Datasheet FQI4N90, FQB4N90 Datasheet (Fairchild Semiconductor)

FQB4N90 / FQI4N90

900V N-Channel MOSFET

FQB4N90 / FQI4N90

October 2001

TM

QFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well

Features

• 4.2A, 900V, R

• Low gate charge ( typically 24 nC)

• Low Crss ( typically 9.5 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 3.3 Ω @ VGS = 10 V

DS(on)

suited for high efficiency switch mode power supplies.

!

D

!

"

" "

"

!

S

D

GS

2

-PAK

D

FQB Series

GSD

Absolute Maximum Ratings T

I2-PAK

FQI Series

= 25°C unless otherwise noted

C

!

G

Symbol Parameter FQB4N90 / FQI4N90 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

Drain-Source Voltage 900 V Drain Current

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

4.2 A

2.65 A

16.8 A Gate-Source Voltage ± 30 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) * Power Dissipation (T

= 25°C)

C

(Note 2) (Note 1) (Note 1) (Note 3)

570 mJ

4.2 A 14 mJ

4.0 V

3.13 W 140 W

- Derate above 25°C 1.12 W/°C

, T

T

J

stg

T

L

Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

Thermal Resistance, Junction-to-Case -- 0.89 °C/W Thermal Resistance, Junction-to-Ambient * -- 40 °C/W Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. B, October 2001

FQB4N90 / FQI4N90

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV ∆BV / ∆T I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 900 V, VGS = 0 V

DS

V

= 720 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

900 -- -- V

-- 0.9 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage Static Drain-Source

On-Resistance Forward Transconductance

V

= VGS, ID = 250 µA

DS

V

= 10 V, ID = 2.1 A

GS

= 50 V, ID = 2.1 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 2.7 3.3 Ω

-- 3.5 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance Output Capacitance -- 90 120 pF Reverse Transfer Capacitance -- 9.5 12.5 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 860 1100 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

g gs gd

Turn-On Delay Time Turn-On Rise Time -- 70 150 ns Turn-Off Delay Time -- 45 10 0 ns Turn-Off Fall Time -- 40 90 ns Total Gate Charge Gate-Source Charge -- 5.8 -- nC Gate-Drain Charge -- 11.5 -- nC

= 450 V, ID = 4.2 A,

V

DD

= 25 Ω

R

G

V

= 720 V, ID = 4.2 A,

DS

V

GS

= 10 V

(Note 4, 5)

-- 25 60 ns

-- 24 30 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 61mH, IAS = 4.2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 4.2A, di/dt ≤ 200A/µs, VDD≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 4.2 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 16.8 A

= 0 V, IS = 4.2 A

Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- 3.3 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 4.2 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 440 -- ns

(Note 4)

Rev. B, October 2001

Typical Characteristics

FQB4N90 / FQI4N90

V

GS

1

Top : 1 5 .0 V

10

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V Bottom : 5.5 V

0

10

, Dra in Curre n t [A ]

D

I

-1

10

-1

10

0

10

※

Note s :

1. 250μs Pulse Tes t

℃

2. T

= 25

C

1

10

VDS, Drain-Source Voltage [V]

10

8

6

[Ω],

DS(on)

R

4

Drain-Source On-Resistance

2

0

036912

VGS = 20V

VGS = 10V

※

Note : T

℃

= 25

J

ID , Drai n Curren t [A ]

1

10

℃

150

0

10

, Dra in C u rre n t [A]

D

I

-1

10

246810

℃

25

℃

-55

※

Note s :

= 50V

1. V

DS

2. 250μs Pulse Test

VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

℃

, Reverse Drain Current [A]

150

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

℃

25

※

Note s :

1. V

= 0V

GS

2. 250μs Pulse Test

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Temperature

VDS = 180V

VDS = 450V

VDS = 720V

※

Note : I

1500

1200

900

600

Capacitance [pF]

300

0

-1

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

10

gd

1

※

Note s :

1. V

= 0 V

GS

2. f = 1 MHz

C

iss

C

oss

C

rss

0

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20 25 30

QG, Tota l Gate Charge [n C]

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

= 4.2 A

D

Typical Characteristics (Continued)

FQB4N90 / FQI4N90

1.2

1.1

1.0

, (N o r ma lize d )

DSS

BV

0.9

Drain-Source Breakdown V oltage

0.8

-100 -50 0 50 100 150 200

※

1. V

2. I

No tes :

D

GS

= 250

= 0 V

TJ, Junction Tem perature [oC]

Figure 7. Breakdown Voltage Variation

vs. Temperature

Operation in This Area is Limited by R

※

Notes :

1. T

= 25 oC

C

= 150 oC

2. T

J

3. Single Pulse

1

10

DS(on)

100 µs

1 ms

10 ms

DC

2

10

2

10

1

10

0

10

, Drain Current [A]

D

-1

I

10

-2

10

0

10

VDS, Drain-Source Voltage [V]

3.0

2.5

2.0

μ

A

1.5

, (Normalized)

1.0

DS(ON)

R

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

※

1. V

2. I

Note s :

D

= 10 V

GS

= 2.1 A

TJ, Junction Temperature [oC]

Figure 8. On-Resistance Variation

vs. Temperature

5

4

3

2

, Drain Current [A]

D

I

1

3

10

0

25 50 75 100 125 150

TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

0

10

D=0.5

0.2

-1

0.1

10

0.05

0.02

(t), Therm al Response

JC

0.01

θ

Z

-2

10

-5

10

single pulse

-4

10

-3

10

-2

10

※

N o te s :

(t) = 0.8 9 ℃/W M a x.

1. Z

θ

JC

2. D u ty F a c to r , D = t

3. TJM - TC = PDM * Z

P

DM

t

1

t

2

-1

10

1/t2

(t)

θ

JC

0

1

10

t1, S q u a re W av e P u lse D u ra tion [s e c]

Figure 11. Transient Thermal Response Cur ve

12V

200nF

3mA

50KΩ

Gate Charge Test Circuit & Waveform

V

GS

Same Type

as DUT

300nF

V

GS

DUT

10V

V

DS

Resistive Switching Test Circuit & Waveforms

FQB4N90 / FQI4N90

Q

g

Q

gs

Q

gd

Charge

10V

R

L

DUT

L

( 0.5 rated V

V

DD

V

DS

R

G

DS

V

DS

90%

)

10%

V

in

t

d(on)tr

t

on

t

d(off)

t

f

t

off

Unclamped Inductive Switching Test Circuit & Waveforms

BV

L

V

LL

V

DS

V

DD

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

E

AS

1

----

=LL I

2

AS

I

D

BV

DSS

--------------------

-------------------BV

BV

DSS

(t)

2

-- V

DD

V

(t)

V

(t)

DS

t

p

Time

Peak Diode Recovery dv / dt Test Circuit & Waveforms

DUT

I

ISI

S

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•IScontrolled by pulse period

G

FQB4N90 / FQI4N90

V

DD

V

GS

( Driver )

I

S

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recoverydv/dt

V

f

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

Package Dimensions

FQB4N90 / FQI4N90

D2-PAK

9.90

±0.20

(0.40)

1.40 ±0.20

1.27

±0.10

0.80 ±0.10

2.54 TYP 2.54 TYP

1.20 ±0.20

9.20 ±0.20

4.90 ±0.20

15.30 ±0.30

2.00 ±0.10

(0.75)

4.50 ±0.20

10.00 ±0.20 (8.00) (4.40)

+0.10

1.30

–0.05

0.10 ±0.15

2.40 ±0.20

0°~3°

+0.10

0.50

–0.05

2.54 ±0.30

10.00 ±0.20

15.30 ±0.30

(1.75)

(2XR0.45)

(7.20)

9.20 ±0.20

4.90 ±0.20

0.80 ±0.10

Dimensions in Millimeters

Package Dimensions

FQB4N90 / FQI4N90

(Continued)

I2-PAK

9.90 ±0.20

(0.40)

(1.46)

(0.94)

1.27 ±0.10 1.47 ±0.10

13.08 ±0.20

(45°)

0.80 ±0.10

2.54 TYP2.54 TYP

1.20 ±0.20

9.20 ±0.20

MAX 3.00

10.08 ±0.20 MAX13.40

0.50

4.50 ±0.20

+0.10 –0.05

+0.10

1.30

–0.05

2.40 ±0.20

10.00 ±0.20

Dimensions in Millimeters

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™

2

CMOS™

E EnSigna™ FACT™ FACT Quiet Series™

STAR*POWER is used under license

®

FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™

OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench

®

QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER

SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™

®

UltraFET

VCX™

®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H4

Datasheet FQI4N90, FQB4N90 Datasheet (Fairchild Semiconductor)

Specifications and Main Features

Frequently Asked Questions

User Manual