur e

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V

/

DSS

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 10 µA

= 400 V, TC = 125°C -- -- 100 µA

V

DS

Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V Static Drain-Source On-Resistance VGS = 10 V, ID = 2.5A -- 1.3 1.55 Ω Forward Transconductance VDS = 40 V, ID = 2.5 A (Note 4) -- 5.2 -- S

Input Capacitance VDS = 25 V, VGS = 0 V, Output Capacitance -- 80 105 pF Reverse Transfer Capacitance -- 15 20 pF

f = 1.0 MHz

Turn-On Delay Time VDD = 250 V, ID = 5A,

R

= 25 Ω

Turn-On Rise Time -- 46 100 ns

G

-- 480 625 pF

-- 12 35 ns

Turn-Off Delay Time -- 50 110 ns Turn-Off Fall Time -- 48 105 ns Total Gate Charge VDS = 400 V, ID = 5A,

V

= 10 V

Gate-Source Charge -- 2.2 -- nC Gate-Drain Charge -- 9.7 -- nC

GS

(Note 4, 5)

-- 18 24 nC

Maximum Continuous Drain-Source Diode Forward Current -- -- 5 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 20 A Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5 A -- -- 1.4 V Reverse Recovery Time VGS = 0 V, IS = 5 A,

dI

/ dt = 100 A/µs (Note 4)

Reverse Recovery Charge -- 110 -- nC

Starting TJ = 25°C

DSS,

F

-- 65 -- ns

FQB5N50CF Rev. A

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FQB5N50CF 500V N-Channel MOSFET

10

, Drain Current [A]

D

I

10

V Top : 15.0 V

10.0 V

1

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V Bottom : 5.0 V

0

-1

10

GS

0

10

VDS, Drain-Source Voltage [V]

1

10

150°C

25°C

0

10

D

-1

10

246810

Notes :

1. 250

2. T

1

10

µs Pulse Test

= 25°C

C

, Drain Current [A] I

VGS, Gate-Source Voltage [V]

-55°C

Notes :

1. V

= 40V

DS

µs Pulse Test

2. 250

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

4.5

4.0

3.5

3.0

[Ω],

2.5

DS(ON)

R

2.0

1.5

Drain-Source On-Resistance

1.0

0.5 0 5 10 15

VGS = 10V

ID, Drain Current [A]

VGS = 20V

Note : TJ = 25°C

1

10

0

10

150?

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD, Source-Drain volta g e [V]

25?

Notes :

= 0V

1. V

GS

µs Pulse T est

2. 250

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

1200

1000

800

600

400

Capacitance [pF]

200

0

-1

10

FQB5N50CF Rev. A

C

iss

C

oss

C

rss

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

= Cds + C

gd

= C

gd

Notes ;

1. V

= 0 V

GS

2. f = 1 MH z

1

10

12

10

8

VDS = 400V

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 2 0

QG, Total Gate Ch a rg e [nC]

3 www.fairchildsemi.com

VDS = 100V

VDS = 250V

Note : ID = 5A

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

FQB5N50CF 500V N-Channel MOSFET

1.2

3.0

2.5

1.1

2.0

1.0

, (Normalized)

BV

DSS

0.9

Note s :

1. V

2. I

Drain-Source Breakdown Volt ag e

0.8

-100 -50 0 50 100 150 200

TJ, Junction Temperature [°C]

= 0 V

GS

= 250µA

D

1.5

, (Normalized)

1.0

DS(ON)

R

0.5

Drain-Source On-Resistance

0.0

-100 -50 0 50 100 150 200

TJ, Junction Temperature [°C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

10

, Drain Current [A]

D

I

10

DS(on)

µs

10

µs

100

6

5

4

2

Operation in This Area is Limited by R

1

1ms

10ms

100ms

0

-1 0

10

1

10

DC

* Notes :

1. T

= 25 oC

C

= 150 oC

2. T

J

3. Single Pulse

2

10

VDS, Drain-SourceVoltage[ V ]

3

2

, Drain Current [A]

D

I

1

0

3

25 50 75 100 125 150 175

TC, Case Temperature [oC]

Notes :

1. V

2. I

GS

= 2.5 A

D

= 10 V

Figure 11. Transient Thermal Response Curve

0

10

D=0.5

0.2

0.1

-1

10

0.05

0.02

0.01

-2

(t), Thermal Response

10

?JC

Z

-5

10

FQB5N50CF Rev. A

10

* Notes :

1. Z

θJC

-2

10

2. Duty Factor, D=t

3. TJM - TC = PDM * Z

-1

10

single pulse

-4

-3

10

t1, Square Wave Pulse Duration [sec]

4 www.fairchildsemi.com

P

DM

t

1

t

2

(t) = 1.3 0C/W Max.

1/t2

θJC

0

10

(t)

1

10

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FQB5N50CF 500V N-Channel MOSFET

FQB5N50CF Rev. A

Unclamped Inductive Switching Test Circuit & Waveforms

5 www.fairchildsemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms

FQB5N50CF 500V N-Channel MOSFET

FQB5N50CF Rev. A

6 www.fairchildsemi.com

Mechanical Dimensions

FQB5N50CF 500V N-Channel MOSFET

D2-PAK

FQB5N50CF Rev. A

Dimensions in Millimeters

7 www.fairchildsemi.com

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

®

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHER S. TH ESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FQB5N50CF 500V N-Channel MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

FQB5N50CF Rev. A

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I19

8 www.fairchildsemi.com