Datasheet FQB55N10TM Specification

Is Now Part of

To learn more about ON Semiconductor, please visit our website at

www.onsemi.com

ON Semi conductor an d the ON Semico nductor logo a re trademar ks of Semicon ductor Comp onents Indus tries, L LC dba ON Semico nductor or it s subsidiari es in the United S tates and /or other coun tries. ON Se miconducto r owns the righ ts to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserve s the right
to make changes without f urther noti ce to any produc ts herein. ON S emicon ductor makes no warran ty, representat ion or guar antee regar ding the suitability of its pro ducts for any partic ular purpose, n or does ON Semic onductor as sume any liabilit y
arisin g out of the applica tion or us e of any product o r circui t, and specific ally dis claims any and all lia bilit y, includin g witho ut limit ation sp ecial, c onsequential or incidental da mages . Buye r is responsib le for it s products and a pplica tions us ing ON
Semic onductor pr oducts, inc luding complia nce with all law s, regulati ons and safet y requirem ents or stan dards, rega rdless of an y support or ap plications in formation p rovided by ON S emiconduc tor. “Typical ” parameter s which may be pr ovided in ON
Semic onductor data s heet s and/or s pecificatio ns can and do vary in diff erent a pplica tions an d actual perf ormance may var y over time. All o perat ing parameter s, including “Typical s” must b e validated for e ach cus tomer ap plicat ion by customer’s
techni cal exper ts. ON Semic onductor do es not conve y any license un der its pate nt rights no r the rights o f others. ON S emiconduc tor produc ts are not des igned, inte nded, or autho rized for use a s a critical c omponent in lif e support s ystems or an y FDA
Clas s 3 medical devi ces or medica l devices wit h a same or similar c lassificat ion in a foreign j urisdictio n or any device s intended for im plantation in t he human body. Sho uld Buyer pur chase or use ON S emiconduct or products f or any such unint ended
or unaut horized appli cation, Buy er shall indemn ify and hold O N Semiconduc tor and its of ficers, e mployees , subsidiari es, affilia tes, and dis tributor s harmless ag ainst all claim s, costs , damages, an d expenses , and reason able attorn ey fees aris ing out
of, dire ctly or indire ctly, any claim o f personal inj ury or death as sociated w ith such unint ended or unauth orized use, e ven if such claim a lleges that ON S emiconduc tor was neglig ent regardin g the design or ma nufacture o f the part. ON S emiconduct or
is an Equa l Oppor tunity/Affirm ative Action E mployer. This li terature is s ubject to all applicable c opyright la ws and is no t for resale in any manner.

FQB55N10

N-Channel QFET® MOSFET

100 V, 55 A, 26 mΩ

FQB55N10 — N-Channel QFET

November 2013

Description

This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.

D

G

S

Absolute Maximum Ratings T

Symbol Parameter

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

, T

T

J

STG

T

L

Drain-Source Voltage 100 V

Drain Current 55 A

Drain Current - Pulsed
Gate-Source Voltage ± 25 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *

Power Dissipation (T

Operating and Storage Temperature Range -55 to +175 °C

Maximum lead temperature for soldering,
1/8" from case for 5 seconds

- Continuous (T

- Continuous (T

C

- Derate above 25°C 1.03 W/°C

= 25°C)

D2-PAK

= 25°C unless otherwise noted.

C

= 25°C)

C

= 100°C)

C

Features

•

55 A, 100 V, R
ID = 27.5 A

Low Gate Charge (Typ. 75 nC)

•

Low Crss (Typ. 130 pF)

•

• 100% Avalanche Tested

175°C Maximum Junction Temperature Rating

•

(Note 1)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

= 26 mΩ (Max.) @ VGS = 10 V,

DS(on)

D

G

S

FQB55N10TM Unit

38.9 A

220 A

1100 mJ

55 A

15.5 mJ

6.0 V/ns

3.75 W

155 W

300 °C

®

MOSFET

Thermal Characteristics

Symbol Parameter

R

R

©2000 Fairchild Semiconductor Corporation
FQB55N10 Rev. C1

Thermal Resistance, Junction to Case, Max.

JC

Thermal Resistance, J

JA

Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.

unction to Ambi

ent (Minimum Pad

1

of 2-oz Copper), Max.

FQB55N10TM

0.97

62.5

40

www.fairchildsemi.com

Unit

o

C/W

Package Marking and Ordering Information

Part Number Top Mark

FQB55N10TM

FQB55N10

Package Reel Size Tape Width Quantity

D2-PAK

Packing Method

Tape and Reel

330 mm

24 mm

FQB55N10 — N-Channel QFET

800 units

Electrical Characteristics T

= 25°C unless otherwise noted.

C

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics

BV

DSS

∆BV
/ ∆T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, ID = 250 µA

GS

= 250 µA, Referenced to 25°C

I

D

V

= 100 V, VGS = 0 V

DS

= 80 V, TC = 150°C

V

DS

V

= 25 V, VDS = 0 V

GS

V

= -25 V, VDS = 0 V

GS

100 -- -- V

-- 0.1 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage

Static Drain-Source
On-Resistance

Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 27.5 A

V

GS

V

= 40 V, ID = 27.5 A

DS

2.0 -- 4.0 V

-- 0.021 0.026 Ω

-- 38 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance -- 640 830 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 2100 2730 pF

Reverse Transfer Capacitance -- 130 170 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time -- 250 510 ns

Turn-Off Delay Time -- 110 230 ns

Turn-Off Fall Time -- 140 290 ns

Total Gate Charge

Gate-Source Charge -- 13 -- nC

Gate-Drain Charge -- 36 -- nC

V

= 50 V, ID = 55 A,

DD

R

= 25 Ω

G

V

= 80 V, ID = 55 A,

DS

V

= 10 V

GS

( N ote 4)

Note 4)

(

-- 25 60 ns

-- 75 98 nC

®

MOSFET

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1.

Repetitive rating : pulse-width limited by maximum junction temperature.

2.

L = 0.55 mH, IAS = 55 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C.

3.

ISD ≤ 55 A, di/dt ≤ 300 A/µs , VDD ≤ BV

Essentially independent of operating temperature.

4.

©2000 Fairchild Semiconductor Corporation
FQB55N10 Rev. C1

Maximum Continuous Drain-Source Diode Forward Current -- -- 55 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 220 A

V

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge -- 380 -- nC

starting TJ = 25°C.

DSS,

= 0 V, IS = 55 A

GS

= 0 V, IS = 55 A,

V

GS

dI

/ dt = 100 A/µs

F

2

-- -- 1.5 V

-- 100 -- ns

www.fairchildsemi.com

Typical Characteristics

V

GS

Top : 15.0 V

2

10.0 V

10

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

1

10

, Drai n Current [A]

D

I

0

10

-1 0

10

10

VDS, Drain-Source Voltage [V]

※

Notes :

1. 250μs Pulse Test

℃

2. T

= 25

C

1

10

2

10

1

10

℃

175

℃

25

0

10

, Drai n Current [A]

D

I

-1

10

246 10

℃

-55

4

※

Notes :

1. V

= 40V

DS

2. 250μs Pulse Test

8

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics

FQB55N10 — N-Channel QFET

®

MOSFET

0.12

0.09

],

Ω

[

0.06

DS(on)

R

0.03

Drain-Source On-Resistance

0.00
0 60 120 180 240 300

VGS = 10V

VGS = 20V

ID , Drain Current [A]

Figure 3. On-Resistance Variation vs .

Drain Current and Gate Voltage

6000

5000

4000

3000

2000

Capacitance [pF]

1000

0

-1 0

10

10

VDS, Drain- Source Volt age [V]

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

C

= C

rss

C

iss

C

oss

C

rss

10

※

gd

1

Note : T

= 25

J

gd

※

Notes :

1. V

= 0 V

GS

2. f = 1 MHz

2

10

1

10

0

10

℃

175

, Reverse Drain Current [ A]

DR

℃

I

-1

10

0.2 0. 4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

℃

25

※

Notes :

1. V

= 0V

GS

2. 250μs Pulse Test

VSD, Source-Drain voltage [V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

12

10

8

6

4

, Gate- Source Vol tage [ V]

2

GS

V

0

0 01 02 3040 05 06 07 80

VDS = 50V

VDS = 80V

QG, Total Gate Charge [nC]

※

Note : I

D

= 55A

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

©2000 Fairchild Semiconductor Corporation
FQB55N10 Rev. C

1

3

www.fairchildsemi.com

Typical Characteristics

FQB55N10 — N-Channel QFET

(Continued)

1.2

1.1

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 - 50 0 50 10 0 150 200

※

Notes :

1. V

2. I

TJ, Junction Temperature [oC]

Figure 7. Breakdo w n Voltage Variation

vs. Temperature

3

10

2

10

1

10

, Drain Current [A]

D

I

0

10

-1

10

0 1

10

Operation in This Area
is Limited by R

DS(on)

1 ms

10 ms

DC

※

Notes :

1. T

= 25 oC

C

2. T

= 175 oC

J

3. Single Pulse

10

VDS, Drain- Source Voltage [V]

100 µs

= 0 V

GS

= 250 μA

D

10 µs

10

3.0

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

0.5

Drain- Source On-Resi stance

0.0

-100 -50 0 50 100 150 200

※

1. V

2. I

Notes :

= 10 V

GS

= 27.5 A

D

®

MOSFET

TJ, Junct ion Temperat ure [oC]

Figure 8. On-Resistance Variation

vs. Temperature

60

50

40

30

20

, Drain Current [A]

D

I

10

2

0

25 50 75 100 125 150 175

TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

0

10

C/W]

o

(t), Thermal Response [

JC

Z

©2000 Fairchild Semiconductor Corporation
FQB55N10 Rev. C

1

D=0.5

0.2

-1

0.1

10

0.05

0.02

0.01

-2

10

-5

10

vs. Case Temperature

※

N ote s :

1. Z

(t) = 0.97 ℃/W M ax .

θ

JC

2. D uty F acto r, D =t

3. TJM - TC = PDM* Z

P

DM

t

single pulse

-4

10

t

1

-3

10

-2

10

, S q u a re W av e P u lse D u ra tio n [s ec ]

10

1

t

2

-1

10

Figure 11. Transient Thermal Respons e Cur ve

4

1/t2

(t)

θ

JC

0

1

10

www.fairchildsemi.com

12V

12V

200nF

200nF

50KΩ

50KΩ

V

V

GS

GS

300nF

300nF

Same Type

Same Type

as DUT

as DUT

FQB55N10 — N-Channel QFET

V

V

GS

GS

Q

Q

g

10V

10V

V

V

DS

DS

Q

Q

gs

gs

g

Q

Q

gd

gd

V

10V

10V

GS

IG = const.

3mA

3mA

DUT

DUT

Figure 12. Gate Charge Test Circuit & Waveform

R

R

L

DUT

DUT

L

V

V

DD

DD

V

V

DS

DS

V

V

GS

GS

R

R

G

G

V

V

DS

DS

90%

90%

10%

10%

V

V

GS

GS

t

t

d(on)tr

d(on)tr

t

t

on

on

Figure 13. Resistive Switching Test Circuit & Waveforms

Charge

Charge

®

MOSFET

t

t

d(off )

d(off )

t

t

f

f

t

t

off

off

V

V

DS

DS

I

IDI

D

D

R

R

G

G

V

V

10V

10V

GS

GS

t

t

p

p

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

©2000 Fairchild Semiconductor Corporation

FQB55N10

Rev. C1

DUT

DUT

BV

BV

DSS

L

LL

BV

BV

DSS

DSS

I

I

AS

AS

V

V

DD

DD

V

V

DD

DD

5

1

1

1

1

----

----

----

----

E

E

=LI

E

=LI

=LI

AS

AS

AS

2

2

2

2

2

2

2

AS

AS

AS

I

I

(t)

(t)

D

D

t

t

p

p

DSS

--------------------

-------------------­BV

BV

DSS-VDD

DSS-VDD

Time

Time

www.fairchildsemi.com

V

(t)

V

(t)

DS

DS

FQB55N10 — N-Channel QFET

+

DUT

DUT

I

I

SD

SD

Driver

Driver

R

R

G

G

V

V

GS

GS

+

V

V

DS

DS

_

_

L

LL

Same Type

Same Type

as DUT

as DUT

• dv/dt controlled by R

• dv/dt controlled by R

•ISDcontrolled by pulse period

•ISDcontrolled by pulse period

®

MOSFET

V

V

DD

DD

G

G

Gate Pulse Width

Gate Pulse Width

V

V

GS

GS

( Driver )

( Driver )

I

I

SD

SD

( DUT )

( DUT )

V

V

DS

DS

( DUT )

( DUT )

IFM, Body Diode Forward Current

IFM, Body Diode Forward Current

Gate Pulse Width

--------------------------

--------------------------

--------------------------

D =

D =

D =

Gate Pulse Period

Gate Pulse Period

Gate Pulse Period

Body Diode Reverse Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body Diode Recovery dv/dt

V

V

SD

SD

Body Diode

Body Diode

Forward Voltage Drop

Forward Voltage Drop

di/dt

di/dt

I

I

RM

RM

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

10V

10V

V

V

DD

DD

©2000 Fairchild Semic

FQB55N10

Rev. C1

onductor Corporation

6

www.fairchildsemi.com

Mechanical Dimensions

FQB55N10 — N-Channel QFET

®

MOSFET

Figure 16. TO263 (D2PAK), Molded, 2-Lead, Surface Mount

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif­ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002

©2000 Fairchild Semiconductor Corporation
FQB55N10 Rev. C1

7

www.fairchildsemi.com

TRADEMARKS

®

™

tm

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.

AccuPower™

®

*

AX-CAP
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™

Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FPS™

®

®

®

®
®

F-PFS™

®

FRFET
Global Power Resource
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™

®

MicroPak2™
MillerDrive™
MotionMax™

®

mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR

®

SM

®

®

PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™

®

®

RapidConfigure™

Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™

®

SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS

®

®

SyncFET™

Sync-Lock™

®*

TinyBoost
TinyBuck
TinyCalc™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT
SerDes™

UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™

®

®

®

®

XS™

®

*

FQB55N10 — N-Channel QFET

®

MOSFET

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS
Definition of Terms

.

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

©2000 Fairchild Semiconductor Corporation
FQB55N10 Rev. C1

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

Rev. I66

8

www.fairchildsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

. ON Semiconductor reserves the right to make changes without further notice to any products herein.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [e-mail]

© Semiconductor Components Industries, LLC

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: [phone]

Japan Customer Focus Center

Phone: 81−3−5817−1050

www.onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local
Sales Representative

www.onsemi.com

1