Datasheet FQI27P06, FQB27P06 Datasheet (Fairchild Semiconductor)

FQB27P06 / FQI27P06

60V P-Channel MOSFET

FQB27P06 / FQI27P06

May 2001

TM

QFET

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive,

Features

• -27A, -60V, R

• Low gate charge ( typical 33 nC)

• Low Crss ( typical 120 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

= 0.07Ω @VGS = -10 V

DS(on)

DC/DC converters, and high efficiency switching fo r power management in portable and battery operated products.

D

G

S

D2-PAK

FQB Series

G

D

Absolute Maximum Ratings T

S

= 25°C unless otherwise noted

C

I2-PAK

FQI Series

G

!!!!

S

!!!!

●●●●

▶▶▶▶

▲▲▲▲

●●●●

!!!!

D

Symbol Parameter FQB27P06 / FQI27P06 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

Drain-Source Voltage -60 V Drain Current

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

-27 A

-19.1 A

-108 A Gate-Source Voltage ± 25 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) * Power Dissipation (T

= 25°C)

C

(Note 2) (Note 1) (Note 1) (Note 3)

560 mJ

-27 A 12 mJ

-7.0 V/ns

3.75 W 120 W

- Derate above 25°C 0.8 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +175 °C Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

Thermal Resistance, Junction-to-Case -- 1.25 °C/W Thermal Resistance, Junction-to-Ambient * -- 40 °C/W Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

FQB27P06 / FQI27P06

Elerical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Te st Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = -250 µA

V

GS

I

= -250 µA, Referenced to 25°C

D

V

= -60 V, VGS = 0 V

DS

V

= -48 V, TC = 150°C

DS

V

= -25 V, VDS = 0 V

GS

= 25 V, VDS = 0 V

V

GS

-60 -- -- V

-- -0.06 -- V/°C

-- -- -1 µA

-- -- -10 µA

-- -- -100 nA

-- -- 100 nA

On Characteristics

V R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage Static Drain-Source

On-Resistance Forward Transconductance

V

= VGS, ID = -250 µA

DS

= -10 V, ID = -13.5 A

V

GS

= -30 V, ID = -13.5 A

V

DS

(Note 4)

-2.0 -- -4.0 V

-- 0.055 0.07 Ω

-- 12.4 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance Output Capacitance -- 510 660 pF Reverse Transfer Capacitance -- 120 155 pF

= -25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1100 1400 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

g gs gd

Turn-On Delay Time Turn-On Rise Time -- 185 380 ns Turn-Off Delay Time -- 30 70 n s Turn-Off Fall Time -- 90 190 ns Total Gate Charge Gate-Source Charge -- 6.8 -- nC Gate-Drain Charge -- 18 -- nC

= -30 V, ID = -13.5 A,

V

DD

= 25 Ω

R

G

V

= -48 V, ID = -27 A,

DS

V

GS

= -10 V

(Note 4, 5)

-- 18 45 ns

-- 33 43 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 0.9mH, IAS = -27A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -27A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- -27 A Maximum Pulsed Drain-Source Diode Forward Current -- -- -108 A

= 0 V, IS = -27 A

Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- 0.41 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = -27 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- -4.0 V

-- 105 -- ns

(Note 4)

Typical Characteristics

FQB27P06 / FQI27P06

10

, Drain Current [A]

D

-I

10

2

V Top : - 1 5.0 V

- 10.0 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

1

Bottom : - 4.5 V

0

-1

10

GS

※

1. 250μs Pulse Test

2. T

0

10

-VDS, Drain-Source Voltage [V]

0.24

0.20

0.16

],

Ω

[

0.12

DS(on)

R

0.08

Drain-Source On-Resistance

0.04

0.00 0 10 20 30 40 50 60 70 80 90 100 110 120 130

VGS = - 10V

VGS = - 20V

-ID , Drain Curren t [A ]

Notes :

※

Note : T

2

10

1

10

℃

175

℃

25

0

10

, Drain Current [A]

D

-I

℃

= 25

C

1

10

-1

10

246810

℃

-55

※

Notes :

1. V

= -30V

DS

2. 250μs Pulse Test

-VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

※

Notes :

= 0V

1. V

GS

2. 250μs Pulse Test

= 25

J

2

10

1

10

0

10

℃

175

℃

, Reve rs e D ra in Current [A ]

℃

DR

-I

-1

10

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

25

-VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

3000

2500

2000

1500

1000

Capacitance [pF]

500

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

oss

C

iss

C

rss

0

10

1

※

Notes :

= 0 V

1. V

GS

2. f = 1 MHz

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

-V

0

0 5 10 15 20 25 30 35

VDS, Drain-Source Voltage [V]

VDS = -30V

VDS = -48V

QG, Tota l Gate Charge [n C]

※

Note : I

= -27 A

D

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

Typical Characteristics (Continued)

FQB27P06 / FQI27P06

1.2

1.1

1.0

, (Norm a liz e d )

DSS

※

-BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

1. V

2. I

Notes :

TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage Variation

vs. Temperature

Operation in This Area is Limited by R

※

Notes :

1. T

= 25 oC

C

2. T

= 175 oC

J

3. Single Pulse

DS(on)

1 ms

10 ms

DC

1

10

2

10

1

10

, Drain Current [A]

D

0

-I

10

-1

10

0

10

-VDS, Drain-Source Voltage [V]

= 0 V

GS

= -250

D

100 µs

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

0.5

μ

A

Drain-Source On-Resistance

0.0

-100 -50 0 50 100 150 200

※

Notes :

= -10 V

1. V

GS

2. I

= -13.5 A

D

TJ, Junction Temperature [oC]

Figure 8. On-Resistance Variation

vs. Temperature

30

25

20

2

10

15

10

, Drain Current [A]

D

-I

5

0

25 50 75 100 125 150 175

TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

0

10

D=0.5

※

N o te s :

1. Z

(t) = 1.25 ℃/W M a x .

θ

0.2

0.1

-1

10

0.05

0.02

(t), Therm al Response

JC

0.01

θ

Z

-2

10

-5

10

single pulse

-4

10

t

-3

10

, S q u a re W av e P u ls e D u ra tio n [s ec ]

1

-2

10

JC

2. D u ty F a c to r, D = t

3. TJM - TC = PDM * Z

P

DM

t

1

t

-1

10

1/t2

(t)

θ

JC

2

0

1

10

Figure 11. Transient Thermal Response Cur ve

12V

200nF

-3mA

50K

FQB27P06 / FQI27P06

Gate Charge Test Circuit & Waveform

V

GS

DS

GS

-10V

Q

g

Q

gs

Q

gd

Charge

Same Type

Ω

300nF

V

GS

Same Type

as DUT

DUT

V

Resistive Switching Test Circuit & Waveforms

-10V

R

L

DUT

L

V

DD

V

GS

10%

V

DS

V

DS

V

GS

R

G

t

d(on)tr

90%

t

on

t

off

t

d(off)

t

f

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

L

LL

V

DS

I

IDI

D

V

DD

BV

DD

I

AS

DSS

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

AS

2

AS

t

p

I

(t)

D

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

Peak Diode Recovery dv /d t Test Circuit & Waveforms

+

V

DS

DUT

I

SD

Driver

R

G

V

GS

_

L

LL

Compliment of DUT

(N-Channel)

• dv/dt controlled by R

•ISDcontroll ed by pulse peri od

G

FQB27P06 / FQI27P06

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

Body Diode Reverse Current

I

RM

IFM, Body Diode Forward Current

V

SD

Body Diode

Forward Voltage Drop

Body Diode Recoverydv/dt

di/dt

10V

V

DD

Package Dimensions

FQB27P06 / FQI27P06

D2PAK

9.90

±0.20

(0.40)

1.40 ±0.20

1.27

±0.10

0.80 ±0.10

2.54 TYP 2.54 TYP

1.20 ±0.20

9.20 ±0.20

4.90 ±0.20

15.30 ±0.30

2.00 ±0.10

(0.75)

4.50 ±0.20

10.00 ±0.20 (8.00) (4.40)

+0.10

1.30

–0.05

0.10 ±0.15

2.40 ±0.20

0°~3°

+0.10

0.50

–0.05

2.54 ±0.30

10.00 ±0.20 (1.75)

(2XR0.45)

(7.20)

9.20 ±0.20

15.30 ±0.30

4.90 ±0.20

0.80 ±0.10

FQB27P06 / FQI27P06

Package Dimensions

(0.40)

(1.46)

(Continued)

9.90 ±0.20

(45°)

I2PAK

1.20 ±0.20

9.20 ±0.20

4.50 ±0.20

1.30

+0.10 –0.05

(0.94)

1.27 ±0.10 1.47 ±0.10

13.08 ±0.20

10.00 ±0.20

0.80 ±0.10

2.54 TYP2.54 TYP

MAX 3.00

10.08 ±0.20 MAX13.40

0.50

+0.10 –0.05

2.40 ±0.20

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™

2

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OPTOPLANAR™ PACMAN

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2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Datasheet FQI27P06, FQB27P06 Datasheet (Fairchild Semiconductor)

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Frequently Asked Questions

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